JP2002509339A
(ja)
*
|
1997-12-15 |
2002-03-26 |
イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー |
被覆ワイヤーのイオン衝撃された黒鉛電子エミッタ
|
US6537122B1
(en)
*
|
1997-12-15 |
2003-03-25 |
E. I. Du Pont De Nemours And Company |
Ion bombarded graphite electron emitters
|
US6645402B1
(en)
*
|
1998-06-18 |
2003-11-11 |
Matsushita Electric Industrial Co., Ltd. |
Electron emitting device, electron emitting source, image display, and method for producing them
|
RU2149477C1
(ru)
*
|
1998-08-12 |
2000-05-20 |
Акционерное общество закрытого типа "Карбид" |
Полевой эмиттер электронов
|
US6630772B1
(en)
*
|
1998-09-21 |
2003-10-07 |
Agere Systems Inc. |
Device comprising carbon nanotube field emitter structure and process for forming device
|
US6181055B1
(en)
*
|
1998-10-12 |
2001-01-30 |
Extreme Devices, Inc. |
Multilayer carbon-based field emission electron device for high current density applications
|
JP4069532B2
(ja)
*
|
1999-01-11 |
2008-04-02 |
松下電器産業株式会社 |
カーボンインキ、電子放出素子、電子放出素子の製造方法、および画像表示装置
|
JP3494583B2
(ja)
|
1999-01-13 |
2004-02-09 |
松下電器産業株式会社 |
電子放出素子の製造方法
|
US6283812B1
(en)
*
|
1999-01-25 |
2001-09-04 |
Agere Systems Guardian Corp. |
Process for fabricating article comprising aligned truncated carbon nanotubes
|
US6250984B1
(en)
*
|
1999-01-25 |
2001-06-26 |
Agere Systems Guardian Corp. |
Article comprising enhanced nanotube emitter structure and process for fabricating article
|
DE19910156C2
(de)
*
|
1999-02-26 |
2002-07-18 |
Hahn Meitner Inst Berlin Gmbh |
Elektronenemitter und Verfahren zu dessen Herstellung
|
JP2000268706A
(ja)
|
1999-03-18 |
2000-09-29 |
Matsushita Electric Ind Co Ltd |
電子放出素子及びそれを用いた画像描画装置
|
KR100346540B1
(ko)
*
|
1999-03-22 |
2002-07-26 |
삼성에스디아이 주식회사 |
전계 방출 표시소자와 그의 제조방법
|
KR20000074609A
(ko)
*
|
1999-05-24 |
2000-12-15 |
김순택 |
카본 나노 튜브를 이용한 전계 방출 어레이 및 그 제조방법
|
EP1061554A1
(de)
|
1999-06-15 |
2000-12-20 |
Iljin Nanotech Co., Ltd. |
Weisslichtquelle mit Kohlenstoffnanoröhren und Verfahren zur Herstellung
|
KR20010039636A
(ko)
*
|
1999-06-15 |
2001-05-15 |
이철진 |
탄소나노튜브를 이용한 백색 광원 및 그 제조 방법
|
KR20010039637A
(ko)
*
|
1999-06-18 |
2001-05-15 |
이철진 |
탄소나노튜브를 이용한 백색광원 제조 방법
|
JP2001052652A
(ja)
*
|
1999-06-18 |
2001-02-23 |
Cheol Jin Lee |
白色光源及びその製造方法
|
KR100396436B1
(ko)
*
|
1999-06-18 |
2003-09-02 |
일진나노텍 주식회사 |
탄소나노튜브를 이용한 백색 광원 제조 방법
|
US6504292B1
(en)
*
|
1999-07-15 |
2003-01-07 |
Agere Systems Inc. |
Field emitting device comprising metallized nanostructures and method for making the same
|
KR100312694B1
(ko)
*
|
1999-07-16 |
2001-11-03 |
김순택 |
카본 나노튜브 필름을 전자 방출원으로 사용하는 전계 방출 표시 장치
|
US6312303B1
(en)
*
|
1999-07-19 |
2001-11-06 |
Si Diamond Technology, Inc. |
Alignment of carbon nanotubes
|
EP1073090A3
(de)
*
|
1999-07-27 |
2003-04-16 |
Iljin Nanotech Co., Ltd. |
Feldemissionsanzeigevorrichtung mit Kohlenstoffnanoröhren und Verfahren
|
JP2001043790A
(ja)
*
|
1999-07-29 |
2001-02-16 |
Sony Corp |
冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法
|
SE515377E
(sv)
|
1999-07-30 |
2005-01-11 |
Nanolight Internat Ltd |
Ljuskälla innefattande en fältemissionskatod
|
TW430857B
(en)
*
|
1999-08-10 |
2001-04-21 |
Delta Optoelectronics Inc |
Luminescent device
|
KR100314094B1
(ko)
|
1999-08-12 |
2001-11-15 |
김순택 |
전기 영동법을 이용한 카본나노튜브 필드 에미터의 제조 방법
|
US6448709B1
(en)
*
|
1999-09-15 |
2002-09-10 |
Industrial Technology Research Institute |
Field emission display panel having diode structure and method for fabricating
|
US6290564B1
(en)
|
1999-09-30 |
2001-09-18 |
Motorola, Inc. |
Method for fabricating an electron-emissive film
|
CN1287404C
(zh)
*
|
1999-10-12 |
2006-11-29 |
松下电器产业株式会社 |
电子发射器件和利用它的电子源、图象显示装置、荧光灯及其制造方法
|
EP1102298A1
(de)
*
|
1999-11-05 |
2001-05-23 |
Iljin Nanotech Co., Ltd. |
Feldemissionsanzeige mit vertikal ausgerichteten Kohlenstoffnonoröhren sowie deren Herstellung
|
US6515639B1
(en)
*
|
1999-12-07 |
2003-02-04 |
Sony Corporation |
Cathode ray tube with addressable nanotubes
|
KR100612271B1
(ko)
*
|
2000-01-21 |
2006-08-11 |
삼성에스디아이 주식회사 |
전계 방출 표시 소자 및 그의 제조 방법
|
US6469433B1
(en)
*
|
2000-01-28 |
2002-10-22 |
Extreme Devices Incorporated |
Package structure for mounting a field emitting device in an electron gun
|
JP3595233B2
(ja)
*
|
2000-02-16 |
2004-12-02 |
株式会社ノリタケカンパニーリミテド |
電子放出源及びその製造方法
|
US20050148271A1
(en)
*
|
2000-02-25 |
2005-07-07 |
Si Diamond Technology, Inc. |
Nanotubes cold cathode
|
DE60042679D1
(de)
|
2000-03-16 |
2009-09-17 |
Hitachi Ltd |
Vorrichtung zum Erzeugen eines Stromes von Ladungsträgern
|
KR100343205B1
(ko)
*
|
2000-04-26 |
2002-07-10 |
김순택 |
카본나노튜브를 이용한 삼극 전계 방출 어레이 및 그 제작방법
|
US6586889B1
(en)
|
2000-06-21 |
2003-07-01 |
Si Diamond Technology, Inc. |
MEMS field emission device
|
US7449081B2
(en)
|
2000-06-21 |
2008-11-11 |
E. I. Du Pont De Nemours And Company |
Process for improving the emission of electron field emitters
|
GB0015928D0
(en)
*
|
2000-06-30 |
2000-08-23 |
Printable Field Emitters Limit |
Field emitters
|
US6709566B2
(en)
|
2000-07-25 |
2004-03-23 |
The Regents Of The University Of California |
Method for shaping a nanotube and a nanotube shaped thereby
|
US6819034B1
(en)
|
2000-08-21 |
2004-11-16 |
Si Diamond Technology, Inc. |
Carbon flake cold cathode
|
JP2002063864A
(ja)
|
2000-08-21 |
2002-02-28 |
Ise Electronics Corp |
蛍光表示管
|
US6914380B2
(en)
*
|
2000-08-23 |
2005-07-05 |
Noritake Co., Ltd, |
Vacuum fluorescent display having x-ray shielding cap
|
JP4312937B2
(ja)
|
2000-08-29 |
2009-08-12 |
株式会社ノリタケカンパニーリミテド |
蛍光表示管
|
US6664728B2
(en)
|
2000-09-22 |
2003-12-16 |
Nano-Proprietary, Inc. |
Carbon nanotubes with nitrogen content
|
US6553096B1
(en)
*
|
2000-10-06 |
2003-04-22 |
The University Of North Carolina Chapel Hill |
X-ray generating mechanism using electron field emission cathode
|
US6528799B1
(en)
*
|
2000-10-20 |
2003-03-04 |
Lucent Technologies, Inc. |
Device and method for suppressing space charge induced aberrations in charged-particle projection lithography systems
|
US6885022B2
(en)
*
|
2000-12-08 |
2005-04-26 |
Si Diamond Technology, Inc. |
Low work function material
|
US20050200261A1
(en)
*
|
2000-12-08 |
2005-09-15 |
Nano-Proprietary, Inc. |
Low work function cathode
|
US6436221B1
(en)
*
|
2001-02-07 |
2002-08-20 |
Industrial Technology Research Institute |
Method of improving field emission efficiency for fabricating carbon nanotube field emitters
|
WO2002068323A1
(fr)
*
|
2001-02-26 |
2002-09-06 |
Nanolight International Ltd. |
Procede pour former un revetement, constitue de nanotubes de carbone, sur la surface d'un substrat
|
US6649431B2
(en)
*
|
2001-02-27 |
2003-11-18 |
Ut. Battelle, Llc |
Carbon tips with expanded bases grown with simultaneous application of carbon source and etchant gases
|
JP3673481B2
(ja)
*
|
2001-03-08 |
2005-07-20 |
喜萬 中山 |
電界電子エミッター及びディスプレー装置
|
US6765190B2
(en)
|
2001-03-14 |
2004-07-20 |
The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration |
Multi-element electron-transfer optical detector system
|
US6750438B2
(en)
|
2001-03-14 |
2004-06-15 |
The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration |
Single-element electron-transfer optical detector system
|
US6949877B2
(en)
*
|
2001-03-27 |
2005-09-27 |
General Electric Company |
Electron emitter including carbon nanotubes and its application in gas discharge devices
|
US6965199B2
(en)
*
|
2001-03-27 |
2005-11-15 |
The University Of North Carolina At Chapel Hill |
Coated electrode with enhanced electron emission and ignition characteristics
|
WO2002088025A1
(en)
*
|
2001-04-26 |
2002-11-07 |
New York University |
Method for dissolving carbon nanotubes
|
US6911768B2
(en)
*
|
2001-04-30 |
2005-06-28 |
Hewlett-Packard Development Company, L.P. |
Tunneling emitter with nanohole openings
|
US6683399B2
(en)
*
|
2001-05-23 |
2004-01-27 |
The United States Of America As Represented By The Secretary Of The Air Force |
Field emission cold cathode
|
US6739932B2
(en)
|
2001-06-07 |
2004-05-25 |
Si Diamond Technology, Inc. |
Field emission display using carbon nanotubes and methods of making the same
|
US7341498B2
(en)
*
|
2001-06-14 |
2008-03-11 |
Hyperion Catalysis International, Inc. |
Method of irradiating field emission cathode having nanotubes
|
AU2002367711A1
(en)
*
|
2001-06-14 |
2003-10-20 |
Hyperion Catalysis International, Inc. |
Field emission devices using modified carbon nanotubes
|
WO2002103737A2
(en)
*
|
2001-06-14 |
2002-12-27 |
Hyperion Catalysis International, Inc. |
Field emission devices using ion bombarded carbon nanotubes
|
US7276844B2
(en)
*
|
2001-06-15 |
2007-10-02 |
E. I. Du Pont De Nemours And Company |
Process for improving the emission of electron field emitters
|
US20020195919A1
(en)
*
|
2001-06-22 |
2002-12-26 |
Choi Jong-Seo |
Cathode for electron tube and method of preparing the cathode
|
JP3830416B2
(ja)
*
|
2001-06-28 |
2006-10-04 |
株式会社ノリタケカンパニーリミテド |
電子源用電極およびその製造方法ならびに電子管
|
US6700454B2
(en)
|
2001-06-29 |
2004-03-02 |
Zvi Yaniv |
Integrated RF array using carbon nanotube cathodes
|
JP3774682B2
(ja)
*
|
2001-06-29 |
2006-05-17 |
キヤノン株式会社 |
電子放出素子、電子源および画像形成装置
|
US7566478B2
(en)
|
2001-07-25 |
2009-07-28 |
Nantero, Inc. |
Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
|
US6911682B2
(en)
|
2001-12-28 |
2005-06-28 |
Nantero, Inc. |
Electromechanical three-trace junction devices
|
US6706402B2
(en)
*
|
2001-07-25 |
2004-03-16 |
Nantero, Inc. |
Nanotube films and articles
|
US6835591B2
(en)
|
2001-07-25 |
2004-12-28 |
Nantero, Inc. |
Methods of nanotube films and articles
|
US6924538B2
(en)
|
2001-07-25 |
2005-08-02 |
Nantero, Inc. |
Devices having vertically-disposed nanofabric articles and methods of making the same
|
US6643165B2
(en)
*
|
2001-07-25 |
2003-11-04 |
Nantero, Inc. |
Electromechanical memory having cell selection circuitry constructed with nanotube technology
|
US6574130B2
(en)
*
|
2001-07-25 |
2003-06-03 |
Nantero, Inc. |
Hybrid circuit having nanotube electromechanical memory
|
US6919592B2
(en)
*
|
2001-07-25 |
2005-07-19 |
Nantero, Inc. |
Electromechanical memory array using nanotube ribbons and method for making same
|
US7259410B2
(en)
|
2001-07-25 |
2007-08-21 |
Nantero, Inc. |
Devices having horizontally-disposed nanofabric articles and methods of making the same
|
US6897603B2
(en)
|
2001-08-24 |
2005-05-24 |
Si Diamond Technology, Inc. |
Catalyst for carbon nanotube growth
|
TW516061B
(en)
*
|
2001-09-12 |
2003-01-01 |
Ind Tech Res Inst |
Manufacturing method for triode-type electron emitting source
|
KR100796678B1
(ko)
*
|
2001-09-28 |
2008-01-21 |
삼성에스디아이 주식회사 |
평면 표시 소자용 전자 방출원 조성물, 이를 이용한 평면 표시 소자용 전자 방출원의 제조방법 및 이를 포함하는 평면 표시 소자
|
US7462498B2
(en)
*
|
2001-10-19 |
2008-12-09 |
Applied Nanotech Holdings, Inc. |
Activation of carbon nanotubes for field emission applications
|
US7854861B2
(en)
|
2001-10-19 |
2010-12-21 |
Applied Nanotech Holdings, Inc. |
Well formation
|
US7195938B2
(en)
*
|
2001-10-19 |
2007-03-27 |
Nano-Proprietary, Inc. |
Activation effect on carbon nanotubes
|
US7842522B2
(en)
|
2001-10-19 |
2010-11-30 |
Applied Nanotech Holdings, Inc. |
Well formation
|
US8062697B2
(en)
*
|
2001-10-19 |
2011-11-22 |
Applied Nanotech Holdings, Inc. |
Ink jet application for carbon nanotubes
|
JP2003123623A
(ja)
*
|
2001-10-19 |
2003-04-25 |
Noritake Itron Corp |
電子放出源用カーボンナノチューブおよびその製造方法
|
EP1315191B1
(de)
*
|
2001-11-23 |
2007-08-22 |
Samsung SDI Co. Ltd. |
Zusammensetzung für Paste mit Kohlenstoffnanoröhren, diese Zusammensetzung verwendende Elektronen-emittierende Vorrichtung und deren Herstellungsverfahren
|
JP3839713B2
(ja)
*
|
2001-12-12 |
2006-11-01 |
株式会社ノリタケカンパニーリミテド |
平面ディスプレイの製造方法
|
US6784028B2
(en)
|
2001-12-28 |
2004-08-31 |
Nantero, Inc. |
Methods of making electromechanical three-trace junction devices
|
US7176505B2
(en)
|
2001-12-28 |
2007-02-13 |
Nantero, Inc. |
Electromechanical three-trace junction devices
|
KR100449071B1
(ko)
|
2001-12-28 |
2004-09-18 |
한국전자통신연구원 |
전계 방출 소자용 캐소드
|
KR20030060611A
(ko)
*
|
2002-01-10 |
2003-07-16 |
삼성전자주식회사 |
보호막을 가지는 탄소나노튜브를 구비하는 전계방출소자
|
KR100837393B1
(ko)
*
|
2002-01-22 |
2008-06-12 |
삼성에스디아이 주식회사 |
탄소와 친화도가 높은 금속을 전극으로 구비하는 전자소자
|
JP4259023B2
(ja)
*
|
2002-02-05 |
2009-04-30 |
富士ゼロックス株式会社 |
カーボンナノチューブデバイスの作製方法、およびカーボンナノチューブデバイス
|
JP3791601B2
(ja)
*
|
2002-02-08 |
2006-06-28 |
日本電気株式会社 |
ナノグラファイト構造体の作製方法
|
DE10210045C1
(de)
*
|
2002-03-07 |
2003-05-08 |
Philips Corp Intellectual Pty |
Lichtquelle und Verfahren zur Herstellung einer Folie für die Lichtquelle
|
US7085125B2
(en)
*
|
2002-03-21 |
2006-08-01 |
Chien-Min Sung |
Carbon nanotube devices and uses therefor
|
US7135160B2
(en)
*
|
2002-04-02 |
2006-11-14 |
Carbon Nanotechnologies, Inc. |
Spheroidal aggregates comprising single-wall carbon nanotubes and method for making the same
|
CN100407362C
(zh)
*
|
2002-04-12 |
2008-07-30 |
三星Sdi株式会社 |
场发射显示器
|
JP2003317606A
(ja)
*
|
2002-04-19 |
2003-11-07 |
Mitsubishi Pencil Co Ltd |
電子銃用電極および電子銃
|
US7335395B2
(en)
|
2002-04-23 |
2008-02-26 |
Nantero, Inc. |
Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
|
US7317277B2
(en)
*
|
2002-04-24 |
2008-01-08 |
E.I. Du Pont De Nemours And Company |
Electron field emitter and compositions related thereto
|
US6979947B2
(en)
|
2002-07-09 |
2005-12-27 |
Si Diamond Technology, Inc. |
Nanotriode utilizing carbon nanotubes and fibers
|
JP3851861B2
(ja)
*
|
2002-09-20 |
2006-11-29 |
財団法人ファインセラミックスセンター |
電子放出素子
|
US6798127B2
(en)
*
|
2002-10-09 |
2004-09-28 |
Nano-Proprietary, Inc. |
Enhanced field emission from carbon nanotubes mixed with particles
|
TW594824B
(en)
*
|
2002-12-03 |
2004-06-21 |
Ind Tech Res Inst |
Triode structure of field-emission display and manufacturing method thereof
|
KR100879292B1
(ko)
*
|
2002-12-20 |
2009-01-19 |
삼성에스디아이 주식회사 |
전자 방출 특성을 향상시킬 수 있는 에미터 배열 구조를갖는 전계 방출 표시 장치
|
KR100879293B1
(ko)
*
|
2002-12-26 |
2009-01-19 |
삼성에스디아이 주식회사 |
다층 구조로 형성된 전자 방출원을 구비한 전계 방출표시장치
|
US6958475B1
(en)
|
2003-01-09 |
2005-10-25 |
Colby Steven M |
Electron source
|
US7560136B2
(en)
|
2003-01-13 |
2009-07-14 |
Nantero, Inc. |
Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
|
JP4119279B2
(ja)
*
|
2003-02-21 |
2008-07-16 |
株式会社 日立ディスプレイズ |
表示装置
|
US6762073B1
(en)
*
|
2003-02-24 |
2004-07-13 |
Donald P. Cullen |
Method of fabricating electronic interconnect devices using direct imaging of dielectric composite material
|
US7150801B2
(en)
*
|
2003-02-26 |
2006-12-19 |
Mitsubishi Gas Chemical Company, Inc. |
Process for producing cold field-emission cathodes
|
US20040198892A1
(en)
*
|
2003-04-01 |
2004-10-07 |
Cabot Microelectronics Corporation |
Electron source and method for making same
|
US7447298B2
(en)
*
|
2003-04-01 |
2008-11-04 |
Cabot Microelectronics Corporation |
Decontamination and sterilization system using large area x-ray source
|
KR100932974B1
(ko)
*
|
2003-04-08 |
2009-12-21 |
삼성에스디아이 주식회사 |
전자 방출용 카본계 복합입자의 제조방법
|
US6946784B2
(en)
*
|
2003-05-14 |
2005-09-20 |
Chunghwa Picture Tubes, Ltd. |
Electron gun of monochromic CRT
|
US7531267B2
(en)
|
2003-06-02 |
2009-05-12 |
Kh Chemicals Co., Ltd. |
Process for preparing carbon nanotube electrode comprising sulfur or metal nanoparticles as a binder
|
KR100584671B1
(ko)
*
|
2004-01-14 |
2006-05-30 |
(주)케이에이치 케미컬 |
황 또는 금속 나노입자를 접착제로 사용하는 탄소나노튜브또는 탄소나노파이버 전극의 제조방법 및 이에 의해제조된 전극
|
US7157848B2
(en)
*
|
2003-06-06 |
2007-01-02 |
Electrovac Fabrikation Elektrotechnischer Spezialartikel Gmbh |
Field emission backlight for liquid crystal television
|
US20040256975A1
(en)
*
|
2003-06-19 |
2004-12-23 |
Applied Nanotechnologies, Inc. |
Electrode and associated devices and methods
|
EP1685581A4
(de)
*
|
2003-09-12 |
2009-08-26 |
Applied Nanotech Holdings Inc |
Mulden-ausbildung
|
US7452735B2
(en)
*
|
2003-09-12 |
2008-11-18 |
Applied Nanotech Holdings, Inc. |
Carbon nanotube deposition with a stencil
|
US20050089638A1
(en)
*
|
2003-09-16 |
2005-04-28 |
Koila, Inc. |
Nano-material thermal and electrical contact system
|
US7767185B2
(en)
*
|
2003-09-30 |
2010-08-03 |
Nec Corporation |
Method of producing a carbon nanotube and a carbon nanotube structure
|
US7125308B2
(en)
*
|
2003-12-18 |
2006-10-24 |
Nano-Proprietary, Inc. |
Bead blast activation of carbon nanotube cathode
|
KR20050079339A
(ko)
*
|
2004-02-05 |
2005-08-10 |
삼성에스디아이 주식회사 |
필드 에미터의 제조 방법
|
JP4252546B2
(ja)
*
|
2004-03-24 |
2009-04-08 |
三菱電機株式会社 |
電界放出表示装置の製造方法
|
US8481158B2
(en)
|
2004-04-19 |
2013-07-09 |
Technology Research Institute Of Osaka Prefecture |
Carbon-based fine structure array, aggregate of carbon-based fine structures, use thereof and method for preparation thereof
|
US7834530B2
(en)
*
|
2004-05-27 |
2010-11-16 |
California Institute Of Technology |
Carbon nanotube high-current-density field emitters
|
US7147534B2
(en)
*
|
2004-06-04 |
2006-12-12 |
Teco Nanotech Co., Ltd. |
Patterned carbon nanotube process
|
US7126266B2
(en)
*
|
2004-07-14 |
2006-10-24 |
The Board Of Trustees Of The University Of Illinois |
Field emission assisted microdischarge devices
|
US20060012281A1
(en)
*
|
2004-07-16 |
2006-01-19 |
Nyan-Hwa Tai |
Carbon nanotube field emitter and method for producing same
|
US7736209B2
(en)
|
2004-09-10 |
2010-06-15 |
Applied Nanotech Holdings, Inc. |
Enhanced electron field emission from carbon nanotubes without activation
|
US7573202B2
(en)
*
|
2004-10-04 |
2009-08-11 |
The Board Of Trustees Of The University Of Illinois |
Metal/dielectric multilayer microdischarge devices and arrays
|
US20080012461A1
(en)
*
|
2004-11-09 |
2008-01-17 |
Nano-Proprietary, Inc. |
Carbon nanotube cold cathode
|
CN100370571C
(zh)
*
|
2004-11-12 |
2008-02-20 |
清华大学 |
场发射阴极和场发射装置
|
US7477017B2
(en)
|
2005-01-25 |
2009-01-13 |
The Board Of Trustees Of The University Of Illinois |
AC-excited microcavity discharge device and method
|
KR20060124332A
(ko)
*
|
2005-05-31 |
2006-12-05 |
삼성에스디아이 주식회사 |
전자 방출 소자
|
KR20070046611A
(ko)
*
|
2005-10-31 |
2007-05-03 |
삼성에스디아이 주식회사 |
보호막이 형성된 전자 방출원 및 이를 포함한 전자 방출소자
|
US7786465B2
(en)
*
|
2005-12-20 |
2010-08-31 |
Invention Science Fund 1, Llc |
Deletable nanotube circuit
|
US9159417B2
(en)
*
|
2005-12-20 |
2015-10-13 |
The Invention Science Fund I, Llc |
Deletable nanotube circuit
|
US7989797B2
(en)
*
|
2005-12-20 |
2011-08-02 |
The Invention Science Fund I, Llc |
Connectible nanotube circuit
|
CN100573808C
(zh)
*
|
2006-03-22 |
2009-12-23 |
清华大学 |
场发射照明光源及其制造方法
|
US20070277735A1
(en)
*
|
2006-06-02 |
2007-12-06 |
Nima Mokhlesi |
Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
|
US20070281105A1
(en)
*
|
2006-06-02 |
2007-12-06 |
Nima Mokhlesi |
Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
|
US20100024732A1
(en)
*
|
2006-06-02 |
2010-02-04 |
Nima Mokhlesi |
Systems for Flash Heating in Atomic Layer Deposition
|
US20070281082A1
(en)
*
|
2006-06-02 |
2007-12-06 |
Nima Mokhlesi |
Flash Heating in Atomic Layer Deposition
|
US7622189B2
(en)
*
|
2006-06-21 |
2009-11-24 |
Babcock & Wilcox Technical Services Y-12, Llc |
Ceramic nanostructures and methods of fabrication
|
EP2135258A4
(de)
*
|
2007-04-04 |
2011-03-23 |
Univ California |
Laseraktivierte mikrobeschleunigerplattform
|
CN101388310B
(zh)
*
|
2007-09-14 |
2011-07-27 |
清华大学 |
场发射体及其制备方法
|
WO2009055786A1
(en)
*
|
2007-10-25 |
2009-04-30 |
The Board Of Trustees Of The University Of Illinois |
Electron injection-controlled microcavity plasma device and arrays
|
KR100922399B1
(ko)
*
|
2008-02-29 |
2009-10-19 |
고려대학교 산학협력단 |
전자방출원, 이를 적용한 전자장치 및 전자방출원의제조방법
|
CN102394204B
(zh)
*
|
2008-03-19 |
2014-10-08 |
清华大学 |
场发射电子源
|
CN101604603B
(zh)
*
|
2008-06-13 |
2011-03-23 |
清华大学 |
场发射体及其制备方法
|
CN101625946B
(zh)
*
|
2008-07-09 |
2011-03-30 |
清华大学 |
电子发射器件
|
FR2937180B1
(fr)
*
|
2008-10-15 |
2012-02-03 |
Newstep |
Tube electronique a cathode froide, son procede de fabrication et son utilisation pour ecran d'affichage.
|
JP5063715B2
(ja)
*
|
2010-02-04 |
2012-10-31 |
株式会社日立ハイテクノロジーズ |
電子源,電子銃、それを用いた電子顕微鏡装置及び電子線描画装置
|
RU2486625C2
(ru)
*
|
2011-06-08 |
2013-06-27 |
Открытое акционерное общество "Научно-производственное предприятие "Алмаз" (ОАО "НПП "Алмаз") |
Способ изготовления многоострийных автоэмиссионных катодов
|
CN103959422A
(zh)
*
|
2011-11-28 |
2014-07-30 |
皇家飞利浦有限公司 |
具有可加热场致发射电子发射器的x射线管和操作其的方法
|
RU2675791C2
(ru)
*
|
2014-02-10 |
2018-12-25 |
Люксбрайт Аб |
Рентгеновское устройство
|
CN105513922B
(zh)
*
|
2015-12-14 |
2017-10-20 |
上海海洋大学 |
利用激光纳米焊接增强单壁碳纳米管薄膜场发射性能方法
|
CN111128637B
(zh)
*
|
2018-11-01 |
2021-02-26 |
清华大学 |
场发射体的制备方法
|
EP3933881A1
(de)
|
2020-06-30 |
2022-01-05 |
VEC Imaging GmbH & Co. KG |
Röntgenquelle mit mehreren gittern
|
KR102454223B1
(ko)
*
|
2021-12-01 |
2022-10-14 |
대한민국 |
온실가스 농도 측정을 위한 광센서용 탄소계 소자
|
US12230468B2
(en)
|
2022-06-30 |
2025-02-18 |
Varex Imaging Corporation |
X-ray system with field emitters and arc protection
|