KR100796678B1 - 평면 표시 소자용 전자 방출원 조성물, 이를 이용한 평면 표시 소자용 전자 방출원의 제조방법 및 이를 포함하는 평면 표시 소자 - Google Patents
평면 표시 소자용 전자 방출원 조성물, 이를 이용한 평면 표시 소자용 전자 방출원의 제조방법 및 이를 포함하는 평면 표시 소자 Download PDFInfo
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- KR100796678B1 KR100796678B1 KR1020010060739A KR20010060739A KR100796678B1 KR 100796678 B1 KR100796678 B1 KR 100796678B1 KR 1020010060739 A KR1020010060739 A KR 1020010060739A KR 20010060739 A KR20010060739 A KR 20010060739A KR 100796678 B1 KR100796678 B1 KR 100796678B1
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- electron emission
- display device
- composition
- flat display
- carbon nanotubes
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
Claims (6)
- 카본 나노 튜브;비히클; 및유기 티탄 또는 유기 금속 화합물을 포함하는 전자 방출원 형성용 조성물.
- 삭제
- 카본 나노 튜브, 비히클, 및 유기 티탄 또는 유기 금속 화합물의 첨가제를 혼합하여 카본 나노 튜브 조성물을 제조하고;상기 카본 나노 튜브 조성물을 기판 상에 스크린 인쇄하고;얻어진 기판을 소성하는공정을 포함하는 평면 표시 소자용 전자 방출원의 제조 방법.
- 삭제
- 제 3 항에 있어서, 상기 소성 공정은 250 내지 600℃에서 실시하는 것인 제조 방법.
- 기판;상기 기판 위에 형성된 전극; 및상기 전극 위에 형성되고, 표면에 0.1 내지 100㎛의 크랙(micro-crak)이 형성된 전자 방출원 층을 포함하는 평면 표시 소자.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010060739A KR100796678B1 (ko) | 2001-09-28 | 2001-09-28 | 평면 표시 소자용 전자 방출원 조성물, 이를 이용한 평면 표시 소자용 전자 방출원의 제조방법 및 이를 포함하는 평면 표시 소자 |
US10/179,290 US6858163B2 (en) | 2001-09-28 | 2002-06-26 | Electron emission source composition for flat panel display and method of producing electron emission source for flat panel display using the same |
US11/033,167 US7372194B2 (en) | 2001-09-28 | 2005-01-12 | Electron emission source composition for flat panel display and method of producing electron emission source for flat panel display using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010060739A KR100796678B1 (ko) | 2001-09-28 | 2001-09-28 | 평면 표시 소자용 전자 방출원 조성물, 이를 이용한 평면 표시 소자용 전자 방출원의 제조방법 및 이를 포함하는 평면 표시 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030027450A KR20030027450A (ko) | 2003-04-07 |
KR100796678B1 true KR100796678B1 (ko) | 2008-01-21 |
Family
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Family Applications (1)
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KR1020010060739A Expired - Fee Related KR100796678B1 (ko) | 2001-09-28 | 2001-09-28 | 평면 표시 소자용 전자 방출원 조성물, 이를 이용한 평면 표시 소자용 전자 방출원의 제조방법 및 이를 포함하는 평면 표시 소자 |
Country Status (2)
Country | Link |
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US (2) | US6858163B2 (ko) |
KR (1) | KR100796678B1 (ko) |
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KR100796678B1 (ko) * | 2001-09-28 | 2008-01-21 | 삼성에스디아이 주식회사 | 평면 표시 소자용 전자 방출원 조성물, 이를 이용한 평면 표시 소자용 전자 방출원의 제조방법 및 이를 포함하는 평면 표시 소자 |
KR100814838B1 (ko) * | 2001-11-08 | 2008-03-20 | 삼성에스디아이 주식회사 | 전계 방출 소자의 카본 나노튜브 에미터 형성용 조성물 및그 제조 방법 |
JP2003168355A (ja) * | 2001-11-30 | 2003-06-13 | Sony Corp | 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法 |
KR100932974B1 (ko) | 2003-04-08 | 2009-12-21 | 삼성에스디아이 주식회사 | 전자 방출용 카본계 복합입자의 제조방법 |
US20050064167A1 (en) * | 2003-09-12 | 2005-03-24 | Nano-Proprietary, Inc. | Carbon nanotubes |
KR100965545B1 (ko) * | 2003-11-29 | 2010-06-23 | 삼성에스디아이 주식회사 | 평판 표시 소자의 전자 방출원 형성용 조성물 및 이로부터형성된 전자 방출원 |
KR101018345B1 (ko) * | 2004-08-02 | 2011-03-04 | 삼성에스디아이 주식회사 | 전자 방출원 형성용 조성물, 이를 이용한 전자 방출원제조 방법 및 전자 방출원 |
KR101018346B1 (ko) * | 2004-08-30 | 2011-03-04 | 삼성에스디아이 주식회사 | 전자 방출원 형성용 조성물, 이로부터 형성된 전자 방출원, 상기 전자 방출원을 포함하는 전자 방출 소자 및 그 제조방법 |
KR101046976B1 (ko) * | 2004-10-19 | 2011-07-07 | 삼성에스디아이 주식회사 | 전자 방출원 형성용 조성물, 이를 이용한 전자 방출원제조 방법 및 전자 방출원 |
US20090018229A1 (en) * | 2004-11-17 | 2009-01-15 | Sogah Dotsevi Y | Nanocomposites prepared using nanoadditive containing dispersed silicate layers or inorganic nanoparticles |
KR101166014B1 (ko) * | 2005-02-28 | 2012-07-19 | 삼성에스디아이 주식회사 | 전자 방출원 형성용 조성물, 이를 이용하여 제조된 전자 방출원, 및 상기 전자 방출원을 포함하는 전자 방출 소자 |
KR100676467B1 (ko) * | 2005-02-28 | 2007-03-09 | 재단법인서울대학교산학협력재단 | 졸-겔 코팅과 나노균열 생성기술을 이용한 탄소나노튜브 필드 에미터의 제조방법 |
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DE102007010463B4 (de) * | 2007-03-01 | 2010-08-26 | Sellmair, Josef, Dr. | Vorrichtung zur Feldemission von Teilchen |
KR20100036920A (ko) * | 2008-09-30 | 2010-04-08 | 삼성전자주식회사 | 전자방출원 형성용 조성물, 이로부터 형성된 전자방출원, 그 제조방법 및 이를 채용한 전계 방출 소자 |
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Also Published As
Publication number | Publication date |
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US20030062824A1 (en) | 2003-04-03 |
KR20030027450A (ko) | 2003-04-07 |
US7372194B2 (en) | 2008-05-13 |
US20060066200A1 (en) | 2006-03-30 |
US6858163B2 (en) | 2005-02-22 |
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