[go: up one dir, main page]

DE69637906D1 - Mikrowellen-/millimeterwellen-schaltungsstruktur mit einzeln montierten elementen vom flipchiptyp und herstellungsverfahren dafür - Google Patents

Mikrowellen-/millimeterwellen-schaltungsstruktur mit einzeln montierten elementen vom flipchiptyp und herstellungsverfahren dafür

Info

Publication number
DE69637906D1
DE69637906D1 DE69637906T DE69637906T DE69637906D1 DE 69637906 D1 DE69637906 D1 DE 69637906D1 DE 69637906 T DE69637906 T DE 69637906T DE 69637906 T DE69637906 T DE 69637906T DE 69637906 D1 DE69637906 D1 DE 69637906D1
Authority
DE
Germany
Prior art keywords
microwave
manufacturing
circuit structure
flip chip
method therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69637906T
Other languages
English (en)
Inventor
Mehran Matloubian
Perry A Macdonald
David B Rensch
Lawrence A Larson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T MVPD Group LLC
Original Assignee
Hughes Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Electronics Corp filed Critical Hughes Electronics Corp
Application granted granted Critical
Publication of DE69637906D1 publication Critical patent/DE69637906D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3452—Solder masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13064—High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0315—Oxidising metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Combinations Of Printed Boards (AREA)
DE69637906T 1995-07-07 1996-07-01 Mikrowellen-/millimeterwellen-schaltungsstruktur mit einzeln montierten elementen vom flipchiptyp und herstellungsverfahren dafür Expired - Lifetime DE69637906D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/499,800 US5629241A (en) 1995-07-07 1995-07-07 Microwave/millimeter wave circuit structure with discrete flip-chip mounted elements, and method of fabricating the same
PCT/US1996/011144 WO1997002733A2 (en) 1995-07-07 1996-07-01 Microwave/millimeter wave circuit structure with discrete flip-chip mounted elements, and method of fabricating the same

Publications (1)

Publication Number Publication Date
DE69637906D1 true DE69637906D1 (de) 2009-06-04

Family

ID=23986785

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69637906T Expired - Lifetime DE69637906D1 (de) 1995-07-07 1996-07-01 Mikrowellen-/millimeterwellen-schaltungsstruktur mit einzeln montierten elementen vom flipchiptyp und herstellungsverfahren dafür

Country Status (6)

Country Link
US (2) US5629241A (de)
EP (1) EP0782766B1 (de)
JP (1) JPH10505466A (de)
CA (1) CA2198088C (de)
DE (1) DE69637906D1 (de)
WO (1) WO1997002733A2 (de)

Families Citing this family (189)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69635397T2 (de) * 1995-03-24 2006-05-24 Shinko Electric Industries Co., Ltd. Halbleitervorrichtung mit Chipabmessungen und Herstellungsverfahren
US6072236A (en) * 1996-03-07 2000-06-06 Micron Technology, Inc. Micromachined chip scale package
JP3185918B2 (ja) * 1996-08-05 2001-07-11 株式会社村田製作所 電子装置
US5795818A (en) * 1996-12-06 1998-08-18 Amkor Technology, Inc. Integrated circuit chip to substrate interconnection and method
US5773897A (en) * 1997-02-21 1998-06-30 Raytheon Company Flip chip monolithic microwave integrated circuit with mushroom-shaped, solder-capped, plated metal bumps
US6130483A (en) * 1997-03-05 2000-10-10 Kabushiki Kaisha Toshiba MMIC module using flip-chip mounting
JP3796016B2 (ja) * 1997-03-28 2006-07-12 三洋電機株式会社 半導体装置
US6100853A (en) * 1997-09-10 2000-08-08 Hughes Electronics Corporation Receiver/transmitter system including a planar waveguide-to-stripline adapter
US6123410A (en) * 1997-10-28 2000-09-26 Hewlett-Packard Company Scalable wide-array inkjet printhead and method for fabricating same
EP0920067A3 (de) * 1997-11-12 2001-05-16 Com Dev Ltd. Mikrowellenschalter und Verfahren zu dessen Betrieb
US6677668B1 (en) * 1998-01-13 2004-01-13 Paul T. Lin Configuration for testing a substrate mounted with a most performance-demanding integrated circuit
US6099677A (en) * 1998-02-13 2000-08-08 Merrimac Industries, Inc. Method of making microwave, multifunction modules using fluoropolymer composite substrates
US6642136B1 (en) * 2001-09-17 2003-11-04 Megic Corporation Method of making a low fabrication cost, high performance, high reliability chip scale package
US6137693A (en) * 1998-07-31 2000-10-24 Agilent Technologies Inc. High-frequency electronic package with arbitrarily-shaped interconnects and integral shielding
CN1163954C (zh) * 1998-10-05 2004-08-25 库利克及索发投资有限公司 半导体铜键合焊点表面保护
US6195264B1 (en) 1998-11-18 2001-02-27 International Business Machines Corporation Laminate substrate having joining layer of photoimageable material
US6542720B1 (en) * 1999-03-01 2003-04-01 Micron Technology, Inc. Microelectronic devices, methods of operating microelectronic devices, and methods of providing microelectronic devices
JP2000295030A (ja) * 1999-04-06 2000-10-20 Nec Corp 高周波装置およびその製造方法
WO2000077886A1 (de) * 1999-06-10 2000-12-21 Siemens Aktiengesellschaft Antenne
JP4211187B2 (ja) * 2000-03-15 2009-01-21 三菱電機株式会社 マイクロ波モジュール
EP1484815A1 (de) * 1999-06-29 2004-12-08 Mitsubishi Denki Kabushiki Kaisha Modul mit einer Hochfrequenzschaltung
FR2798002B1 (fr) * 1999-08-26 2001-11-02 Gemplus Card Int Procede de fabrication de micromodules electroniques comprenant une antenne et micromodules obtenus par le procede
US6935023B2 (en) 2000-03-08 2005-08-30 Hewlett-Packard Development Company, L.P. Method of forming electrical connection for fluid ejection device
JP2001274278A (ja) 2000-03-27 2001-10-05 Toshiba Corp マイクロ波半導体装置およびその製造方法
US6546620B1 (en) 2000-06-29 2003-04-15 Amkor Technology, Inc. Flip chip integrated circuit and passive chip component package fabrication method
US6356453B1 (en) * 2000-06-29 2002-03-12 Amkor Technology, Inc. Electronic package having flip chip integrated circuit and passive chip component
US6707419B2 (en) * 2000-08-16 2004-03-16 Raytheon Company Radar transmitter circuitry and techniques
US6903679B2 (en) * 2000-08-16 2005-06-07 Raytheon Company Video amplifier for a radar receiver
AU2001288268A1 (en) * 2000-08-16 2002-02-25 Raytheon Company Near object detection system
KR100767543B1 (ko) * 2000-08-16 2007-10-17 레이던 컴퍼니 스위치형 빔 안테나 구조
KR100713387B1 (ko) * 2000-08-16 2007-05-04 레이던 컴퍼니 적응성 항법 제어용 안전 거리 알고리즘
KR100852810B1 (ko) * 2000-08-16 2008-08-18 레이던 컴퍼니 차량 레이더 시스템들과 기술들
US6333253B1 (en) * 2000-08-24 2001-12-25 Advanced Micro Devices, Inc. Pattern-block flux deposition
US6627999B2 (en) 2000-08-31 2003-09-30 Micron Technology, Inc. Flip-chip with matched signal lines, ground plane and ground bumps adjacent signal bumps
US6462423B1 (en) 2000-08-31 2002-10-08 Micron Technology, Inc. Flip-chip with matched lines and ground plane
WO2002021156A2 (en) * 2000-09-08 2002-03-14 Raytheon Company Path prediction system and method
US6708100B2 (en) * 2001-03-14 2004-03-16 Raytheon Company Safe distance algorithm for adaptive cruise control
US6563464B2 (en) * 2001-03-19 2003-05-13 International Business Machines Corporation Integrated on-chip half-wave dipole antenna structure
SE0100992D0 (sv) * 2001-03-22 2001-03-22 Ericsson Telefon Ab L M Transistor och effektförstärkare med förbättrad bandbredd
US6798313B2 (en) * 2001-06-04 2004-09-28 U.S. Monolithics, L.L.C. Monolithic microwave integrated circuit with bondwire and landing zone bias
US7183995B2 (en) 2001-08-16 2007-02-27 Raytheon Company Antenna configurations for reduced radar complexity
US6970142B1 (en) 2001-08-16 2005-11-29 Raytheon Company Antenna configurations for reduced radar complexity
US6995730B2 (en) * 2001-08-16 2006-02-07 Raytheon Company Antenna configurations for reduced radar complexity
US7176506B2 (en) * 2001-08-28 2007-02-13 Tessera, Inc. High frequency chip packages with connecting elements
US6856007B2 (en) * 2001-08-28 2005-02-15 Tessera, Inc. High-frequency chip packages
US7099293B2 (en) * 2002-05-01 2006-08-29 Stmicroelectronics, Inc. Buffer-less de-skewing for symbol combination in a CDMA demodulator
US20080044128A1 (en) * 2001-10-09 2008-02-21 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPICs) AND OPTICAL TRANSPORT NETWORK SYSTEM EMPLOYING TxPICs
US7672546B2 (en) 2001-10-09 2010-03-02 Infinera Corporation Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips
EP1436870A2 (de) * 2001-10-09 2004-07-14 Infinera Corporation Integrierte fotonische sendschaltung und optisches netzwerk damit
US7751658B2 (en) * 2001-10-09 2010-07-06 Infinera Corporation Monolithic transmitter photonic integrated circuit (TxPIC) having tunable modulated sources with feedback system for source power level or wavelength tuning
US6818985B1 (en) * 2001-12-22 2004-11-16 Skyworks Solutions, Inc. Embedded antenna and semiconductor die on a substrate in a laminate package
DE10208332A1 (de) * 2002-02-27 2003-09-04 Bosch Gmbh Robert Pulsradarvorrichtung und Verfahren zum Erfassen, zum Detektieren und/oder zum Auswerten von mindestens einem Objekt
US6945447B2 (en) * 2002-06-05 2005-09-20 Northrop Grumman Corporation Thermal solder writing eutectic bonding process and apparatus
US6611227B1 (en) 2002-08-08 2003-08-26 Raytheon Company Automotive side object detection sensor blockage detection system and related techniques
DE10237790A1 (de) * 2002-08-17 2004-02-26 Robert Bosch Gmbh Einrichtung zur Erfassung und Auswertung von Objekten im Umgebungsbereich eines Fahrzeugs
US7747114B2 (en) * 2002-10-08 2010-06-29 Infinera Corporation Tilted combiners/decombiners and photonic integrated circuits (PICs) employing the same
US6888420B2 (en) * 2002-11-14 2005-05-03 Hrl Laboratories, Llc RF MEMS switch matrix
US6972480B2 (en) 2003-06-16 2005-12-06 Shellcase Ltd. Methods and apparatus for packaging integrated circuit devices
KR101078621B1 (ko) 2003-07-03 2011-11-01 테쎄라 테크놀로지스 아일랜드 리미티드 집적회로 디바이스를 패키징하기 위한 방법 및 장치
US20050067681A1 (en) * 2003-09-26 2005-03-31 Tessera, Inc. Package having integral lens and wafer-scale fabrication method therefor
WO2005031861A1 (en) * 2003-09-26 2005-04-07 Tessera, Inc. Structure and method of making capped chips including a flowable conductive medium
US20050139984A1 (en) * 2003-12-19 2005-06-30 Tessera, Inc. Package element and packaged chip having severable electrically conductive ties
GB0407568D0 (en) * 2004-04-02 2004-05-05 Bae Systems Plc Receivers
CN100508182C (zh) * 2004-09-21 2009-07-01 日月光半导体制造股份有限公司 具有微带天线结构的半导体封装构造
US8143095B2 (en) 2005-03-22 2012-03-27 Tessera, Inc. Sequential fabrication of vertical conductive interconnects in capped chips
US20060255102A1 (en) * 2005-05-11 2006-11-16 Snyder Rick B Technique for defining a wettable solder joint area for an electronic assembly substrate
JP5180091B2 (ja) * 2005-11-24 2013-04-10 テクニシェ・ウニフェルシテイト・デルフト バラクタ素子および低歪バラクタ回路装置
US7519328B2 (en) 2006-01-19 2009-04-14 Murata Manufacturing Co., Ltd. Wireless IC device and component for wireless IC device
US7936062B2 (en) 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
US20080029879A1 (en) * 2006-03-01 2008-02-07 Tessera, Inc. Structure and method of making lidded chips
JP4998463B2 (ja) 2006-04-10 2012-08-15 株式会社村田製作所 無線ｉｃデバイス
JP4135770B2 (ja) 2006-04-14 2008-08-20 株式会社村田製作所 アンテナ
EP2009736B1 (de) 2006-04-14 2016-01-13 Murata Manufacturing Co. Ltd. Drahtlose ic-vorrichtung
WO2007125752A1 (ja) 2006-04-26 2007-11-08 Murata Manufacturing Co., Ltd. 給電回路基板付き物品
US9064198B2 (en) 2006-04-26 2015-06-23 Murata Manufacturing Co., Ltd. Electromagnetic-coupling-module-attached article
JP4325744B2 (ja) 2006-05-26 2009-09-02 株式会社村田製作所 データ結合器
JPWO2007138836A1 (ja) * 2006-05-30 2009-10-01 株式会社村田製作所 情報端末機器
ATE507538T1 (de) 2006-06-01 2011-05-15 Murata Manufacturing Co Hochfrequenz-ic-anordnung und zusammengesetzte komponente für eine hochfrequenz-ic-anordnung
WO2007145053A1 (ja) 2006-06-12 2007-12-21 Murata Manufacturing Co., Ltd. 電磁結合モジュール、無線ｉｃデバイスの検査システム及びそれを用いた電磁結合モジュール、無線ｉｃデバイスの製造方法
CN101467209B (zh) 2006-06-30 2012-03-21 株式会社村田制作所 光盘
WO2008007326A2 (en) * 2006-07-10 2008-01-17 Nxp B.V. Transponder and method of producing a transponder
JP4957724B2 (ja) 2006-07-11 2012-06-20 株式会社村田製作所 アンテナ及び無線ｉｃデバイス
DE112007001912T5 (de) 2006-08-24 2009-07-30 Murata Mfg. Co., Ltd., Nagaokakyo-shi Testsystem für Hochfrequenz-IC-Vorrichtungen und Verfahren zum Herstellen von Hochfrequenz-IC-Vorrichtungen unter Verwendung desselben
JP4775442B2 (ja) 2006-09-26 2011-09-21 株式会社村田製作所 電磁結合モジュール付き物品
KR100747657B1 (ko) * 2006-10-26 2007-08-08 삼성전자주식회사 매크로 및 마이크로 주파수 튜닝이 가능한 반도체 소자 및이를 갖는 안테나와 주파수 튜닝 회로
EP2056488B1 (de) * 2006-10-27 2014-09-03 Murata Manufacturing Co. Ltd. Artikel mit elektromagnetisch gekoppeltem modul
US8604605B2 (en) 2007-01-05 2013-12-10 Invensas Corp. Microelectronic assembly with multi-layer support structure
WO2008090943A1 (ja) 2007-01-26 2008-07-31 Murata Manufacturing Co., Ltd. 電磁結合モジュール付き容器
WO2008096576A1 (ja) 2007-02-06 2008-08-14 Murata Manufacturing Co., Ltd. 電磁結合モジュール付き包装材
US8009101B2 (en) 2007-04-06 2011-08-30 Murata Manufacturing Co., Ltd. Wireless IC device
JP5024372B2 (ja) 2007-04-06 2012-09-12 株式会社村田製作所 無線ｉｃデバイス
JP4697332B2 (ja) * 2007-04-09 2011-06-08 株式会社村田製作所 無線ｉｃデバイス
US7762472B2 (en) 2007-07-04 2010-07-27 Murata Manufacturing Co., Ltd Wireless IC device
US8235299B2 (en) 2007-07-04 2012-08-07 Murata Manufacturing Co., Ltd. Wireless IC device and component for wireless IC device
CN101601055B (zh) * 2007-04-26 2012-11-14 株式会社村田制作所 无线ic器件
JP4433097B2 (ja) * 2007-04-27 2010-03-17 株式会社村田製作所 無線ｉｃデバイス
EP2141769A4 (de) 2007-04-27 2010-08-11 Murata Manufacturing Co Drahtlose ic-vorrichtung
WO2008142957A1 (ja) 2007-05-10 2008-11-27 Murata Manufacturing Co., Ltd. 無線ｉｃデバイス
WO2008140037A1 (ja) 2007-05-11 2008-11-20 Murata Manufacturing Co., Ltd. 無線ｉｃデバイス
CN101558530B (zh) * 2007-06-27 2013-02-27 株式会社村田制作所 无线ic器件
KR101023582B1 (ko) 2007-07-09 2011-03-21 가부시키가이샤 무라타 세이사쿠쇼 무선 ｉｃ 디바이스
EP2166490B1 (de) 2007-07-17 2015-04-01 Murata Manufacturing Co. Ltd. Drahtlose ic-vorrichtung und elektronische vorrichtung
US20090021352A1 (en) * 2007-07-18 2009-01-22 Murata Manufacturing Co., Ltd. Radio frequency ic device and electronic apparatus
CN101682113B (zh) 2007-07-18 2013-02-13 株式会社村田制作所 无线ic器件
US7830311B2 (en) 2007-07-18 2010-11-09 Murata Manufacturing Co., Ltd. Wireless IC device and electronic device
EP2169594B1 (de) 2007-07-18 2018-03-07 Murata Manufacturing Co., Ltd. Drahtloses ic-bauelement und herstellungsverfahren dafür
JP4561932B2 (ja) * 2007-07-18 2010-10-13 株式会社村田製作所 無線ｉｃデバイス
ATE555518T1 (de) 2007-12-20 2012-05-15 Murata Manufacturing Co Ic-radiogerät
WO2009081683A1 (ja) 2007-12-26 2009-07-02 Murata Manufacturing Co., Ltd. アンテナ装置および無線ｉｃデバイス
JP4518211B2 (ja) 2008-03-03 2010-08-04 株式会社村田製作所 複合アンテナ
JP5267463B2 (ja) * 2008-03-03 2013-08-21 株式会社村田製作所 無線ｉｃデバイス及び無線通信システム
JP4404166B2 (ja) 2008-03-26 2010-01-27 株式会社村田製作所 無線ｉｃデバイス
US7982555B2 (en) * 2008-03-28 2011-07-19 Broadcom Corporation Method and system for processing signals via power splitters embedded in an integrated circuit package
EP2260322A1 (de) * 2008-03-31 2010-12-15 Valeo Radar Systems, Inc. Vorrichtung und verfahren zur erkennung einer automobil-radarsensor-sperre
JP4535209B2 (ja) 2008-04-14 2010-09-01 株式会社村田製作所 無線ｉｃデバイス、電子機器及び無線ｉｃデバイスの共振周波数の調整方法
WO2009136495A1 (ja) 2008-05-09 2009-11-12 国立大学法人九州工業大学 チップサイズ両面接続パッケージ及びその製造方法
JP4609604B2 (ja) 2008-05-21 2011-01-12 株式会社村田製作所 無線ｉｃデバイス
WO2009142068A1 (ja) * 2008-05-22 2009-11-26 株式会社村田製作所 無線ｉｃデバイス及びその製造方法
JP5218558B2 (ja) 2008-05-26 2013-06-26 株式会社村田製作所 無線ｉｃデバイスシステム及び無線ｉｃデバイスの真贋判定方法
KR101148534B1 (ko) * 2008-05-28 2012-05-21 가부시키가이샤 무라타 세이사쿠쇼 무선 ｉｃ 디바이스용 부품 및 무선 ｉｃ 디바이스
JP4557186B2 (ja) 2008-06-25 2010-10-06 株式会社村田製作所 無線ｉｃデバイスとその製造方法
EP2306586B1 (de) 2008-07-04 2014-04-02 Murata Manufacturing Co. Ltd. Drahtlose integrierte schaltung
WO2010021217A1 (ja) 2008-08-19 2010-02-25 株式会社村田製作所 無線ｉｃデバイス及びその製造方法
JP5429182B2 (ja) 2008-10-24 2014-02-26 株式会社村田製作所 無線ｉｃデバイス
DE112009002399B4 (de) * 2008-10-29 2022-08-18 Murata Manufacturing Co., Ltd. Funk-IC-Bauelement
DE112009002384B4 (de) 2008-11-17 2021-05-06 Murata Manufacturing Co., Ltd. Antenne und Drahtlose-IC-Bauelement
CN102273012B (zh) 2009-01-09 2013-11-20 株式会社村田制作所 无线ic器件及无线ic模块
JP5041077B2 (ja) * 2009-01-16 2012-10-03 株式会社村田製作所 高周波デバイス及び無線ｉｃデバイス
JP5267578B2 (ja) 2009-01-30 2013-08-21 株式会社村田製作所 アンテナ及び無線ｉｃデバイス
JP5510450B2 (ja) 2009-04-14 2014-06-04 株式会社村田製作所 無線ｉｃデバイス
JP4687832B2 (ja) 2009-04-21 2011-05-25 株式会社村田製作所 アンテナ装置
CN102449846B (zh) 2009-06-03 2015-02-04 株式会社村田制作所 无线ic器件及其制造方法
WO2010146944A1 (ja) 2009-06-19 2010-12-23 株式会社村田製作所 無線ｉｃデバイス及び給電回路と放射板との結合方法
WO2011001709A1 (ja) 2009-07-03 2011-01-06 株式会社村田製作所 アンテナおよびアンテナモジュール
JP5182431B2 (ja) 2009-09-28 2013-04-17 株式会社村田製作所 無線ｉｃデバイスおよびそれを用いた環境状態検出方法
JP5201270B2 (ja) 2009-09-30 2013-06-05 株式会社村田製作所 回路基板及びその製造方法
JP5304580B2 (ja) 2009-10-02 2013-10-02 株式会社村田製作所 無線ｉｃデバイス
WO2011045970A1 (ja) 2009-10-16 2011-04-21 株式会社村田製作所 アンテナ及び無線ｉｃデバイス
CN102598413A (zh) 2009-10-27 2012-07-18 株式会社村田制作所 收发装置及无线标签读取装置
CN108063314A (zh) 2009-11-04 2018-05-22 株式会社村田制作所 通信终端及信息处理系统
WO2011055702A1 (ja) 2009-11-04 2011-05-12 株式会社村田製作所 無線ｉｃタグ、リーダライタ及び情報処理システム
WO2011055703A1 (ja) 2009-11-04 2011-05-12 株式会社村田製作所 通信端末及び情報処理システム
KR101318707B1 (ko) 2009-11-20 2013-10-17 가부시키가이샤 무라타 세이사쿠쇼 안테나 장치 및 이동체 통신 단말
GB2488450B (en) 2009-12-24 2014-08-20 Murata Manufacturing Co Antenna and mobile terminal
CN102782937B (zh) 2010-03-03 2016-02-17 株式会社村田制作所 无线通信器件及无线通信终端
WO2011108340A1 (ja) 2010-03-03 2011-09-09 株式会社村田製作所 無線通信モジュール及び無線通信デバイス
CN102576940B (zh) 2010-03-12 2016-05-04 株式会社村田制作所 无线通信器件及金属制物品
US10111333B2 (en) * 2010-03-16 2018-10-23 Intersil Americas Inc. Molded power-supply module with bridge inductor over other components
GB2491447B (en) 2010-03-24 2014-10-22 Murata Manufacturing Co RFID system
WO2011122163A1 (ja) 2010-03-31 2011-10-06 株式会社村田製作所 アンテナ装置及び無線通信デバイス
JP5299351B2 (ja) 2010-05-14 2013-09-25 株式会社村田製作所 無線ｉｃデバイス
JP5170156B2 (ja) 2010-05-14 2013-03-27 株式会社村田製作所 無線ｉｃデバイス
JP5376060B2 (ja) 2010-07-08 2013-12-25 株式会社村田製作所 アンテナ及びｒｆｉｄデバイス
GB2537773A (en) 2010-07-28 2016-10-26 Murata Manufacturing Co Antenna apparatus and communication terminal instrument
JP5423897B2 (ja) 2010-08-10 2014-02-19 株式会社村田製作所 プリント配線板及び無線通信システム
JP5234071B2 (ja) 2010-09-03 2013-07-10 株式会社村田製作所 Ｒｆｉｃモジュール
JP5644286B2 (ja) * 2010-09-07 2014-12-24 オムロン株式会社 電子部品の表面実装方法及び電子部品が実装された基板
US9723766B2 (en) 2010-09-10 2017-08-01 Intersil Americas LLC Power supply module with electromagnetic-interference (EMI) shielding, cooling, or both shielding and cooling, along two or more sides
JP5630506B2 (ja) 2010-09-30 2014-11-26 株式会社村田製作所 無線ｉｃデバイス
CN103053074B (zh) 2010-10-12 2015-10-21 株式会社村田制作所 天线装置及通信终端装置
GB2501385B (en) 2010-10-21 2015-05-27 Murata Manufacturing Co Communication terminal device
CN105048058B (zh) 2011-01-05 2017-10-27 株式会社村田制作所 无线通信器件
CN103299325B (zh) 2011-01-14 2016-03-02 株式会社村田制作所 Rfid芯片封装以及rfid标签
WO2012117843A1 (ja) 2011-02-28 2012-09-07 株式会社村田製作所 無線通信デバイス
JP5630566B2 (ja) 2011-03-08 2014-11-26 株式会社村田製作所 アンテナ装置及び通信端末機器
WO2012137717A1 (ja) 2011-04-05 2012-10-11 株式会社村田製作所 無線通信デバイス
JP5482964B2 (ja) 2011-04-13 2014-05-07 株式会社村田製作所 無線ｉｃデバイス及び無線通信端末
US8709933B2 (en) 2011-04-21 2014-04-29 Tessera, Inc. Interposer having molded low CTE dielectric
WO2012157596A1 (ja) 2011-05-16 2012-11-22 株式会社村田製作所 無線ｉｃデバイス
KR101338173B1 (ko) 2011-07-14 2013-12-06 가부시키가이샤 무라타 세이사쿠쇼 무선 통신 디바이스
JP5333707B2 (ja) 2011-07-15 2013-11-06 株式会社村田製作所 無線通信デバイス
CN203850432U (zh) 2011-07-19 2014-09-24 株式会社村田制作所 天线装置以及通信终端装置
CN203553354U (zh) 2011-09-09 2014-04-16 株式会社村田制作所 天线装置及无线器件
CN103380432B (zh) 2011-12-01 2016-10-19 株式会社村田制作所 无线ic器件及其制造方法
CN103430382B (zh) 2012-01-30 2015-07-15 株式会社村田制作所 无线ic器件
US9888568B2 (en) 2012-02-08 2018-02-06 Crane Electronics, Inc. Multilayer electronics assembly and method for embedding electrical circuit components within a three dimensional module
WO2013125610A1 (ja) 2012-02-24 2013-08-29 株式会社村田製作所 アンテナ装置および無線通信装置
JP5304975B1 (ja) 2012-04-13 2013-10-02 株式会社村田製作所 Ｒｆｉｄタグの検査方法及び検査装置
TW201403766A (zh) * 2012-07-09 2014-01-16 矽品精密工業股份有限公司 基板結構、封裝件及其製法
US8884427B2 (en) 2013-03-14 2014-11-11 Invensas Corporation Low CTE interposer without TSV structure
US9646917B2 (en) 2014-05-29 2017-05-09 Invensas Corporation Low CTE component with wire bond interconnects
US9230726B1 (en) 2015-02-20 2016-01-05 Crane Electronics, Inc. Transformer-based power converters with 3D printed microchannel heat sink
JP6432737B2 (ja) * 2015-03-04 2018-12-05 セイコーエプソン株式会社 Ｍｅｍｓデバイス、ヘッド及び液体噴射装置
US10244631B2 (en) * 2015-08-21 2019-03-26 The Boeing Company Hybrid fabrication method for large area microwave circuits
US10181447B2 (en) 2017-04-21 2019-01-15 Invensas Corporation 3D-interconnect
CN107887711A (zh) * 2017-09-20 2018-04-06 讯创(天津)电子有限公司 一种5g可调谐天线
WO2019064430A1 (ja) * 2017-09-28 2019-04-04 三菱電機株式会社 アレーアンテナ装置
JP2020061406A (ja) 2018-10-05 2020-04-16 株式会社村田製作所 半導体装置
US12040284B2 (en) 2021-11-12 2024-07-16 Invensas Llc 3D-interconnect with electromagnetic interference (“EMI”) shield and/or antenna

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR383292A (fr) * 1907-01-03 1908-03-02 Joseph Biessy Suspension élastique pour guidon et selle de cycles et motocycles
US4322778A (en) * 1980-01-25 1982-03-30 International Business Machines Corp. High performance semiconductor package assembly
GB2201545B (en) * 1987-01-30 1991-09-11 Tanaka Electronics Ind Method for connecting semiconductor material
JPH02214205A (ja) * 1989-02-14 1990-08-27 Fujitsu Ltd 電子回路装置
US5071787A (en) * 1989-03-14 1991-12-10 Kabushiki Kaisha Toshiba Semiconductor device utilizing a face-down bonding and a method for manufacturing the same
US5074947A (en) * 1989-12-18 1991-12-24 Epoxy Technology, Inc. Flip chip technology using electrically conductive polymers and dielectrics
US5227812A (en) * 1990-02-26 1993-07-13 Canon Kabushiki Kaisha Liquid jet recording head with bump connector wiring
JPH05160292A (ja) * 1991-06-06 1993-06-25 Toshiba Corp 多層パッケージ
CA2138032A1 (en) * 1992-06-19 1994-01-06 Allen D. Hertz Self-aligning electrical contact array
US5346857A (en) * 1992-09-28 1994-09-13 Motorola, Inc. Method for forming a flip-chip bond from a gold-tin eutectic
US5404006A (en) * 1993-02-22 1995-04-04 Hughes Aircraft Company High power capacity optical receiver apparatus and method employing distributed photodetectors
US5510758A (en) * 1993-04-07 1996-04-23 Matsushita Electric Industrial Co., Ltd. Multilayer microstrip wiring board with a semiconductor device mounted thereon via bumps
JPH0715122A (ja) * 1993-06-23 1995-01-17 Matsushita Electric Ind Co Ltd 接合用フィルム構体および電子部品実装方法
FR2710195B1 (fr) * 1993-09-14 1995-10-13 Thomson Csf Assemblage antenne-circuit électronique.

Also Published As

Publication number Publication date
JPH10505466A (ja) 1998-05-26
WO1997002733A2 (en) 1997-01-30
MX9701735A (es) 1998-03-31
CA2198088C (en) 2001-05-15
EP0782766A3 (de) 1997-11-19
WO1997002733A3 (en) 1997-08-21
CA2198088A1 (en) 1997-01-30
US5757074A (en) 1998-05-26
US5629241A (en) 1997-05-13
EP0782766A2 (de) 1997-07-09
EP0782766B1 (de) 2009-04-22

Similar Documents

Publication Publication Date Title
DE69637906D1 (de) Mikrowellen-/millimeterwellen-schaltungsstruktur mit einzeln montierten elementen vom flipchiptyp und herstellungsverfahren dafür
DE69613645D1 (de) Kostengünstiges hochleistungsgehäuse für mikrowellenschaltungen im 90 ghz-bereich mit bga ein/ausgangsformat und keramischer substrattechnologie
DE69417300D1 (de) Zusammengesetzte Leiterplatte, Halbleiterleistungsmodul mit dieser zusammengesetzten Leiterplatte und Herstellungsmethode dafür
DE69733115D1 (de) Millimeter-Hohlleiter und Schaltungsanordnung mit diesem Hohlleiter
DE69008963D1 (de) Elektronisches Schaltungssubstrat.
DE69225086D1 (de) Koplanarer Richtkoppler und Flip-Chip monolithisch integrierte Mikrowellenschaltungsanordnung mit dem Koppler
FR2631488B1 (fr) Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication
DE69630492D1 (de) Mikrowellenmischerschaltung
DE69118952D1 (de) Halbleitervorrichtung mit integrierter Halbleiterschaltung und Betriebsverfahren dafür
DE69011596D1 (de) Integrierte Schaltung mit Mikroprozessor und programmierbarer innerer Uhr.
DE69615437D1 (de) Integrierte Schaltungsanordnung und Herstellungsverfahren
KR860004457A (ko) 반도체 집적회로장치 및 그의 제조방법과 제조장치
DE69617176D1 (de) Chip-Antenne mit dielektrischen und magnetischen Materialteilen
DE69703525D1 (de) Oszillatorschaltung und Elektronischer Schaltkreis, und Halbleiteranordnung, Uhrwerk, und elektronisches Gerät mit diesem Modul
DE69011070D1 (de) Integrierter Halbleiterschaltkreis und programmierbare logische Einrichtung dazu.
DE69903868D1 (de) Schaltung mit gemischten Signalen und Geräte von integrierten Schaltungen
KR890013782A (ko) 광전자집적회로 및 그 제조방법
DE69031291D1 (de) Testmethode, Testschaltung und integrierter Halbleiterschaltkreis mit Testschaltung
DE59808497D1 (de) Oszillatorstruktur mit wenigstens einem oszillator-schaltkreis und wenigstens einem resonator
FI890412A (fi) Integroitu piiri, joka käsittää logiikkapiirejä ja ainakin yhden vuorovaiheasteen
DE69940237D1 (de) Harzverkapselte elektronische Bauteile und deren Herstellungsverfahren
DE3577019D1 (de) Integrierte schaltung mit feldeffekttransistoren und einem programmierbaren festwertspeicher.
DE69023469D1 (de) Integrierte Schaltung und Herstellungsverfahren dafür.
DE59509972D1 (de) Integrierte schaltungsstruktur mit einem aktiven mikrowellenbauelement und mindestens einem passiven bauelement
DE69526162D1 (de) Integrierte Halbleiterschaltung mit prüfbaren Blöcken

Legal Events

Date Code Title Description
8364 No opposition during term of opposition