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CN1163954C - 半导体铜键合焊点表面保护 - Google Patents

半导体铜键合焊点表面保护 Download PDF

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Publication number
CN1163954C
CN1163954C CNB998141380A CN99814138A CN1163954C CN 1163954 C CN1163954 C CN 1163954C CN B998141380 A CNB998141380 A CN B998141380A CN 99814138 A CN99814138 A CN 99814138A CN 1163954 C CN1163954 C CN 1163954C
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CN
China
Prior art keywords
metal
copper
hydride
layer
packaging part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB998141380A
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English (en)
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CN1329752A (zh
Inventor
��˶���N���¶�
N·穆尔德施瓦
T·W·埃利斯
C·赫奥尔特
M·A·埃舍尔曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kulicke and Soffa Industries Inc
Original Assignee
Kulicke and Soffa Investments Inc
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Filing date
Publication date
Priority claimed from US09/330,906 external-priority patent/US6352743B1/en
Application filed by Kulicke and Soffa Investments Inc filed Critical Kulicke and Soffa Investments Inc
Publication of CN1329752A publication Critical patent/CN1329752A/zh
Application granted granted Critical
Publication of CN1163954C publication Critical patent/CN1163954C/zh
Anticipated expiration legal-status Critical
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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Abstract

保护铜电路的非绝缘部分的表面免受环境污染对该表面到另一金属表面的连接的损害的方法，所述方法的特征在于用厚度适合于不用助熔剂的焊接的陶瓷材料层涂敷该表面的步骤，并且当该表面被接合以获得表面之间的金属对金属的接触时容易拆卸。还公开了被涂敷的包括半导体晶片的电子封装件。

Description

半导体铜键合焊点表面保护
技术领域
本发明涉及到用陶瓷涂层保护半导体铜键合焊点表面的方法，该陶瓷涂层在球形、楔形或倒装片键合期间，对于在键合表面和键合到上面的引线之间获得金属对金属的接触来说是容易拆卸的。在持续暴露于水和水溶液的过程中，比如在切片期间，本方法保护铜键合焊点。
背景技术
在半导体器件上使用铜键合焊点来替代铝，如果不是因为铜表面的空气污染，使迅速氧化形成一层膜，用标准金属丝键合机不能去除这层膜，并且要求在焊料型互连，例如倒装片键合中使用助熔剂的话，将会成为有吸引力的一种变通方法。目前克服这个问题的尝试涉及保护气体的使用，保护气体不可避免是昂贵和复杂的，并限制键合头和工件夹具的移动，或者使用贵重金属或用更昂贵的惰性金属涂镀，都会导致在键合焊点界面上形成不想要的金属间化合物。
美国专利No.5771157在粘合形成后，用树脂包封铝线到铜键合焊点之间的楔形键合。楔形键合之前，对铜键合焊点没有提供防止氧化的保护。
美国专利No.5785236用铝表面层保护铜键合焊点，防止氧化。这贬低了寻求用铜键合焊点代替铝键合焊点获得的优点。
在引线键合或倒装片焊接之前，仍保留有对可以防止铜键合焊点表面氧化的方法的需要。
发明内容
这个需要能被本发明满足。陶瓷涂层现在已经被开发，用于铜键合焊点的键合表面，该表面在球形、楔形或倒装片键合期间，对于在键合表面和键合到其上的引线之间获得金属对金属的接触，以及获得适合于不用助熔剂的键合表面来说是容易拆卸的。
也已经发现同样的陶瓷涂层一般能被用于保护电子封装件的铜表面。那就是说，本发明提供陶瓷涂层，用于保护有机基底封装件、金属基底封装件、陶瓷基底封装件等等的铜表面。
按照本发明的一个方面，提供了一种保护在电子封装基底表面上所形成的铜电路的非绝缘部分免受对所述铜电路的非绝缘部分到另一个金属表面的接合有害的环境污染的方法，该方法的特征在于，用选自铜-稀土金属络合物或铜-非混溶金属的材料构成的单层的氢化物形成层涂镀所述铜电路的非绝缘部分；并且将所述的氢化物形成层暴露到含氢的还原环境中以形成金属氢化物表面层；其中，具有一定厚度的所述氢化物形成层形成金属氢化物表面层，该表面层适合于不用助熔剂的焊接，并且在球形或楔形引线键合以获得键合表面和键合其上的引线之间的金属对金属的接触期间，容易拆卸。
所述金属氢化物形成层在暴露到所述还原环境之前被立即涂镀在所述铜电路的非绝缘部分上。
其中将所述氢化物形成层暴露在所述还原环境中的所述步骤，包括在含氢气的还原气氛中加热所述氢化物形成层，或用含氢的等离子体接触所述氢化物形成层。
所述氢化物形成层通过汽相淀积、电镀或无电镀被涂镀在所述铜电路的非绝缘部分上。所述氢化物形成层包括通过汽相淀积、电镀或无电镀在已经淀积了所述稀土金属的铜电路非绝缘部分上形成铜-稀土金属络合物，并且，所述方法还包括加热所述淀积的稀土金属层以形成所述铜络合物的步骤。
所述氢化物形成层包括铜-非混溶金属。具有所述铜-非混溶金属的所述氢化物形成层是通过用所述铜-非混溶金属伴随铜淀积，接着加热使得所述铜-非混溶金属迁移到键合表面以形成所述的氢化物形成层而形成的。所述铜-非混溶金属层的厚度小于所述铜电路的非绝缘部分和所述所述铜-非混溶金属层的厚度总和的10％。
该方法还可以包括通过所述金属氢化物表面层将另一个金属表面键合或焊接到所述铜电路的非绝缘部分的步骤。
所述铜电路的非绝缘部分是铜半导体键合焊点的键合表面，且具有一定厚度的所述的金属氢化物形成层形成适合于不用助熔剂焊接的金属氢化物表面层，并且在球形或楔形引线键合以获得键合表面和键合其上的引线之间的金属对金属的接触期间，该表面层容易拆卸。
本发明还提供了一种电子封装件，其特征在于，用选自形成金属氢化物的铜-稀土金属络合物或铜-非混溶金属的材料组成的单层的氢化物形成层涂镀铜电路的非绝缘部分，其中在所述的氢化物形成层暴露到含氢的还原环境中时，形成适合于不用助熔剂进行焊接的一定厚度的氢化物层，并当所述铜电路的非绝缘部分被键合到另一个金属表面以获得他们二者之间的金属对金属的接触时，该氢化物层容易拆卸。
所述封装件包括有机基底封装件、金属基底封装件或陶瓷基底封装件。
所述氢化物形成层包括铜-非混溶金属。
所述铜-非混溶金属选自Ta、V和Nb。
所述氢化物形成层包括铜-稀土金属络合物。
所述稀土金属选自La、Y和Ce。
所述封装件中的半导体晶片包括至少一个具有非绝缘铜键合焊点的器件。
本发明也提供了一种电子封装件，其特征在于，用铜-稀土金属络合物涂镀铜电路的非绝缘部分，在所述铜-稀土金属络合物形成和暴露到含氢的还原环境中时，形成适合于不用助熔剂进行焊接的一定厚度的单层的氢化物层，并且当所述铜电路的非绝缘部分被键合到另一个金属表面以获得他们二者之间的金属对金属的接触时，该氢化物层容易拆卸。
所述封装件中的半导体晶片包括至少一个具有非绝缘铜键合焊点的器件。
所述封装件包括有机基底封装件、金属基底封装件或陶瓷基底封装件。
所述稀土金属选自La、Y和Ce。
本发明最后还提供了一种电子封装件，其特征在于，用铜-稀土金属络合物的金属氢化物或铜-非混溶金属的金属氢化物组成的金属氢化物化合物的单层的表面层涂镀铜电路的非绝缘部分，具有一定厚度的所述氢化物形成层适合于不用助熔剂的焊接，并且当所述铜电路的非绝缘部分被键合到另一个金属表面以获得他们二者之间的金属对金属的接触时，该氢化物层容易拆卸。
所述氢化物层包括铜-非混溶金属的氢化物。
所述铜-非混溶金属选自Ta、V和Nb。
所述氢化物层由铜-稀土金属络合物的氢化物组成。
所述稀土金属选自La、Y和Ce。
所述封装件包括有机基底封装件、金属基底封装件或陶瓷基底封装件。
所述封装件中的半导体晶片包括至少一个具有非绝缘铜键合焊点的器件，所述封装件中至少有一条引线被球形或楔形键合到所述器件的键合焊点上。
所述封装件中的半导体晶片包括至少一个具有非绝缘铜键合焊点的器件，该键合焊点用金属氢化物层涂镀，该氢化物层在球形或楔形引线键合以获得每一个键合表面和键合其上的引线之间金属对金属的接触期间，是容易拆卸的。
所述封装件中至少有一条引线被球形或楔形键合到所述器件的键合焊点上。
所述器件是倒装片，其中至少一条引线被焊接到所述金属氢化物涂镀的键合焊点。
本发明特别适合于保护铜键合焊点的键合表面。因此，在本发明的优选实施方案中，铜电路的未绝缘部分是指铜半导体键合焊点的键合表面。
本发明因此提供具有未绝缘铜电路表面的电子封装件，它具有能够在键合或焊接处被去除的涂层。本发明的这个方面包括具有铜电路的未绝缘部分的电子封装件，该未绝缘部分用一层稀土金属涂镀，稀土金属与铜形成络合物。在铜络合物的形成并暴露到含有氢的还原环境中时，稀土金属层具有厚度使得形成陶瓷氢化物层，该陶瓷氢化物层的厚度适合于不用助熔剂的焊接，并提供具有前面提到的硬度的层。
本发明的这个方面于是也包括具有铜电路的未绝缘部分的电子封装件，该未绝缘部分具有保护性陶瓷金属氢化物涂镀。
本发明的方法提供了使用现有设备将引线键合到铜电路的能力，不用改变引线键合机，并且没有附加费用和没有对保护气体技术和硬件的限制。本发明的前述和其他目的、特点和优点，从结合附图的优选实施方案的下列详细描述中更容易理解。
附图说明
唯一的附图是按照本发明的一种方法的示意图，其中按照本发明的半导体器件也被描述，该器件有铜键合焊点，其键合表面用氢化物形成材料和金属氢化物涂镀。
具体实施方式
本发明在电子封装件的铜电路键合表面上形成保护性陶瓷涂层，其厚度适合于不用助熔剂的焊接。在每一个键合表面和键合在上面的引线之间获得金属对金属的接触的键合期间，陶瓷层厚度的选择应能够提供这一层容易拆卸所要求的至少最小硬度。
陶瓷涂层，而不是金属涂层被采用，因为金属层是可延展的和在冲击下发生塑性变形。因为陶瓷材料不能在塑性区变形，冲击打碎陶瓷层，并允许它在引线键合期间被推开。
基本上所有通常使用的陶瓷材料具有的硬度都适合于本发明使用。陶瓷硬度的一种测度是洛氏表面硬度度量(45-N)，由Somiya在Advanced Technical Ceramics(Prentice Hall，Englewood Cliffs，NJ 1996)中定义。适合用于本发明的陶瓷材料具有大于大约38的洛氏硬度(N-45)。
为本发明的目的，名词陶瓷材料的意义采用Callister在MaterialsScience and Engineering，An Introduction(3rd Ed.，John Wiley &Sons，New York 1994)第4页中定义的意思。Callister定义陶瓷材料为金属和非金属元素之间的化合物，最常见的是氧化物、氮化物和碳化物。这个分类中的陶瓷材料包括粘土矿物、胶粘剂和玻璃的复合材料。陶瓷材料是绝缘和绝热的，并且比金属和聚合物更能承受高温和苛刻的环境。至于力学性能，陶瓷材料是硬的，但非常脆。
本发明的一种方法和装置在唯一的附图中被描述，其中半导体器件(未示出)的铜键合焊点10的键合表面12被清洁(阶段I)。如果该铜表面是干净的，没有被暴露到污染的空气中，则不需要阶段I的净化。在所描述的实施方案中，键合表面12用铜-不混溶金属形成的氢化物或铜-稀土金属络合物形成的氢化物层14涂镀(阶段II)。为了表面层14的恰当涂镀，必须还原键合焊点10的表面12上形成的氧化物、氢氧化物和硫化物。只有在这个还原完成之后，才能执行恰当的表面涂镀。表面12能通过暴露到还原气体中而被还原，比如含有氢的气体，或基本上通过任何其他常规表面还原工艺，包括净化技术比如等离子体净化。
完全不混溶于铜的金属的例子包括Ta，V和Nb，但不限定于这些。与铜络合的稀土金属的例子包括La，Y和Ce，但不限定于这些。
铜键合焊点10的表面12用金属层14通过常规汽相淀积或类似工艺覆盖。为了形成铜络合物，稀土金属可能在淀积之后需要加热步骤。
铜-不混溶的氢化物形成金属的表面层能通过可选择的途径形成。铜-不混溶的金属可以与铜伴随淀积，与铜键合焊点在晶片制造期间的形成一样。通过在晶片制造之后加热晶片，伴随淀积的不混溶的金属将迁移到铜键合焊点的表面，形成氧化保护层。无电镀或电镀技术也可以被采用。
层14淀积的厚度应该能够形成易拆卸的氢化物层。那就是，得到的陶瓷层应该具有厚度足以提供洛氏硬度(N-45)大于约38的层。适合的陶瓷层具有的厚度在大约10和1000埃之间，优选厚度在大约25到500埃之间。
当稀土金属被采用时，它最好被淀积在一薄层内，薄得足以形成基本上纯的铜络合物。使用厚度从大约10到1000埃的稀土金属层能实现这一点。
铜-不混溶的金属层最好薄到足以有成本竞争力和允许简化制造。为了这些目的，层14应该不厚于键合焊点10和层14总厚度的1/10。从大约10到1000埃的厚度是优选的。
通过用氢还原，或者在含氢的气体中加热键合焊点，或者通过暴露键合焊点到含氢的等离子体中，例如等离子体净化操作，层14然后被转变成氢化物层(阶段III)。一旦形成，氢化物层16在室温是稳定的。层14的淀积或氢转变没有必要在晶片制造时进行。两种处理能在后面的时间进行。如上所述，为了层14的恰当淀积，键合焊点10的表面12必须在淀积之前净化。
氢化物形成步骤能发生在引线键合或倒装片键合之前的任一阶段，只要还原环境十分有活性，足以使层14还原以去除任何空气污染。适合的还原条件能被本领域普通技术人员容易地确定而不用过多的试验。
氢化物层16为键合焊点10的表面12提供抗氧化能力。然而，因为氢化物层是易拆卸的，常规的球形或楔形引线键合能被实现，以获得表面12和键合在其上的引线(未示出)之间的金属对金属接触，也提供为焊接操作制备的表面。
氢化物由于两种机制而在引线键合或焊接期间迅速分解。一种机制是力学的，来自于氢化物层的脆性。氢化物也会在键合期间受热分解，形成氢气覆盖在键合焊点本身上，也防止了氧化。
氢化工艺不必须在晶片制造时进行。氢化处理能在引线键合或焊接之前的任一阶段进行，只要含氢的气氛十分活化，足以从表面层还原任何污染物，并随后使表面层氢化。
本发明也包括单步工艺，其中易拆卸的陶瓷涂层不是金属氢化物。改为用一层陶瓷材料涂镀清洁的铜键合焊点，陶瓷材料的厚度适合于不用助熔剂的焊接，并提供洛氏硬度(N-45)大于大约38的层，使得该层在球形或楔形引线键合期间容易拆卸，以获得在每一个键合表面和键合在其上的引线之间的金属对金属接触。
适合的陶瓷材料的例子包括硅、钛和钽的氮化物和碳化物；铝、镁和锆的氧化物；二氧化硅和二氧化钛；碳化钨和碳化硼；和立方氮化硼和金刚石。
这些涂层材料也使用常规汽相淀积或类似技术来形成。
除了半导体的键合焊点，使用相同的材料和方法步骤，本发明也能被用来涂镀铜电路的非绝缘表面。因此，在键合有机基底封装件的非绝缘铜电路表面之前，同样的陶瓷涂层能被用于保护，这些有机基底封装件比如是聚合物球栅阵列(PBGA)、增强聚合物球栅阵列(EPBGA)、带状球栅阵列(TBGA)等等；金属基底封装件比如是金属四线扁平封装件(MQFP)、金属引线芯片载体(MLCC)、薄小外形封装件(TSOP)等等；而陶瓷基底封装件比如是陶瓷四线扁平封装件(CQFP)、陶瓷双列直插式封装件(CDIP)、无引线陶瓷芯片载体(LCCC)等等。
本发明为电子封装件的非绝缘铜电路部分提供抗氧化表面，该表面能使用常规技术进行球形或楔形引线键合，而对当前球形和楔形引线键合或倒装片键合工艺和设备无需改变或增加。
下述非限定的实例描述了本发明的某些方面，但并不意味着限制本发明的有效范围。所有部分和百分比是指重量，除非另外指出，而且所有温度是指摄氏度。
实例
通过汽相淀积制作了铜厚度至少为2000埃的铜晶片。通过溅射技术制作了厚度在10到1000埃之间的易拆卸氮化硅陶瓷涂层。
使用各种金丝和K&S Model 8020引线键合器进行引线球键合。下面的引线键合工艺条件被采用：
恒定速度＝0.25-1.0mil/msec.
超声波水平＝35-250mAmp或相等的功率或电压设置
键合时间＝5-50msec.
键合力＝10-40g
自由空气球直径＝1.4-3.0mil
各种各样的金丝类型被尝试，并且都被发现是容易键合的：AFW-8，AFW-14，AFW-88，AFW-FP和AFW-FP2。较硬的线AFW-FP和AFW-FP2表现最好。
各种各样的键合工具(毛细管)被使用，并且都被发现在键合球形区产生键合能力，而毛细管是为其设计的。表现最好的毛细管的零件号是414FA-2146-335和484FD-2053-335。
铜引线也被键合到陶瓷涂敷的键合焊点。采用惰性保护气体来形成球。对于键合球尺寸相同的金球，键合参数不完全一样，但是键合参数范围与铜基底上键合金球的范围没有太大不同。
前面优选实施方案的描述应该认为是对权利要求所定义的本发明的描述，而不是限定。上面说明的特征的大量变化和组合能被利用，而不偏离目前要求权利的发明。这样的改变不应该被看作脱离了本发明的构思和范围，并被认为包括在下列权利要求的范围内。

Claims (30)

1.一种保护在电子封装基底表面上所形成的铜电路的非绝缘部分免受对所述铜电路的非绝缘部分到另一个金属表面的接合有害的环境污染的方法，该方法的特征在于，用选自铜-稀土金属络合物或铜-非混溶金属的材料构成的单层的氢化物形成层涂镀所述铜电路的非绝缘部分；并且
将所述的氢化物形成层暴露到含氢的还原环境中以形成金属氢化物表面层；
其中，具有一定厚度的所述氢化物形成层形成金属氢化物表面层，该表面层适合于不用助熔剂的焊接，并且在球形或楔形引线键合以获得键合表面和键合其上的引线之间的金属对金属的接触期间，容易拆卸。
2.根据权利要求1的方法，其特征在于，所述金属氢化物形成层在暴露到所述还原环境之前被立即涂镀在所述铜电路的非绝缘部分上。
3.根据权利要求1的方法，其特征在于，将所述氢化物形成层暴露在所述还原环境中的所述步骤，包括在含氢气的还原气氛中加热所述氢化物形成层，或用含氢的等离子体接触所述氢化物形成层。
4.根据权利要求1的方法，其特征在于，所述氢化物形成层通过汽相淀积、电镀或无电镀被涂镀在所述铜电路的非绝缘部分上。
5.根据权利要求4的方法，其特征在于，所述氢化物形成层包括通过汽相淀积、电镀或无电镀在已经淀积了所述稀土金属的铜电路非绝缘部分上形成铜-稀土金属络合物，并且，所述方法还包括加热所述淀积的稀土金属层以形成所述铜络合物的步骤。
6.根据权利要求1的方法，其特征在于，所述氢化物形成层包括铜-非混溶金属。
7.根据权利要求6的方法，其特征在于，具有所述铜-非混溶金属的所述氢化物形成层是通过用所述铜-非混溶金属伴随铜淀积，接着加热使得所述铜-非混溶金属迁移到键合表面以形成所述的氢化物形成层而形成的。
8.根据权利要求7的方法，其特征在于，所述铜-非混溶金属层的厚度小于所述铜电路的非绝缘部分和所述所述铜-非混溶金属层的厚度总和的10％。
9.根据权利要求1的方法，其特征在于，该方法还包括通过所述金属氢化物表面层将另一个金属表面键合或焊接到所述铜电路的非绝缘部分的步骤。
10.根据权利要求1的方法，其特征在于，所述铜电路的非绝缘部分是铜半导体键合焊点的键合表面，且具有一定厚度的所述的金属氢化物形成层形成适合于不用助熔剂焊接的金属氢化物表面层，并且在球形或楔形引线键合以获得键合表面和键合其上的引线之间的金属对金属的接触期间，该表面层容易拆卸。
11.一种电子封装件，其特征在于，用选自形成金属氢化物的铜-稀土金属络合物或铜-非混溶金属的材料组成的单层的氢化物形成层涂镀铜电路的非绝缘部分，其中在所述的氢化物形成层暴露到舍氢的还原环境中时，形成适合于不用助熔剂进行焊接的一定厚度的氢化物层，并当所述铜电路的非绝缘部分被键合到另一个金属表面以获得他们二者之间的金属对金属的接触时，该氢化物层容易拆卸。
12.根据权利要求11的封装件，其特征在于，所述封装件包括有机基底封装件、金属基底封装件或陶瓷基底封装件。
13.根据权利要求11的封装件，其特征在于，所述氢化物形成层包括铜-非混溶金属。
14.根据权利要求11的封装件，其特征在于，所述铜-非混溶金属选自Ta、V和Nb。
15.根据权利要求11的封装件，其特征在于，所述氢化物形成层包括铜-稀土金属络合物。
16.根据权利要求15的封装件，其特征在于，所述稀土金属选自La、Y和Ce。
17.根据权利要求11的封装件，其特征在于，所述封装件中的半导体晶片包括至少一个具有非绝缘铜键合焊点的器件。
18.一种电子封装件，其特征在于，用铜-稀土金属络合物涂镀铜电路的非绝缘部分，在所述铜-稀土金属络合物形成和暴露到含氢的还原环境中时，形成适合于不用助熔剂进行焊接的一定厚度的单层的氢化物层，并且当所述铜电路的非绝缘部分被键合到另一个金属表面以获得他们二者之间的金属对金属的接触时，该氢化物层容易拆卸。
19.根据权利要求18的封装件，其特征在于，所述封装件中的半导体晶片包括至少一个具有非绝缘铜键合焊点的器件。
20.根据权利要求18的封装件，其特征在于，所述封装件包括有机基底封装件、金属基底封装件或陶瓷基底封装件。
21.根据权利要求18的封装件，其特征在于，所述稀土金属选自La、Y和Ce。
22.一种电子封装件，其特征在于，用铜-稀土金属络合物的金属氢化物或铜-非混溶金属的金属氢化物组成的金属氢化物化合物的单层的表面层涂镀铜电路的非绝缘部分，具有一定厚度的所述氢化物形成层适合于不用助熔剂的焊接，并且当所述铜电路的非绝缘部分被键合到另一个金属表面以获得他们二者之间的金属对金属的接触时，该氢化物层容易拆卸。
23.根据权利要求22的封装件，其特征在于，所述氢化物层包括铜-非混溶金属的氢化物。
24.根据权利要求23的封装件，其特征在于，所述铜-非混溶金属选自Ta、V和Nb。
25.根据权利要求22的封装件，其特征在于，所述氢化物层由铜-稀土金属络合物的氢化物组成。
26.根据权利要求22的封装件，其特征在于，所述稀土金属选自La、Y和Ce。
27.根据权利要求22的封装件，其特征在于，所述封装件包括有机基底封装件、金属基底封装件或陶瓷基底封装件。
28.根据权利要求22的封装件，其特征还在于，所述封装件中的半导体晶片包括至少一个具有非绝缘铜键合焊点的器件，所述封装件中至少有一条引线被球形或楔形键合到所述器件的键合焊点上。
29.根据权利要求22的封装件，其特征在于，所述封装件中的半导体晶片包括至少一个具有非绝缘铜键合焊点的器件，该键合焊点用金属氢化物层涂镀，该氢化物层在球形或楔形引线键合以获得每一个键合表面和键合其上的引线之间金属对金属的接触期间，是容易拆卸的。
30.根据权利要求29的封装件，其特征还在于，至少有一条引线被球形或楔形键合到所述器件的键合焊点上。
31.根据权利要求30的封装件，其特征在于，所述器件是倒装片，其中至少一条引线被焊接到所述金属氢化物涂镀的键合焊点。
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US6885104B2 (en) 2005-04-26
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