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DE69620177D1 - Reflektierende halbleitersubstrate - Google Patents

Reflektierende halbleitersubstrate

Info

Publication number
DE69620177D1
DE69620177D1 DE69620177T DE69620177T DE69620177D1 DE 69620177 D1 DE69620177 D1 DE 69620177D1 DE 69620177 T DE69620177 T DE 69620177T DE 69620177 T DE69620177 T DE 69620177T DE 69620177 D1 DE69620177 D1 DE 69620177D1
Authority
DE
Germany
Prior art keywords
semiconductor substrates
reflective semiconductor
reflective
substrates
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69620177T
Other languages
English (en)
Other versions
DE69620177T2 (de
Inventor
Timothy Carline
John Robbins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of DE69620177D1 publication Critical patent/DE69620177D1/de
Publication of DE69620177T2 publication Critical patent/DE69620177T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H10F77/1465—Superlattices; Multiple quantum well structures including only Group IV materials, e.g. Si-SiGe superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Spectrometry And Color Measurement (AREA)
DE69620177T 1995-06-05 1996-06-04 Reflektierende halbleitersubstrate Expired - Lifetime DE69620177T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9511336.1A GB9511336D0 (en) 1995-06-05 1995-06-05 Reflecting semiconductor substrates
PCT/GB1996/001324 WO1996039719A1 (en) 1995-06-05 1996-06-04 Reflecting semiconductor substrates

Publications (2)

Publication Number Publication Date
DE69620177D1 true DE69620177D1 (de) 2002-05-02
DE69620177T2 DE69620177T2 (de) 2002-10-31

Family

ID=10775524

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69620177T Expired - Lifetime DE69620177T2 (de) 1995-06-05 1996-06-04 Reflektierende halbleitersubstrate

Country Status (9)

Country Link
US (1) US6111266A (de)
EP (1) EP0834198B1 (de)
JP (1) JP4137999B2 (de)
KR (1) KR100444638B1 (de)
AU (1) AU5905696A (de)
CA (1) CA2219141C (de)
DE (1) DE69620177T2 (de)
GB (2) GB9511336D0 (de)
WO (1) WO1996039719A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19723177A1 (de) 1997-06-03 1998-12-10 Daimler Benz Ag Spannungsgesteuerter wellenlängenselektiver Photodetektor
US6423984B1 (en) * 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
EP1226612A4 (de) * 1999-05-06 2007-01-24 Univ Boston Im sizilium vergrabene, reflektierende schicht und verfahren zu derenherstellung
US6561693B1 (en) * 2000-09-21 2003-05-13 Lockheed Martin Corporation Remote temperature sensing long wave length modulated focal plane array
US6498336B1 (en) * 2000-11-15 2002-12-24 Pixim, Inc. Integrated light sensors with back reflectors for increased quantum efficiency
US7501303B2 (en) 2001-11-05 2009-03-10 The Trustees Of Boston University Reflective layer buried in silicon and method of fabrication
FR2833757B1 (fr) * 2001-12-13 2004-11-05 Commissariat Energie Atomique Dispositif d'emission de lumiere et procede de fabrication d'un tel dispositif
US20060102870A1 (en) * 2004-10-20 2006-05-18 Viens Jean F Infrared detection material and method of production
KR100664988B1 (ko) 2004-11-04 2007-01-09 삼성전기주식회사 광추출효율이 향상된 반도체 발광소자
US7279380B2 (en) * 2004-11-10 2007-10-09 Macronix International Co., Ltd. Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method
US20080179636A1 (en) * 2007-01-27 2008-07-31 International Business Machines Corporation N-fets with tensilely strained semiconductor channels, and method for fabricating same using buried pseudomorphic layers
US20090078316A1 (en) * 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
US9362428B2 (en) 2012-11-27 2016-06-07 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10388806B2 (en) 2012-12-10 2019-08-20 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10916669B2 (en) 2012-12-10 2021-02-09 Artilux, Inc. Photonic lock based high bandwidth photodetector
EP2889917A3 (de) * 2013-12-28 2015-07-29 Shu-Lu Chen Auf photonischer Kopplung basierender Fotodetektor mit hoher Bandbreite
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
CN107393984B (zh) * 2017-06-27 2019-08-20 上海集成电路研发中心有限公司 一种提高光吸收率的量子阱红外探测器及其制作方法
US10892295B2 (en) 2018-01-10 2021-01-12 Microsoft Technology Licensing, Llc Germanium-modified, back-side illuminated optical sensor
WO2021002114A1 (ja) * 2019-07-01 2021-01-07 富士フイルム株式会社 光検出素子、光検出素子の製造方法およびイメージセンサ
DE102020201998B4 (de) 2020-02-18 2024-02-22 Eagleburgmann Germany Gmbh & Co. Kg Spalttopf mit integrierter Kühlung oder Heizung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5315128A (en) * 1993-04-30 1994-05-24 At&T Bell Laboratories Photodetector with a resonant cavity

Also Published As

Publication number Publication date
DE69620177T2 (de) 2002-10-31
CA2219141C (en) 2007-08-07
AU5905696A (en) 1996-12-24
WO1996039719A1 (en) 1996-12-12
KR19990022379A (ko) 1999-03-25
KR100444638B1 (ko) 2004-12-30
EP0834198B1 (de) 2002-03-27
GB9511336D0 (en) 1995-08-02
US6111266A (en) 2000-08-29
CA2219141A1 (en) 1996-12-12
JP4137999B2 (ja) 2008-08-20
GB2314684B (en) 1999-12-01
GB9721332D0 (en) 1997-12-10
EP0834198A1 (de) 1998-04-08
GB2314684A (en) 1998-01-07
JPH11507178A (ja) 1999-06-22

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Legal Events

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