DE69610758T2 - Piezoelektrisches/Elektrostriktives Element vom Dünnschicht-Typ und Verfahren zu seiner Herstellung - Google Patents

Piezoelektrisches/Elektrostriktives Element vom Dünnschicht-Typ und Verfahren zu seiner Herstellung

Info

Publication number: DE69610758T2
Authority: DE; Germany
Prior art keywords: piezoelectric; electrostrictive; layer; lower electrode; film element
Prior art date: 1995-12-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69610758T

Other languages

German (de)

English (en)

Other versions

DE69610758D1 (de

Inventor

Koji Kimura

Tsutomu Nanataki

Nobuo Takahashi

Yukihisa Takeuchi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NGK Insulators Ltd

Original Assignee

NGK Insulators Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-12-28

Filing date

1996-12-24

Publication date

2001-05-10

1996-12-24 Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd

2000-11-30 Application granted granted Critical

2000-11-30 Publication of DE69610758D1 publication Critical patent/DE69610758D1/de

2001-05-10 Publication of DE69610758T2 publication Critical patent/DE69610758T2/de

2016-12-25 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

238000004519 manufacturing process Methods 0.000 title claims description 34
239000010409 thin film Substances 0.000 title description 4
MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 188
239000000758 substrate Substances 0.000 claims description 98
CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 93
238000000034 method Methods 0.000 claims description 89
239000000395 magnesium oxide Substances 0.000 claims description 84
239000000463 material Substances 0.000 claims description 75
239000002245 particle Substances 0.000 claims description 74
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 72
AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 68
239000012528 membrane Substances 0.000 claims description 67
238000010304 firing Methods 0.000 claims description 63
150000001875 compounds Chemical class 0.000 claims description 45
230000002093 peripheral effect Effects 0.000 claims description 34
230000008569 process Effects 0.000 claims description 24
239000000203 mixture Substances 0.000 claims description 22
229910052596 spinel Inorganic materials 0.000 claims description 21
239000000919 ceramic Substances 0.000 claims description 19
239000011029 spinel Substances 0.000 claims description 19
239000007772 electrode material Substances 0.000 claims description 12
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
230000015572 biosynthetic process Effects 0.000 claims description 9
229910052749 magnesium Inorganic materials 0.000 claims description 9
239000011777 magnesium Substances 0.000 claims description 9
238000000926 separation method Methods 0.000 claims description 6
239000010408 film Substances 0.000 description 112
238000006073 displacement reaction Methods 0.000 description 31
239000006185 dispersion Substances 0.000 description 15
239000000843 powder Substances 0.000 description 13
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
125000006850 spacer group Chemical group 0.000 description 11
229910052782 aluminium Inorganic materials 0.000 description 10
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 9
ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 9
238000006243 chemical reaction Methods 0.000 description 8
238000010438 heat treatment Methods 0.000 description 8
230000009257 reactivity Effects 0.000 description 7
-1 spinel particles Chemical compound 0.000 description 7
239000013078 crystal Substances 0.000 description 6
230000004927 fusion Effects 0.000 description 6
229910052697 platinum Inorganic materials 0.000 description 6
239000002002 slurry Substances 0.000 description 6
238000001035 drying Methods 0.000 description 5
230000000694 effects Effects 0.000 description 5
HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 5
HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 5
238000007650 screen-printing Methods 0.000 description 5
239000000126 substance Substances 0.000 description 5
238000005452 bending Methods 0.000 description 4
230000005684 electric field Effects 0.000 description 4
230000001771 impaired effect Effects 0.000 description 4
RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
238000005245 sintering Methods 0.000 description 4
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
229910045601 alloy Inorganic materials 0.000 description 3
239000000956 alloy Substances 0.000 description 3
239000011248 coating agent Substances 0.000 description 3
238000000576 coating method Methods 0.000 description 3
239000004020 conductor Substances 0.000 description 3
CJXLIMFTIKVMQN-UHFFFAOYSA-N dimagnesium;oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Mg+2].[Mg+2].[Ta+5].[Ta+5] CJXLIMFTIKVMQN-UHFFFAOYSA-N 0.000 description 3
229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
238000002360 preparation method Methods 0.000 description 3
229920005989 resin Polymers 0.000 description 3
239000011347 resin Substances 0.000 description 3
238000004544 sputter deposition Methods 0.000 description 3
MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 2
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
229910026161 MgAl2O4 Inorganic materials 0.000 description 2
LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
230000001133 acceleration Effects 0.000 description 2
230000002411 adverse Effects 0.000 description 2
229910052787 antimony Inorganic materials 0.000 description 2
239000011230 binding agent Substances 0.000 description 2
BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 2
229910010293 ceramic material Inorganic materials 0.000 description 2
239000011651 chromium Substances 0.000 description 2
239000002131 composite material Substances 0.000 description 2
RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
235000014113 dietary fatty acids Nutrition 0.000 description 2
238000007598 dipping method Methods 0.000 description 2
239000002270 dispersing agent Substances 0.000 description 2
239000000194 fatty acid Substances 0.000 description 2
229930195729 fatty acid Natural products 0.000 description 2
238000000227 grinding Methods 0.000 description 2
238000009413 insulation Methods 0.000 description 2
238000007733 ion plating Methods 0.000 description 2
KFZMGEQAYNKOFK-UHFFFAOYSA-N isopropyl alcohol Natural products CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
229910052746 lanthanum Inorganic materials 0.000 description 2
WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
238000003754 machining Methods 0.000 description 2
229910052751 metal Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
239000012046 mixed solvent Substances 0.000 description 2
238000000465 moulding Methods 0.000 description 2
SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
229910052763 palladium Inorganic materials 0.000 description 2
230000035515 penetration Effects 0.000 description 2
239000004014 plasticizer Substances 0.000 description 2
238000007747 plating Methods 0.000 description 2
229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
230000004044 response Effects 0.000 description 2
230000035939 shock Effects 0.000 description 2
239000007787 solid Substances 0.000 description 2
238000005507 spraying Methods 0.000 description 2
239000004575 stone Substances 0.000 description 2
229910052712 strontium Inorganic materials 0.000 description 2
238000001771 vacuum deposition Methods 0.000 description 2
RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
229910052684 Cerium Inorganic materials 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 description 1
PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
229910001260 Pt alloy Inorganic materials 0.000 description 1
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
229920005822 acrylic binder Polymers 0.000 description 1
239000000654 additive Substances 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
229910052788 barium Inorganic materials 0.000 description 1
DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
229910052797 bismuth Inorganic materials 0.000 description 1
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
229910000416 bismuth oxide Inorganic materials 0.000 description 1
229910052793 cadmium Inorganic materials 0.000 description 1
BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
239000011195 cermet Substances 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
238000004581 coalescence Methods 0.000 description 1
229910017052 cobalt Inorganic materials 0.000 description 1
239000010941 cobalt Substances 0.000 description 1
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
238000004891 communication Methods 0.000 description 1
239000004567 concrete Substances 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
230000007423 decrease Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
230000005611 electricity Effects 0.000 description 1
238000011156 evaluation Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
238000011835 investigation Methods 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
230000001788 irregular Effects 0.000 description 1
125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
238000010030 laminating Methods 0.000 description 1
FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 description 1
239000007788 liquid Substances 0.000 description 1
229910052744 lithium Inorganic materials 0.000 description 1
229910052748 manganese Inorganic materials 0.000 description 1
239000011572 manganese Substances 0.000 description 1
WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000002844 melting Methods 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
229910052758 niobium Inorganic materials 0.000 description 1
239000010955 niobium Substances 0.000 description 1
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
229910000510 noble metal Inorganic materials 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
229910002077 partially stabilized zirconia Inorganic materials 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
230000010287 polarization Effects 0.000 description 1
230000002265 prevention Effects 0.000 description 1
229910052703 rhodium Inorganic materials 0.000 description 1
239000010948 rhodium Substances 0.000 description 1
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
239000006104 solid solution Substances 0.000 description 1
239000002904 solvent Substances 0.000 description 1
229910002076 stabilized zirconia Inorganic materials 0.000 description 1
229940071182 stannate Drugs 0.000 description 1
CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
229940116411 terpineol Drugs 0.000 description 1
238000009210 therapy by ultrasound Methods 0.000 description 1
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
239000008096 xylene Substances 0.000 description 1
229910052727 yttrium Inorganic materials 0.000 description 1
VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1
239000011701 zinc Substances 0.000 description 1
239000011787 zinc oxide Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
- H04R17/04—Gramophone pick-ups using a stylus; Recorders using a stylus
- H04R17/08—Gramophone pick-ups using a stylus; Recorders using a stylus signals being recorded or played back by vibration of a stylus in two orthogonal directions simultaneously
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Compositions Of Oxide Ceramics (AREA)
Piezo-Electric Transducers For Audible Bands (AREA)
Transducers For Ultrasonic Waves (AREA)

DE69610758T 1995-12-28 1996-12-24 Piezoelektrisches/Elektrostriktives Element vom Dünnschicht-Typ und Verfahren zu seiner Herstellung Expired - Lifetime DE69610758T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP34241495A JP3344888B2 (ja)	1995-12-28	1995-12-28	圧電／電歪膜型素子及びその製造方法

Publications (2)

Publication Number	Publication Date
DE69610758D1 DE69610758D1 (de)	2000-11-30
DE69610758T2 true DE69610758T2 (de)	2001-05-10

Family

ID=18353552

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69610758T Expired - Lifetime DE69610758T2 (de)	1995-12-28	1996-12-24	Piezoelektrisches/Elektrostriktives Element vom Dünnschicht-Typ und Verfahren zu seiner Herstellung

Country Status (4)

Country	Link
US (3)	US5814920A (ja)
EP (1)	EP0782203B1 (ja)
JP (1)	JP3344888B2 (ja)
DE (1)	DE69610758T2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE10019941A1 (de) *	2000-04-20	2001-10-25	Systec Pos Technology Gmbh	Verfahren und System zum Erfassen und Belohnen der Rückführung von Einkaufswagen
DE10234773A1 (de) *	2002-07-30	2004-02-12	Daimlerchrysler Ag	Einspritzsystem und Drucksensor für ein solches

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6004644A (en) *	1994-07-26	1999-12-21	Ngk Insulators, Ltd.	Zirconia diaphragm structure and piezoelectric/electrostrictive film element having the zirconia diaphragm structure
JP3267151B2 (ja) *	1996-04-12	2002-03-18	ミノルタ株式会社	圧電振動部材およびその製造方法
AU2712597A (en) *	1997-05-13	1998-12-08	Mitsubishi Denki Kabushiki Kaisha	Piezoelectric thin film device
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1996
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- 1996-12-24 DE DE69610758T patent/DE69610758T2/de not_active Expired - Lifetime
- 1996-12-24 EP EP19960309505 patent/EP0782203B1/en not_active Expired - Lifetime
1998
- 1998-04-09 US US09/057,398 patent/US6088893A/en not_active Expired - Lifetime
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Also Published As

Publication number	Publication date
EP0782203A2 (en)	1997-07-02
US6263552B1 (en)	2001-07-24
US5814920A (en)	1998-09-29
JP3344888B2 (ja)	2002-11-18
EP0782203B1 (en)	2000-10-25
EP0782203A3 (en)	1998-08-26
US6088893A (en)	2000-07-18
DE69610758D1 (de)	2000-11-30
JPH09186372A (ja)	1997-07-15

Publication	Publication Date	Title
DE69610758T2 (de)	2001-05-10	Piezoelektrisches/Elektrostriktives Element vom Dünnschicht-Typ und Verfahren zu seiner Herstellung
DE69510108T2 (de)	1999-11-25	Piezoelektrisches/elektrostriktives Dünnfilmelement mit convexem Membran und Verfahren zu seiner Herstellung
DE69607551T2 (de)	2000-11-02	Piezoeletrisches/elektrostriktives Dünnfilmelement und Herstellungsverfahren
DE69505430T2 (de)	1999-04-22	Piezoelektrisches/elektrostriktives Dünnfilmelement und Herstellungsverfahren
DE69519081T2 (de)	2001-05-10	Piezoelektrisches/elektrostriktives Dünnfilmelement mit einem Membran mit mindestens einem spannungsaufnemenden Gebiet am Rande
DE69311174T2 (de)	1997-10-30	Piezoelektrisches/elektrostriktives Element mit Hilfselektrode zwischen einer piezoelektrischen/elektrostriktiven Schicht und dem Substrat
DE69714909T2 (de)	2003-04-30	Piezoelektrisches Element des Dünnschichttyps
DE69223096T2 (de)	1998-05-28	Piezoelektrischer/elektrostriktiver Element mit einem keramischen Substrat aus stabilisiertem Zirkoniumdioxid
DE69408565T2 (de)	1998-08-06	Piezoelektrische Anordnung
DE69504548T2 (de)	1999-03-04	Verfahren zur Herstellung einer Membranstruktur aus Keramik mit einem konvexen Teil
DE69401855T2 (de)	1997-07-31	Piezoelektrische Anordnung
DE69401447T2 (de)	1997-05-28	Piezoelektrische Anordnung
DE60121849T2 (de)	2007-02-01	Piezoelektrische/elektrostriktive Film-Bauelemente sowie deren Herstellungsverfahren
DE69410861T2 (de)	1998-11-12	Piezoelektrisches/elektrostriktives Element mit Elektrodenfilmen mit einer bestimmten Oberflächenrauhigkeit
DE69106431T2 (de)	1995-08-10	Piezoelektrischer/elektrostriktiver Antrieb mit mindestens einer piezoelektrischen/elektrostriktiven Schicht.
DE69125762T2 (de)	1997-09-11	Piezoelektrisches/elektrostriktives Antriebselement mit keramischem Substrat
EP0894341B1 (de)	1999-11-10	Monolithischer vielschicht-piezoaktor und verfahren zur herstellung
DE69501629T2 (de)	1998-08-06	Membranstruktur aus Keramik und Verfahren zu ihrer Herstellung
DE69909546T2 (de)	2004-06-09	Piezoelektrisches/elektrostriktives Element
DE69513427T2 (de)	2000-05-04	Anzeigenelement und Anzeigevorrichtung
DE112013003809B4 (de)	2020-07-09	Piezoelektrische Vorrichtung, Piezoelektrisches Stellglied, Festplattenlaufwerk, Tintenstrahldrucker-Einrichtung und Piezoelektrischer Sensor
DE10062672A1 (de)	2001-08-02	Piezoelektrisches Bauelement
DE69022535T2 (de)	1996-03-21	Mehrschichtiger piezoelektrischer Verbund.
DE102007013874A1 (de)	2007-10-04	Mehrschichtiges piezoelektrisches Element
DE60034642T2 (de)	2008-01-31	Piezoelektrisches/elektrostriktives Bauelement und dessen Herstellungsverfahren

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2001-11-15	8364	No opposition during term of opposition

DE69610758T2 - Piezoelektrisches/Elektrostriktives Element vom Dünnschicht-Typ und Verfahren zu seiner Herstellung - Google Patents

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