DE69536084D1 - Halbleiterbauelement und Verfahren zu seiner Herstellung - Google Patents
Halbleiterbauelement und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69536084D1 DE69536084D1 DE69536084T DE69536084T DE69536084D1 DE 69536084 D1 DE69536084 D1 DE 69536084D1 DE 69536084 T DE69536084 T DE 69536084T DE 69536084 T DE69536084 T DE 69536084T DE 69536084 D1 DE69536084 D1 DE 69536084D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- semiconductor component
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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- H01L2924/191—Disposition
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/0959—Plated through-holes or plated blind vias filled with insulating material
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09672—Superposed layout, i.e. in different planes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP9215594 | 1994-04-28 | ||
JP7059562A JP3034180B2 (ja) | 1994-04-28 | 1995-03-17 | 半導体装置及びその製造方法及び基板 |
Publications (1)
Publication Number | Publication Date |
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DE69536084D1 true DE69536084D1 (de) | 2010-08-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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DE69536084T Expired - Lifetime DE69536084D1 (de) | 1994-04-28 | 1995-04-13 | Halbleiterbauelement und Verfahren zu seiner Herstellung |
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US (4) | US5729435A (de) |
EP (4) | EP0685878B1 (de) |
JP (1) | JP3034180B2 (de) |
KR (1) | KR100199437B1 (de) |
DE (1) | DE69536084D1 (de) |
TW (2) | TW559338U (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3034180B2 (ja) * | 1994-04-28 | 2000-04-17 | 富士通株式会社 | 半導体装置及びその製造方法及び基板 |
KR100386061B1 (ko) | 1995-10-24 | 2003-08-21 | 오끼 덴끼 고오교 가부시끼가이샤 | 크랙을방지하기위한개량된구조를가지는반도체장치및리이드프레임 |
US6734545B1 (en) * | 1995-11-29 | 2004-05-11 | Hitachi, Ltd. | BGA type semiconductor device and electronic equipment using the same |
DE19546045C1 (de) * | 1995-12-09 | 1997-05-22 | Bosch Gmbh Robert | Flip-Chip-Verfahren zur Herstellung eines Multichip-Moduls |
US6209665B1 (en) * | 1996-07-01 | 2001-04-03 | Ardis L. Holte | Reverse circulation drilling system with bit locked underreamer arms |
US5798557A (en) * | 1996-08-29 | 1998-08-25 | Harris Corporation | Lid wafer bond packaging and micromachining |
US6489668B1 (en) * | 1997-03-24 | 2002-12-03 | Seiko Epson Corporation | Semiconductor device and method for manufacturing the same |
US6317333B1 (en) * | 1997-08-28 | 2001-11-13 | Mitsubishi Denki Kabushiki Kaisha | Package construction of semiconductor device |
US5965944A (en) * | 1997-11-12 | 1999-10-12 | International Business Machines Corporation | Printed circuit boards for mounting a semiconductor integrated circuit die |
JP3579740B2 (ja) * | 1998-04-18 | 2004-10-20 | Tdk株式会社 | 電子部品の製造方法 |
US6049136A (en) * | 1998-06-03 | 2000-04-11 | Hewlett-Packard Company | Integrated circuit having unique lead configuration |
RU2134466C1 (ru) * | 1998-12-08 | 1999-08-10 | Таран Александр Иванович | Носитель кристалла ис |
JP3287408B2 (ja) * | 1999-06-16 | 2002-06-04 | 日本電気株式会社 | 半導体装置および半導体基板貫通導体の形成方法 |
JP2001077500A (ja) * | 1999-06-30 | 2001-03-23 | Murata Mfg Co Ltd | 電子部品、誘電体フィルタ、誘電体デュプレクサ、および電子部品の製造方法 |
DE10002852A1 (de) * | 2000-01-24 | 2001-08-02 | Infineon Technologies Ag | Abschirmeinrichtung und elektrisches Bauteil mit einer Abschirmeinrichtung |
US6465858B2 (en) * | 2000-03-24 | 2002-10-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device package for optical communication device |
US6506332B2 (en) * | 2000-05-31 | 2003-01-14 | Honeywell International Inc. | Filling method |
DE10196259T1 (de) * | 2000-05-31 | 2003-05-15 | Honeywell Int Inc | Füllverfahren |
DE10196262T1 (de) * | 2000-05-31 | 2003-05-15 | Honeywell Int Inc | Füllsystem |
US6855385B2 (en) * | 2000-05-31 | 2005-02-15 | Ttm Advanced Circuits, Inc. | PCB support plate for PCB via fill |
US6800232B2 (en) * | 2000-05-31 | 2004-10-05 | Ttm Advanced Circuits, Inc. | PCB support plate method for PCB via fill |
US6417563B1 (en) * | 2000-07-14 | 2002-07-09 | Advanced Micro Devices, Inc. | Spring frame for protecting packaged electronic devices |
US6653730B2 (en) * | 2000-12-14 | 2003-11-25 | Intel Corporation | Electronic assembly with high capacity thermal interface |
US20030009878A1 (en) * | 2001-07-12 | 2003-01-16 | John Gregory | Method for attaching an electronic component to a substrate |
US6927471B2 (en) | 2001-09-07 | 2005-08-09 | Peter C. Salmon | Electronic system modules and method of fabrication |
US7297572B2 (en) * | 2001-09-07 | 2007-11-20 | Hynix Semiconductor, Inc. | Fabrication method for electronic system modules |
US6495926B1 (en) * | 2001-11-29 | 2002-12-17 | Sun Microsystems, Inc. | 60 degree bump placement layout for an integrated circuit power grid |
KR100499003B1 (ko) * | 2002-12-12 | 2005-07-01 | 삼성전기주식회사 | 도금 인입선을 사용하지 않는 패키지 기판 및 그 제조 방법 |
US7035113B2 (en) * | 2003-01-30 | 2006-04-25 | Endicott Interconnect Technologies, Inc. | Multi-chip electronic package having laminate carrier and method of making same |
CA2455024A1 (en) * | 2003-01-30 | 2004-07-30 | Endicott Interconnect Technologies, Inc. | Stacked chip electronic package having laminate carrier and method of making same |
US7109573B2 (en) * | 2003-06-10 | 2006-09-19 | Nokia Corporation | Thermally enhanced component substrate |
FR2884047A1 (fr) * | 2005-03-31 | 2006-10-06 | Intexys Sa | Procede et dispositif d'encapsulation de composants electroniques et optoelectroniques |
JP4611010B2 (ja) * | 2004-12-10 | 2011-01-12 | 日立ビアメカニクス株式会社 | 多層回路基板の製造方法 |
TWI246760B (en) * | 2004-12-22 | 2006-01-01 | Siliconware Precision Industries Co Ltd | Heat dissipating semiconductor package and fabrication method thereof |
JP4860994B2 (ja) * | 2005-12-06 | 2012-01-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8181429B2 (en) * | 2005-12-21 | 2012-05-22 | Toyo Seikan Kaisha, Ltd. | Method of producing contents filed in a container |
US7607355B2 (en) * | 2007-02-16 | 2009-10-27 | Yamaha Corporation | Semiconductor device |
US7561430B2 (en) * | 2007-04-30 | 2009-07-14 | Watlow Electric Manufacturing Company | Heat management system for a power switching device |
US8426960B2 (en) * | 2007-12-21 | 2013-04-23 | Alpha & Omega Semiconductor, Inc. | Wafer level chip scale packaging |
JP4833307B2 (ja) * | 2009-02-24 | 2011-12-07 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体モジュール、端子板、端子板の製造方法および半導体モジュールの製造方法 |
KR100935854B1 (ko) | 2009-09-22 | 2010-01-08 | 테세라 리써치 엘엘씨 | 와이어 본딩 및 기준 와이어 본딩에 의해 제어되는 임피던스를 가진 마이크로전자 어셈블리 |
KR100950511B1 (ko) * | 2009-09-22 | 2010-03-30 | 테세라 리써치 엘엘씨 | 와이어 본딩 및 도전성 기준 소자에 의해 제어되는 임피던스를 포함하는 마이크로전자 어셈블리 |
US8618654B2 (en) * | 2010-07-20 | 2013-12-31 | Marvell World Trade Ltd. | Structures embedded within core material and methods of manufacturing thereof |
GB2481836B (en) * | 2010-07-08 | 2012-06-13 | Keymat Technology Ltd | Circuit board connector with drilling tamper detection arrangement |
US9136197B2 (en) | 2010-09-16 | 2015-09-15 | Tessera, Inc. | Impedence controlled packages with metal sheet or 2-layer RDL |
US8853708B2 (en) | 2010-09-16 | 2014-10-07 | Tessera, Inc. | Stacked multi-die packages with impedance control |
US8581377B2 (en) | 2010-09-16 | 2013-11-12 | Tessera, Inc. | TSOP with impedance control |
US8786083B2 (en) | 2010-09-16 | 2014-07-22 | Tessera, Inc. | Impedance controlled packages with metal sheet or 2-layer RDL |
US8847412B2 (en) * | 2012-11-09 | 2014-09-30 | Invensas Corporation | Microelectronic assembly with thermally and electrically conductive underfill |
KR101603285B1 (ko) | 2014-03-24 | 2016-03-14 | 대남환경 주식회사 | 해상 오일 방제선 |
CN107949188A (zh) * | 2017-11-16 | 2018-04-20 | 广东兴达鸿业电子有限公司 | 具有npth连孔的电路板加工方法 |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4050756A (en) * | 1975-12-22 | 1977-09-27 | International Telephone And Telegraph Corporation | Conductive elastomer connector and method of making same |
US4218701A (en) * | 1978-07-24 | 1980-08-19 | Citizen Watch Co., Ltd. | Package for an integrated circuit having a container with support bars |
US4322778A (en) * | 1980-01-25 | 1982-03-30 | International Business Machines Corp. | High performance semiconductor package assembly |
US4483067A (en) * | 1981-09-11 | 1984-11-20 | U.S. Philips Corporation | Method of manufacturing an identification card and an identification manufactured, for example, by this method |
JPS58220451A (ja) * | 1982-06-17 | 1983-12-22 | Kyodo Printing Co Ltd | Icモジユ−ル |
JPS5999752A (ja) * | 1982-11-29 | 1984-06-08 | Toshiba Corp | 混成集積回路装置 |
JPS60134446A (ja) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | 半導体装置 |
FR2575331B1 (fr) * | 1984-12-21 | 1987-06-05 | Labo Electronique Physique | Boitier pour composant electronique |
FR2584235B1 (fr) * | 1985-06-26 | 1988-04-22 | Bull Sa | Procede de montage d'un circuit integre sur un support, dispositif en resultant et son application a une carte a microcircuits electroniques |
DE3685647T2 (de) * | 1985-07-16 | 1993-01-07 | Nippon Telegraph & Telephone | Verbindungskontakte zwischen substraten und verfahren zur herstellung derselben. |
JPS6253000A (ja) * | 1985-08-31 | 1987-03-07 | 日本電気株式会社 | 半導体の実装構造 |
JPS62136865A (ja) * | 1985-12-11 | 1987-06-19 | Hitachi Ltd | モジユ−ル実装構造 |
US4843067A (en) * | 1986-11-19 | 1989-06-27 | Yaguang Liu | Polysaccharide containing pharmaceutical composition for increasing the immune function |
US5138438A (en) * | 1987-06-24 | 1992-08-11 | Akita Electronics Co. Ltd. | Lead connections means for stacked tab packaged IC chips |
US4978639A (en) * | 1989-01-10 | 1990-12-18 | Avantek, Inc. | Method for the simultaneous formation of via-holes and wraparound plating on semiconductor chips |
US4954313A (en) * | 1989-02-03 | 1990-09-04 | Amdahl Corporation | Method and apparatus for filling high density vias |
EP0382203B1 (de) * | 1989-02-10 | 1995-04-26 | Fujitsu Limited | Keramische Packung vom Halbleiteranordnungstyp und Verfahren zum Zusammensetzen derselben |
US4922376A (en) * | 1989-04-10 | 1990-05-01 | Unistructure, Inc. | Spring grid array interconnection for active microelectronic elements |
US4954878A (en) * | 1989-06-29 | 1990-09-04 | Digital Equipment Corp. | Method of packaging and powering integrated circuit chips and the chip assembly formed thereby |
JPH0344957A (ja) * | 1989-07-12 | 1991-02-26 | Fujitsu Ltd | 半導体チップ実装用セラミック基板の製造方法 |
US5200362A (en) * | 1989-09-06 | 1993-04-06 | Motorola, Inc. | Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film |
US4978638A (en) * | 1989-12-21 | 1990-12-18 | International Business Machines Corporation | Method for attaching heat sink to plastic packaged electronic component |
DE3943087C1 (de) * | 1989-12-27 | 1990-11-29 | Erhard 6900 Heidelberg De Lamberti | |
NO900229D0 (no) | 1990-01-16 | 1990-01-16 | Micro Electronics Ame A S | Fremgangsmaate for fremstilling av miniatyrisert impedanstilpasset ledningsnett. |
US5073814A (en) * | 1990-07-02 | 1991-12-17 | General Electric Company | Multi-sublayer dielectric layers |
JP3057766B2 (ja) * | 1990-12-18 | 2000-07-04 | 日本ケミコン株式会社 | 厚膜多層回路基板及びその製造方法 |
US5166772A (en) | 1991-02-22 | 1992-11-24 | Motorola, Inc. | Transfer molded semiconductor device package with integral shield |
JPH04276631A (ja) * | 1991-03-04 | 1992-10-01 | Toshiba Corp | 電界効果トランジスタの製造方法 |
JP2966972B2 (ja) * | 1991-07-05 | 1999-10-25 | 株式会社日立製作所 | 半導体チップキャリアとそれを実装したモジュール及びそれを組み込んだ電子機器 |
JP2936819B2 (ja) * | 1991-07-24 | 1999-08-23 | 日本電気株式会社 | Icチップの実装構造 |
JPH0541471A (ja) * | 1991-08-07 | 1993-02-19 | Hitachi Ltd | 半導体集積回路装置 |
JP2634516B2 (ja) * | 1991-10-15 | 1997-07-30 | 三菱電機株式会社 | 反転型icの製造方法、反転型ic、icモジュール |
JP2712967B2 (ja) * | 1991-12-19 | 1998-02-16 | 日本電気株式会社 | 半導体装置 |
CA2089435C (en) * | 1992-02-14 | 1997-12-09 | Kenzi Kobayashi | Semiconductor device |
JPH05326631A (ja) * | 1992-05-15 | 1993-12-10 | Rohm Co Ltd | 半導体装置の実装構造 |
US5639990A (en) * | 1992-06-05 | 1997-06-17 | Mitsui Toatsu Chemicals, Inc. | Solid printed substrate and electronic circuit package using the same |
US5280413A (en) * | 1992-09-17 | 1994-01-18 | Ceridian Corporation | Hermetically sealed circuit modules having conductive cap anchors |
US5450290A (en) * | 1993-02-01 | 1995-09-12 | International Business Machines Corporation | Printed circuit board with aligned connections and method of making same |
US5703405A (en) * | 1993-03-15 | 1997-12-30 | Motorola, Inc. | Integrated circuit chip formed from processing two opposing surfaces of a wafer |
JP3034180B2 (ja) * | 1994-04-28 | 2000-04-17 | 富士通株式会社 | 半導体装置及びその製造方法及び基板 |
JPH09326142A (ja) * | 1996-06-05 | 1997-12-16 | Matsushita Electric Ind Co Ltd | 電子機器の画面操作装置 |
-
1995
- 1995-03-17 JP JP7059562A patent/JP3034180B2/ja not_active Expired - Lifetime
- 1995-04-13 EP EP95105640A patent/EP0685878B1/de not_active Expired - Lifetime
- 1995-04-13 DE DE69536084T patent/DE69536084D1/de not_active Expired - Lifetime
- 1995-04-13 EP EP06116868A patent/EP1715512A3/de not_active Withdrawn
- 1995-04-13 EP EP99101351A patent/EP0915504A1/de not_active Ceased
- 1995-04-13 EP EP01129844A patent/EP1198000A1/de not_active Withdrawn
- 1995-04-25 KR KR1019950009706A patent/KR100199437B1/ko not_active IP Right Cessation
- 1995-04-28 TW TW091212186U patent/TW559338U/zh not_active IP Right Cessation
- 1995-04-28 TW TW092209806U patent/TW563902U/zh not_active IP Right Cessation
-
1997
- 1997-01-13 US US08/782,381 patent/US5729435A/en not_active Expired - Lifetime
- 1997-09-08 US US08/924,958 patent/US5978222A/en not_active Expired - Lifetime
-
1998
- 1998-11-18 US US09/195,232 patent/US6088233A/en not_active Expired - Fee Related
-
2000
- 2000-02-18 US US09/506,733 patent/US6184133B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100199437B1 (ko) | 1999-06-15 |
EP0685878A3 (de) | 1996-11-06 |
US5978222A (en) | 1999-11-02 |
KR950030321A (ko) | 1995-11-24 |
US6088233A (en) | 2000-07-11 |
EP1715512A3 (de) | 2013-02-13 |
JPH0817964A (ja) | 1996-01-19 |
EP0915504A1 (de) | 1999-05-12 |
EP1198000A1 (de) | 2002-04-17 |
EP0685878B1 (de) | 2010-06-23 |
EP0685878A2 (de) | 1995-12-06 |
EP1715512A2 (de) | 2006-10-25 |
US5729435A (en) | 1998-03-17 |
US6184133B1 (en) | 2001-02-06 |
TW559338U (en) | 2003-10-21 |
TW563902U (en) | 2003-11-21 |
JP3034180B2 (ja) | 2000-04-17 |
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Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP |