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DE69529493D1 - Anzeigevorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Anzeigevorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69529493D1
DE69529493D1 DE69529493T DE69529493T DE69529493D1 DE 69529493 D1 DE69529493 D1 DE 69529493D1 DE 69529493 T DE69529493 T DE 69529493T DE 69529493 T DE69529493 T DE 69529493T DE 69529493 D1 DE69529493 D1 DE 69529493D1
Authority
DE
Germany
Prior art keywords
manufacture
display device
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69529493T
Other languages
English (en)
Other versions
DE69529493T2 (de
Inventor
Takanori Watanabe
Mamoru Miyawaki
Shunsuke Inoue
Tetsunobu Kochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13731994A external-priority patent/JP3155886B2/ja
Priority claimed from JP13732094A external-priority patent/JP3109956B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69529493D1 publication Critical patent/DE69529493D1/de
Publication of DE69529493T2 publication Critical patent/DE69529493T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G02F1/136281—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon having a transmissive semiconductor substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
DE69529493T 1994-06-20 1995-06-19 Anzeigevorrichtung und Verfahren zu ihrer Herstellung Expired - Fee Related DE69529493T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13731994A JP3155886B2 (ja) 1994-06-20 1994-06-20 表示装置及びその製造法
JP13732194 1994-06-20
JP13732094A JP3109956B2 (ja) 1994-06-20 1994-06-20 表示装置

Publications (2)

Publication Number Publication Date
DE69529493D1 true DE69529493D1 (de) 2003-03-06
DE69529493T2 DE69529493T2 (de) 2003-10-30

Family

ID=27317449

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69529493T Expired - Fee Related DE69529493T2 (de) 1994-06-20 1995-06-19 Anzeigevorrichtung und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (1) US5815223A (de)
EP (1) EP0689085B1 (de)
KR (1) KR100214097B1 (de)
DE (1) DE69529493T2 (de)

Families Citing this family (70)

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US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
KR100271222B1 (ko) * 1995-12-14 2000-12-01 오카베 히로무 반도체 소자 및 그 제조 방법
TW309633B (de) 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
JP3565983B2 (ja) * 1996-04-12 2004-09-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3219685B2 (ja) 1996-06-04 2001-10-15 キヤノン株式会社 液晶表示装置およびその製造方法
JPH1054999A (ja) * 1996-06-04 1998-02-24 Canon Inc 表示装置とその製造法
JP3571887B2 (ja) * 1996-10-18 2004-09-29 キヤノン株式会社 アクティブマトリクス基板及び液晶装置
CN100399135C (zh) 1996-10-22 2008-07-02 精工爱普生株式会社 液晶用基板和液晶面板
US7872728B1 (en) 1996-10-22 2011-01-18 Seiko Epson Corporation Liquid crystal panel substrate, liquid crystal panel, and electronic device and projection display device using the same
WO1998018044A1 (en) 1996-10-22 1998-04-30 Seiko Epson Corporation Active matrix liquid crystal panel
JP3392672B2 (ja) * 1996-11-29 2003-03-31 三洋電機株式会社 表示装置
JP3782195B2 (ja) * 1997-03-10 2006-06-07 株式会社東芝 アクティブマトリクス型液晶表示素子及びその製造方法
KR100253261B1 (ko) * 1997-06-03 2000-04-15 김영환 박막트랜지스터 및 그 제조방법
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JP3897873B2 (ja) * 1997-09-11 2007-03-28 株式会社半導体エネルギー研究所 液晶表示装置の駆動回路
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US6677613B1 (en) * 1999-03-03 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
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US6680487B1 (en) 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
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TW459275B (en) 1999-07-06 2001-10-11 Semiconductor Energy Lab Semiconductor device and method of fabricating the same
US6876145B1 (en) * 1999-09-30 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Organic electroluminescent display device
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KR100385082B1 (ko) * 2000-07-27 2003-05-22 삼성전자주식회사 액정 표시 장치
TW503584B (en) * 2000-09-29 2002-09-21 Matsushita Electric Ind Co Ltd Thin film transistor, liquid crystal display device comprising it, and electroluminescence display device
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JP4002410B2 (ja) * 2001-06-22 2007-10-31 日本電気株式会社 アクティブマトリックス型液晶表示装置の製造方法
TW564471B (en) 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP3678180B2 (ja) * 2001-07-27 2005-08-03 株式会社デンソー フローセンサ
US7351300B2 (en) 2001-08-22 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
TW594947B (en) * 2001-10-30 2004-06-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP2003297718A (ja) * 2002-03-29 2003-10-17 Seiko Epson Corp 微細孔形成方法、半導体装置の製造方法、半導体装置、表示装置、および電子機器
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JP2004172389A (ja) 2002-11-20 2004-06-17 Renesas Technology Corp 半導体装置およびその製造方法
TWI330269B (en) * 2002-12-27 2010-09-11 Semiconductor Energy Lab Separating method
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
JP4700268B2 (ja) * 2003-09-19 2011-06-15 セイコーエプソン株式会社 半導体装置および半導体装置の製造方法
JP4791974B2 (ja) * 2004-01-05 2011-10-12 ティーピーオー ホンコン ホールディング リミテッド Ｅｓｄ保護回路を有する液晶表示装置及びその製造方法
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JP4319078B2 (ja) * 2004-03-26 2009-08-26 シャープ株式会社 半導体装置の製造方法
US7554265B2 (en) * 2004-06-25 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
CN100592520C (zh) * 2004-10-22 2010-02-24 株式会社半导体能源研究所 半导体器件及包括其的显示装置
JP4902362B2 (ja) * 2005-01-12 2012-03-21 シャープ株式会社 半導体装置の製造方法
KR20070002933A (ko) * 2005-06-30 2007-01-05 엘지.필립스 엘시디 주식회사 폴리 박막 트랜지스터 기판 및 그 제조 방법
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KR20150120376A (ko) 2013-02-20 2015-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 반도체 장치, 및 박리 장치
CN105793957B (zh) 2013-12-12 2019-05-03 株式会社半导体能源研究所 剥离方法及剥离装置
CN105679763A (zh) * 2016-01-05 2016-06-15 深圳市华星光电技术有限公司 一种阵列基板及其制作方法、显示面板
CN105655353A (zh) * 2016-01-21 2016-06-08 武汉华星光电技术有限公司 Tft阵列基板结构及其制作方法
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CN112002708B (zh) * 2020-08-11 2023-04-07 深圳市华星光电半导体显示技术有限公司 阵列基板

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Also Published As

Publication number Publication date
EP0689085A3 (de) 1997-01-08
DE69529493T2 (de) 2003-10-30
KR100214097B1 (ko) 1999-08-02
EP0689085B1 (de) 2003-01-29
US5815223A (en) 1998-09-29
EP0689085A2 (de) 1995-12-27

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