[go: up one dir, main page]

DE69517539D1 - Halbleiterstruktur mit virtuellem Beugungsgitter - Google Patents

Halbleiterstruktur mit virtuellem Beugungsgitter

Info

Publication number
DE69517539D1
DE69517539D1 DE69517539T DE69517539T DE69517539D1 DE 69517539 D1 DE69517539 D1 DE 69517539D1 DE 69517539 T DE69517539 T DE 69517539T DE 69517539 T DE69517539 T DE 69517539T DE 69517539 D1 DE69517539 D1 DE 69517539D1
Authority
DE
Germany
Prior art keywords
diffraction grating
semiconductor structure
virtual diffraction
virtual
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69517539T
Other languages
English (en)
Other versions
DE69517539T2 (de
Inventor
Christophe Kazmierski
Didier Robein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Publication of DE69517539D1 publication Critical patent/DE69517539D1/de
Application granted granted Critical
Publication of DE69517539T2 publication Critical patent/DE69517539T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/30—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 grating
    • G02F2201/305—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 grating diffraction grating
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/30—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 grating
    • G02F2201/307—Reflective grating, i.e. Bragg grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
DE69517539T 1994-01-20 1995-01-18 Halbleiterstruktur mit virtuellem Beugungsgitter Expired - Fee Related DE69517539T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9400587A FR2715251B1 (fr) 1994-01-20 1994-01-20 Structure semiconductrice à réseau de diffraction virtuel.

Publications (2)

Publication Number Publication Date
DE69517539D1 true DE69517539D1 (de) 2000-07-27
DE69517539T2 DE69517539T2 (de) 2001-03-08

Family

ID=9459211

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517539T Expired - Fee Related DE69517539T2 (de) 1994-01-20 1995-01-18 Halbleiterstruktur mit virtuellem Beugungsgitter

Country Status (4)

Country Link
US (1) US5821570A (de)
EP (1) EP0664588B1 (de)
DE (1) DE69517539T2 (de)
FR (1) FR2715251B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072812A (en) * 1997-08-01 2000-06-06 Lucent Technologies Inc. Distributed feedback laser with loss coupling
US6477194B1 (en) * 1999-11-15 2002-11-05 Agere Systems Guardian Corp. Low temperature distributed feedback laser with loss grating and method
GB2367142B (en) 2000-08-11 2003-02-12 Bookham Technology Plc An electro optic device
JP5143985B2 (ja) * 2001-08-10 2013-02-13 古河電気工業株式会社 分布帰還型半導体レーザ素子
JP2003234541A (ja) * 2001-12-07 2003-08-22 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子
US9153940B2 (en) 2013-11-26 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Electro-optic modulator device and method of making the same
US11133649B2 (en) * 2019-06-21 2021-09-28 Palo Alto Research Center Incorporated Index and gain coupled distributed feedback laser
CN111769437B (zh) * 2020-07-21 2021-09-21 厦门市三安集成电路有限公司 布拉格光栅及其制备方法、分布反馈激光器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3814498A (en) * 1972-05-04 1974-06-04 Bell Telephone Labor Inc Integrated optical circuit devices employing optical gratings
US4445218A (en) * 1981-09-28 1984-04-24 Bell Telephone Laboratories, Incorporated Semiconductor laser with conductive current mask
JPS58196088A (ja) * 1982-05-12 1983-11-15 Hitachi Ltd 半導体レ−ザ素子
JPS5931088A (ja) * 1982-08-14 1984-02-18 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS59226320A (ja) * 1983-06-06 1984-12-19 Matsushita Electric Ind Co Ltd 半導体回折格子
JPS60247986A (ja) * 1984-05-23 1985-12-07 Fujitsu Ltd 分布帰還型半導体レ−ザ
JPS6114787A (ja) * 1984-06-29 1986-01-22 Nec Corp 分布帰還型半導体レ−ザ
JPS61191093A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 半導体装置
JPS6373585A (ja) * 1986-09-16 1988-04-04 Nec Corp 周波数可変分布ブラツグ反射型半導体レ−ザ
JP2825508B2 (ja) * 1987-10-09 1998-11-18 株式会社日立製作所 半導体レーザ装置および光通信システム
JPH01124279A (ja) * 1987-11-09 1989-05-17 Matsushita Electric Ind Co Ltd 分布帰還型レーザ
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
US4932032A (en) * 1989-08-03 1990-06-05 At&T Bell Laboratories Tapered semiconductor waveguides
JP2705409B2 (ja) * 1991-11-21 1998-01-28 三菱電機株式会社 半導体分布帰還形レーザ装置
US5295150A (en) * 1992-12-11 1994-03-15 Eastman Kodak Company Distributed feedback-channeled substrate planar semiconductor laser
US5319666A (en) * 1993-04-07 1994-06-07 At&T Bell Laboratories Article comprising a distributed feedback laser

Also Published As

Publication number Publication date
DE69517539T2 (de) 2001-03-08
EP0664588B1 (de) 2000-06-21
US5821570A (en) 1998-10-13
EP0664588A1 (de) 1995-07-26
FR2715251A1 (fr) 1995-07-21
FR2715251B1 (fr) 1996-04-05

Similar Documents

Publication Publication Date Title
FI963100L (fi) Uhkapeli
DE69513156D1 (de) Kovalent gebundener überzug
DE68928711D1 (de) Beugungsgitter
DE69517539D1 (de) Halbleiterstruktur mit virtuellem Beugungsgitter
FI953627L (fi) Kansi
DK146094A (da) Disproportionering
DE69330140D1 (de) Abdeckungselement
DE69509461D1 (de) Tag-Nacht Episkop
FR2725231B1 (fr) Cadenas
KR960019739U (ko) 구두굽 보관용 케이스
KR950026264U (ko) 세절기
FI950657A0 (fi) Jyrsin
KR960000238U (ko) 휴대용 케이스
FI946062A0 (fi) Foerfarande foer anvaendning av biomassaoljor i en dieselmotor
KR960016061U (ko) 회절단기
KR950023413U (ko) 논뚝 커버
KR960016427U (ko) 홀로그램 팽이
DE69312266D1 (de) Beugungsgitter
KR950010252U (ko) 전기제품용 콘센트 구조
KR960003547U (ko) 방열판 구조
SE9402601D0 (sv) Sammankopplingselement
KR960022368U (ko) 상자 구조
KR960010230U (ko) 제절기
KR950028567U (ko) 리드프레임의 구조
KR950028291U (ko) 서모스탯 구조

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT,

8339 Ceased/non-payment of the annual fee