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DE69510138D1 - Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung - Google Patents

Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung

Info

Publication number
DE69510138D1
DE69510138D1 DE69510138T DE69510138T DE69510138D1 DE 69510138 D1 DE69510138 D1 DE 69510138D1 DE 69510138 T DE69510138 T DE 69510138T DE 69510138 T DE69510138 T DE 69510138T DE 69510138 D1 DE69510138 D1 DE 69510138D1
Authority
DE
Germany
Prior art keywords
vapor deposition
chemical vapor
chemical
deposition
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69510138T
Other languages
English (en)
Other versions
DE69510138T2 (de
Inventor
Hitoshi Habuka
Masanori Mayuzumi
Naoto Tate
Masatake Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69510138D1 publication Critical patent/DE69510138D1/de
Application granted granted Critical
Publication of DE69510138T2 publication Critical patent/DE69510138T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DE69510138T 1994-07-15 1995-07-11 Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung Expired - Fee Related DE69510138T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6186460A JP3008782B2 (ja) 1994-07-15 1994-07-15 気相成長方法およびその装置

Publications (2)

Publication Number Publication Date
DE69510138D1 true DE69510138D1 (de) 1999-07-15
DE69510138T2 DE69510138T2 (de) 1999-11-18

Family

ID=16188858

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510138T Expired - Fee Related DE69510138T2 (de) 1994-07-15 1995-07-11 Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung

Country Status (4)

Country Link
US (2) US5749974A (de)
EP (1) EP0696653B1 (de)
JP (1) JP3008782B2 (de)
DE (1) DE69510138T2 (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3008782B2 (ja) 1994-07-15 2000-02-14 信越半導体株式会社 気相成長方法およびその装置
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
JPH11238688A (ja) * 1998-02-23 1999-08-31 Shin Etsu Handotai Co Ltd 薄膜の製造方法
JP3713380B2 (ja) * 1998-03-04 2005-11-09 株式会社東芝 薄膜の形成方法および装置
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
FR2786208B1 (fr) * 1998-11-25 2001-02-09 Centre Nat Rech Scient Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre
DE19907749A1 (de) 1999-02-23 2000-08-24 Kennametal Inc Gesinterter Hartmetallkörper und dessen Verwendung
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6551399B1 (en) 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6551929B1 (en) * 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6617173B1 (en) 2000-10-11 2003-09-09 Genus, Inc. Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition
US20030190424A1 (en) * 2000-10-20 2003-10-09 Ofer Sneh Process for tungsten silicide atomic layer deposition
US6825447B2 (en) * 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US20020083897A1 (en) * 2000-12-29 2002-07-04 Applied Materials, Inc. Full glass substrate deposition in plasma enhanced chemical vapor deposition
US6765178B2 (en) * 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7163587B2 (en) * 2002-02-08 2007-01-16 Axcelis Technologies, Inc. Reactor assembly and processing method
US6827978B2 (en) * 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) * 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US20030194825A1 (en) * 2002-04-10 2003-10-16 Kam Law Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US6869838B2 (en) * 2002-04-09 2005-03-22 Applied Materials, Inc. Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7524532B2 (en) * 2002-04-22 2009-04-28 Aixtron Ag Process for depositing thin layers on a substrate in a process chamber of adjustable height
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7211508B2 (en) 2003-06-18 2007-05-01 Applied Materials, Inc. Atomic layer deposition of tantalum based barrier materials
JP5179179B2 (ja) 2004-06-28 2013-04-10 ケンブリッジ ナノテック インコーポレイテッド 蒸着システムおよび蒸着方法
WO2007038307A2 (en) * 2005-09-23 2007-04-05 Clemson University Convective flow chemical vapor deposition growth of nanostructures
US7976898B2 (en) * 2006-09-20 2011-07-12 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
JP4845752B2 (ja) * 2007-01-25 2011-12-28 日立造船株式会社 カーボンナノチューブの製造装置
US7834526B2 (en) 2007-04-10 2010-11-16 Seiko Epson Corporation Contour resonator
JP5060324B2 (ja) * 2008-01-31 2012-10-31 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び処理容器
CN105331951A (zh) * 2014-06-05 2016-02-17 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室及半导体加工设备
DE102016101003A1 (de) 2016-01-21 2017-07-27 Aixtron Se CVD-Vorrichtung mit einem als Baugruppe aus dem Reaktorgehäuse entnehmbaren Prozesskammergehäuse
CN115613139B (zh) * 2022-12-01 2023-04-14 浙江晶越半导体有限公司 用于外延生长碳化硅薄膜的化学气相沉积反应器及方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3338209A (en) * 1965-10-23 1967-08-29 Sperry Rand Corp Epitaxial deposition apparatus
US3805736A (en) * 1971-12-27 1974-04-23 Ibm Apparatus for diffusion limited mass transport
JPS573968A (en) * 1980-06-11 1982-01-09 Hasegawa Komuten Kk H beam brace
JPS59928A (ja) * 1982-06-25 1984-01-06 Ushio Inc 光加熱装置
US4689247A (en) * 1986-05-15 1987-08-25 Ametek, Inc. Process and apparatus for forming thin films
US4846102A (en) * 1987-06-24 1989-07-11 Epsilon Technology, Inc. Reaction chambers for CVD systems
US5261960A (en) * 1987-06-24 1993-11-16 Epsilon Technology, Inc. Reaction chambers for CVD systems
US5244694A (en) * 1987-06-24 1993-09-14 Advanced Semiconductor Materials America, Inc. Apparatus for improving the reactant gas flow in a reaction chamber
US5044315A (en) * 1987-06-24 1991-09-03 Epsilon Technology, Inc. Apparatus for improving the reactant gas flow in a reaction chamber
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US5194401A (en) * 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
WO1991003075A1 (en) * 1989-08-21 1991-03-07 Fsi International, Inc. Gas substrate processing module
US5077875A (en) * 1990-01-31 1992-01-07 Raytheon Company Reactor vessel for the growth of heterojunction devices
FR2661554A1 (fr) * 1990-04-30 1991-10-31 Philips Electronique Lab Dispositif d'introduction des gaz dans la chambre d'un reacteur d'epitaxie, chambre de reacteur comportant un tel dispositif d'introduction de gaz, et utilisation d'une telle chambre pour la realisation de couches semiconductrices.
US5085887A (en) * 1990-09-07 1992-02-04 Applied Materials, Inc. Wafer reactor vessel window with pressure-thermal compensation
JPH05243166A (ja) * 1992-02-26 1993-09-21 Nec Corp 半導体基板の気相成長装置
JP3131005B2 (ja) * 1992-03-06 2001-01-31 パイオニア株式会社 化合物半導体気相成長装置
US5455069A (en) * 1992-06-01 1995-10-03 Motorola, Inc. Method of improving layer uniformity in a CVD reactor
DE69331659T2 (de) * 1993-01-13 2002-09-12 Applied Materials Inc Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung
JP2875458B2 (ja) * 1993-07-16 1999-03-31 大日本スクリーン製造株式会社 基板の熱処理装置
JP3008782B2 (ja) 1994-07-15 2000-02-14 信越半導体株式会社 気相成長方法およびその装置
US5685906A (en) 1995-03-23 1997-11-11 Seh America, Inc. Method and apparatus for configuring an epitaxial reactor for reduced set-up time and improved layer quality

Also Published As

Publication number Publication date
US5749974A (en) 1998-05-12
JP3008782B2 (ja) 2000-02-14
US6254933B1 (en) 2001-07-03
JPH0831758A (ja) 1996-02-02
EP0696653A1 (de) 1996-02-14
EP0696653B1 (de) 1999-06-09
DE69510138T2 (de) 1999-11-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee