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DE69432111D1 - Bipolartransistor mit isoliertem Gate - Google Patents

Bipolartransistor mit isoliertem Gate

Info

Publication number
DE69432111D1
DE69432111D1 DE69432111T DE69432111T DE69432111D1 DE 69432111 D1 DE69432111 D1 DE 69432111D1 DE 69432111 T DE69432111 T DE 69432111T DE 69432111 T DE69432111 T DE 69432111T DE 69432111 D1 DE69432111 D1 DE 69432111D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
insulated gate
gate bipolar
insulated
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69432111T
Other languages
English (en)
Other versions
DE69432111T2 (de
Inventor
Naoto Okabe
Naohito Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of DE69432111D1 publication Critical patent/DE69432111D1/de
Application granted granted Critical
Publication of DE69432111T2 publication Critical patent/DE69432111T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
DE69432111T 1993-04-02 1994-03-31 Bipolartransistor mit isoliertem Gate Expired - Lifetime DE69432111T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07675993A JP3216315B2 (ja) 1993-04-02 1993-04-02 絶縁ゲート型バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
DE69432111D1 true DE69432111D1 (de) 2003-03-20
DE69432111T2 DE69432111T2 (de) 2003-12-04

Family

ID=13614522

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69432111T Expired - Lifetime DE69432111T2 (de) 1993-04-02 1994-03-31 Bipolartransistor mit isoliertem Gate

Country Status (3)

Country Link
EP (1) EP0622853B1 (de)
JP (1) JP3216315B2 (de)
DE (1) DE69432111T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3918209B2 (ja) 1996-09-11 2007-05-23 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ及びその製造方法
US6054752A (en) * 1997-06-30 2000-04-25 Denso Corporation Semiconductor device
US7301220B2 (en) * 2005-05-20 2007-11-27 Cambridge Semiconductor Limited Semiconductor device and method of forming a semiconductor device
CN102779840B (zh) * 2012-07-18 2014-10-15 电子科技大学 一种具有终端深能级杂质层的igbt

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043862A (ja) * 1983-08-22 1985-03-08 Hitachi Ltd 高耐圧絶縁ゲ−ト形半導体装置
DE3478539D1 (en) * 1984-03-30 1989-07-06 Siemens Ag Semiconductor device controlled by field effect
EP0293846A1 (de) * 1987-06-05 1988-12-07 Siemens Aktiengesellschaft MIS-Leistunsgstransistor
JPH0354868A (ja) * 1989-07-21 1991-03-08 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
JP2701502B2 (ja) * 1990-01-25 1998-01-21 日産自動車株式会社 半導体装置
JPH04274368A (ja) * 1991-03-01 1992-09-30 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JP2862027B2 (ja) * 1991-03-12 1999-02-24 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ

Also Published As

Publication number Publication date
EP0622853B1 (de) 2003-02-12
DE69432111T2 (de) 2003-12-04
EP0622853A1 (de) 1994-11-02
JP3216315B2 (ja) 2001-10-09
JPH06291320A (ja) 1994-10-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)