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DE69511726D1 - Halbleiteranordnung mit isoliertem gate - Google Patents

Halbleiteranordnung mit isoliertem gate

Info

Publication number
DE69511726D1
DE69511726D1 DE69511726T DE69511726T DE69511726D1 DE 69511726 D1 DE69511726 D1 DE 69511726D1 DE 69511726 T DE69511726 T DE 69511726T DE 69511726 T DE69511726 T DE 69511726T DE 69511726 D1 DE69511726 D1 DE 69511726D1
Authority
DE
Germany
Prior art keywords
insulated gate
semiconductor arrangement
semiconductor
arrangement
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69511726T
Other languages
English (en)
Other versions
DE69511726T2 (de
Inventor
Christopher Harris
Erik Janzen
Andrei Konstantinov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Research Ltd Switzerland
Original Assignee
ABB Research Ltd Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB Research Ltd Switzerland filed Critical ABB Research Ltd Switzerland
Application granted granted Critical
Publication of DE69511726D1 publication Critical patent/DE69511726D1/de
Publication of DE69511726T2 publication Critical patent/DE69511726T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
DE69511726T 1994-12-22 1995-12-20 Halbleiteranordnung mit isoliertem gate Expired - Fee Related DE69511726T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9404452A SE9404452D0 (sv) 1994-12-22 1994-12-22 Semiconductor device having an insulated gate
PCT/SE1995/001551 WO1996019834A2 (en) 1994-12-22 1995-12-20 Semiconductor device having an insulated gate

Publications (2)

Publication Number Publication Date
DE69511726D1 true DE69511726D1 (de) 1999-09-30
DE69511726T2 DE69511726T2 (de) 1999-12-16

Family

ID=20396419

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69511726T Expired - Fee Related DE69511726T2 (de) 1994-12-22 1995-12-20 Halbleiteranordnung mit isoliertem gate

Country Status (6)

Country Link
US (1) US5900648A (de)
EP (1) EP0799499B1 (de)
JP (1) JPH10510952A (de)
DE (1) DE69511726T2 (de)
SE (1) SE9404452D0 (de)
WO (1) WO1996019834A2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69521409T2 (de) * 1995-03-01 2002-05-16 Sumitomo Electric Industries, Inc. Boraluminiumnitrid-Beschichtung und Verfahren zu ihrer Herstellung
US5915164A (en) * 1995-12-28 1999-06-22 U.S. Philips Corporation Methods of making high voltage GaN-A1N based semiconductor devices
SE9602745D0 (sv) * 1996-07-11 1996-07-11 Abb Research Ltd A method for producing a channel region layer in a SiC-layer for a voltage controlled semiconductor device
US6180958B1 (en) * 1997-02-07 2001-01-30 James Albert Cooper, Jr. Structure for increasing the maximum voltage of silicon carbide power transistors
WO1999009598A1 (de) * 1997-08-20 1999-02-25 Siemens Aktiengesellschaft Halbleiterstruktur mit einem alpha-siliziumcarbidbereich sowie verwendung dieser halbleiterstruktur
GB2343294A (en) * 1998-10-31 2000-05-03 Sharp Kk Lattice-matched semiconductor devices
JP3440861B2 (ja) * 1999-01-19 2003-08-25 松下電器産業株式会社 電界効果トランジスタの製造方法
US6686616B1 (en) * 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
JP4869489B2 (ja) * 2001-03-28 2012-02-08 三菱電機株式会社 半導体デバイス
DE10120877A1 (de) * 2001-04-27 2002-10-31 Philips Corp Intellectual Pty Anordnung mit einem Halbleiterbauelement
US6906350B2 (en) 2001-10-24 2005-06-14 Cree, Inc. Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
US6956239B2 (en) * 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region
TWI313060B (en) * 2003-07-28 2009-08-01 Japan Science & Tech Agency Feild effect transisitor and fabricating method thereof
JP4066946B2 (ja) * 2003-12-18 2008-03-26 日産自動車株式会社 半導体装置
JP4635470B2 (ja) * 2004-04-19 2011-02-23 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US7238224B2 (en) * 2004-10-29 2007-07-03 Hewlett-Packard Development Company, L.P. Fluid-gas separator
US20060091606A1 (en) * 2004-10-28 2006-05-04 Gary Paugh Magnetic building game
US7265399B2 (en) * 2004-10-29 2007-09-04 Cree, Inc. Asymetric layout structures for transistors and methods of fabricating the same
US7348612B2 (en) * 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
US7326962B2 (en) * 2004-12-15 2008-02-05 Cree, Inc. Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same
US8203185B2 (en) * 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
US7402844B2 (en) * 2005-11-29 2008-07-22 Cree, Inc. Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods
US7646043B2 (en) * 2006-09-28 2010-01-12 Cree, Inc. Transistors having buried p-type layers coupled to the gate
US8067776B2 (en) * 2007-06-08 2011-11-29 Nissan Motor Co., Ltd. Method of manufacturing semiconductor device and semiconductor device manufactured thereof
WO2009110229A1 (ja) * 2008-03-07 2009-09-11 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
US8476733B2 (en) * 2009-11-17 2013-07-02 Panasonic Corporation Semiconductor element and manufacturing method therefor
JP6989537B2 (ja) 2019-01-04 2022-01-05 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
IT201900007217A1 (it) 2019-05-24 2020-11-24 Consiglio Nazionale Ricerche Dispositivo elettronico basato su sic di tipo migliorato e metodo di fabbricazione dello stesso

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3692700A (en) * 1970-08-31 1972-09-19 Exxon Research Engineering Co Process and compositions for cracking hydrocarbon feeds
US4849797A (en) * 1987-01-23 1989-07-18 Hosiden Electronics Co., Ltd. Thin film transistor
US5258631A (en) * 1987-01-30 1993-11-02 Hitachi, Ltd. Semiconductor device having a two-dimensional electron gas as an active layer
DE4009837A1 (de) * 1989-03-27 1990-10-11 Sharp Kk Verfahren zur herstellung einer halbleitereinrichtung
JPH0766971B2 (ja) * 1989-06-07 1995-07-19 シャープ株式会社 炭化珪素半導体装置
JP2813023B2 (ja) * 1990-03-13 1998-10-22 株式会社神戸製鋼所 Ｍｉｓ型ダイヤモンド電界効果トランジスタ
US5326992A (en) * 1992-07-29 1994-07-05 The United States Of America As Represented By The Secretary Of The Navy Silicon carbide and SiCAlN heterojunction bipolar transistor structures
DE4323814A1 (de) * 1992-09-25 1994-03-31 Siemens Ag MIS-Feldeffekttransistor
FR2707425A1 (fr) * 1993-07-09 1995-01-13 Thomson Csf Structure en matériau semiconducteur, application à la réalisation d'un transistor et procédé de réalisation.
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
KR0153878B1 (ko) * 1994-06-07 1998-10-15 쿠미하시 요시유키 탄화규소반도체장치와 그 제조방법
JPH08204179A (ja) * 1995-01-26 1996-08-09 Fuji Electric Co Ltd 炭化ケイ素トレンチｍｏｓｆｅｔ

Also Published As

Publication number Publication date
US5900648A (en) 1999-05-04
DE69511726T2 (de) 1999-12-16
SE9404452D0 (sv) 1994-12-22
EP0799499B1 (de) 1999-08-25
WO1996019834A2 (en) 1996-06-27
JPH10510952A (ja) 1998-10-20
EP0799499A2 (de) 1997-10-08
WO1996019834A3 (en) 1996-08-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee