DE69841667D1 - Halbleiteranordnungen mit MOS-Gatter - Google Patents

Halbleiteranordnungen mit MOS-Gatter

Info

Publication number: DE69841667D1
Authority: DE; Germany
Prior art keywords: mos; gate; semiconductor arrangements; arrangements; semiconductor
Prior art date: 1997-03-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69841667T

Other languages

English (en)

Inventor

John Manning Neilson

Richard Douglas Stokes

Christopher Boguslaw Kocon

Linda Susan Brush

John Lawrence Benjamin

Louis Ellen Skurkey

Christopher Lawrence Rexer

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fairchild Semiconductor Corp

Original Assignee

Harris Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-03-11

Filing date

1998-03-10

Publication date

2010-07-01

1998-03-10 Application filed by Harris Corp filed Critical Harris Corp

2010-07-01 Application granted granted Critical

2010-07-01 Publication of DE69841667D1 publication Critical patent/DE69841667D1/de

2018-03-11 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs

DE69841667T 1997-03-11 1998-03-10 Halbleiteranordnungen mit MOS-Gatter Expired - Lifetime DE69841667D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US08/814,842 US5877044A (en)	1997-03-11	1997-03-11	Method of making MOS-gated semiconductor devices

Publications (1)

Publication Number	Publication Date
DE69841667D1 true DE69841667D1 (de)	2010-07-01

Family

ID=25216137

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69841667T Expired - Lifetime DE69841667D1 (de)	1997-03-11	1998-03-10	Halbleiteranordnungen mit MOS-Gatter

Country Status (7)

Country	Link
US (1)	US5877044A (de)
EP (1)	EP0865080B1 (de)
JP (1)	JP3971838B2 (de)
KR (1)	KR100505271B1 (de)
CN (1)	CN1146970C (de)
DE (1)	DE69841667D1 (de)
TW (1)	TW385496B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20080029830A1 (en) *	2006-08-01	2008-02-07	Taiwan Semiconductor Manufacturing Company, Ltd.	Forming reverse-extension MOS in standard CMOS flow
JP2008140939A (ja) *	2006-11-30	2008-06-19	Toshiba Corp	半導体装置およびその製造方法
US8178930B2 (en) *	2007-03-06	2012-05-15	Taiwan Semiconductor Manufacturing Co., Ltd.	Structure to improve MOS transistor on-breakdown voltage
US9040384B2 (en) *	2012-10-19	2015-05-26	Freescale Semiconductor, Inc.	High voltage diode
CN103219238B (zh) *	2013-04-27	2016-09-21	中国东方电气集团有限公司	一种全自对准的绝缘栅双极晶体管器件及其制造方法
CN103390641B (zh) *	2013-04-27	2016-02-03	中国东方电气集团有限公司	一种绝缘栅双极型晶体管及其自对准制作方法
CN103219237B (zh) *	2013-04-27	2015-10-28	中国东方电气集团有限公司	一种自对准绝缘栅双极型晶体管的制作方法
CN111933700B (zh) *	2020-09-29	2021-06-11	中芯集成电路制造(绍兴)有限公司	功率半导体器件及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0227894A3 (de) *	1985-12-19	1988-07-13	SILICONIX Incorporated	Vertikaler DMOS-Transistor von hoher Packungsdichte
JPS62232167A (ja) *	1986-04-02	1987-10-12	Nissan Motor Co Ltd	半導体装置
JPS6419772A (en) *	1987-07-15	1989-01-23	Nec Corp	Manufacture of vertical mosfet
JPH0766968B2 (ja) *	1987-08-24	1995-07-19	株式会社日立製作所	半導体装置及びその製造方法
JPH01238172A (ja) *	1988-03-18	1989-09-22	Fuji Electric Co Ltd	Ｍｏｓ型半導体素子の製造方法
US5182222A (en) *	1991-06-26	1993-01-26	Texas Instruments Incorporated	Process for manufacturing a DMOS transistor
US5171705A (en) *	1991-11-22	1992-12-15	Supertex, Inc.	Self-aligned structure and process for DMOS transistor
IT1252625B (it) *	1991-12-05	1995-06-19	Cons Ric Microelettronica	Processo di fabbricazione di transistors a effetto di campo con gate isolato (igfet) a bassa densita' di corto circuiti tra gate e source e dispositivi con esso ottenuti
DE69432407D1 (de) *	1994-05-19	2003-05-08	Cons Ric Microelettronica	Integrierte Leistungsschaltung ("PIC") mit vertikalem IGB und Verfahren zur Herstellung derselben
US5474946A (en) *	1995-02-17	1995-12-12	International Rectifier Corporation	Reduced mask process for manufacture of MOS gated devices

1997
- 1997-03-11 US US08/814,842 patent/US5877044A/en not_active Expired - Lifetime
1998
- 1998-03-10 DE DE69841667T patent/DE69841667D1/de not_active Expired - Lifetime
- 1998-03-10 JP JP07511198A patent/JP3971838B2/ja not_active Expired - Fee Related
- 1998-03-10 CN CNB981060951A patent/CN1146970C/zh not_active Expired - Lifetime
- 1998-03-10 EP EP98104281A patent/EP0865080B1/de not_active Expired - Lifetime
- 1998-03-11 KR KR10-1998-0008091A patent/KR100505271B1/ko not_active IP Right Cessation
- 1998-03-13 TW TW087103592A patent/TW385496B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
EP0865080A3 (de)	1998-10-28
CN1198003A (zh)	1998-11-04
CN1146970C (zh)	2004-04-21
KR100505271B1 (ko)	2005-12-02
US5877044A (en)	1999-03-02
EP0865080B1 (de)	2010-05-19
EP0865080A2 (de)	1998-09-16
JPH10270680A (ja)	1998-10-09
TW385496B (en)	2000-03-21
KR19980080128A (ko)	1998-11-25
JP3971838B2 (ja)	2007-09-05

Publication	Publication Date	Title
DE69841511D1 (de)	2010-04-01	Halbleiter
DE19882568T1 (de)	2000-07-13	Wafer-Gehäuse mit Tür
DE69827870D1 (de)	2005-01-05	Drebohrmeissel mit beweglichen Formation-eingreifenden Elementen
EP0951071A4 (de)	2001-03-14	Halbleitervorrichtung
DE69535551D1 (de)	2007-09-20	Halbleiteranordnung mit Kontaktlöchern
DE69806137D1 (de)	2002-07-25	Silizium mit niedriger defektdichte
DE69534584D1 (de)	2005-12-15	Halbleiter-Bauteil mit Gräben
IT1294293B1 (it)	1999-03-24	Dissipatore di calore
DE69942509D1 (de)	2010-07-29	Gegenstand mit halbleiterchip
DE69735409D1 (de)	2006-05-04	Optoelektronische halbleiteranordnung
DE69937137D1 (de)	2007-10-31	Halbleitervorrichtung mit Reflektor
DE69939815D1 (de)	2008-12-11	Elektrolumineszierende anordnungen
DE69911753D1 (de)	2003-11-06	Elektrolumineszente anordnungen
ID22500A (id)	1999-10-21	Turunan sulfonamida
ID24430A (id)	2000-07-20	Turunan-turunan benzamidina
NO993048L (no)	1999-08-23	Halvlederelement
DE69508046D1 (de)	1999-04-08	Integrierte halbleiteranordnung
DE69527394D1 (de)	2002-08-22	Halbleiterbaueinheit
DE59801130D1 (de)	2001-09-06	Optoelektronisches halbleiterbauelement
DE19823069B8 (de)	2007-06-06	Halbleiterbauelement
DE69943006D1 (de)	2011-01-13	Kühlkörper
DE69616251D1 (de)	2001-11-29	Halbleiteranordnung mit Halbleiterleistungselementen
DE69832008D1 (de)	2005-12-01	Halbleiteranordnung mit getrennten Auswechselungsmitteln
DE69737320D1 (de)	2007-03-22	Halbleitervorrichtung
DE69841667D1 (de)	2010-07-01	Halbleiteranordnungen mit MOS-Gatter

Legal Events

Date	Code	Title	Description
2011-03-24	8327	Change in the person/name/address of the patent owner	Owner name: FAIRCHILD SEMICONDUCTOR CORP., SOUTH PORTLAND,, US
2011-06-09	8364	No opposition during term of opposition