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DE69400237D1 - Halbleiterlaserdioden und Herstellungsverfahren - Google Patents

Halbleiterlaserdioden und Herstellungsverfahren

Info

Publication number
DE69400237D1
DE69400237D1 DE69400237T DE69400237T DE69400237D1 DE 69400237 D1 DE69400237 D1 DE 69400237D1 DE 69400237 T DE69400237 T DE 69400237T DE 69400237 T DE69400237 T DE 69400237T DE 69400237 D1 DE69400237 D1 DE 69400237D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
manufacturing processes
laser diodes
diodes
processes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69400237T
Other languages
English (en)
Other versions
DE69400237T2 (de
Inventor
Josephus Petrus Weterings
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE69400237D1 publication Critical patent/DE69400237D1/de
Application granted granted Critical
Publication of DE69400237T2 publication Critical patent/DE69400237T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69400237T 1993-02-22 1994-02-15 Halbleiterlaserdioden und Herstellungsverfahren Expired - Fee Related DE69400237T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93200496 1993-02-22

Publications (2)

Publication Number Publication Date
DE69400237D1 true DE69400237D1 (de) 1996-07-18
DE69400237T2 DE69400237T2 (de) 1996-12-05

Family

ID=8213660

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69400237T Expired - Fee Related DE69400237T2 (de) 1993-02-22 1994-02-15 Halbleiterlaserdioden und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5430751A (de)
EP (1) EP0613222B1 (de)
JP (1) JPH06252511A (de)
DE (1) DE69400237T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996033537A2 (en) * 1995-04-19 1996-10-24 Philips Electronics N.V. Method of manufacturing an optoelectronic semiconductor device, in particular a semiconductor diode laser
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
US6214178B1 (en) 1998-12-22 2001-04-10 Lucent Technologies, Inc. Focused ion beam formation of angled optoelectronic devices
JP4665240B2 (ja) * 2001-06-25 2011-04-06 富士通株式会社 光伝送装置
GB0124845D0 (en) * 2001-10-16 2001-12-05 Denselight Semiconductors Pte Facet profiling for reflectivity control
JP2008294426A (ja) * 2007-04-26 2008-12-04 Sharp Corp 半導体レーザ素子及び電磁界発生素子
WO2017129221A1 (en) * 2016-01-25 2017-08-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for producing an optical semiconductor component and optical semiconductor component
US20190148911A1 (en) * 2017-11-15 2019-05-16 Macom Technology Solutions Holdings, Inc. Techniques for providing curved facet semiconductor lasers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143092A (en) * 1979-04-26 1980-11-08 Nec Corp Semiconductor laser
JPS61253881A (ja) * 1985-05-07 1986-11-11 Hitachi Ltd 分布帰還型半導体レ−ザ
JPS6226884A (ja) * 1985-07-26 1987-02-04 Nec Corp 半導体レ−ザ
JPS63227091A (ja) * 1987-03-17 1988-09-21 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置およびその製造方法
US4815084A (en) * 1987-05-20 1989-03-21 Spectra Diode Laboratories, Inc. Semiconductor laser with integrated optical elements
JPH02260679A (ja) * 1989-03-31 1990-10-23 Toshiba Corp 半導体レーザ装置
US4935939A (en) * 1989-05-24 1990-06-19 Liau Zong Long Surface emitting laser with monolithic integrated lens
JPH03119782A (ja) * 1989-10-02 1991-05-22 Fujitsu Ltd 光半導体装置
JPH04253387A (ja) * 1991-01-28 1992-09-09 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ

Also Published As

Publication number Publication date
EP0613222B1 (de) 1996-06-12
DE69400237T2 (de) 1996-12-05
US5430751A (en) 1995-07-04
EP0613222A1 (de) 1994-08-31
JPH06252511A (ja) 1994-09-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee