[go: up one dir, main page]

DE69409564D1 - Halbleiterlaser und Modulationsverfahren - Google Patents

Halbleiterlaser und Modulationsverfahren

Info

Publication number
DE69409564D1
DE69409564D1 DE69409564T DE69409564T DE69409564D1 DE 69409564 D1 DE69409564 D1 DE 69409564D1 DE 69409564 T DE69409564 T DE 69409564T DE 69409564 T DE69409564 T DE 69409564T DE 69409564 D1 DE69409564 D1 DE 69409564D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
modulation process
modulation
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69409564T
Other languages
English (en)
Other versions
DE69409564T2 (de
Inventor
Vera B Gorfinkel
Serge Luryi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GORFINKEL VERA BORISOVNA
AT&T Corp
Original Assignee
GORFINKEL VERA BORISOVNA
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GORFINKEL VERA BORISOVNA, AT&T Corp filed Critical GORFINKEL VERA BORISOVNA
Publication of DE69409564D1 publication Critical patent/DE69409564D1/de
Application granted granted Critical
Publication of DE69409564T2 publication Critical patent/DE69409564T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
DE69409564T 1993-02-25 1994-02-16 Halbleiterlaser und Modulationsverfahren Expired - Fee Related DE69409564T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/022,249 US5311526A (en) 1993-02-25 1993-02-25 Article that comprises a semiconductor laser, and method of operating the article

Publications (2)

Publication Number Publication Date
DE69409564D1 true DE69409564D1 (de) 1998-05-20
DE69409564T2 DE69409564T2 (de) 1998-08-13

Family

ID=21808637

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69409564T Expired - Fee Related DE69409564T2 (de) 1993-02-25 1994-02-16 Halbleiterlaser und Modulationsverfahren

Country Status (4)

Country Link
US (1) US5311526A (de)
EP (1) EP0613223B1 (de)
JP (1) JP3207316B2 (de)
DE (1) DE69409564T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4429582C2 (de) * 1994-08-19 1998-02-26 Draegerwerk Ag Strahlungsquelle für ein Meßsystem
US5631916A (en) * 1995-05-01 1997-05-20 Georges; John B. Apparatus and method for optically transmitting electrical signals in the 20-300 gigahertz frequency range
US5784157A (en) * 1995-11-21 1998-07-21 The Research Foundation Of State University Of New York Method and apparatus for identifying fluorophores
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6792011B2 (en) * 2001-04-19 2004-09-14 Hrl Laboratories, Llc Frequency modulated laser with high modulation bandwidth
DE102005055159B4 (de) * 2005-09-29 2013-02-21 Osram Opto Semiconductors Gmbh Hochfrequenz-modulierter oberflächenemittierender Halbleiterlaser
JP2010278396A (ja) * 2009-06-01 2010-12-09 Nippon Telegr & Teleph Corp <Ntt> 直接変調型半導体レーザ
JP2010278395A (ja) * 2009-06-01 2010-12-09 Nippon Telegr & Teleph Corp <Ntt> 直接変調型半導体レーザ
JP5215240B2 (ja) * 2009-06-01 2013-06-19 日本電信電話株式会社 直接変調型半導体レーザ
KR101817143B1 (ko) * 2017-07-13 2018-01-10 정증자 엘리베이터 로핑장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4750833A (en) * 1985-12-03 1988-06-14 Princeton Applied Research Corp. Fiber optic dispersion method and apparatus
US5023878A (en) * 1989-09-15 1991-06-11 At&T Bell Laboratories Apparatus comprising a quantum well device and method of operating the apparatus
JPH03219685A (ja) * 1990-01-25 1991-09-27 Topcon Corp 半導体レーザ駆動装置
US5172382A (en) * 1991-02-05 1992-12-15 Cornell Research Foundation, Inc. Ultrahigh frequency optical self-modulator

Also Published As

Publication number Publication date
JPH06291729A (ja) 1994-10-18
EP0613223A1 (de) 1994-08-31
EP0613223B1 (de) 1998-04-15
JP3207316B2 (ja) 2001-09-10
US5311526A (en) 1994-05-10
DE69409564T2 (de) 1998-08-13

Similar Documents

Publication Publication Date Title
DE69409564D1 (de) Halbleiterlaser und Modulationsverfahren
DE69435045D1 (de) Halbleiter-Anordnung und Herstellungsverfahren dafür
DE69407455D1 (de) Halbleiterlaser
DE69124232D1 (de) Laser und laserschweissenverfahren
DE69517614D1 (de) Halbleiterdiodenlaser und dessen Herstellungsverfahren
DE69414208D1 (de) Optischer Halbleitervorrichtung und Herstellungsverfahren
DE69411364D1 (de) Halbleiterlaser
DE69430829D1 (de) Mehrchipmodul und Herstellungsverfahren dafür
DE69225068D1 (de) Optisches modul und herstellungsverfahren dafür
DE69635410D1 (de) Halbleiterlaser und dessen herstellungsverfahren
DE69305928D1 (de) Halbleiterlaser
DE69410214D1 (de) Monolithische integrierter Laser und Modulator und Herstellungsverfahren
DE69413602D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69405480D1 (de) Monochromatischer Halbleiterlaser
DE69325343D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69230248D1 (de) Modulationsverfahren und Schaltungsanordnung dafür
DE69420944D1 (de) Halbleitervorrichtung und herstellungsverfahren
DE69504262D1 (de) Halbleiterlaser und dessen Herstellungsverfahren
DE69801342D1 (de) Halbleiterlaser und dazugehöriges Herstellungsverfahren
DE69712541D1 (de) Halbleiterlaser und Herstellungsverfahren
DE69209045D1 (de) Halbleiterlaser
DE69407902D1 (de) Verstärkungsstufe und Oszillator
DE69414028D1 (de) Lasersystem und Verwendung des Lasersystems
DE69423196D1 (de) Halbleiterlaservorrichtung
DE69401733D1 (de) Halbleiterlaser und dessen Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee