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DE69226596D1 - Signalprozessor mit Lawinendioden - Google Patents

Signalprozessor mit Lawinendioden

Info

Publication number
DE69226596D1
DE69226596D1 DE69226596T DE69226596T DE69226596D1 DE 69226596 D1 DE69226596 D1 DE 69226596D1 DE 69226596 T DE69226596 T DE 69226596T DE 69226596 T DE69226596 T DE 69226596T DE 69226596 D1 DE69226596 D1 DE 69226596D1
Authority
DE
Germany
Prior art keywords
signal processor
avalanche diodes
avalanche
diodes
processor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69226596T
Other languages
English (en)
Other versions
DE69226596T2 (de
Inventor
Shigetoshi Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69226596D1 publication Critical patent/DE69226596D1/de
Application granted granted Critical
Publication of DE69226596T2 publication Critical patent/DE69226596T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
DE69226596T 1991-10-25 1992-10-23 Signalprozessor mit Lawinendioden Expired - Fee Related DE69226596T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30570391 1991-10-25
JP30570491 1991-10-25

Publications (2)

Publication Number Publication Date
DE69226596D1 true DE69226596D1 (de) 1998-09-17
DE69226596T2 DE69226596T2 (de) 1999-03-18

Family

ID=26564409

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69226596T Expired - Fee Related DE69226596T2 (de) 1991-10-25 1992-10-23 Signalprozessor mit Lawinendioden

Country Status (3)

Country Link
US (1) US5401952A (de)
EP (1) EP0538886B1 (de)
DE (1) DE69226596T2 (de)

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US6018448A (en) 1997-04-08 2000-01-25 X2Y Attenuators, L.L.C. Paired multi-layered dielectric independent passive component architecture resulting in differential and common mode filtering with surge protection in one integrated package
US6650525B2 (en) 1997-04-08 2003-11-18 X2Y Attenuators, Llc Component carrier
US6606011B2 (en) 1998-04-07 2003-08-12 X2Y Attenuators, Llc Energy conditioning circuit assembly
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KR100246358B1 (ko) * 1997-09-25 2000-03-15 김영환 전자셔터를 구비한 액티브 픽셀 센서
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US7427816B2 (en) 1998-04-07 2008-09-23 X2Y Attenuators, Llc Component carrier
US9029793B2 (en) 1998-11-05 2015-05-12 Siemens Aktiengesellschaft Imaging device
AU5866100A (en) * 1999-04-02 2000-11-14 Cyril Guedj Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium
WO2001003205A1 (en) * 1999-07-02 2001-01-11 Digirad Corporation Indirect back surface contact to semiconductor devices
EP1073267B1 (de) 1999-07-30 2010-12-22 Canon Kabushiki Kaisha Strahlungsbildaufnahmeapparatus
US6359293B1 (en) * 1999-08-17 2002-03-19 Agere Systems Guardian Corp. Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes
US7113383B2 (en) 2000-04-28 2006-09-26 X2Y Attenuators, Llc Predetermined symmetrically balanced amalgam with complementary paired portions comprising shielding electrodes and shielded electrodes and other predetermined element portions for symmetrically balanced and complementary energy portion conditioning
US7262949B2 (en) 2000-08-15 2007-08-28 X2Y Attenuators, Llc Electrode arrangement for circuit energy conditioning
JP3493405B2 (ja) * 2000-08-31 2004-02-03 ミノルタ株式会社 固体撮像装置
US7193831B2 (en) * 2000-10-17 2007-03-20 X2Y Attenuators, Llc Energy pathway arrangement
IL155402A0 (en) * 2000-10-17 2003-11-23 X2Y Attenuators Llc Amalgam of shielding and shielded energy pathways and other elements for single or multiple circuitries with common reference node
DE60134493D1 (de) * 2000-12-12 2008-07-31 Japan Science & Tech Agency Lenkmechanismus für elektrisches fahrzeug
KR20040031862A (ko) * 2002-10-04 2004-04-14 (주)그래픽테크노재팬 생산성 및 감도가 향상된 이미지 센서
GB0224689D0 (en) 2002-10-23 2002-12-04 Simage Oy Formation of contacts on semiconductor substrates
JP2006504258A (ja) * 2002-10-25 2006-02-02 ゴールドパワー リミテッド 回路基板およびその製造方法
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7643755B2 (en) * 2003-10-13 2010-01-05 Noble Peak Vision Corp. Optical receiver comprising a receiver photodetector integrated with an imaging array
US7180718B2 (en) * 2003-01-31 2007-02-20 X2Y Attenuators, Llc Shielded energy conditioner
EP1629582A2 (de) 2003-05-29 2006-03-01 X2Y Attenuators, L.L.C. Verbinderbezogene strukturen mit einer energie-aufbereitungseinrichtung
KR20060036103A (ko) 2003-07-21 2006-04-27 엑스2와이 어테뉴에이터스, 엘.엘.씨 필터 어셈블리
DE602004016679D1 (de) * 2003-10-13 2008-10-30 Noble Peak Vision Corp Mit einem siliziumsubstrat und einem siliziumschaltkreis integrierte isolierte germanium-photodetektoren umfassender bildsensor
JP2007515794A (ja) 2003-12-22 2007-06-14 エックストゥーワイ アテニュエイターズ，エルエルシー 内部で遮蔽されたエネルギー調節器
WO2006093831A2 (en) 2005-03-01 2006-09-08 X2Y Attenuators, Llc Energy conditioner with tied through electrodes
US7782587B2 (en) 2005-03-01 2010-08-24 X2Y Attenuators, Llc Internally overlapped conditioners
US7586728B2 (en) 2005-03-14 2009-09-08 X2Y Attenuators, Llc Conditioner with coplanar conductors
US7233051B2 (en) * 2005-06-28 2007-06-19 Intel Corporation Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
KR100818632B1 (ko) * 2005-07-26 2008-04-02 한국전자통신연구원 부밴드 천이 반도체 레이저
JP4212623B2 (ja) * 2006-01-31 2009-01-21 三洋電機株式会社 撮像装置
US8026777B2 (en) 2006-03-07 2011-09-27 X2Y Attenuators, Llc Energy conditioner structures
EP1873834B1 (de) * 2006-06-29 2008-12-10 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Löschbarriere, insbesondere für einem Halbleiterdetektor, und zugehöriges Betriebsverfahren
US7741657B2 (en) * 2006-07-17 2010-06-22 Intel Corporation Inverted planar avalanche photodiode
US7683397B2 (en) * 2006-07-20 2010-03-23 Intel Corporation Semi-planar avalanche photodiode
JP5037078B2 (ja) * 2006-09-15 2012-09-26 富士フイルム株式会社 固体撮像素子およびその駆動方法
US7485840B2 (en) * 2007-02-08 2009-02-03 Dalsa Corporation Semiconductor charge multiplication amplifier device and semiconductor image sensor provided with such an amplifier device
US8754378B2 (en) * 2007-08-08 2014-06-17 Koninklijke Philips N.V. Silicon photomultiplier readout circuitry
CN102903782B (zh) * 2012-10-17 2016-02-03 上海华虹宏力半导体制造有限公司 光电探测器及其制作方法
JP7576928B2 (ja) * 2020-05-08 2024-11-01 浜松ホトニクス株式会社 光検出装置、及び光センサの駆動方法

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Also Published As

Publication number Publication date
US5401952A (en) 1995-03-28
EP0538886B1 (de) 1998-08-12
EP0538886A1 (de) 1993-04-28
DE69226596T2 (de) 1999-03-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee