[go: up one dir, main page]

DE69125903D1 - Lawinenfotodiode - Google Patents

Lawinenfotodiode

Info

Publication number
DE69125903D1
DE69125903D1 DE69125903T DE69125903T DE69125903D1 DE 69125903 D1 DE69125903 D1 DE 69125903D1 DE 69125903 T DE69125903 T DE 69125903T DE 69125903 T DE69125903 T DE 69125903T DE 69125903 D1 DE69125903 D1 DE 69125903D1
Authority
DE
Germany
Prior art keywords
photo diode
avalanche photo
avalanche
diode
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69125903T
Other languages
English (en)
Other versions
DE69125903T2 (de
Inventor
Taguchi Kenko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69125903D1 publication Critical patent/DE69125903D1/de
Publication of DE69125903T2 publication Critical patent/DE69125903T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
DE69125903T 1990-09-17 1991-09-17 Lawinenfotodiode Expired - Lifetime DE69125903T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2246592A JPH04125977A (ja) 1990-09-17 1990-09-17 ヘテロ多重構造アバランシ・フォトダイオード

Publications (2)

Publication Number Publication Date
DE69125903D1 true DE69125903D1 (de) 1997-06-05
DE69125903T2 DE69125903T2 (de) 1997-11-20

Family

ID=17150713

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125903T Expired - Lifetime DE69125903T2 (de) 1990-09-17 1991-09-17 Lawinenfotodiode

Country Status (4)

Country Link
US (1) US5432361A (de)
EP (1) EP0477729B1 (de)
JP (1) JPH04125977A (de)
DE (1) DE69125903T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2845081B2 (ja) * 1993-04-07 1999-01-13 日本電気株式会社 半導体受光素子
JP3287458B2 (ja) * 1998-06-24 2002-06-04 日本電気株式会社 超高速・低電圧駆動アバランシェ増倍型半導体受光素子
US6376858B1 (en) * 1998-11-20 2002-04-23 Hughes Electronics Corp. Resonant tunneling diode with adjusted effective masses
JP2001332759A (ja) 2000-03-16 2001-11-30 Matsushita Electric Ind Co Ltd アバランシェフォトダイオード
US6420728B1 (en) * 2000-03-23 2002-07-16 Manijeh Razeghi Multi-spectral quantum well infrared photodetectors
WO2002027805A2 (en) * 2000-09-29 2002-04-04 Board Of Regents, The University Of Texas System A theory of the charge multiplication process in avalanche photodiodes
US7072557B2 (en) * 2001-12-21 2006-07-04 Infinera Corporation InP-based photonic integrated circuits with Al-containing waveguide cores and InP-based array waveguide gratings (AWGs) and avalanche photodiodes (APDs) and other optical components containing an InAlGaAs waveguide core
US6906358B2 (en) * 2003-01-30 2005-06-14 Epir Technologies, Inc. Nonequilibrium photodetector with superlattice exclusion layer
DE602004023775D1 (de) * 2003-05-31 2009-12-03 Cameron Systems Ireland Ltd Vorrichtung und Verfahren zur Wiedergewinnung von Flüssigkeiten aus einem Bohrloch und/oder Einspritzen von Flüssigkeiten in ein Bohrloch
US8022351B2 (en) * 2008-02-14 2011-09-20 California Institute Of Technology Single photon detection with self-quenching multiplication
US10128397B1 (en) * 2012-05-21 2018-11-13 The Boeing Company Low excess noise, high gain avalanche photodiodes
US9799689B2 (en) 2014-11-13 2017-10-24 Artilux Inc. Light absorption apparatus
TWI621253B (zh) 2014-11-13 2018-04-11 光澄科技股份有限公司 光吸收裝置及其形成方法
KR101959141B1 (ko) * 2017-11-30 2019-03-15 주식회사 우리로 애벌란치 포토 다이오드
RU2769749C1 (ru) * 2021-04-16 2022-04-05 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Лавинный фотодиод и способ его изготовления
CN116705892B (zh) * 2023-06-07 2024-04-23 北京邮电大学 一种雪崩二极管

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器
JPS61167824A (ja) * 1985-01-18 1986-07-29 Nippon Soken Inc 光電変換回路
KR900002687B1 (ko) * 1985-12-16 1990-04-23 후지쓰가부시끼가이샤 Mbe법에 의한 기판에 격자 정합시키는 4원 또는 5원 흔정 반도체의 성장방법
JPH0721594B2 (ja) * 1987-01-19 1995-03-08 国際電信電話株式会社 光スイツチ
JP3032209B2 (ja) * 1988-09-30 2000-04-10 日本電信電話株式会社 光検出器
JPH0821727B2 (ja) * 1988-11-18 1996-03-04 日本電気株式会社 アバランシェフォトダイオード
JP2700492B2 (ja) * 1989-08-03 1998-01-21 日本電信電話株式会社 アバランシェフォトダイオード
JPH03289180A (ja) * 1990-04-06 1991-12-19 Nippon Telegr & Teleph Corp <Ntt> アバランシ・フォトダイオード

Also Published As

Publication number Publication date
DE69125903T2 (de) 1997-11-20
US5432361A (en) 1995-07-11
EP0477729B1 (de) 1997-05-02
JPH04125977A (ja) 1992-04-27
EP0477729A1 (de) 1992-04-01

Similar Documents

Publication Publication Date Title
DE69131410D1 (de) Lawinenphotodiode
DE69120849D1 (de) Lawinenphotodiode
NO914401D0 (no) Fotodetektor
DE69114161D1 (de) Optoelektronische Baugruppe.
DE69207179D1 (de) Optoelektronisches bauteil
DE69224637D1 (de) Optoelektronisches bauelement
DE69217360D1 (de) Laserdioden
DE69104661D1 (de) Laserdioden-Anordnung.
DE69104429D1 (de) Optisches Halbleiterbauelement.
DE59101604D1 (de) Optoelektronische Abtasteinrichtung.
FR2670050B1 (fr) Detecteur optoelectronique a semiconducteurs.
DE69218157D1 (de) Lawinenfotodiode
DE69218474D1 (de) Lawinenfotodiode
DE69125903D1 (de) Lawinenfotodiode
DE69229369D1 (de) Halbleiterphotodetektor mit Lawinenmultiplikation
DE69118987D1 (de) Freilaufkupplung
FI921322A0 (fi) Fotoelektrisk roekdetektor.
FI915417L (fi) Sur katalysator foer kondensationsreaktioner.
DE69107845D1 (de) Laserdiodenstruktur.
DE69119995D1 (de) Photodiode
DE69305478D1 (de) Lawinen-Fotodiode
DE69129311D1 (de) Photodetektor
DE69213054D1 (de) Optischer Entfernungsmesser
FR2618257B1 (fr) Photodiode a avalanche.
DE3751946D1 (de) Monolithisch integrierter Photoempfänger

Legal Events

Date Code Title Description
8364 No opposition during term of opposition