DE69027280D1 - Verfahren zur Herstellung einer Feldisolationsstruktur und einer Gatestruktur für MISFET integrierte Schaltungen - Google Patents
Verfahren zur Herstellung einer Feldisolationsstruktur und einer Gatestruktur für MISFET integrierte SchaltungenInfo
- Publication number
- DE69027280D1 DE69027280D1 DE69027280T DE69027280T DE69027280D1 DE 69027280 D1 DE69027280 D1 DE 69027280D1 DE 69027280 T DE69027280 T DE 69027280T DE 69027280 T DE69027280 T DE 69027280T DE 69027280 D1 DE69027280 D1 DE 69027280D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- integrated circuits
- field isolation
- gate structure
- isolation structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT08364389A IT1236728B (it) | 1989-10-24 | 1989-10-24 | Procedimento per formare la struttura di isolamento e la struttura di gate di dispositivi integrati |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69027280D1 true DE69027280D1 (de) | 1996-07-11 |
DE69027280T2 DE69027280T2 (de) | 1996-12-05 |
Family
ID=11323576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69027280T Expired - Fee Related DE69027280T2 (de) | 1989-10-24 | 1990-10-22 | Verfahren zur Herstellung einer Feldisolationsstruktur und einer Gatestruktur für MISFET integrierte Schaltungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5122473A (de) |
EP (1) | EP0429404B1 (de) |
JP (1) | JP3039978B2 (de) |
DE (1) | DE69027280T2 (de) |
IT (1) | IT1236728B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5310692A (en) * | 1992-05-29 | 1994-05-10 | Sgs-Thomson Microelectronics, Inc. | Method of forming a MOSFET structure with planar surface |
US5346587A (en) * | 1993-08-12 | 1994-09-13 | Micron Semiconductor, Inc. | Planarization of a gate electrode for improved gate patterning over non-planar active area isolation |
US6034410A (en) * | 1994-01-14 | 2000-03-07 | Stmicroelectronics, Inc. | MOSFET structure with planar surface |
FR2728102A1 (fr) * | 1994-12-08 | 1996-06-14 | Sgs Thomson Microelectronics | Procede de fabrication de transistors mos de circuit integre |
US5606202A (en) * | 1995-04-25 | 1997-02-25 | International Business Machines, Corporation | Planarized gate conductor on substrates with above-surface isolation |
FR2735906B1 (fr) * | 1995-06-21 | 1997-09-05 | Sgs Thomson Microelectronics | Procede de fabrication de dispositifs semiconducteurs, en particulier de transistors mos ou transistors mos/bipolaires |
KR100401377B1 (ko) * | 2001-07-09 | 2003-10-17 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그의 구동방법 |
US6504226B1 (en) * | 2001-12-20 | 2003-01-07 | Stmicroelectronics, Inc. | Thin-film transistor used as heating element for microreaction chamber |
FR2839202A1 (fr) * | 2002-04-26 | 2003-10-31 | St Microelectronics Sa | Zone active de circuit integre mos |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5681974A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Manufacture of mos type semiconductor device |
JPS56137650A (en) * | 1980-03-28 | 1981-10-27 | Nec Corp | Manufacture of semiconductor device |
JPS5848936A (ja) * | 1981-09-10 | 1983-03-23 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6054450A (ja) * | 1983-09-05 | 1985-03-28 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS60117391A (ja) * | 1983-11-29 | 1985-06-24 | グローリー工業株式会社 | 循環式自動入出金機 |
JPS60117753A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 半導体装置の製造方法 |
US4543706A (en) * | 1984-02-24 | 1985-10-01 | Gte Laboratories Incorporated | Fabrication of junction field effect transistor with filled grooves |
JPS618945A (ja) * | 1984-06-25 | 1986-01-16 | Nec Corp | 半導体集積回路装置 |
JPS61100944A (ja) * | 1984-10-22 | 1986-05-19 | Seiko Epson Corp | 半導体装置の製造方法 |
US4829019A (en) * | 1987-05-12 | 1989-05-09 | Texas Instruments Incorporated | Method for increasing source/drain to channel stop breakdown and decrease P+/N+ encroachment |
US4876216A (en) * | 1988-03-07 | 1989-10-24 | Applied Micro Circuits Corporation | Semiconductor integrated circuit manufacturing process providing oxide-filled trench isolation of circuit devices |
-
1989
- 1989-10-24 IT IT08364389A patent/IT1236728B/it active IP Right Grant
-
1990
- 1990-10-12 US US07/596,301 patent/US5122473A/en not_active Expired - Lifetime
- 1990-10-22 DE DE69027280T patent/DE69027280T2/de not_active Expired - Fee Related
- 1990-10-22 EP EP90830470A patent/EP0429404B1/de not_active Expired - Lifetime
- 1990-10-24 JP JP2286923A patent/JP3039978B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0429404A3 (de) | 1994-10-12 |
IT1236728B (it) | 1993-03-31 |
EP0429404A2 (de) | 1991-05-29 |
JP3039978B2 (ja) | 2000-05-08 |
IT8983643A0 (it) | 1989-10-24 |
JPH03152954A (ja) | 1991-06-28 |
EP0429404B1 (de) | 1996-06-05 |
DE69027280T2 (de) | 1996-12-05 |
US5122473A (en) | 1992-06-16 |
IT8983643A1 (it) | 1991-04-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |