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DE68923738D1 - Anordnung, die eine optische oder opto-elektronische Vorrichtung enthält. - Google Patents

Anordnung, die eine optische oder opto-elektronische Vorrichtung enthält.

Info

Publication number
DE68923738D1
DE68923738D1 DE68923738T DE68923738T DE68923738D1 DE 68923738 D1 DE68923738 D1 DE 68923738D1 DE 68923738 T DE68923738 T DE 68923738T DE 68923738 T DE68923738 T DE 68923738T DE 68923738 D1 DE68923738 D1 DE 68923738D1
Authority
DE
Germany
Prior art keywords
opto
optical
electronic device
arrangement containing
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68923738T
Other languages
English (en)
Other versions
DE68923738T2 (de
Inventor
Jack Lee Jewell
Samuel Leverte Mccall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE68923738D1 publication Critical patent/DE68923738D1/de
Application granted granted Critical
Publication of DE68923738T2 publication Critical patent/DE68923738T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/218—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference using semi-conducting materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G02F3/02—Optical bistable devices
    • G02F3/024—Optical bistable devices based on non-linear elements, e.g. non-linear Fabry-Perot cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
    • H01S5/3416—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers tunneling through barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE68923738T 1988-06-06 1989-05-25 Anordnung, die eine optische oder opto-elektronische Vorrichtung enthält. Expired - Fee Related DE68923738T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/202,648 US4861976A (en) 1988-06-06 1988-06-06 Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer

Publications (2)

Publication Number Publication Date
DE68923738D1 true DE68923738D1 (de) 1995-09-14
DE68923738T2 DE68923738T2 (de) 1996-02-08

Family

ID=22750749

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923738T Expired - Fee Related DE68923738T2 (de) 1988-06-06 1989-05-25 Anordnung, die eine optische oder opto-elektronische Vorrichtung enthält.

Country Status (5)

Country Link
US (1) US4861976A (de)
EP (1) EP0345971B1 (de)
JP (1) JPH0774876B2 (de)
CA (1) CA1308799C (de)
DE (1) DE68923738T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023673A (en) * 1989-07-21 1991-06-11 At&T Bell Laboratories Semiconductor mesa structured optical processing devices, with added side-surface recombination centers to improve the speed of operation
US5047622A (en) * 1990-06-18 1991-09-10 The United States Of America As Represented By The Secretary Of The Navy Long wavelength infrared detector with heterojunction
US5315128A (en) * 1993-04-30 1994-05-24 At&T Bell Laboratories Photodetector with a resonant cavity
ES2214533T3 (es) * 1995-05-30 2004-09-16 Koninklijke Philips Electronics N.V. Dispositivo de conmutacion y el uso del mismo.
TW319916B (de) * 1995-06-05 1997-11-11 Hewlett Packard Co
GB2320610A (en) * 1996-12-21 1998-06-24 Sharp Kk laser device
US6528827B2 (en) 2000-11-10 2003-03-04 Optolynx, Inc. MSM device and method of manufacturing same
US6999219B2 (en) 2001-01-30 2006-02-14 3Dv Systems, Ltd. Optical modulator
US7545999B2 (en) * 2005-11-01 2009-06-09 Hewlett-Packard Development Company, L.P. Photonic configuration
GB201107674D0 (en) * 2011-05-09 2011-06-22 Univ Surrey Semiconductor laser

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916390A (en) * 1974-12-31 1975-10-28 Ibm Dynamic memory with non-volatile back-up mode
US4151537A (en) * 1976-03-10 1979-04-24 Gte Laboratories Incorporated Gate electrode for MNOS semiconductor memory device
US4143393A (en) * 1977-06-21 1979-03-06 International Business Machines Corporation High field capacitor structure employing a carrier trapping region
US4454524A (en) * 1978-03-06 1984-06-12 Ncr Corporation Device having implantation for controlling gate parasitic action
JPS5642388A (en) * 1979-08-31 1981-04-20 Fujitsu Ltd Semiconductor light emitting device
US4334292A (en) * 1980-05-27 1982-06-08 International Business Machines Corp. Low voltage electrically erasable programmable read only memory
US4535349A (en) * 1981-12-31 1985-08-13 International Business Machines Corporation Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing
US4476477A (en) * 1982-02-23 1984-10-09 At&T Bell Laboratories Graded bandgap multilayer avalanche photodetector with energy step backs
DE3382279D1 (de) * 1983-01-03 1991-06-13 Western Electric Co Ein lichtstrahl zugewandt zu einer integrierten schaltung ist von einem anderen strahl gesteuert.
EP0135551A1 (de) * 1983-02-17 1985-04-03 KENNEDY, William C. Anti-auffahrvorrichtung
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
US4737429A (en) * 1986-06-26 1988-04-12 Xerox Corporation Layered amorphous silicon imaging members

Also Published As

Publication number Publication date
US4861976A (en) 1989-08-29
EP0345971A3 (de) 1991-09-18
JPH0774876B2 (ja) 1995-08-09
EP0345971B1 (de) 1995-08-09
DE68923738T2 (de) 1996-02-08
CA1308799C (en) 1992-10-13
JPH0296720A (ja) 1990-04-09
EP0345971A2 (de) 1989-12-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee