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DE3789424D1 - Vorrichtung um dünne Schichten herzustellen. - Google Patents

Vorrichtung um dünne Schichten herzustellen.

Info

Publication number
DE3789424D1
DE3789424D1 DE87117846T DE3789424T DE3789424D1 DE 3789424 D1 DE3789424 D1 DE 3789424D1 DE 87117846 T DE87117846 T DE 87117846T DE 3789424 T DE3789424 T DE 3789424T DE 3789424 D1 DE3789424 D1 DE 3789424D1
Authority
DE
Germany
Prior art keywords
thin layers
producing thin
producing
layers
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87117846T
Other languages
English (en)
Other versions
DE3789424T2 (de
Inventor
Noboru Arima
Nobuyosi Ogino
Hirosi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP29663786A external-priority patent/JPS63150913A/ja
Priority claimed from JP29663686A external-priority patent/JPS63150912A/ja
Application filed by Shin Etsu Quartz Products Co Ltd, Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Application granted granted Critical
Publication of DE3789424D1 publication Critical patent/DE3789424D1/de
Publication of DE3789424T2 publication Critical patent/DE3789424T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
DE3789424T 1986-12-15 1987-12-02 Vorrichtung um dünne Schichten herzustellen. Expired - Fee Related DE3789424T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29663786A JPS63150913A (ja) 1986-12-15 1986-12-15 薄膜生成装置
JP29663686A JPS63150912A (ja) 1986-12-15 1986-12-15 薄膜生成装置

Publications (2)

Publication Number Publication Date
DE3789424D1 true DE3789424D1 (de) 1994-04-28
DE3789424T2 DE3789424T2 (de) 1994-06-30

Family

ID=26560772

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789424T Expired - Fee Related DE3789424T2 (de) 1986-12-15 1987-12-02 Vorrichtung um dünne Schichten herzustellen.

Country Status (3)

Country Link
US (1) US4926793A (de)
EP (1) EP0270991B1 (de)
DE (1) DE3789424T2 (de)

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US5178681A (en) * 1991-01-29 1993-01-12 Applied Materials, Inc. Suspension system for semiconductor reactors
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FR2725015B1 (fr) * 1994-09-23 1996-12-20 Innovatique Sa Four utilisable pour la nitruration a basse pression d'une piece metallique
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JP2001338878A (ja) * 2000-03-21 2001-12-07 Sharp Corp サセプタおよび表面処理方法
JP4181761B2 (ja) * 2001-06-21 2008-11-19 ジュン キム ヒョン 熱感受性非導電性基板上の半導体フィルムを熱処理するための方法および装置
US20050186723A1 (en) * 2001-06-21 2005-08-25 Kim Hyoung J. Methods and apparatuses for heat treatment of semiconductor films upon thermally susceptible non-conducting substrates
US6793966B2 (en) 2001-09-10 2004-09-21 Howmet Research Corporation Chemical vapor deposition apparatus and method
WO2004072322A1 (ja) * 2003-02-12 2004-08-26 Toyoda Koki Kabushiki Kaisha アモルファス炭素膜の成膜方法および成膜装置
JP4058364B2 (ja) * 2003-03-18 2008-03-05 株式会社日立製作所 半導体製造装置
FR2882064B1 (fr) * 2005-02-17 2007-05-11 Snecma Propulsion Solide Sa Procede de densification de substrats poreux minces par infiltration chimique en phase vapeur et dispositif de chargement de tels substrats
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US8375891B2 (en) * 2006-09-11 2013-02-19 Ulvac, Inc. Vacuum vapor processing apparatus
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DE102008034330A1 (de) * 2008-07-23 2010-01-28 Ionbond Ag Olten CVD-Reaktor zur Abscheidung von Schichten aus einem Reaktionsgasgemisch auf Werkstücken
JP2010073823A (ja) * 2008-09-17 2010-04-02 Tokyo Electron Ltd 成膜装置、成膜方法、及びコンピュータ可読記憶媒体
US9175388B2 (en) * 2008-11-01 2015-11-03 Ultratech, Inc. Reaction chamber with removable liner
US9328417B2 (en) * 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
JP5529634B2 (ja) * 2010-06-10 2014-06-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板の製造方法
US20120272892A1 (en) * 2011-04-07 2012-11-01 Veeco Instruments Inc. Metal-Organic Vapor Phase Epitaxy System and Process
JP6054213B2 (ja) * 2013-03-11 2016-12-27 東京エレクトロン株式会社 支持部材及び半導体製造装置
JP2015133405A (ja) * 2014-01-14 2015-07-23 日立金属株式会社 半導体製造装置
JP2015145317A (ja) * 2014-01-31 2015-08-13 ヤマハ株式会社 カーボンナノチューブの製造装置
KR102148834B1 (ko) * 2015-12-30 2020-08-28 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 밀리세컨드 어닐 시스템을 위한 가스 흐름 제어
CN106756888B (zh) * 2016-11-30 2018-07-13 江苏菲沃泰纳米科技有限公司 一种纳米镀膜设备旋转货架装置
US11339477B2 (en) * 2016-11-30 2022-05-24 Jiangsu Favored Nanotechnology Co., LTD Plasma polymerization coating apparatus and process
CN106622824B (zh) * 2016-11-30 2018-10-12 江苏菲沃泰纳米科技有限公司 一种等离子体聚合涂层装置
US11742186B2 (en) 2017-05-21 2023-08-29 Jiangsu Favored Nanotechnology Co., LTD Multi-functional protective coating
US11041244B2 (en) * 2018-05-04 2021-06-22 Jiangsu Favored Nanotechnology Co., Ltd. Nano-coating protection method for electrical connectors
CN113327884B (zh) * 2020-02-29 2023-10-17 长鑫存储技术有限公司 晶圆支撑件、晶圆加工装置及晶圆加工方法
CN114318543A (zh) * 2021-12-28 2022-04-12 江苏布里其曼科技股份有限公司 半极性氮化镓外延层结构制造系统及方法

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Also Published As

Publication number Publication date
EP0270991A2 (de) 1988-06-15
US4926793A (en) 1990-05-22
EP0270991A3 (en) 1990-06-06
DE3789424T2 (de) 1994-06-30
EP0270991B1 (de) 1994-03-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee