[go: up one dir, main page]

DE3789895D1 - Vorrichtung zur bildung dünner folien. - Google Patents

Vorrichtung zur bildung dünner folien.

Info

Publication number
DE3789895D1
DE3789895D1 DE3789895T DE3789895T DE3789895D1 DE 3789895 D1 DE3789895 D1 DE 3789895D1 DE 3789895 T DE3789895 T DE 3789895T DE 3789895 T DE3789895 T DE 3789895T DE 3789895 D1 DE3789895 D1 DE 3789895D1
Authority
DE
Germany
Prior art keywords
thin films
forming thin
forming
films
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3789895T
Other languages
English (en)
Other versions
DE3789895T2 (de
Inventor
Morito Matsuoka
Ken Ichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE3789895D1 publication Critical patent/DE3789895D1/de
Application granted granted Critical
Publication of DE3789895T2 publication Critical patent/DE3789895T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
DE3789895T 1986-10-11 1987-10-08 Vorrichtung zur bildung dünner folien. Expired - Lifetime DE3789895T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61241740A JP2587924B2 (ja) 1986-10-11 1986-10-11 薄膜形成装置
PCT/JP1987/000759 WO1988002791A1 (en) 1986-10-11 1987-10-08 Thin film formation apparatus

Publications (2)

Publication Number Publication Date
DE3789895D1 true DE3789895D1 (de) 1994-06-30
DE3789895T2 DE3789895T2 (de) 1994-09-15

Family

ID=17078835

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789895T Expired - Lifetime DE3789895T2 (de) 1986-10-11 1987-10-08 Vorrichtung zur bildung dünner folien.

Country Status (5)

Country Link
US (1) US4874497A (de)
EP (1) EP0285668B1 (de)
JP (1) JP2587924B2 (de)
DE (1) DE3789895T2 (de)
WO (1) WO1988002791A1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2673807B2 (ja) * 1987-10-30 1997-11-05 パイオニア株式会社 光磁気記録媒体の製造方法
JP2761893B2 (ja) * 1988-08-12 1998-06-04 キヤノン株式会社 スパッタリング装置
JPH0740569B2 (ja) * 1990-02-27 1995-05-01 エイ・ティ・アンド・ティ・コーポレーション Ｅｃｒプラズマ堆積方法
DE4108001C1 (de) * 1991-03-13 1992-07-09 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
DE4200235C1 (de) * 1992-01-08 1993-05-06 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US5302266A (en) * 1992-03-20 1994-04-12 International Business Machines Corporation Method and apparatus for filing high aspect patterns with metal
KR930021034A (ko) * 1992-03-31 1993-10-20 다니이 아끼오 플라즈마발생방법 및 그 발생장치
JPH07268622A (ja) * 1994-03-01 1995-10-17 Applied Sci & Technol Inc マイクロ波プラズマ付着源
US6033277A (en) * 1995-02-13 2000-03-07 Nec Corporation Method for forming a field emission cold cathode
US6784080B2 (en) 1995-10-23 2004-08-31 Matsushita Electric Industrial Co., Ltd. Method of manufacturing semiconductor device by sputter doping
JP3862305B2 (ja) * 1995-10-23 2006-12-27 松下電器産業株式会社 不純物の導入方法及びその装置、並びに半導体装置の製造方法
JP2904263B2 (ja) * 1995-12-04 1999-06-14 日本電気株式会社 スパッタ装置
JP3944946B2 (ja) * 1997-04-25 2007-07-18 株式会社島津製作所 薄膜形成装置
JP3608416B2 (ja) 1999-02-02 2005-01-12 日新電機株式会社 プラズマ源
US6342132B1 (en) 1999-10-29 2002-01-29 International Business Machines Corporation Method of controlling gas density in an ionized physical vapor deposition apparatus
DE10104611A1 (de) * 2001-02-02 2002-08-14 Bosch Gmbh Robert Vorrichtung zur keramikartigen Beschichtung eines Substrates
US7294283B2 (en) * 2001-04-20 2007-11-13 Applied Process Technologies, Inc. Penning discharge plasma source
ATE536627T1 (de) 2001-04-20 2011-12-15 Gen Plasma Inc Magnetspiegelplasmaquelle
WO2005028697A1 (en) * 2003-09-12 2005-03-31 Applied Process Technologies, Inc. Magnetic mirror plasma source and method using same
JP4535732B2 (ja) * 2004-01-07 2010-09-01 株式会社小松製作所 光源装置及びそれを用いた露光装置
MX350703B (es) 2009-05-13 2017-09-14 Sio2 Medical Products Inc Metodo de gasificacion para inspeccionar una superficie revestida.
WO2013170052A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
JP5774778B2 (ja) * 2011-06-09 2015-09-09 コリア ベーシック サイエンス インスティテュート プラズマ発生源、スパッタリング装置、中性粒子ビーム発生源及び薄膜蒸着システム
JP6095678B2 (ja) 2011-11-11 2017-03-15 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 薬剤パッケージ用の不動態化、ｐＨ保護又は滑性皮膜、被覆プロセス及び装置
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
US20150297800A1 (en) 2012-07-03 2015-10-22 Sio2 Medical Products, Inc. SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS
EP2914762B1 (de) 2012-11-01 2020-05-13 SiO2 Medical Products, Inc. Verfahren zur inspektion einer beschichtung
US9903782B2 (en) 2012-11-16 2018-02-27 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
JP6382830B2 (ja) 2012-11-30 2018-08-29 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 医療シリンジ、カートリッジ等上でのｐｅｃｖｄ堆積の均一性制御
WO2014134577A1 (en) 2013-03-01 2014-09-04 Sio2 Medical Products, Inc. Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
CN105392916B (zh) 2013-03-11 2019-03-08 Sio2医药产品公司 涂布包装材料
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US20160017490A1 (en) 2013-03-15 2016-01-21 Sio2 Medical Products, Inc. Coating method
EP3122917B1 (de) 2014-03-28 2020-05-06 SiO2 Medical Products, Inc. Antistatische beschichtungen für kunststoffbehälter
BR112018003051B1 (pt) 2015-08-18 2022-12-06 Sio2 Medical Products, Inc Tubo de coleta de sangue submetido a vácuo
CN108551716B (zh) * 2018-07-06 2024-11-19 中国科学技术大学 一种等离子体生成设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
EP0103461B1 (de) * 1982-09-10 1988-11-17 Nippon Telegraph And Telephone Corporation Vorrichtung und Verfahren zum Auftragen mittels Plasma
JPS5953680A (ja) * 1982-09-21 1984-03-28 Teijin Ltd スパツタ装置
JPS59145564A (ja) * 1983-02-09 1984-08-21 Matsushita Electronics Corp 半導体集積装置
JPH0627323B2 (ja) * 1983-12-26 1994-04-13 株式会社日立製作所 スパツタリング方法及びその装置
EP0173164B1 (de) * 1984-08-31 1988-11-09 Hitachi, Ltd. Aufstäuben mittels Mikrowellen
JPH0660392B2 (ja) * 1986-03-24 1994-08-10 日本電信電話株式会社 薄膜形成装置
JPH07107189B2 (ja) * 1986-03-24 1995-11-15 日本電信電話株式会社 薄膜形成装置
JPH0689464B2 (ja) * 1986-03-26 1994-11-09 日本電信電話株式会社 イオン源
JPH06187869A (ja) * 1992-12-17 1994-07-08 Sekisui Chem Co Ltd ソーラー／有線電源兼用リモコンスイッチ

Also Published As

Publication number Publication date
EP0285668A4 (en) 1991-01-30
WO1988002791A1 (en) 1988-04-21
JPS6396267A (ja) 1988-04-27
US4874497A (en) 1989-10-17
DE3789895T2 (de) 1994-09-15
EP0285668B1 (de) 1994-05-25
EP0285668A1 (de) 1988-10-12
JP2587924B2 (ja) 1997-03-05

Similar Documents

Publication Publication Date Title
DE3789895D1 (de) Vorrichtung zur bildung dünner folien.
DE3789424D1 (de) Vorrichtung um dünne Schichten herzustellen.
DE3483289D1 (de) Vorrichtung zur kontrollierten freigabe.
DE3889914D1 (de) Vorrichtung zur isolierung.
DE3786263D1 (de) Vorrichtung zur plasmaphorese.
DE69109856D1 (de) Vorrichtung zur multidimensionalen informationseingabe.
DE3772582D1 (de) Verfahren zur herstellungvon poroese polyolefinfolien.
DE3785379D1 (de) Vorrichtung zur entnahme von gewebeproben.
DE3877022D1 (de) Vorrichtung fuer cervicale cytologie.
DE68909988D1 (de) Vorrichtung zur kontinuierlichen Vacuumbeschichtung.
DE68923324D1 (de) Vorrichtung zur Bildverarbeitung.
DE68913392D1 (de) Vorrichtung zur Entnahme von Kernproben.
DE3786273D1 (de) Vorrichtung zur bestueckung mit chips.
DE3871165D1 (de) Vorrichtung zur genauen positionierung.
DE3776771D1 (de) Vorrichtung zur kursanzeige.
ATA97079A (de) Vorrichtung zur herstellung homogener platten bzw.baender aus gipsschlaemmen
DE69502585D1 (de) Vorrichtung zur herstellung von folien
DE68910047D1 (de) Vorrichtung zur Molkekristallisierung.
DE68907058D1 (de) Vorrichtung zur beschichtung.
DE3876205D1 (de) Vorrichtung zur bildung duenner filme.
DE3782653D1 (de) Geraet zur bilderkennung.
DE3751435D1 (de) Vorrichtung zur Kursanzeige.
DE3788294D1 (de) Verfahren und Gerät zur Filmherstellung.
DE3678850D1 (de) Vorrichtung zur bildverarbeitung.
DE3578437D1 (de) Vorrichtung zur bedampfung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition