DE68918032D1 - UV-löschbarer EPROM mit redundanter Schaltung. - Google Patents

UV-löschbarer EPROM mit redundanter Schaltung.

Info

Publication number: DE68918032D1
Authority: DE; Germany
Prior art keywords: redundant circuit; erasable eprom; eprom; erasable; redundant
Prior art date: 1988-09-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE68918032T

Other languages

English (en)

Other versions

DE68918032T2 (de

Inventor

Yasushi C O Nec Corpo Yamagata

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-09-22

Filing date

1989-09-22

Publication date

1994-10-13

1989-09-22 Application filed by NEC Corp filed Critical NEC Corp

1994-10-13 Publication of DE68918032D1 publication Critical patent/DE68918032D1/de

1995-05-04 Application granted granted Critical

1995-05-04 Publication of DE68918032T2 publication Critical patent/DE68918032T2/de

2009-09-23 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels

DE68918032T 1988-09-22 1989-09-22 UV-löschbarer EPROM mit redundanter Schaltung. Expired - Fee Related DE68918032T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP63239215A JPH0777239B2 (ja)	1988-09-22	1988-09-22	浮遊ゲート型不揮発性半導体記憶装置

Publications (2)

Publication Number	Publication Date
DE68918032D1 true DE68918032D1 (de)	1994-10-13
DE68918032T2 DE68918032T2 (de)	1995-05-04

Family

ID=17041457

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE68918032T Expired - Fee Related DE68918032T2 (de)	1988-09-22	1989-09-22	UV-löschbarer EPROM mit redundanter Schaltung.

Country Status (4)

Country	Link
US (1)	US5070378A (de)
EP (1)	EP0360288B1 (de)
JP (1)	JPH0777239B2 (de)
DE (1)	DE68918032T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5523968A (en) *	1988-05-07	1996-06-04	Seiko Epson Corporation	IC semiconductor memory devices with maintained stable operation and lower operating current characteristics
US5278428A (en) *	1990-06-28	1994-01-11	Casio Computer Co., Ltd.	Thin film memory cell
US5311462A (en) *	1991-12-19	1994-05-10	Intel Corporation	Physical placement of content addressable memories
IL106513A (en)	1992-07-31	1997-03-18	Hughes Aircraft Co	Integrated circuit security system and method with implanted interconnections
US5783846A (en) *	1995-09-22	1998-07-21	Hughes Electronics Corporation	Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering
JP2980012B2 (ja) *	1995-10-16	1999-11-22	日本電気株式会社	不揮発性半導体記憶装置
JP3001454B2 (ja) *	1997-04-23	2000-01-24	日本電気アイシーマイコンシステム株式会社	半導体装置
US5973375A (en) *	1997-06-06	1999-10-26	Hughes Electronics Corporation	Camouflaged circuit structure with step implants
US6091652A (en) *	1998-12-11	2000-07-18	Lsi Logic Corporation	Testing semiconductor devices for data retention
US6396368B1 (en)	1999-11-10	2002-05-28	Hrl Laboratories, Llc	CMOS-compatible MEM switches and method of making
US7217977B2 (en)	2004-04-19	2007-05-15	Hrl Laboratories, Llc	Covert transformation of transistor properties as a circuit protection method
US6815816B1 (en)	2000-10-25	2004-11-09	Hrl Laboratories, Llc	Implanted hidden interconnections in a semiconductor device for preventing reverse engineering
US6791191B2 (en)	2001-01-24	2004-09-14	Hrl Laboratories, Llc	Integrated circuits protected against reverse engineering and method for fabricating the same using vias without metal terminations
US7294935B2 (en) *	2001-01-24	2007-11-13	Hrl Laboratories, Llc	Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
US6774413B2 (en) *	2001-06-15	2004-08-10	Hrl Laboratories, Llc	Integrated circuit structure with programmable connector/isolator
US6740942B2 (en)	2001-06-15	2004-05-25	Hrl Laboratories, Llc.	Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact
TW507369B (en) *	2001-10-29	2002-10-21	Macronix Int Co Ltd	Silicon nitride read only memory structure for preventing antenna effect
US6744117B2 (en) *	2002-02-28	2004-06-01	Motorola, Inc.	High frequency semiconductor device and method of manufacture
US6897535B2 (en)	2002-05-14	2005-05-24	Hrl Laboratories, Llc	Integrated circuit with reverse engineering protection
US7049667B2 (en)	2002-09-27	2006-05-23	Hrl Laboratories, Llc	Conductive channel pseudo block process and circuit to inhibit reverse engineering
US6979606B2 (en)	2002-11-22	2005-12-27	Hrl Laboratories, Llc	Use of silicon block process step to camouflage a false transistor
AU2003293540A1 (en)	2002-12-13	2004-07-09	Raytheon Company	Integrated circuit modification using well implants
US7242063B1 (en)	2004-06-29	2007-07-10	Hrl Laboratories, Llc	Symmetric non-intrusive and covert technique to render a transistor permanently non-operable
US8168487B2 (en)	2006-09-28	2012-05-01	Hrl Laboratories, Llc	Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS58197777A (ja) *	1982-05-12	1983-11-17	Mitsubishi Electric Corp	半導体不揮発性記憶装置
JPS616868A (ja) *	1984-06-20	1986-01-13	Nec Corp	Ｍｉｓ型電界効果半導体装置
JPS6149475A (ja) *	1984-08-17	1986-03-11	Matsushita Electronics Corp	紫外線照射型半導体装置
JPS6236869A (ja) *	1985-08-12	1987-02-17	Toshiba Corp	不揮発性半導体記憶装置
US4805138A (en) *	1985-08-23	1989-02-14	Texas Instruments Incorporated	An unerasable eprom cell
JPS62143476A (ja) *	1985-12-18	1987-06-26	Fujitsu Ltd	半導体記憶装置
US4758869A (en) *	1986-08-29	1988-07-19	Waferscale Integration, Inc.	Nonvolatile floating gate transistor structure
JPH061840B2 (ja) *	1987-07-08	1994-01-05	日本電気株式会社	光遮へい型ｕｐｒｏｍ

1988
- 1988-09-22 JP JP63239215A patent/JPH0777239B2/ja not_active Expired - Fee Related
1989
- 1989-09-22 DE DE68918032T patent/DE68918032T2/de not_active Expired - Fee Related
- 1989-09-22 EP EP89117585A patent/EP0360288B1/de not_active Expired - Lifetime
1991
- 1991-03-28 US US07/679,146 patent/US5070378A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0360288A2 (de)	1990-03-28
US5070378A (en)	1991-12-03
JPH0777239B2 (ja)	1995-08-16
EP0360288B1 (de)	1994-09-07
DE68918032T2 (de)	1995-05-04
EP0360288A3 (en)	1990-10-31
JPH0287577A (ja)	1990-03-28

Publication	Publication Date	Title
DE68918032D1 (de)	1994-10-13	UV-löschbarer EPROM mit redundanter Schaltung.
FI892714A0 (fi)	1989-06-02	Rekombinant-coccidiosisvaccin.
NL191164C (nl)	1995-02-16	Aanstuurschakeling.
NO891590L (no)	1989-10-20	Roerkoplingsanordning.
DE3879333D1 (de)	1993-04-22	Halbleiteranordnung mit mehrschichtleiter.
FI880218A (fi)	1989-07-20	Oeppnings- och staengningsanordning foer taklucka i fordon.
DE68924173D1 (de)	1995-10-12	System mit doppelter referenzschiene.
NO892816D0 (no)	1989-07-07	Flerlagstruktur.
NO903622L (no)	1991-02-18	Flersjiktstransduser med paasveisete kontaktforbindelser.
DE68918640D1 (de)	1994-11-10	Schalter mit Voralarm.
FI895446A0 (fi)	1989-11-15	Substituerade oxadiaminobutaner.
FI892398A (fi)	1989-11-20	Substituerade dibensotiofener.
DE58903035D1 (de)	1993-01-28	Haemodialysevorrichtung mit entlueftungseinrichtung.
FI882194A0 (fi)	1988-05-11	Mellanlagringssystem foer glasskivpar i en vindruteproduktionslinje.
DE68919284D1 (de)	1994-12-15	Schalter mit Voralarm.
FI881581A (fi)	1989-10-14	Styrsystem i hydrauliskt manoeverorgan.
FI893144A0 (fi)	1989-06-28	Substituerade azacyklohexylderivat.
NO892082L (no)	1989-11-27	Bicykliske forbindelser.
FI881461L (fi)	1989-09-30	Kontaktlaminat.
FI880729A0 (fi)	1988-02-16	Fuktbestaendiga hudvaordskompositioner.
FI880505A0 (fi)	1988-02-03	Skarvar i stockkonstruktioner.
FI882259A0 (fi)	1988-05-13	Fleretageinlopslaoda i pappersmaskin.
FI881041A0 (fi)	1988-03-07	Baerkonstruktion i roterande trumma.
FI881555A0 (fi)	1988-04-05	Behandlingsanordning foer hushaollsvatten foer tryckvattenanlaeggningar i smaofastighet.
FI880648A0 (fi)	1988-02-12	Stomblad i lastbil.

Legal Events

Date	Code	Title	Description
1995-10-05	8364	No opposition during term of opposition
2004-07-08	8339	Ceased/non-payment of the annual fee