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DE68915014D1 - Gerät zur Bildung dünner Schichten und durch Mikrowellen-Zerstäubung arbeitende Ionenquelle. - Google Patents

Gerät zur Bildung dünner Schichten und durch Mikrowellen-Zerstäubung arbeitende Ionenquelle.

Info

Publication number
DE68915014D1
DE68915014D1 DE68915014T DE68915014T DE68915014D1 DE 68915014 D1 DE68915014 D1 DE 68915014D1 DE 68915014 T DE68915014 T DE 68915014T DE 68915014 T DE68915014 T DE 68915014T DE 68915014 D1 DE68915014 D1 DE 68915014D1
Authority
DE
Germany
Prior art keywords
ion source
thin layers
forming thin
source operating
atomization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68915014T
Other languages
English (en)
Other versions
DE68915014T2 (de
Inventor
Morito Matsuoka
Ken Ichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63025601A external-priority patent/JP2552697B2/ja
Priority claimed from JP63025602A external-priority patent/JP2602267B2/ja
Priority claimed from JP63044214A external-priority patent/JP2552700B2/ja
Priority claimed from JP63044215A external-priority patent/JP2552701B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE68915014D1 publication Critical patent/DE68915014D1/de
Application granted granted Critical
Publication of DE68915014T2 publication Critical patent/DE68915014T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
DE68915014T 1988-02-08 1989-02-08 Gerät zur Bildung dünner Schichten und durch Mikrowellen-Zerstäubung arbeitende Ionenquelle. Expired - Lifetime DE68915014T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP63025601A JP2552697B2 (ja) 1988-02-08 1988-02-08 イオン源
JP63025602A JP2602267B2 (ja) 1988-02-08 1988-02-08 プラズマ生成装置およびプラズマを利用した薄膜形成装置
JP63044214A JP2552700B2 (ja) 1988-02-29 1988-02-29 プラズマ生成装置およびプラズマを利用した薄膜形成装置
JP63044215A JP2552701B2 (ja) 1988-02-29 1988-02-29 イオン源

Publications (2)

Publication Number Publication Date
DE68915014D1 true DE68915014D1 (de) 1994-06-09
DE68915014T2 DE68915014T2 (de) 1994-12-08

Family

ID=27458348

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915014T Expired - Lifetime DE68915014T2 (de) 1988-02-08 1989-02-08 Gerät zur Bildung dünner Schichten und durch Mikrowellen-Zerstäubung arbeitende Ionenquelle.

Country Status (4)

Country Link
US (1) US4911814A (de)
EP (1) EP0328076B1 (de)
KR (1) KR920003790B1 (de)
DE (1) DE68915014T2 (de)

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US5022977A (en) * 1986-09-29 1991-06-11 Nippon Telegraph And Telephone Corporation Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus
US5053678A (en) * 1988-03-16 1991-10-01 Hitachi, Ltd. Microwave ion source
DE59009549D1 (de) * 1989-06-05 1995-09-28 Balzers Hochvakuum Verfahren zum Kühlen von Targets sowie Kühleinrichtung für Targets.
JP2573702B2 (ja) * 1989-12-19 1997-01-22 三菱電機株式会社 プラズマエッチング装置
US5142198A (en) * 1989-12-21 1992-08-25 Applied Science And Technology, Inc. Microwave reactive gas discharge device
IT1238337B (it) * 1990-01-23 1993-07-12 Cons Ric Microelettronica Dispositivo per la ionizzazione di metalli ad alta temperatura di fusione, utilizzabile su impiantatori ionici del tipo impiegante sorgenti di ioni di tipo freeman o assimilabili
KR930004713B1 (ko) * 1990-06-18 1993-06-03 삼성전자 주식회사 변조방식을 이용한 플라즈마 발생장치 및 방법
US5274306A (en) * 1990-08-31 1993-12-28 Kaufman & Robinson, Inc. Capacitively coupled radiofrequency plasma source
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
US5198725A (en) * 1991-07-12 1993-03-30 Lam Research Corporation Method of producing flat ecr layer in microwave plasma device and apparatus therefor
US5256938A (en) * 1992-02-28 1993-10-26 The United States Of America As Represented By The Department Of Energy ECR ion source with electron gun
US5302266A (en) * 1992-03-20 1994-04-12 International Business Machines Corporation Method and apparatus for filing high aspect patterns with metal
WO1995000677A1 (en) * 1993-06-17 1995-01-05 Deposition Sciences, Inc. Sputtering device
JPH07268622A (ja) * 1994-03-01 1995-10-17 Applied Sci & Technol Inc マイクロ波プラズマ付着源
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
DE19540794A1 (de) * 1995-11-02 1997-05-07 Leybold Ag Vorrichtung zum Beschichten eines Substrats von einem elektrisch leitfähigen Target
EP0799903A3 (de) 1996-04-05 1999-11-17 Applied Materials, Inc. Verfahren zum Sputtern eines Metalls auf ein Substrat und Vorrichtung zur Behandlung von Halbleitern
JPH10144668A (ja) * 1996-11-14 1998-05-29 Tokyo Electron Ltd プラズマ処理方法
JP3650248B2 (ja) * 1997-03-19 2005-05-18 東京エレクトロン株式会社 プラズマ処理装置
US20010049196A1 (en) * 1997-09-09 2001-12-06 Roger Patrick Apparatus for improving etch uniformity and methods therefor
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
JP4947834B2 (ja) * 1997-11-26 2012-06-06 アプライド マテリアルズ インコーポレイテッド ダメージフリー被覆刻設堆積法
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
FR2774251B1 (fr) * 1998-01-26 2000-02-25 Commissariat Energie Atomique Source a plasma micro-onde lineaire en aimants permanents
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6197165B1 (en) 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
JP3608416B2 (ja) * 1999-02-02 2005-01-12 日新電機株式会社 プラズマ源
JP4351755B2 (ja) * 1999-03-12 2009-10-28 キヤノンアネルバ株式会社 薄膜作成方法および薄膜作成装置
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
DE10060002B4 (de) * 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
US20030066486A1 (en) * 2001-08-30 2003-04-10 Applied Materials, Inc. Microwave heat shield for plasma chamber
JP4166455B2 (ja) * 2001-10-01 2008-10-15 株式会社半導体エネルギー研究所 偏光フィルム及び発光装置
JP4024510B2 (ja) * 2001-10-10 2007-12-19 株式会社半導体エネルギー研究所 記録媒体、および基材
US7527713B2 (en) * 2004-05-26 2009-05-05 Applied Materials, Inc. Variable quadruple electromagnet array in plasma processing
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US20060081467A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima Systems and methods for magnetron deposition
GB2419894B (en) * 2004-10-22 2009-08-26 Plasma Quest Ltd Sputtering system
US20070205096A1 (en) * 2006-03-06 2007-09-06 Makoto Nagashima Magnetron based wafer processing
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
US8308915B2 (en) * 2006-09-14 2012-11-13 4D-S Pty Ltd. Systems and methods for magnetron deposition
US20080196243A1 (en) * 2006-11-14 2008-08-21 Texas Instruments Deutschland Gnbh Device for Coupling Electromagnetic Radiation from a Source into a Microwave Chamber
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
EE200900010A (et) * 2008-02-13 2009-10-15 Krimanov Aleksander Ioonide voolu juhtimise meetod ja seade
US7777151B2 (en) * 2008-02-14 2010-08-17 Adventix Technologies Inc. Portable plasma sterilizer
CN102471877A (zh) * 2009-07-17 2012-05-23 株式会社爱发科 成膜装置以及成膜方法
WO2013120097A1 (en) * 2012-02-09 2013-08-15 Fluxion Inc. Compact, filtered ion source
US9297063B2 (en) * 2012-04-26 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Plasma potential modulated ion implantation system
KR20140019577A (ko) * 2012-08-06 2014-02-17 삼성디스플레이 주식회사 박막 증착 장치 및 이를 이용한 박막 증착 방법
KR102235442B1 (ko) * 2014-06-30 2021-04-01 삼성전자주식회사 스퍼터링 장치 및 방법
US10128083B2 (en) * 2016-06-01 2018-11-13 Vebco Instruments Inc. Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas
DE102018211649A1 (de) * 2018-07-12 2020-01-16 Robert Bosch Gmbh Verfahren zum Beschichten wenigstens eines metallischen Bauteils
JP7245661B2 (ja) * 2019-01-30 2023-03-24 Ｊｓｗアフティ株式会社 ターゲットおよび成膜装置並びに成膜対象物の製造方法

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* Cited by examiner, † Cited by third party
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JPS5943546B2 (ja) * 1981-05-26 1984-10-23 日本真空技術株式会社 スパツタリング装置
JPS6050167A (ja) * 1983-08-26 1985-03-19 Nippon Telegr & Teleph Corp <Ntt> プラズマ付着装置
DE3378508D1 (en) * 1982-09-10 1988-12-22 Nippon Telegraph & Telephone Plasma deposition method and apparatus
EP0106497B1 (de) * 1982-09-10 1988-06-01 Nippon Telegraph And Telephone Corporation Ionenflutgerät
CH659484A5 (de) * 1984-04-19 1987-01-30 Balzers Hochvakuum Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung.
JPH07107189B2 (ja) * 1986-03-24 1995-11-15 日本電信電話株式会社 薄膜形成装置
JPH0689464B2 (ja) * 1986-03-26 1994-11-09 日本電信電話株式会社 イオン源
DE3774098D1 (de) * 1986-12-29 1991-11-28 Sumitomo Metal Ind Plasmageraet.
JPH066786B2 (ja) * 1987-03-17 1994-01-26 日本電信電話株式会社 薄膜形成装置

Also Published As

Publication number Publication date
EP0328076B1 (de) 1994-05-04
US4911814A (en) 1990-03-27
KR890013820A (ko) 1989-09-26
EP0328076A2 (de) 1989-08-16
DE68915014T2 (de) 1994-12-08
KR920003790B1 (en) 1992-05-14
EP0328076A3 (en) 1990-08-22

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Legal Events

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8364 No opposition during term of opposition