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DE60238459D1 - Einzelelektron-Speicheranordnung und Verfahren zur Herstellung - Google Patents

Einzelelektron-Speicheranordnung und Verfahren zur Herstellung

Info

Publication number
DE60238459D1
DE60238459D1 DE60238459T DE60238459T DE60238459D1 DE 60238459 D1 DE60238459 D1 DE 60238459D1 DE 60238459 T DE60238459 T DE 60238459T DE 60238459 T DE60238459 T DE 60238459T DE 60238459 D1 DE60238459 D1 DE 60238459D1
Authority
DE
Germany
Prior art keywords
manufacture
storage device
single electron
electron storage
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60238459T
Other languages
English (en)
Inventor
Soo-Doo Chae
Byong-Man Kim
Moon-Kyung Kim
Hee-Soon Chae
Won-Il Ryu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60238459D1 publication Critical patent/DE60238459D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/688—Floating-gate IGFETs programmed by two single electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
DE60238459T 2001-05-10 2002-01-04 Einzelelektron-Speicheranordnung und Verfahren zur Herstellung Expired - Lifetime DE60238459D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2001-0025569A KR100408520B1 (ko) 2001-05-10 2001-05-10 게이트 전극과 단전자 저장 요소 사이에 양자점을구비하는 단전자 메모리 소자 및 그 제조 방법

Publications (1)

Publication Number Publication Date
DE60238459D1 true DE60238459D1 (de) 2011-01-13

Family

ID=19709303

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60238459T Expired - Lifetime DE60238459D1 (de) 2001-05-10 2002-01-04 Einzelelektron-Speicheranordnung und Verfahren zur Herstellung

Country Status (6)

Country Link
US (2) US6670670B2 (de)
EP (1) EP1256986B1 (de)
JP (1) JP2002343938A (de)
KR (1) KR100408520B1 (de)
CN (1) CN1189943C (de)
DE (1) DE60238459D1 (de)

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KR100459895B1 (ko) * 2002-02-09 2004-12-04 삼성전자주식회사 퀀텀 도트를 가지는 메모리 소자 및 그 제조방법
EP2192617B1 (de) * 2002-05-22 2012-02-01 Fujitsu Limited Quantum-Halbleiteranordnung und Verfahren zur Herstellung
KR100558287B1 (ko) * 2002-12-10 2006-03-10 한국전자통신연구원 단전자 소자, 그 제조 방법 및 단전자 소자와 ｍｏｓ트랜지스터를 동시에 형성하는 제조방법
KR100885910B1 (ko) * 2003-04-30 2009-02-26 삼성전자주식회사 게이트 적층물에 ｏｈａ막을 구비하는 비 휘발성 반도체메모리 장치 및 그 제조방법
US7045851B2 (en) * 2003-06-20 2006-05-16 International Business Machines Corporation Nonvolatile memory device using semiconductor nanocrystals and method of forming same
KR100939767B1 (ko) 2003-06-25 2010-01-29 주식회사 하이닉스반도체 단일전자소자의 제조방법
US6780742B1 (en) * 2003-07-03 2004-08-24 Texas Instruments Incorporated Undulated moat for reducing contact resistance
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DE102004003363A1 (de) * 2004-01-22 2005-08-18 Infineon Technologies Ag Verfahren zum Herstellen von Nanospeicherelementen zur Ladungsspeicherung
US7595528B2 (en) * 2004-03-10 2009-09-29 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
EP1723676A4 (de) * 2004-03-10 2009-04-15 Nanosys Inc Speicherbausteine mit nano-fähigkeit und anisotrope ladungsträger-arrays
US20050202615A1 (en) * 2004-03-10 2005-09-15 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
DE102004022618B4 (de) * 2004-05-07 2011-04-14 Qimonda Ag Verfahren zur Herstellung einer Speicherzelle mit nanopunktförmigen Speicherbereichen in einem Substrat
CN100508167C (zh) * 2004-11-30 2009-07-01 富士通微电子株式会社 半导体存储器件及其制造方法
KR100687100B1 (ko) * 2005-05-11 2007-02-26 삼성전자주식회사 나노선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
CN100356585C (zh) * 2005-07-15 2007-12-19 清华大学 纵向量子点－浮栅尖端结构、制备方法和存储器
KR100641075B1 (ko) * 2005-09-20 2006-11-01 삼성전자주식회사 트랜지스터, 이의 형성 방법, 이를 포함하는 반도체 장치및 그 제조 방법
KR100745400B1 (ko) * 2006-03-08 2007-08-02 삼성전자주식회사 게이트 구조 및 이를 형성하는 방법, 비휘발성 메모리 장치및 이의 제조 방법
US7445984B2 (en) * 2006-07-25 2008-11-04 Freescale Semiconductor, Inc. Method for removing nanoclusters from selected regions
US7432158B1 (en) * 2006-07-25 2008-10-07 Freescale Semiconductor, Inc. Method for retaining nanocluster size and electrical characteristics during processing
JP4772649B2 (ja) * 2006-11-30 2011-09-14 株式会社東芝 半導体記憶素子の製造方法
US7847341B2 (en) 2006-12-20 2010-12-07 Nanosys, Inc. Electron blocking layers for electronic devices
US20080150009A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US20080150003A1 (en) * 2006-12-20 2008-06-26 Jian Chen Electron blocking layers for electronic devices
US8686490B2 (en) 2006-12-20 2014-04-01 Sandisk Corporation Electron blocking layers for electronic devices
US20080150004A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
JP4594971B2 (ja) * 2007-01-19 2010-12-08 国立大学法人広島大学 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドットの製造方法
CN101281930B (zh) * 2007-04-04 2011-09-28 江国庆 光信号移转元件
KR100877100B1 (ko) * 2007-04-16 2009-01-09 주식회사 하이닉스반도체 비휘발성 메모리 소자 제조 방법
JP2008288346A (ja) * 2007-05-16 2008-11-27 Hiroshima Univ 半導体素子
KR100966008B1 (ko) * 2007-09-14 2010-06-24 충북대학교 산학협력단 상온동작 단전자 소자 및 그 제조방법
KR20090053140A (ko) * 2007-11-22 2009-05-27 삼성전자주식회사 반도체 소자 및 그 형성 방법
US9153594B2 (en) * 2008-01-09 2015-10-06 Faquir C. Jain Nonvolatile memory and three-state FETs using cladded quantum dot gate structure
US7829935B2 (en) * 2008-03-26 2010-11-09 Hiroshima University Semiconductor memory, semiconductor memory system using the memory, and method for manufacturing quantum dot used in semiconductor memory
EP2308111B1 (de) 2008-06-17 2021-04-28 National Research Council Of Canada Atomistische quanten-dots
JP4368934B1 (ja) 2009-02-09 2009-11-18 アイランド ジャイアント デベロップメント エルエルピー 液体収容システム、液体収容容器、および液体導出制御方法
US9679929B2 (en) * 2012-10-12 2017-06-13 Samsung Electronics Co., Ltd. Binary image sensors including quantum dots and unit pixels thereof
US9634105B2 (en) 2015-01-14 2017-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Silicon nano-tip thin film for flash memory cells
EP3147954A1 (de) * 2015-09-22 2017-03-29 Nokia Technologies Oy Fotodetektor mit leitfähigem kanal aus einem zweidimensionalen material und dessen herstellungsverfahren
KR20220026413A (ko) 2020-08-25 2022-03-04 에스케이하이닉스 주식회사 반도체 메모리 장치, 이의 제조 방법 및 동작 방법

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JPH0936317A (ja) * 1995-07-17 1997-02-07 Matsushita Electric Ind Co Ltd メモリ素子およびその製造方法
US5714766A (en) * 1995-09-29 1998-02-03 International Business Machines Corporation Nano-structure memory device
EP0843360A1 (de) * 1996-11-15 1998-05-20 Hitachi Europe Limited Speicheranordnung
US6060743A (en) * 1997-05-21 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
KR100276431B1 (ko) * 1997-12-22 2000-12-15 정선종 규칙적인 실리콘 양자점 형성방법 및 그를 이용한 초미세 반도체 소자 제작방법
JP3769120B2 (ja) * 1998-05-08 2006-04-19 株式会社東芝 半導体素子
JP3743745B2 (ja) * 1998-08-31 2006-02-08 株式会社東芝 半導体素子
KR100325298B1 (ko) * 1999-06-01 2002-02-21 . 비휘발성 메모리 소자의 제조 방법
KR100360496B1 (ko) * 2000-04-15 2002-11-13 삼성전자 주식회사 이중 양자점 응용 단일 전자 다치 메모리 및 그 구동방법

Also Published As

Publication number Publication date
CN1385904A (zh) 2002-12-18
US20040076032A1 (en) 2004-04-22
EP1256986A3 (de) 2004-04-21
KR20020085989A (ko) 2002-11-18
US6946346B2 (en) 2005-09-20
CN1189943C (zh) 2005-02-16
US20020167002A1 (en) 2002-11-14
US6670670B2 (en) 2003-12-30
JP2002343938A (ja) 2002-11-29
EP1256986A2 (de) 2002-11-13
EP1256986B1 (de) 2010-12-01
KR100408520B1 (ko) 2003-12-06

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