DE60237310D1 - Verfahren zur nachätz- und beseitigungsrestentfernung an koralfilmen - Google Patents
Verfahren zur nachätz- und beseitigungsrestentfernung an koralfilmenInfo
- Publication number
- DE60237310D1 DE60237310D1 DE60237310T DE60237310T DE60237310D1 DE 60237310 D1 DE60237310 D1 DE 60237310D1 DE 60237310 T DE60237310 T DE 60237310T DE 60237310 T DE60237310 T DE 60237310T DE 60237310 D1 DE60237310 D1 DE 60237310D1
- Authority
- DE
- Germany
- Prior art keywords
- removal
- remedient
- coral
- films
- coral films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/033,644 US6949411B1 (en) | 2001-12-27 | 2001-12-27 | Method for post-etch and strip residue removal on coral films |
PCT/US2002/040987 WO2003058694A1 (en) | 2001-12-27 | 2002-12-20 | Method for post-etch and strip residue removal on coral films |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60237310D1 true DE60237310D1 (de) | 2010-09-23 |
Family
ID=21871596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60237310T Expired - Lifetime DE60237310D1 (de) | 2001-12-27 | 2002-12-20 | Verfahren zur nachätz- und beseitigungsrestentfernung an koralfilmen |
Country Status (9)
Country | Link |
---|---|
US (1) | US6949411B1 (de) |
EP (1) | EP1459363B1 (de) |
JP (1) | JP4317759B2 (de) |
KR (1) | KR100977104B1 (de) |
CN (1) | CN100392814C (de) |
AU (1) | AU2002361829A1 (de) |
DE (1) | DE60237310D1 (de) |
TW (1) | TWI310403B (de) |
WO (1) | WO2003058694A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7067016B1 (en) * | 2003-03-31 | 2006-06-27 | Lam Research Corporation | Chemically assisted mechanical cleaning of MRAM structures |
US6936540B2 (en) * | 2003-09-18 | 2005-08-30 | Micron Technology, Inc. | Method of polishing a semiconductor substrate, post-CMP cleaning process, and method of cleaning residue from registration alignment markings |
KR100720481B1 (ko) * | 2005-11-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US7807219B2 (en) * | 2006-06-27 | 2010-10-05 | Lam Research Corporation | Repairing and restoring strength of etch-damaged low-k dielectric materials |
JP2008060238A (ja) * | 2006-08-30 | 2008-03-13 | Toshiba Corp | 半導体装置の製造方法 |
US7786011B2 (en) * | 2007-01-30 | 2010-08-31 | Lam Research Corporation | Composition and methods for forming metal films on semiconductor substrates using supercritical solvents |
US8617301B2 (en) * | 2007-01-30 | 2013-12-31 | Lam Research Corporation | Compositions and methods for forming and depositing metal films on semiconductor substrates using supercritical solvents |
CN103050374B (zh) * | 2011-10-17 | 2015-11-25 | 中芯国际集成电路制造(北京)有限公司 | 蚀刻后的处理方法 |
CN108054083A (zh) * | 2017-12-13 | 2018-05-18 | 武汉新芯集成电路制造有限公司 | 一种对晶圆表面颗粒物进行去除的方法 |
CN111755319A (zh) * | 2019-03-29 | 2020-10-09 | 中芯集成电路(宁波)有限公司 | 晶圆清洗方法及光刻胶图案化方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3217116B2 (ja) * | 1992-03-06 | 2001-10-09 | 日産化学工業株式会社 | 低表面張力洗浄用組成物 |
JPH07115078A (ja) * | 1993-10-19 | 1995-05-02 | Shimada Phys & Chem Ind Co Ltd | 基板の処理方法およびその装置 |
JP3326642B2 (ja) | 1993-11-09 | 2002-09-24 | ソニー株式会社 | 基板の研磨後処理方法およびこれに用いる研磨装置 |
US5413952A (en) * | 1994-02-02 | 1995-05-09 | Motorola, Inc. | Direct wafer bonded structure method of making |
EP0914216B1 (de) | 1995-10-13 | 2002-03-20 | Lam Research Corporation | VORRICHTUNG ZUR aBGABE VON ZWEI CHEMISCHEN PRODUKTEN DURCH EINE BÜRSTE |
US5575706A (en) | 1996-01-11 | 1996-11-19 | Taiwan Semiconductor Manufacturing Company Ltd. | Chemical/mechanical planarization (CMP) apparatus and polish method |
US6277203B1 (en) * | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
US6218290B1 (en) * | 1998-11-25 | 2001-04-17 | Advanced Micro Devices, Inc. | Copper dendrite prevention by chemical removal of dielectric |
US6130167A (en) * | 1999-03-18 | 2000-10-10 | Taiwan Semiconductor Manufacturing Company | Method of preventing corrosion of a metal structure exposed in a non-fully landed via |
JP4094174B2 (ja) * | 1999-06-04 | 2008-06-04 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US6274478B1 (en) * | 1999-07-13 | 2001-08-14 | Motorola, Inc. | Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
JP4554011B2 (ja) * | 1999-08-10 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
US6623579B1 (en) * | 1999-11-02 | 2003-09-23 | Alien Technology Corporation | Methods and apparatus for fluidic self assembly |
US6187684B1 (en) | 1999-12-09 | 2001-02-13 | Lam Research Corporation | Methods for cleaning substrate surfaces after etch operations |
US6315637B1 (en) * | 2000-01-18 | 2001-11-13 | Advanced Micro Devices, Inc. | Photoresist removal using a polishing tool |
US6482678B1 (en) * | 2000-03-31 | 2002-11-19 | Lam Research Corporation | Wafer preparation systems and methods for preparing wafers |
JP4057762B2 (ja) * | 2000-04-25 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
KR100404560B1 (ko) * | 2001-01-06 | 2003-11-05 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
US20020105057A1 (en) * | 2001-02-02 | 2002-08-08 | Vyvoda Michael A. | Wafer surface that facilitates particle removal |
-
2001
- 2001-12-27 US US10/033,644 patent/US6949411B1/en not_active Expired - Fee Related
-
2002
- 2002-12-18 TW TW091136604A patent/TWI310403B/zh not_active IP Right Cessation
- 2002-12-20 JP JP2003558912A patent/JP4317759B2/ja not_active Expired - Fee Related
- 2002-12-20 DE DE60237310T patent/DE60237310D1/de not_active Expired - Lifetime
- 2002-12-20 EP EP02797461A patent/EP1459363B1/de not_active Expired - Lifetime
- 2002-12-20 WO PCT/US2002/040987 patent/WO2003058694A1/en active Application Filing
- 2002-12-20 KR KR1020047010160A patent/KR100977104B1/ko not_active IP Right Cessation
- 2002-12-20 CN CNB028262689A patent/CN100392814C/zh not_active Expired - Fee Related
- 2002-12-20 AU AU2002361829A patent/AU2002361829A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1459363B1 (de) | 2010-08-11 |
JP4317759B2 (ja) | 2009-08-19 |
EP1459363A1 (de) | 2004-09-22 |
KR20040065312A (ko) | 2004-07-21 |
CN100392814C (zh) | 2008-06-04 |
TW200302271A (en) | 2003-08-01 |
EP1459363A4 (de) | 2007-08-01 |
WO2003058694A1 (en) | 2003-07-17 |
CN1608311A (zh) | 2005-04-20 |
JP2006502559A (ja) | 2006-01-19 |
KR100977104B1 (ko) | 2010-08-23 |
US6949411B1 (en) | 2005-09-27 |
AU2002361829A1 (en) | 2003-07-24 |
TWI310403B (en) | 2009-06-01 |
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