DE60217463D1 - Nichtflüchtige ferroelektrische Zweitransistor-Speicherzelle - Google Patents

Nichtflüchtige ferroelektrische Zweitransistor-Speicherzelle

Info

Publication number: DE60217463D1
Authority: DE; Germany
Prior art keywords: memory cell; transistor memory; volatile ferroelectric; ferroelectric; volatile
Prior art date: 2002-01-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60217463T

Other languages

English (en)

Other versions

DE60217463T2 (de

Inventor

Jong-Jan Lee

Sheng Teng Hsu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-01-31

Filing date

2002-11-22

Publication date

2007-02-22

2002-11-22 Application filed by Sharp Corp filed Critical Sharp Corp

2007-02-22 Application granted granted Critical

2007-02-22 Publication of DE60217463D1 publication Critical patent/DE60217463D1/de

2007-10-11 Publication of DE60217463T2 publication Critical patent/DE60217463T2/de

2022-11-23 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Dram (AREA)
Semiconductor Memories (AREA)

DE60217463T 2002-01-31 2002-11-22 Nichtflüchtige ferroelektrische Zweitransistor-Speicherzelle Expired - Lifetime DE60217463T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US62850		2002-01-31
US10/062,850 US6510073B1 (en)	2002-01-31	2002-01-31	Two transistor ferroelectric non-volatile memory

Publications (2)

Publication Number	Publication Date
DE60217463D1 true DE60217463D1 (de)	2007-02-22
DE60217463T2 DE60217463T2 (de)	2007-10-11

Family

ID=22045239

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE60217463T Expired - Lifetime DE60217463T2 (de)	2002-01-31	2002-11-22	Nichtflüchtige ferroelektrische Zweitransistor-Speicherzelle

Country Status (6)

Country	Link
US (1)	US6510073B1 (de)
EP (1)	EP1333444B1 (de)
JP (1)	JP2003228976A (de)
KR (1)	KR100526724B1 (de)
DE (1)	DE60217463T2 (de)
TW (1)	TW569438B (de)

Families Citing this family (27)

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Publication number	Priority date	Publication date	Assignee	Title
US6711049B1 (en) *	2002-10-28	2004-03-23	Sharp Laboratories Of America, Inc.	One transistor cell FeRAM memory array
JP3988696B2 (ja) *	2003-03-27	2007-10-10	ソニー株式会社	データ読出方法及び半導体記憶装置
US7193880B2 (en) *	2004-06-14	2007-03-20	Texas Instruments Incorporated	Plateline voltage pulsing to reduce storage node disturbance in ferroelectric memory
US7009864B2 (en) *	2003-12-29	2006-03-07	Texas Instruments Incorporated	Zero cancellation scheme to reduce plateline voltage in ferroelectric memory
US8101219B2 (en) *	2004-03-05	2012-01-24	Eggology, Inc.	Apparatus for preparing egg products in a microwave oven
US7133304B2 (en) *	2004-03-22	2006-11-07	Texas Instruments Incorporated	Method and apparatus to reduce storage node disturbance in ferroelectric memory
US6970371B1 (en) *	2004-05-17	2005-11-29	Texas Instruments Incorporated	Reference generator system and methods for reading ferroelectric memory cells using reduced bitline voltages
US7561458B2 (en) *	2006-12-26	2009-07-14	Texas Instruments Incorporated	Ferroelectric memory array for implementing a zero cancellation scheme to reduce plateline voltage in ferroelectric memory
US7920404B2 (en) *	2007-12-31	2011-04-05	Texas Instruments Incorporated	Ferroelectric memory devices with partitioned platelines
WO2011099360A1 (en) *	2010-02-12	2011-08-18	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for driving the same
EP2534679B1 (de) *	2010-02-12	2021-06-16	Semiconductor Energy Laboratory Co., Ltd.	Halbleiterbauelement und verfahren zu dessen ansteuerung
CN102754162B (zh) *	2010-02-19	2015-12-09	株式会社半导体能源研究所	半导体器件及半导体器件的驱动方法
CN102754163B (zh) *	2010-02-19	2015-11-25	株式会社半导体能源研究所	半导体器件
KR101783933B1 (ko)	2010-11-23	2017-10-11	한국전자통신연구원	메모리 셀 및 이를 이용한 메모리 장치
JP6013682B2 (ja) *	2011-05-20	2016-10-25	株式会社半導体エネルギー研究所	半導体装置の駆動方法
US8867256B2 (en) *	2012-09-25	2014-10-21	Palo Alto Research Center Incorporated	Systems and methods for writing and non-destructively reading ferroelectric memories
WO2014157019A1 (en) *	2013-03-25	2014-10-02	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
US10460787B1 (en) *	2018-05-16	2019-10-29	Palo Alto Research Center Incorporated	Selection circuit usable with ferroelectric memory
CN113906562A (zh)	2019-04-08	2022-01-07	开普勒计算公司	掺杂极性层及并入有掺杂极性层的半导体装置
US11205467B2 (en) *	2019-05-09	2021-12-21	Namlab Ggmbh	Ferroelectric memory and logic cell and operation method
CN110415744B (zh) *	2019-07-11	2021-04-16	清华大学	基于铁电晶体管的非易失存储器
US11380695B2 (en) *	2020-10-30	2022-07-05	Ferroelectric Memory Gmbh	Memory cell arrangement and method thereof
US11335391B1 (en)	2020-10-30	2022-05-17	Ferroelectric Memory Gmbh	Memory cell arrangement and method thereof
US11527551B2 (en)	2020-10-30	2022-12-13	Ferroelectric Memory Gmbh	Memory cell arrangements and methods thereof
CN115482859A (zh) *	2021-06-15	2022-12-16	清华大学	数据存储结构及数据存储方法
TWI825878B (zh) *	2022-07-28	2023-12-11	國立陽明交通大學	金屬鐵電金屬場效應電晶體、金屬鐵電金屬場效應電晶體陣列及其操作方法
US12250823B2 (en)	2022-12-16	2025-03-11	Industry-University Cooperation Foundation Hanyang University Erica Campus	Non-volatile memory device and its operating method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5309391A (en) *	1992-10-02	1994-05-03	National Semiconductor Corporation	Symmetrical polarization enhancement in a ferroelectric memory cell
US5753946A (en) *	1995-02-22	1998-05-19	Sony Corporation	Ferroelectric memory
JPH08273373A (ja) *	1995-03-30	1996-10-18	Yamaha Corp	半導体記憶装置とその動作方法
JP2800745B2 (ja) *	1995-11-10	1998-09-21	日本電気株式会社	強誘電体メモリ
US5774392A (en) *	1996-03-28	1998-06-30	Ramtron International Corporation	Bootstrapping circuit utilizing a ferroelectric capacitor
JP2939973B2 (ja) *	1996-06-06	1999-08-25	日本電気株式会社	不揮発性半導体メモリ装置の駆動方法
JP2982692B2 (ja) *	1996-06-06	1999-11-29	日本電気株式会社	不揮発性半導体メモリ装置およびその駆動方法
US5932904A (en)	1997-03-07	1999-08-03	Sharp Laboratories Of America, Inc.	Two transistor ferroelectric memory cell
US6198652B1 (en) *	1998-04-13	2001-03-06	Kabushiki Kaisha Toshiba	Non-volatile semiconductor integrated memory device
JP2001043694A (ja) *	1999-07-30	2001-02-16	Oki Electric Ind Co Ltd	半導体記憶素子
US6449184B2 (en) *	2000-06-19	2002-09-10	Matsushita Electric Industrial Co., Ltd.	Method for driving semiconductor memory

2002
- 2002-01-31 US US10/062,850 patent/US6510073B1/en not_active Expired - Fee Related
- 2002-11-07 JP JP2002324377A patent/JP2003228976A/ja active Pending
- 2002-11-22 EP EP02258065A patent/EP1333444B1/de not_active Expired - Lifetime
- 2002-11-22 DE DE60217463T patent/DE60217463T2/de not_active Expired - Lifetime
- 2002-11-29 TW TW091134770A patent/TW569438B/zh not_active IP Right Cessation
- 2002-12-18 KR KR10-2002-0081190A patent/KR100526724B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
KR20030065297A (ko)	2003-08-06
DE60217463T2 (de)	2007-10-11
TW569438B (en)	2004-01-01
US6510073B1 (en)	2003-01-21
EP1333444B1 (de)	2007-01-10
EP1333444A1 (de)	2003-08-06
TW200302570A (en)	2003-08-01
JP2003228976A (ja)	2003-08-15
KR100526724B1 (ko)	2005-11-08

Publication	Publication Date	Title
DE60217463D1 (de)	2007-02-22	Nichtflüchtige ferroelektrische Zweitransistor-Speicherzelle
DE60314068D1 (de)	2007-07-12	Nichtflüchtiger Halbleiterspeicher
DE602004007173D1 (de)	2007-08-09	Nichtflüchtiger Halbleiterspeicher
DE60301119D1 (de)	2005-09-01	Nichtflüchtige SRAM Speicherzelle
DE602004028190D1 (de)	2010-09-02	Speicheranordnung
DE60300777D1 (de)	2005-07-07	Nichtflüchtiger redundanzadressen-speicher
DE60332081D1 (de)	2010-05-27	Nichtflüchtige Halbleiterspeicheranordnung
DE60326116D1 (de)	2009-03-26	Nichtflüchtige Speicherzelle und nichtflüchtige Halbleiterspeicheranordnung
NL1023939A1 (nl)	2004-01-20	Draagbare dataopslaginrichting met gelaagde geheugenarchitectuur.
DE602004020504D1 (de)	2009-05-20	Speichersteuerung
DE60213560D1 (de)	2006-09-14	Halbleiterspeicher
DE60210416D1 (de)	2006-05-18	Speicherkarte
SG108925A1 (en)	2005-02-28	Non-volatile memory cells
DE60325343D1 (de)	2009-01-29	Verbessertes löschverfahren für eine doppelbit-speicherzelle
DE60037786D1 (de)	2008-03-06	Nichtflüchtiger Halbleiterspeicher mit Zwei-Bitzellen
DE602006006694D1 (de)	2009-06-18	Remanente flüchtige speicherzelle
DE60317930D1 (de)	2008-01-17	Verbessertes system zum programmieren einer nichtflüchtigen speicherzelle
DE60317381D1 (de)	2007-12-20	Halbleiterspeicher
ITMI20020793A1 (it)	2003-10-15	Memoria a semiconduttore feram
DE60334276D1 (de)	2010-11-04	Programmierbarer Speichertransistor
DE60222891D1 (de)	2007-11-22	Nichtflüchtige Speicheranordnung und Selbstreparatur-Verfahren
DE60336787D1 (de)	2011-06-01	Halbleiterspeicher
DE60305752D1 (de)	2006-07-20	SpeicherKarte
DE60227782D1 (de)	2008-09-04	Thermisch stabiler ferroelektrischer Speicher
DE602004004017D1 (de)	2007-02-15	Nichtflüchtiger Flash-Speicher

Legal Events

Date	Code	Title	Description
2008-01-31	8364	No opposition during term of opposition