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DE60210546D1 - Optische Halbleitervorrichtung und Herstellungsverfahren - Google Patents

Optische Halbleitervorrichtung und Herstellungsverfahren

Info

Publication number
DE60210546D1
DE60210546D1 DE60210546T DE60210546T DE60210546D1 DE 60210546 D1 DE60210546 D1 DE 60210546D1 DE 60210546 T DE60210546 T DE 60210546T DE 60210546 T DE60210546 T DE 60210546T DE 60210546 D1 DE60210546 D1 DE 60210546D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60210546T
Other languages
English (en)
Other versions
DE60210546T2 (de
Inventor
Matsuyuki Ogasawara
Susumu Kondo
Ryuzo Iga
Yasuhiro Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE60210546D1 publication Critical patent/DE60210546D1/de
Application granted granted Critical
Publication of DE60210546T2 publication Critical patent/DE60210546T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
DE60210546T 2001-08-21 2002-08-16 Optische Halbleitervorrichtung und Herstellungsverfahren Expired - Lifetime DE60210546T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001249831 2001-08-21
JP2001249831A JP3654435B2 (ja) 2001-08-21 2001-08-21 半導体光素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE60210546D1 true DE60210546D1 (de) 2006-05-24
DE60210546T2 DE60210546T2 (de) 2007-04-05

Family

ID=19078770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60210546T Expired - Lifetime DE60210546T2 (de) 2001-08-21 2002-08-16 Optische Halbleitervorrichtung und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US6815786B2 (de)
EP (1) EP1286439B1 (de)
JP (1) JP3654435B2 (de)
DE (1) DE60210546T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60212755T2 (de) * 2001-04-18 2006-11-16 Nippon Telegraph And Telephone Corp. Optische Halbleitervorrichtung und Herstellungsverfahren
US8792531B2 (en) 2003-02-25 2014-07-29 Finisar Corporation Optical beam steering for tunable laser applications
KR100547830B1 (ko) * 2003-08-13 2006-01-31 삼성전자주식회사 집적광학장치 및 그 제조방법
GB2406213B (en) * 2003-09-20 2006-07-26 Agilent Technologies Inc Semiconductor device
KR100575964B1 (ko) * 2003-12-16 2006-05-02 삼성전자주식회사 광검출기가 모놀리식 집적된 전계 흡수형 광변조 모듈
US20060120428A1 (en) * 2004-12-08 2006-06-08 Dae Kon Oh Distributed feedback (DFB) semiconductor laser and fabrication method thereof
JP4797782B2 (ja) 2006-04-28 2011-10-19 住友電気工業株式会社 半導体光素子
WO2008080171A1 (en) 2006-12-22 2008-07-03 Finisar Corporation Optical transmitter having a widely tunable directly modulated laser and periodic optical spectrum reshaping element
US8131157B2 (en) 2007-01-22 2012-03-06 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
WO2008097928A1 (en) 2007-02-02 2008-08-14 Finisar Corporation Temperature stabilizing packaging for optoelectronic components in a transmitter module
US7991291B2 (en) 2007-02-08 2011-08-02 Finisar Corporation WDM PON based on DML
US8027593B2 (en) * 2007-02-08 2011-09-27 Finisar Corporation Slow chirp compensation for enhanced signal bandwidth and transmission performances in directly modulated lasers
JP5062732B2 (ja) * 2007-02-28 2012-10-31 日本電信電話株式会社 半導体変調器
US8204386B2 (en) 2007-04-06 2012-06-19 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
US7991297B2 (en) * 2007-04-06 2011-08-02 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
JP5372349B2 (ja) * 2007-08-23 2013-12-18 浜松ホトニクス株式会社 量子カスケードレーザ素子
JP2009135333A (ja) 2007-11-30 2009-06-18 Sumitomo Electric Ind Ltd 半導体発光素子の製造方法
JP4998238B2 (ja) * 2007-12-07 2012-08-15 三菱電機株式会社 集積型半導体光素子
US8160455B2 (en) 2008-01-22 2012-04-17 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
US7869473B2 (en) * 2008-03-21 2011-01-11 Finisar Corporation Directly modulated laser with isolated modulated gain electrode for improved frequency modulation
US8260150B2 (en) 2008-04-25 2012-09-04 Finisar Corporation Passive wave division multiplexed transmitter having a directly modulated laser array
JP2011029595A (ja) * 2009-06-26 2011-02-10 Opnext Japan Inc 光モジュール及び集積型半導体光素子及びその製造方法
US8199785B2 (en) 2009-06-30 2012-06-12 Finisar Corporation Thermal chirp compensation in a chirp managed laser
GB201002088D0 (en) 2010-02-09 2010-03-24 Ct For Integrated Photonics Th Opto-electronic device
JP2011181789A (ja) * 2010-03-03 2011-09-15 Nippon Telegr & Teleph Corp <Ntt> 半導体光源
JP5660940B2 (ja) * 2010-04-27 2015-01-28 住友電工デバイス・イノベーション株式会社 光半導体装置の製造方法
JP2012248812A (ja) * 2011-05-31 2012-12-13 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法
JP2013077797A (ja) * 2011-09-16 2013-04-25 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
WO2019186638A1 (ja) * 2018-03-26 2019-10-03 三菱電機株式会社 半導体装置の製造方法
US11552451B2 (en) * 2018-05-28 2023-01-10 Mitsubishi Electric Corporation Semiconductor laser device

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Publication number Priority date Publication date Assignee Title
JPS6218078A (ja) * 1985-07-17 1987-01-27 Nec Corp 埋込み構造半導体レ−ザ−及びその製造方法
JPH0746744B2 (ja) * 1986-05-19 1995-05-17 富士通株式会社 半導体発光装置の製造方法
JPH01192184A (ja) * 1988-01-28 1989-08-02 Nippon Telegr & Teleph Corp <Ntt> 埋込み型半導体レーザの製造方法
JP2836822B2 (ja) 1988-06-23 1998-12-14 日本電信電話株式会社 導波路型半導体光素子の製造方法
JPH03133189A (ja) * 1989-10-18 1991-06-06 Nec Corp 高抵抗半導体層埋め込み型半導体レーザ
JP2804946B2 (ja) * 1991-01-07 1998-09-30 日本電信電話株式会社 埋込型化合物半導体発光装置及びその製法
JPH05129714A (ja) * 1991-11-01 1993-05-25 Hitachi Ltd 半導体装置
JPH06275911A (ja) 1993-03-19 1994-09-30 Fujitsu Ltd 半導体レーザ装置とその製造方法
JPH0851250A (ja) * 1994-08-09 1996-02-20 Mitsubishi Electric Corp 半導体レーザ
JP3386261B2 (ja) * 1994-12-05 2003-03-17 三菱電機株式会社 光半導体装置、及びその製造方法
JP3360962B2 (ja) * 1995-03-15 2003-01-07 株式会社東芝 半導体レーザ
JPH092145A (ja) 1995-06-23 1997-01-07 Honda Motor Co Ltd 車両用照明装置
JPH09214045A (ja) 1996-01-30 1997-08-15 Fujitsu Ltd 半導体レーザ及びその製造方法
JPH1022579A (ja) * 1996-07-03 1998-01-23 Mitsubishi Electric Corp 光導波路構造とこの光導波路構造を用いた半導体レーザ、変調器及び集積型半導体レーザ装置
JP3317271B2 (ja) * 1999-03-19 2002-08-26 日本電気株式会社 半導体光素子およびその製造方法
JP3705013B2 (ja) * 1999-05-24 2005-10-12 日本電気株式会社 半導体素子
US6664605B1 (en) * 2000-03-31 2003-12-16 Triquint Technology Holding Co. Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs

Also Published As

Publication number Publication date
EP1286439A2 (de) 2003-02-26
US20030042495A1 (en) 2003-03-06
JP3654435B2 (ja) 2005-06-02
US6815786B2 (en) 2004-11-09
EP1286439A3 (de) 2005-02-02
EP1286439B1 (de) 2006-04-12
JP2003060310A (ja) 2003-02-28
DE60210546T2 (de) 2007-04-05

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Legal Events

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