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DE3884366D1 - Vorrichtung zur Erzeugung der zweiten Harmonischen, wobei sich die aktive Schicht und die Schicht zur Erzeugung der zweiten Harmonischen auf demselben Substrat befinden. - Google Patents

Vorrichtung zur Erzeugung der zweiten Harmonischen, wobei sich die aktive Schicht und die Schicht zur Erzeugung der zweiten Harmonischen auf demselben Substrat befinden.

Info

Publication number
DE3884366D1
DE3884366D1 DE88121690T DE3884366T DE3884366D1 DE 3884366 D1 DE3884366 D1 DE 3884366D1 DE 88121690 T DE88121690 T DE 88121690T DE 3884366 T DE3884366 T DE 3884366T DE 3884366 D1 DE3884366 D1 DE 3884366D1
Authority
DE
Germany
Prior art keywords
harmonic generation
layer
same substrate
active layer
generation device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88121690T
Other languages
English (en)
Other versions
DE3884366T2 (de
Inventor
Akira Shimizu
Sotomitsu Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33497287A external-priority patent/JPH01175286A/ja
Priority claimed from JP14486788A external-priority patent/JPH01313980A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3884366D1 publication Critical patent/DE3884366D1/de
Publication of DE3884366T2 publication Critical patent/DE3884366T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0092—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H01S5/1035—Forward coupled structures [DFC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE88121690T 1987-12-28 1988-12-27 Vorrichtung zur Erzeugung der zweiten Harmonischen, wobei sich die aktive Schicht und die Schicht zur Erzeugung der zweiten Harmonischen auf demselben Substrat befinden. Expired - Fee Related DE3884366T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33497287A JPH01175286A (ja) 1987-12-28 1987-12-28 半導体レーザ素子
JP14486788A JPH01313980A (ja) 1988-06-14 1988-06-14 第２高調波発生装置

Publications (2)

Publication Number Publication Date
DE3884366D1 true DE3884366D1 (de) 1993-10-28
DE3884366T2 DE3884366T2 (de) 1994-01-27

Family

ID=26476150

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88121690T Expired - Fee Related DE3884366T2 (de) 1987-12-28 1988-12-27 Vorrichtung zur Erzeugung der zweiten Harmonischen, wobei sich die aktive Schicht und die Schicht zur Erzeugung der zweiten Harmonischen auf demselben Substrat befinden.

Country Status (3)

Country Link
US (1) US4930132A (de)
EP (1) EP0322847B1 (de)
DE (1) DE3884366T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2223352A (en) * 1988-09-28 1990-04-04 Philips Electronic Associated Frequency-doubled light emitting device
JP2647190B2 (ja) * 1989-03-28 1997-08-27 シャープ株式会社 光波長変換装置
US5033053A (en) * 1989-03-30 1991-07-16 Canon Kabushiki Kaisha Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same
EP0390200B1 (de) * 1989-03-31 1994-06-08 Canon Kabushiki Kaisha Halbleiterlaser zur selektiven Ausstrahlung von Licht mit verschiedenen Wellenlängen
US5038185A (en) * 1989-11-30 1991-08-06 Xerox Corporation Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors
US5051617A (en) * 1990-06-29 1991-09-24 National Research Council Canada Multilayer semiconductor waveguide device for sum frequency generation from contra-propagating beams
US5289018A (en) * 1990-08-14 1994-02-22 Canon Kabushiki Kaisha Light emitting device utilizing cavity quantum electrodynamics
JP2721436B2 (ja) * 1990-11-07 1998-03-04 沖電気工業株式会社 第２高調波発生装置
JP2805400B2 (ja) * 1991-06-14 1998-09-30 富士写真フイルム株式会社 光波長変換装置
US5408110A (en) * 1993-06-28 1995-04-18 National Research Council Of Canada Second-harmonic generation in semiconductor heterostructures
DE4416607C2 (de) * 1994-05-11 1997-09-04 Klaus Reimann Vorrichtung zur Verdopplung der Laserfrequenz einer Halbleiterlaserdiode
GB2296813B (en) * 1994-12-29 1998-09-09 Sharp Kk An apparatus for producing light
JP2002198612A (ja) * 2000-12-25 2002-07-12 Nippon Sheet Glass Co Ltd 波長監視装置
US7433374B2 (en) * 2006-12-21 2008-10-07 Coherent, Inc. Frequency-doubled edge-emitting semiconductor lasers
WO2009078482A1 (ja) * 2007-12-19 2009-06-25 Rohm Co., Ltd. 半導体発光素子
US8378551B2 (en) * 2009-09-25 2013-02-19 Canon Kabushiki Kaisha Actuator and method of manufacturing the same
US8320722B1 (en) 2010-04-13 2012-11-27 Western Digital (Fremont), Llc Non-linear optical grating
US8422841B1 (en) 2010-05-13 2013-04-16 Western Digital (Fremont), Llc Double optical grating

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794608A (en) * 1984-03-06 1988-12-27 Matsushita Electric Inductrial Co., Ltd. Semiconductor laser device
JPS61140189A (ja) * 1984-12-12 1986-06-27 Canon Inc 半導体レ−ザ
JPH0632339B2 (ja) * 1984-12-18 1994-04-27 キヤノン株式会社 半導体レ−ザ
JPH0646666B2 (ja) * 1985-01-08 1994-06-15 キヤノン株式会社 半導体レ−ザ装置
JPS61190980A (ja) * 1985-02-19 1986-08-25 Canon Inc 半導体装置
JPS61290426A (ja) * 1985-06-18 1986-12-20 Sharp Corp 高調波発生器
US4743083A (en) * 1985-12-30 1988-05-10 Schimpe Robert M Cylindrical diffraction grating couplers and distributed feedback resonators for guided wave devices
US4799299A (en) * 1987-12-28 1989-01-24 Campbell Ken L Clip track device for securing flexible sheets

Also Published As

Publication number Publication date
EP0322847A2 (de) 1989-07-05
DE3884366T2 (de) 1994-01-27
EP0322847B1 (de) 1993-09-22
US4930132A (en) 1990-05-29
EP0322847A3 (en) 1989-10-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee