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DE3575811D1 - Zerstaeubungsgeraet zum substrataufbau in vorgegebenen richtungen. - Google Patents

Zerstaeubungsgeraet zum substrataufbau in vorgegebenen richtungen.

Info

Publication number
DE3575811D1
DE3575811D1 DE8585114424T DE3575811T DE3575811D1 DE 3575811 D1 DE3575811 D1 DE 3575811D1 DE 8585114424 T DE8585114424 T DE 8585114424T DE 3575811 T DE3575811 T DE 3575811T DE 3575811 D1 DE3575811 D1 DE 3575811D1
Authority
DE
Germany
Prior art keywords
structuring
substrate
spraying device
specified directions
directions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585114424T
Other languages
English (en)
Inventor
Masao Sakata
Hideaki Shimamura
Shigeru Kobayashi
Michiyoshi Kawahito
Tsuneaki Kamei
Katsuo Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59238358A external-priority patent/JPS61117276A/ja
Priority claimed from JP23835484A external-priority patent/JPH0660390B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3575811D1 publication Critical patent/DE3575811D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3327—Coating high aspect ratio workpieces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE8585114424T 1984-11-14 1985-11-13 Zerstaeubungsgeraet zum substrataufbau in vorgegebenen richtungen. Expired - Lifetime DE3575811D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59238358A JPS61117276A (ja) 1984-11-14 1984-11-14 スパツタリング用タ−ゲツト
JP23835484A JPH0660390B2 (ja) 1984-11-14 1984-11-14 プレーナマグネトロン方式の微小孔を有する成膜対象基板への成膜方法およびその装置

Publications (1)

Publication Number Publication Date
DE3575811D1 true DE3575811D1 (de) 1990-03-08

Family

ID=26533654

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585114424T Expired - Lifetime DE3575811D1 (de) 1984-11-14 1985-11-13 Zerstaeubungsgeraet zum substrataufbau in vorgegebenen richtungen.

Country Status (4)

Country Link
US (1) US4724060A (de)
EP (1) EP0187226B1 (de)
KR (1) KR900001825B1 (de)
DE (1) DE3575811D1 (de)

Families Citing this family (60)

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US6521106B1 (en) * 1990-01-29 2003-02-18 Novellus Systems, Inc. Collimated deposition apparatus
EP0440377B1 (de) * 1990-01-29 1998-03-18 Varian Associates, Inc. Gerät und Verfahren zur Niederschlagung durch einen Kollimator
US5437778A (en) * 1990-07-10 1995-08-01 Telic Technologies Corporation Slotted cylindrical hollow cathode/magnetron sputtering device
WO1992004482A1 (en) * 1990-08-30 1992-03-19 Materials Research Corporation Pretextured cathode sputtering target and method of preparation thereof and sputtering therewith
CA2061119C (en) * 1991-04-19 1998-02-03 Pei-Ing P. Lee Method of depositing conductors in high aspect ratio apertures
JP2725944B2 (ja) * 1991-04-19 1998-03-11 インターナショナル・ビジネス・マシーンズ・コーポレイション 金属層堆積方法
JPH05160070A (ja) * 1991-05-31 1993-06-25 Texas Instr Inc <Ti> 半導体装置の接点とその製法
US5171412A (en) * 1991-08-23 1992-12-15 Applied Materials, Inc. Material deposition method for integrated circuit manufacturing
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
US5223108A (en) * 1991-12-30 1993-06-29 Materials Research Corporation Extended lifetime collimator
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5371042A (en) * 1992-06-16 1994-12-06 Applied Materials, Inc. Method of filling contacts in semiconductor devices
US5367412A (en) * 1992-09-10 1994-11-22 Rohm Co., Ltd. Recording/reproducing circuit and recording/reproducing apparatus having the same circuit
JP3169151B2 (ja) * 1992-10-26 2001-05-21 三菱電機株式会社 薄膜形成装置
US5384281A (en) * 1992-12-29 1995-01-24 International Business Machines Corporation Non-conformal and oxidizable etch stops for submicron features
US5378660A (en) * 1993-02-12 1995-01-03 Applied Materials, Inc. Barrier layers and aluminum contacts
US5358616A (en) * 1993-02-17 1994-10-25 Ward Michael G Filling of vias and contacts employing an aluminum-germanium alloy
US5362372A (en) * 1993-06-11 1994-11-08 Applied Materials, Inc. Self cleaning collimator
EP0634779A1 (de) * 1993-06-11 1995-01-18 Applied Materials, Inc. Kollimationskammer mit drehbarem Sockel
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5409587A (en) * 1993-09-16 1995-04-25 Micron Technology, Inc. Sputtering with collinator cleaning within the sputtering chamber
US5472565A (en) * 1993-11-17 1995-12-05 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
US5958193A (en) * 1994-02-01 1999-09-28 Vlsi Technology, Inc. Sputter deposition with mobile collimator
TW278206B (de) * 1994-03-28 1996-06-11 Materials Research Corp
US5711858A (en) * 1994-04-12 1998-01-27 International Business Machines Corporation Process for depositing a conductive thin film upon an integrated circuit substrate
US5527438A (en) * 1994-12-16 1996-06-18 Applied Materials, Inc. Cylindrical sputtering shield
US5982986A (en) * 1995-02-03 1999-11-09 Applied Materials, Inc. Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
US5757879A (en) * 1995-06-07 1998-05-26 International Business Machines Corporation Tungsten absorber for x-ray mask
US5725739A (en) 1996-07-08 1998-03-10 Micron Technology, Inc. Low angle, low energy physical vapor deposition of alloys
JPH1046332A (ja) * 1996-07-30 1998-02-17 Nec Corp 金属薄膜形成装置
US5783282A (en) * 1996-10-07 1998-07-21 Micron Technology, Inc. Resputtering to achieve better step coverage of contact holes
US6162297A (en) * 1997-09-05 2000-12-19 Applied Materials, Inc. Embossed semiconductor fabrication parts
US6140236A (en) * 1998-04-21 2000-10-31 Kabushiki Kaisha Toshiba High throughput A1-Cu thin film sputtering process on small contact via for manufacturable beol wiring
DE19819933A1 (de) * 1998-05-05 1999-11-11 Leybold Systems Gmbh Target für eine Kathodenzerstäubungsvorrichtung zur Herstellung dünner Schichten
US6592728B1 (en) * 1998-08-04 2003-07-15 Veeco-Cvc, Inc. Dual collimated deposition apparatus and method of use
US6933508B2 (en) 2002-03-13 2005-08-23 Applied Materials, Inc. Method of surface texturizing
US6812471B2 (en) * 2002-03-13 2004-11-02 Applied Materials, Inc. Method of surface texturizing
US20060032740A1 (en) * 2004-08-16 2006-02-16 Williams Advanced Materials, Inc. Slotted thin-film sputter deposition targets for ferromagnetic materials
TWI265202B (en) * 2005-03-02 2006-11-01 Asia Optical Co Inc Tool and device for dedicate coating a photochemical film on a substrate
US20060292310A1 (en) * 2005-06-27 2006-12-28 Applied Materials, Inc. Process kit design to reduce particle generation
JP4923450B2 (ja) * 2005-07-01 2012-04-25 富士ゼロックス株式会社 バッチ処理支援装置および方法、プログラム
US20070084720A1 (en) * 2005-07-13 2007-04-19 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012559A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Method of improving magnetron sputtering of large-area substrates using a removable anode
US20070012558A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Magnetron sputtering system for large-area substrates
US20070012663A1 (en) * 2005-07-13 2007-01-18 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056850A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US7588668B2 (en) 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US20090166183A1 (en) * 2007-12-28 2009-07-02 Yinshi Liu Method of manufacturing a perpendicular magnetic write head with stepped trailing magnetic shield using collimated sputter deposition
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
KR101611410B1 (ko) * 2009-04-07 2016-04-11 삼성전자주식회사 그래핀의 제조 방법
US20200135464A1 (en) * 2018-10-30 2020-04-30 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
DE102021104255A1 (de) * 2021-02-23 2022-08-25 Cemecon Ag. Zerstäubungstarget

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US4170541A (en) * 1978-08-14 1979-10-09 Varian Associates, Inc. Rotating resonator for large substrate tables in sputtering systems
US4322277A (en) * 1980-11-17 1982-03-30 Rca Corporation Step mask for substrate sputtering
US4391034A (en) * 1980-12-22 1983-07-05 Ibm Corporation Thermally compensated shadow mask
DE3112104A1 (de) * 1981-03-27 1982-10-07 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum herstellen von elektrisch leitfaehigen transparenten oxidschichten
CH649578A5 (de) * 1981-03-27 1985-05-31 Ulvac Corp Hochgeschwindigkeits-kathoden-zerstaeubungsvorrichtung.
US4410407A (en) * 1981-12-22 1983-10-18 Raytheon Company Sputtering apparatus and methods
US4474659A (en) * 1982-05-28 1984-10-02 Fazal Fazlin Plated-through-hole method
DE3223245C2 (de) * 1982-07-23 1986-05-22 Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa Ferromagnetische Hochgeschwindigkeits-Kathodenzerstäubungs-Vorrichtung
US4414086A (en) * 1982-11-05 1983-11-08 Varian Associates, Inc. Magnetic targets for use in sputter coating apparatus
US4414087A (en) * 1983-01-31 1983-11-08 Meckel Benjamin B Magnetically-assisted sputtering method for producing vertical recording media
JPS59207631A (ja) * 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
ATE47504T1 (de) * 1983-12-05 1989-11-15 Leybold Ag Magnetronkatode zum zerstaeuben ferromagnetischer targets.
US4508612A (en) * 1984-03-07 1985-04-02 International Business Machines Corporation Shield for improved magnetron sputter deposition into surface recesses

Also Published As

Publication number Publication date
US4724060A (en) 1988-02-09
KR900001825B1 (ko) 1990-03-24
EP0187226A3 (en) 1987-04-08
EP0187226B1 (de) 1990-01-31
KR860004163A (ko) 1986-06-18
EP0187226A2 (de) 1986-07-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee