DE3881978D1 - Duennschichttransistoren-matrix. - Google Patents

Duennschichttransistoren-matrix.

Info

Publication number: DE3881978D1
Authority: DE; Germany
Prior art keywords: thick layer; transistor matrix; layer transistor; matrix; thick
Prior art date: 1987-07-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8888112325T

Other languages

English (en)

Other versions

DE3881978T2 (de

Inventor

Hirohisa Tanaka

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-07-30

Filing date

1988-07-29

Publication date

1993-07-29

1988-07-29 Application filed by Sharp Corp filed Critical Sharp Corp

1993-07-29 Publication of DE3881978D1 publication Critical patent/DE3881978D1/de

1993-11-04 Application granted granted Critical

1993-11-04 Publication of DE3881978T2 publication Critical patent/DE3881978T2/de

2008-07-30 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes

DE88112325T 1987-07-30 1988-07-29 Duennschichttransistoren-matrix. Expired - Fee Related DE3881978T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62193351A JPH061314B2 (ja)	1987-07-30	1987-07-30	薄膜トランジスタアレイ

Publications (2)

Publication Number	Publication Date
DE3881978D1 true DE3881978D1 (de)	1993-07-29
DE3881978T2 DE3881978T2 (de)	1993-11-04

Family

ID=16306457

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE88112325T Expired - Fee Related DE3881978T2 (de)	1987-07-30	1988-07-29	Duennschichttransistoren-matrix.

Country Status (3)

Country	Link
EP (1)	EP0301571B1 (de)
JP (1)	JPH061314B2 (de)
DE (1)	DE3881978T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6484668A (en) *	1987-09-26	1989-03-29	Casio Computer Co Ltd	Thin film transistor
JPH0640585B2 (ja) *	1987-11-02	1994-05-25	沖電気工業株式会社	薄膜トランジスタ
JPH0810299B2 (ja) *	1988-03-11	1996-01-31	株式会社精工舎	薄膜トランジスタアレイ
JPH0210330A (ja) *	1988-06-29	1990-01-16	Hitachi Ltd	アクティブマトリクス基板とその製造方法及びこれを用いた液晶表示素子
JP2778712B2 (ja) *	1988-12-05	1998-07-23	株式会社東芝	薄膜トランジスタアレイ
JPH02240636A (ja) *	1989-03-15	1990-09-25	Hitachi Ltd	アクティブマトリクス基板とこれを用いた液晶表示素子
JPH0828517B2 (ja) *	1989-07-04	1996-03-21	シャープ株式会社	薄膜トランジスタアレイ
JP2807496B2 (ja) *	1989-08-11	1998-10-08	シャープ株式会社	アクティブマトリクス基板
JPH03118520A (ja) *	1989-09-29	1991-05-21	Sharp Corp	薄膜トランジスタアレイ
US5367179A (en) *	1990-04-25	1994-11-22	Casio Computer Co., Ltd.	Thin-film transistor having electrodes made of aluminum, and an active matrix panel using same
US5243202A (en) *	1990-04-25	1993-09-07	Casio Computer Co., Ltd.	Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type
EP0476701B1 (de) *	1990-09-21	1995-12-13	Casio Computer Company Limited	Dünnfilmtransistor und eine Dünnfilmtransistorpanele, die solche Transistoren verwendet
JPH04280637A (ja) *	1991-03-08	1992-10-06	Nippondenso Co Ltd	薄膜トランジスタの製造方法
GB2255443B (en) *	1991-04-30	1995-09-13	Samsung Electronics Co Ltd	Fabricating a metal electrode of a semiconductor device
JPH0793363B2 (ja) *	1991-09-25	1995-10-09	株式会社半導体エネルギー研究所	半導体集積回路およびその作製方法
JPH05152573A (ja) *	1991-11-29	1993-06-18	Nec Corp	薄膜トランジスタ及びその製造方法
EP0545327A1 (de) *	1991-12-02	1993-06-09	Matsushita Electric Industrial Co., Ltd.	Dünnschichttransistoranordnung für den Gebrauch in einer Flüssigkristallanzeige
JPH06188419A (ja) *	1992-12-16	1994-07-08	Matsushita Electric Ind Co Ltd	薄膜トランジスタの製造方法
DE69635239T2 (de) *	1995-11-21	2006-07-06	Samsung Electronics Co., Ltd., Suwon	Verfahren zur Herstellung einer Flüssigkristall-Anzeige
US5731232A (en) *	1996-11-08	1998-03-24	Taiwan Semiconductor Manufacturing Company, Ltd.	Method for concurrently making thin-film-transistor (TFT) gate electrodes and ohmic contacts at P/N junctions for TFT-static random
GB2338105B (en) *	1997-03-04	2000-04-12	Lg Electronics Inc	Method of making a thin film transistor
KR100248123B1 (ko) *	1997-03-04	2000-03-15	구본준	박막트랜지스터및그의제조방법
US6333518B1 (en)	1997-08-26	2001-12-25	Lg Electronics Inc.	Thin-film transistor and method of making same
CN104701326A (zh) *	2015-03-19	2015-06-10	京东方科技集团股份有限公司	阵列基板及其制造方法和显示装置
CN108819909A (zh) *	2018-08-01	2018-11-16	苏州培星智能装备科技有限公司	汽车后挡风玻璃防尘装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59141271A (ja) *	1983-01-31	1984-08-13	Sharp Corp	薄膜トランジスタ
JPS5932069A (ja) *	1982-08-17	1984-02-21	Mitsubishi Electric Corp	光学文字読取装置
JPS609167A (ja) *	1983-06-28	1985-01-18	Matsushita Electric Ind Co Ltd	半導体装置およびその製造方法
JPS6054478A (ja) *	1983-09-06	1985-03-28	Toshiba Corp	表示装置用駆動回路基板の製造方法
JPS61166173A (ja) *	1985-01-18	1986-07-26	Matsushita Electric Ind Co Ltd	薄膜トランジスタ装置

1987
- 1987-07-30 JP JP62193351A patent/JPH061314B2/ja not_active Expired - Fee Related
1988
- 1988-07-29 EP EP88112325A patent/EP0301571B1/de not_active Expired - Lifetime
- 1988-07-29 DE DE88112325T patent/DE3881978T2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH061314B2 (ja)	1994-01-05
EP0301571A3 (en)	1990-01-03
DE3881978T2 (de)	1993-11-04
JPS6435421A (en)	1989-02-06
EP0301571A2 (de)	1989-02-01
EP0301571B1 (de)	1993-06-23

Publication	Publication Date	Title
DE3881978D1 (de)	1993-07-29	Duennschichttransistoren-matrix.
DE3865715D1 (de)	1991-11-28	Grenzschichteinrichtungen.
DK107489A (da)	1989-03-06	Oprivningslaag
DE3881843D1 (de)	1993-07-22	Orientierte polyaethylenfolie.
DE3851276D1 (de)	1994-10-06	Matrix-Anzeigevorrichtungen.
FI880863L (fi)	1988-08-26	Tjockfilmresistansbana.
DE3880213D1 (de)	1993-05-19	Voruebertragungsplatte mit vorspannung.
FI851514L (fi)	1985-10-18	Organiska foereningar.
DE3586385D1 (de)	1992-08-27	Integrierte gate-matrixstruktur.
DE3882851D1 (de)	1993-09-09	Elektrolumineszente duennschicht-anzeigevorrichtung.
DE3887716D1 (de)	1994-03-24	Transistor.
DE3852809D1 (de)	1995-03-02	Gegenstand mit Farbstoffempfangsschicht.
DE3860349D1 (de)	1990-08-30	Aufgestaeubte titanoxynitrid-filme.
DE3853026D1 (de)	1995-03-23	Transistor mit heissen Elektronen.
DE3871871D1 (de)	1992-07-16	Superleitende duennschicht.
FI870147A0 (fi)	1987-01-15	Mikrobiologisk framstaellningsmetod.
ATE117874T1 (de)	1995-02-15	Molluskizide.
DE3871670D1 (de)	1992-07-09	Schichtverpackung.
DE3583064D1 (de)	1991-07-11	Supraleitender transistor.
DE3581910D1 (de)	1991-04-04	Speichermatrix.
DE3686709D1 (de)	1992-10-15	Gattermatrix.
FI893390L (fi)	1990-01-14	Maongskiktsstrukturer.
DE3779202D1 (de)	1992-06-25	Amorphe duennfilmtransistoranordnung.
DE3876158D1 (de)	1993-01-07	Duennfilm-elektrolumineszenzgeraet.
DE3883747D1 (de)	1993-10-07	Gelatinzusammensetzung.

Legal Events

Date	Code	Title	Description
1994-07-21	8364	No opposition during term of opposition
2003-05-15	8339	Ceased/non-payment of the annual fee