DE3853026D1 - Transistor mit heissen Elektronen. - Google Patents

Transistor mit heissen Elektronen.

Info

Publication number: DE3853026D1
Authority: DE; Germany
Prior art keywords: transistor; hot electrons; electrons; hot
Prior art date: 1987-07-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE3853026T

Other languages

English (en)

Other versions

DE3853026T2 (de

Inventor

Anthony Frederic John Levi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

AT&T Corp

Original Assignee

AT&T Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-07-17

Filing date

1988-07-07

Publication date

1995-03-23

1988-07-07 Application filed by AT&T Corp filed Critical AT&T Corp

1995-03-23 Application granted granted Critical

1995-03-23 Publication of DE3853026D1 publication Critical patent/DE3853026D1/de

1995-06-08 Publication of DE3853026T2 publication Critical patent/DE3853026T2/de

2008-07-08 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
- H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
- H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
- H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
- H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP

DE3853026T 1987-07-17 1988-07-07 Transistor mit heissen Elektronen. Expired - Fee Related DE3853026T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US07/074,127 US4829343A (en)	1987-07-17	1987-07-17	Hot electron transistor

Publications (2)

Publication Number	Publication Date
DE3853026D1 true DE3853026D1 (de)	1995-03-23
DE3853026T2 DE3853026T2 (de)	1995-06-08

Family

ID=22117883

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE3853026T Expired - Fee Related DE3853026T2 (de)	1987-07-17	1988-07-07	Transistor mit heissen Elektronen.

Country Status (7)

Country	Link
US (1)	US4829343A (de)
EP (1)	EP0299686B1 (de)
JP (1)	JPH077835B2 (de)
KR (1)	KR0134095B1 (de)
CA (1)	CA1290865C (de)
DE (1)	DE3853026T2 (de)
HK (1)	HK82096A (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0276262A (ja) *	1988-09-12	1990-03-15	Fujitsu Ltd	半導体装置
US5206524A (en) *	1988-09-28	1993-04-27	At&T Bell Laboratories	Heterostructure bipolar transistor
US5245204A (en) *	1989-03-29	1993-09-14	Canon Kabushiki Kaisha	Semiconductor device for use in an improved image pickup apparatus
US5140400A (en) *	1989-03-29	1992-08-18	Canon Kabushiki Kaisha	Semiconductor device and photoelectric converting apparatus using the same
US5106766A (en) *	1989-07-11	1992-04-21	At&T Bell Laboratories	Method of making a semiconductor device that comprises p-type III-V semiconductor material
US5001534A (en) *	1989-07-11	1991-03-19	At&T Bell Laboratories	Heterojunction bipolar transistor
JP2527060B2 (ja) *	1990-01-29	1996-08-21	ソニー株式会社	半導体装置
US5742071A (en) *	1991-10-15	1998-04-21	Hitachi, Ltd.	Wiringless logical operation circuits
JP3156307B2 (ja) *	1991-10-15	2001-04-16	株式会社日立製作所	一電子トンネルトランジスタ及びその集積回路
US5304816A (en) *	1992-11-25	1994-04-19	At&T Bell Laboratories	Article comprising a "ballistic" heterojunction bipolar transistor
US5442194A (en) *	1994-01-07	1995-08-15	Texas Instruments Incorporated	Room-temperature tunneling hot-electron transistor
US5497012A (en) *	1994-06-15	1996-03-05	Hewlett-Packard Company	Unipolar band minima devices
US5436469A (en) *	1994-06-15	1995-07-25	Moll; Nicolas J.	Band minima transistor
JP3630894B2 (ja) *	1996-12-24	2005-03-23	株式会社半導体エネルギー研究所	電荷転送半導体装置およびその作製方法並びにイメージセンサ
US20080217603A1 (en) *	2007-01-31	2008-09-11	Youichi Takeda	Hot electron transistor and semiconductor device including the same
WO2015127386A1 (en)	2014-02-21	2015-08-27	Terahertz Device Corporation	Front-side emitting mid-infrared light emitting diode
WO2015138635A1 (en) *	2014-03-11	2015-09-17	Terahertz Device Corporation	Front-side emitting mid-infrared light emitting diode fabrication

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4395722A (en) *	1980-10-21	1983-07-26	The United States Of America As Represented By The Secretary Of The Army	Heterojunction transistor
US4395772A (en) *	1981-04-30	1983-07-26	Bell Telephone Laboratories, Incorporated	Line protection switch controller
US4396931A (en) *	1981-06-12	1983-08-02	International Business Machines Corporation	Tunnel emitter upper valley transistor
US4672404A (en) *	1982-09-17	1987-06-09	Cornell Research Foundation, Inc.	Ballistic heterojunction bipolar transistor
JPH0750714B2 (ja) *	1984-01-30	1995-05-31	日本電気株式会社	バイポーラトランジスタ
JPS60206081A (ja) *	1984-03-29	1985-10-17	Sharp Corp	半導体レ−ザ装置
US4649405A (en) *	1984-04-10	1987-03-10	Cornell Research Foundation, Inc.	Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices

1987
- 1987-07-17 US US07/074,127 patent/US4829343A/en not_active Expired - Lifetime
1988
- 1988-07-07 EP EP88306236A patent/EP0299686B1/de not_active Expired - Lifetime
- 1988-07-07 DE DE3853026T patent/DE3853026T2/de not_active Expired - Fee Related
- 1988-07-11 JP JP63171080A patent/JPH077835B2/ja not_active Expired - Fee Related
- 1988-07-16 KR KR1019880008871A patent/KR0134095B1/ko not_active Expired - Fee Related
- 1988-07-18 CA CA000572285A patent/CA1290865C/en not_active Expired - Fee Related
1996
- 1996-05-09 HK HK82096A patent/HK82096A/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
DE3853026T2 (de)	1995-06-08
EP0299686B1 (de)	1995-02-15
KR0134095B1 (ko)	1998-04-20
EP0299686A2 (de)	1989-01-18
KR890003039A (ko)	1989-04-12
HK82096A (en)	1996-05-17
JPS6437053A (en)	1989-02-07
JPH077835B2 (ja)	1995-01-30
US4829343A (en)	1989-05-09
CA1290865C (en)	1991-10-15
EP0299686A3 (en)	1990-01-24

Publication	Publication Date	Title
FI891370A0 (fi)	1989-03-22	Vattenloesliga fyllmedel.
NO884557D0 (no)	1988-10-13	Borkrone med diamanter e.l.
DE3853026D1 (de)	1995-03-23	Transistor mit heissen Elektronen.
DE3887716D1 (de)	1994-03-24	Transistor.
DE3578274D1 (de)	1990-07-19	Heisselektronen-unipolartransistor.
DE3865367D1 (de)	1991-11-14	Heizapparat.
NO881411D0 (no)	1988-03-29	Substituerte pyrroler.
NO881120L (no)	1988-09-27	Sputrede titanoksynitridfilmer.
DE3882304D1 (de)	1993-08-19	Mikrowellentransistor mit doppelheterouebergang.
DE3868866D1 (de)	1992-04-09	Ergolinderivate mit antiparkinsonwirkung.
DE3860836D1 (de)	1990-11-29	Bipolarer transistor mit heterouebergang.
DE3583064D1 (de)	1991-07-11	Supraleitender transistor.
FI880853A7 (fi)	1989-01-11	Tappningsraenna foer sodasmaelta i en sodapanna.
ATE92232T1 (de)	1993-08-15	Heizvorrichtungen.
DE3886549D1 (de)	1994-02-03	Niedrigtemperaturofen.
DE3773276D1 (de)	1991-10-31	Transistoranordnung.
DE3879124D1 (de)	1993-04-15	Erhitzer.
DE69105762D1 (de)	1995-01-26	Heisse-Elektronen-Transistor.
DE3880443D1 (de)	1993-05-27	Feldeffekttransistor.
DE3781202D1 (de)	1992-09-24	Transistoren mit heissen ladungstraegern.
DE3871021D1 (de)	1992-06-17	Heizapparat.
NO872594L (no)	1987-12-28	Stereooverfing med dirigeringsenhet.
NO870622D0 (no)	1987-02-17	Varmeinnretning.
FI882999A7 (fi)	1988-12-23	Flat tillslutning foer en vaetskefoerpacknings oevre aende.
DE3854098D1 (de)	1995-08-10	Feldeffekttransistor.

Legal Events

Date	Code	Title	Description
1996-03-21	8364	No opposition during term of opposition
2002-09-26	8339	Ceased/non-payment of the annual fee