DE3686709D1 - Gattermatrix. - Google Patents

Gattermatrix.

Info

Publication number: DE3686709D1
Authority: DE; Germany
Prior art keywords: gate matrix; matrix; gate
Prior art date: 1985-11-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8686402558T

Other languages

English (en)

Other versions

DE3686709T2 (de

Inventor

Tetsu Tanizawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-11-19

Filing date

1986-11-19

Publication date

1992-10-15

1986-11-19 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1992-10-15 Application granted granted Critical

1992-10-15 Publication of DE3686709D1 publication Critical patent/DE3686709D1/de

1993-01-14 Publication of DE3686709T2 publication Critical patent/DE3686709T2/de

2006-11-20 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/903—Masterslice integrated circuits comprising field effect technology
- H10D84/907—CMOS gate arrays
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/311—Design considerations for internal polarisation in bipolar devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Design And Manufacture Of Integrated Circuits (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Semiconductor Integrated Circuits (AREA)
Element Separation (AREA)

DE8686402558T 1985-11-19 1986-11-19 Gattermatrix. Expired - Fee Related DE3686709T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60259396A JPS62119936A (ja)	1985-11-19	1985-11-19	コンプリメンタリ−ｌｓｉチツプ

Publications (2)

Publication Number	Publication Date
DE3686709D1 true DE3686709D1 (de)	1992-10-15
DE3686709T2 DE3686709T2 (de)	1993-01-14

Family

ID=17333549

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8686402558T Expired - Fee Related DE3686709T2 (de)	1985-11-19	1986-11-19	Gattermatrix.

Country Status (5)

Country	Link
US (1)	US4928164A (de)
EP (1)	EP0228320B1 (de)
JP (1)	JPS62119936A (de)
KR (1)	KR900003029B1 (de)
DE (1)	DE3686709T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5047825A (en) *	1988-06-09	1991-09-10	Hitachi, Ltd.	Semiconductor integrated circuit device having a decoder portion of complementary misfets employing multi-level conducting layer and a memory cell portion
US5247200A (en) *	1989-02-16	1993-09-21	Kabushiki Kaisha Toshiba	MOSFET input type BiMOS IC device
USRE37424E1 (en) *	1989-06-14	2001-10-30	Stmicroelectronics S.R.L.	Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage
IT1235843B (it) *	1989-06-14	1992-11-03	Sgs Thomson Microelectronics	Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione.
US5057895A (en) *	1990-08-06	1991-10-15	Harris Corporation	Trench conductor and crossunder architecture
US5196373A (en) *	1990-08-06	1993-03-23	Harris Corporation	Method of making trench conductor and crossunder architecture
US5119160A (en) *	1990-11-19	1992-06-02	Hall John H	Clocked CBICMOS integrated transistor structure
WO1995017007A1 (en) *	1993-12-14	1995-06-22	Oki America, Inc.	Efficient routing method and resulting structure for integrated circuits
CN1186683C (zh) *	1999-09-08	2005-01-26	松下电器产业株式会社	显示装置及其制造方法
JP4497791B2 (ja) *	2002-05-09	2010-07-07	株式会社ルネサステクノロジ	半導体集積回路
US6983889B2 (en) *	2003-03-21	2006-01-10	Home Comfort Zones, Inc.	Forced-air zone climate control system for existing residential houses
KR100532464B1 (ko) *	2003-08-28	2005-12-01	삼성전자주식회사	액티브를 이용한 반도체 셀의 전원선 레이아웃

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4471368A (en) *	1977-10-13	1984-09-11	Mohsen Amr M	Dynamic RAM memory and vertical charge coupled dynamic storage cell therefor
US4353085A (en) *	1978-02-27	1982-10-05	Fujitsu Limited	Integrated semiconductor device having insulated gate field effect transistors with a buried insulating film
US4246592A (en) *	1979-01-02	1981-01-20	Texas Instruments Incorporated	High density static memory cell
NL8003612A (nl) *	1980-06-23	1982-01-18	Philips Nv	Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze.
JPS5944785A (ja) *	1982-09-06	1984-03-13	松下電工株式会社	発熱装置
EP0119059B1 (de) *	1983-03-09	1988-10-05	Kabushiki Kaisha Toshiba	Integrierte Halbleiterschaltung mit Gattermatrixstruktur
JPS59163837A (ja) *	1983-03-09	1984-09-14	Toshiba Corp	半導体集積回路
JPS6035532A (ja) *	1983-07-29	1985-02-23	Fujitsu Ltd	マスタスライス集積回路装置
JPS6047441A (ja) *	1983-08-26	1985-03-14	Fujitsu Ltd	半導体集積回路
US4649413A (en) *	1983-08-29	1987-03-10	Texas Instruments Incorporated	MOS integrated circuit having a metal programmable matrix
JPH0828480B2 (ja) *	1983-09-30	1996-03-21	富士通株式会社	半導体集積回路装置
JPS60233838A (ja) *	1984-05-02	1985-11-20	Toshiba Corp	半導体集積回路装置
DE3586385T2 (de) *	1984-10-03	1993-01-07	Fujitsu Ltd	Integrierte gate-matrixstruktur.
JP2845869B2 (ja) *	1985-03-25	1999-01-13	株式会社日立製作所	半導体集積回路装置

1985
- 1985-11-19 JP JP60259396A patent/JPS62119936A/ja active Pending
1986
- 1986-11-18 KR KR1019860009743A patent/KR900003029B1/ko not_active IP Right Cessation
- 1986-11-19 EP EP86402558A patent/EP0228320B1/de not_active Expired - Lifetime
- 1986-11-19 DE DE8686402558T patent/DE3686709T2/de not_active Expired - Fee Related
1989
- 1989-08-10 US US07/393,037 patent/US4928164A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0228320B1 (de)	1992-09-09
US4928164A (en)	1990-05-22
DE3686709T2 (de)	1993-01-14
JPS62119936A (ja)	1987-06-01
KR900003029B1 (ko)	1990-05-04
EP0228320A1 (de)	1987-07-08
KR870005463A (ko)	1987-06-09

Publication	Publication Date	Title
DE3682699D1 (de)	1992-01-16	Schaltmatrix.
NL192656B (nl)	1997-07-01	Variabele matrix-decoder.
ATE77088T1 (de)	1992-06-15	8-phenylxanthine.
DE3677710D1 (de)	1991-04-04	Cefuroximaxetil-dragee.
ATE55980T1 (de)	1990-09-15	2-hydroxy-3-phenoxypropylamine.
FI863004A (fi)	1987-01-20	Oevervakningssystem.
DE3580848D1 (de)	1991-01-17	Schaltmatrix.
DE3668776D1 (de)	1990-03-15	Endotubus.
FI851514A0 (fi)	1985-04-16	Organiska foereningar.
DE3668381D1 (de)	1990-02-22	Contactlinse.
DE3586385D1 (de)	1992-08-27	Integrierte gate-matrixstruktur.
ATE50243T1 (de)	1990-02-15	Fluorbenzylester.
DE3673520D1 (de)	1990-09-20	Perfluorpolyaether.
DE3683597D1 (de)	1992-03-05	Torschaltung.
DE3669772D1 (de)	1990-04-26	Russblaeser.
DE3678338D1 (de)	1991-05-02	Planare heterouebergang-avalanche-fotodiode.
DE3686709D1 (de)	1992-10-15	Gattermatrix.
DE3678182D1 (de)	1991-04-25	Perfluorpolycycloalkane.
DE3682064D1 (de)	1991-11-21	Abstandshalter.
FI862717A (fi)	1986-12-27	Foerbaettrat kollagenkorvskal.
FI861481A (fi)	1987-03-05	Blekmedel foer traematerial.
DE3677472D1 (de)	1991-03-14	Blockierverhinderer.
FI860726A0 (fi)	1986-02-18	Korrosionsbestaendig betong.
DE3687425D1 (de)	1993-02-18	Transistoranordnung.
ATA63286A (de)	1990-04-15	Sektionaltor

Legal Events

Date	Code	Title	Description
1993-10-07	8364	No opposition during term of opposition
1994-11-10	8339	Ceased/non-payment of the annual fee