DE3788573D1 - Halbleiterspeicher. - Google Patents

Halbleiterspeicher.

Info

Publication number: DE3788573D1
Authority: DE; Germany
Prior art keywords: semiconductor memory; semiconductor; memory
Prior art date: 1986-01-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE87300389T

Other languages

English (en)

Other versions

DE3788573T2 (de

Inventor

Masaki C O Patent Divi Ogihara

Yoshio C O Patent Divisi Okada

Shuso C O Patent Divisio Fujii

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Toshiba Electronic Device Solutions Corp

Original Assignee

Toshiba Corp

Toshiba Microelectronics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-01-17

Filing date

1987-01-16

Publication date

1994-02-10

1987-01-16 Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp

1994-02-10 Publication of DE3788573D1 publication Critical patent/DE3788573D1/de

1994-05-26 Application granted granted Critical

1994-05-26 Publication of DE3788573T2 publication Critical patent/DE3788573T2/de

2007-01-17 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Dram (AREA)

DE3788573T 1986-01-17 1987-01-16 Halbleiterspeicher. Expired - Lifetime DE3788573T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61007271A JPS62165787A (ja)	1986-01-17	1986-01-17	半導体記憶装置

Publications (2)

Publication Number	Publication Date
DE3788573D1 true DE3788573D1 (de)	1994-02-10
DE3788573T2 DE3788573T2 (de)	1994-05-26

Family

ID=11661364

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE3788573T Expired - Lifetime DE3788573T2 (de)	1986-01-17	1987-01-16	Halbleiterspeicher.

Country Status (4)

Country	Link
EP (1)	EP0230385B1 (de)
JP (1)	JPS62165787A (de)
KR (1)	KR870007517A (de)
DE (1)	DE3788573T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3061060B2 (ja) *	1989-09-05	2000-07-10	株式会社東芝	マルチポートメモリ
JP2640543B2 (ja) *	1989-11-01	1997-08-13	日鉄セミコンダクター株式会社	半導体記憶装置
JPH03160684A (ja) *	1989-11-17	1991-07-10	Sanyo Electric Co Ltd	半導体記憶装置
JP3101298B2 (ja) *	1990-03-30	2000-10-23	株式会社東芝	半導体メモリ装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4291392A (en) *	1980-02-06	1981-09-22	Mostek Corporation	Timing of active pullup for dynamic semiconductor memory
JPS6045499B2 (ja) *	1980-04-15	1985-10-09	富士通株式会社	半導体記憶装置
JPS5771581A (en) *	1980-10-22	1982-05-04	Toshiba Corp	Active boosting circuit
JPS58189898A (ja) *	1982-04-30	1983-11-05	Toshiba Corp	ダイナミツク記憶装置
JPS5945692A (ja) *	1982-09-09	1984-03-14	Nec Corp	メモリ回路

1986
- 1986-01-17 JP JP61007271A patent/JPS62165787A/ja active Granted
1987
- 1987-01-16 KR KR870000302A patent/KR870007517A/ko not_active Withdrawn
- 1987-01-16 EP EP87300389A patent/EP0230385B1/de not_active Expired - Lifetime
- 1987-01-16 DE DE3788573T patent/DE3788573T2/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPH054753B2 (de)	1993-01-20
EP0230385B1 (de)	1993-12-29
EP0230385A3 (en)	1989-10-25
DE3788573T2 (de)	1994-05-26
KR870007517A (ko)	1987-08-19
JPS62165787A (ja)	1987-07-22
EP0230385A2 (de)	1987-07-29

Publication	Publication Date	Title
DE3751002D1 (de)	1995-03-02	Halbleiterspeicher.
DE3778439D1 (de)	1992-05-27	Halbleiterspeicheranordnung.
DE3788747D1 (de)	1994-02-24	Halbleiterspeicher.
DE68911044D1 (de)	1994-01-13	Halbleiterspeicher.
DE3778067D1 (de)	1992-05-14	Zweitor-halbleiterspeicheranordnung.
DE3686994D1 (de)	1992-11-26	Halbleiterspeicher.
DE3687322D1 (de)	1993-02-04	Halbleiterspeicheranordnung.
DE3785509D1 (de)	1993-05-27	Nichtfluechtige halbleiterspeicheranordnung.
DE3786819D1 (de)	1993-09-09	Nichtfluechtige halbleiterspeicheranordnung.
DE3772137D1 (de)	1991-09-19	Halbleiter-speicheranordnung.
DE3771238D1 (de)	1991-08-14	Halbleiterspeicher.
DE3778408D1 (de)	1992-05-27	Halbleiterspeicheranordnung.
DE3787616D1 (de)	1993-11-04	Halbleiterspeicheranordnung.
DE3576236D1 (de)	1990-04-05	Halbleiterspeicheranordnung.
DE3675445D1 (de)	1990-12-13	Halbleiterspeicheranordnung.
DE3680562D1 (de)	1991-09-05	Halbleiterspeicheranordnung.
DE68918193D1 (de)	1994-10-20	Halbleiterspeicher.
DE3577367D1 (de)	1990-05-31	Halbleiterspeicheranordnung.
DE3783666D1 (de)	1993-03-04	Halbleiterspeicheranordnung.
DE3575225D1 (de)	1990-02-08	Halbleiterspeicheranordnung.
DE3887823D1 (de)	1994-03-24	Halbleiterspeicher.
DE3576754D1 (de)	1990-04-26	Halbleiterspeicheranordnung.
DE3783493D1 (de)	1993-02-25	Halbleiterspeicheranordnung.
DE3789783D1 (de)	1994-06-16	Halbleiterspeicheranordnung.
DE68923899D1 (de)	1995-09-28	Halbleiterspeicher.

Legal Events

Date	Code	Title	Description
1995-02-02	8364	No opposition during term of opposition