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DE3546487A1 - - Google Patents

Info

Publication number
DE3546487A1
DE3546487A1 DE19853546487 DE3546487A DE3546487A1 DE 3546487 A1 DE3546487 A1 DE 3546487A1 DE 19853546487 DE19853546487 DE 19853546487 DE 3546487 A DE3546487 A DE 3546487A DE 3546487 A1 DE3546487 A1 DE 3546487A1
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853546487
Other versions
DE3546487C2 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE3546487A1 publication Critical patent/DE3546487A1/de
Application granted granted Critical
Publication of DE3546487C2 publication Critical patent/DE3546487C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors
DE3546487A 1984-03-29 1985-03-26 Expired DE3546487C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59059525A JPH0666446B2 (ja) 1984-03-29 1984-03-29 固体撮像素子

Publications (2)

Publication Number Publication Date
DE3546487A1 true DE3546487A1 (de) 1986-09-18
DE3546487C2 DE3546487C2 (de) 1988-09-15

Family

ID=13115768

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3510965A Expired DE3510965C2 (de) 1984-03-29 1985-03-26 Bildelement für einen Festkörper-Bildsensor
DE3546487A Expired DE3546487C2 (de) 1984-03-29 1985-03-26

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE3510965A Expired DE3510965C2 (de) 1984-03-29 1985-03-26 Bildelement für einen Festkörper-Bildsensor

Country Status (4)

Country Link
US (1) US4878120A (de)
JP (1) JPH0666446B2 (de)
DE (2) DE3510965C2 (de)
FR (1) FR2563657B1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60229368A (ja) * 1984-04-27 1985-11-14 Olympus Optical Co Ltd 固体撮像装置
JPS61136388A (ja) * 1984-11-21 1986-06-24 Olympus Optical Co Ltd 固体撮像装置
JPH0682816B2 (ja) * 1985-05-20 1994-10-19 松下電子工業株式会社 固体撮像装置
JPS6312161A (ja) * 1986-07-03 1988-01-19 Olympus Optical Co Ltd 半導体撮像装置
JPH01133493A (ja) * 1987-11-19 1989-05-25 Olympus Optical Co Ltd 固体撮像装置
US4951106A (en) * 1988-03-24 1990-08-21 Tektronix, Inc. Detector device for measuring the intensity of electromagnetic radiation
US5061918A (en) * 1989-10-02 1991-10-29 The Texas A&M University System Sound emitting device for behavior modification
US5502488A (en) * 1991-05-07 1996-03-26 Olympus Optical Co., Ltd. Solid-state imaging device having a low impedance structure
US5307169A (en) * 1991-05-07 1994-04-26 Olympus Optical Co., Ltd. Solid-state imaging device using high relative dielectric constant material as insulating film
US5486711A (en) * 1993-06-25 1996-01-23 Nikon Corporation Solid-state image sensor with overlapping split gate electrodes
DE4321789C2 (de) * 1993-06-30 1999-12-09 Siemens Ag Festkörperbildwandler
US6072528A (en) * 1993-09-13 2000-06-06 Olympus Optical Co., Ltd. Solid state image sensor
DE4331391A1 (de) * 1993-09-15 1995-03-16 Josef Dr Kemmer Halbleiter(detektor)struktur
DE4331392A1 (de) * 1993-09-15 1995-03-16 Josef Dr Kemmer Unipolartransistor mit integrierter Rücksetzstruktur
US5578814A (en) * 1993-09-29 1996-11-26 Intronix, Inc. Sensor device for storing electromagnetic radiation and for transforming such into electric signals
US5428216A (en) * 1993-09-29 1995-06-27 Ornetics International, Inc. Opto-electronic sensor device using a transparent injecting electrode to block outside radiation
US6873362B1 (en) * 1995-03-22 2005-03-29 Sony Corporation Scanning switch transistor for solid-state imaging device
JPH08313215A (ja) * 1995-05-23 1996-11-29 Olympus Optical Co Ltd ２次元距離センサ
JPH09102609A (ja) * 1995-08-03 1997-04-15 Seiko Instr Inc 半導体装置
DE19631385A1 (de) * 1996-08-02 1998-02-05 Siemens Ag Festkörper-Bildwandler
US6051857A (en) 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
TW494574B (en) 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
US6545331B1 (en) 1999-12-10 2003-04-08 Innotech Corporation Solid state imaging device, manufacturing method thereof, and solid state imaging apparatus
US6950134B2 (en) 2000-02-22 2005-09-27 Innotech Corporation Method of preventing transfer and storage of non-optically generated charges in solid state imaging device
US6448596B1 (en) 2000-08-15 2002-09-10 Innotech Corporation Solid-state imaging device
JP3554703B2 (ja) * 2000-10-12 2004-08-18 リバーベル株式会社 情報端末装置
GB2374200A (en) * 2000-12-21 2002-10-09 Europ Org For Nuclear Research Radiation tolerant MOS layout
JP4109858B2 (ja) * 2001-11-13 2008-07-02 株式会社東芝 固体撮像装置
JP3900992B2 (ja) * 2002-04-02 2007-04-04 株式会社日立製作所 放射線検出器及び放射線検査装置
US20050023570A1 (en) * 2003-07-29 2005-02-03 Eastman Kodak Company Image sensor with transparent transistor gates
JP4744807B2 (ja) * 2004-01-06 2011-08-10 パナソニック株式会社 半導体集積回路装置
US7193257B2 (en) 2004-01-29 2007-03-20 Victor Company Of Japan, Ltd. Solid state image sensing device and manufacturing and driving methods thereof
JP4187691B2 (ja) * 2004-06-29 2008-11-26 富士通マイクロエレクトロニクス株式会社 閾値変調型イメージセンサ
JP4655785B2 (ja) * 2005-07-06 2011-03-23 日本ビクター株式会社 固体撮像素子の駆動方法
US7262400B2 (en) * 2005-12-02 2007-08-28 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device having an active layer overlying a substrate and an isolating region in the active layer
GB2445313B (en) 2006-02-14 2011-03-23 Nat Inst Of Advanced Ind Scien Photo field effect transistor and integrated photodetector using same
KR100889483B1 (ko) * 2006-10-20 2009-03-19 한국전자통신연구원 저전압 동작 특성 향상을 위한 이미지 센서
JP5167799B2 (ja) 2007-12-18 2013-03-21 ソニー株式会社 固体撮像装置およびカメラ
CN103189983B (zh) * 2008-07-17 2016-10-26 微软国际控股私有有限公司 具有改善的电荷检出单元和像素几何结构的cmos光栅3d照相机系统
US10529753B2 (en) 2015-11-03 2020-01-07 Sensors Unlimited, Inc. Pixels
JP7149616B2 (ja) 2017-03-19 2022-10-07 コヴィルタ オサケイティエ 変調画像取り込みのためのシステム及び方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0096725A1 (de) * 1981-12-17 1983-12-28 NISHIZAWA, Junichi Halbleiterbildaufnahmevorrichtung
DE3446972A1 (de) * 1983-12-28 1985-07-18 Olympus Optical Co., Ltd., Tokio/Tokyo Photoelektrischer halbleiter-wandler

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941351B2 (ja) * 1976-09-13 1984-10-06 株式会社日立製作所 カラ−用固体撮像素子
US4326210A (en) * 1977-09-26 1982-04-20 Sharp Kabushiki Kaisha Light-responsive field effect mode semiconductor devices
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
JPS55124259A (en) * 1979-03-19 1980-09-25 Semiconductor Res Found Semiconductor device
US4571626A (en) * 1981-09-17 1986-02-18 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus
JPS59107578A (ja) * 1982-12-11 1984-06-21 Junichi Nishizawa 半導体光電変換装置
JPS59107570A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59108461A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
JPH0744661B2 (ja) * 1982-12-14 1995-05-15 オリンパス光学工業株式会社 固体撮像装置
JPS59148473A (ja) * 1983-02-14 1984-08-25 Junichi Nishizawa ２次元固体撮像装置の読出し方法
JPS59153381A (ja) * 1983-02-22 1984-09-01 Junichi Nishizawa ２次元固体撮像装置
JPS59188278A (ja) * 1983-04-08 1984-10-25 Hamamatsu Photonics Kk 半導体撮像装置
JPS6058781A (ja) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd 固体撮像装置
JPS614376A (ja) * 1984-06-19 1986-01-10 Olympus Optical Co Ltd 固体撮像装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0096725A1 (de) * 1981-12-17 1983-12-28 NISHIZAWA, Junichi Halbleiterbildaufnahmevorrichtung
DE3446972A1 (de) * 1983-12-28 1985-07-18 Olympus Optical Co., Ltd., Tokio/Tokyo Photoelektrischer halbleiter-wandler

Also Published As

Publication number Publication date
JPS60206063A (ja) 1985-10-17
JPH0666446B2 (ja) 1994-08-24
DE3510965A1 (de) 1985-10-03
DE3546487C2 (de) 1988-09-15
DE3510965C2 (de) 1987-01-02
FR2563657A1 (fr) 1985-10-31
FR2563657B1 (fr) 1988-02-05
US4878120A (en) 1989-10-31

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