DE3244488C2 - - Google Patents
Info
- Publication number
- DE3244488C2 DE3244488C2 DE3244488A DE3244488A DE3244488C2 DE 3244488 C2 DE3244488 C2 DE 3244488C2 DE 3244488 A DE3244488 A DE 3244488A DE 3244488 A DE3244488 A DE 3244488A DE 3244488 C2 DE3244488 C2 DE 3244488C2
- Authority
- DE
- Germany
- Prior art keywords
- cells
- substrate
- cell
- charge
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 58
- 238000007667 floating Methods 0.000 claims description 51
- 238000002347 injection Methods 0.000 claims description 26
- 239000007924 injection Substances 0.000 claims description 26
- 239000003990 capacitor Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000006870 function Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229920006395 saturated elastomer Polymers 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 157
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000001133 acceleration Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000012217 deletion Methods 0.000 description 3
- 230000037430 deletion Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/812—Charge-trapping diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/901—MOSFET substrate bias
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/327,474 US4432075A (en) | 1981-12-04 | 1981-12-04 | Electrically programmable non-volatile memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3244488A1 DE3244488A1 (de) | 1983-06-16 |
| DE3244488C2 true DE3244488C2 (fr) | 1992-04-23 |
Family
ID=23276693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823244488 Granted DE3244488A1 (de) | 1981-12-04 | 1982-12-01 | Elektrisch programmierbarer permanenter speicher |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4432075A (fr) |
| JP (1) | JPS58106874A (fr) |
| DE (1) | DE3244488A1 (fr) |
| GB (1) | GB2113004B (fr) |
| IL (1) | IL67405A (fr) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4493057A (en) * | 1980-01-07 | 1985-01-08 | Texas Instruments Incorporated | Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like |
| JPS59161873A (ja) * | 1983-03-07 | 1984-09-12 | Agency Of Ind Science & Technol | 半導体不揮発性メモリ |
| US4590503A (en) * | 1983-07-21 | 1986-05-20 | Honeywell Inc. | Electrically erasable programmable read only memory |
| JPH0799637B2 (ja) * | 1986-02-26 | 1995-10-25 | 三菱電機株式会社 | 半導体記憶装置 |
| US5033023A (en) * | 1988-04-08 | 1991-07-16 | Catalyst Semiconductor, Inc. | High density EEPROM cell and process for making the cell |
| US5216269A (en) * | 1989-03-31 | 1993-06-01 | U.S. Philips Corp. | Electrically-programmable semiconductor memories with buried injector region |
| US4953928A (en) * | 1989-06-09 | 1990-09-04 | Synaptics Inc. | MOS device for long-term learning |
| US5336936A (en) * | 1992-05-06 | 1994-08-09 | Synaptics, Incorporated | One-transistor adaptable analog storage element and array |
| US5627091A (en) * | 1994-06-01 | 1997-05-06 | United Microelectronics Corporation | Mask ROM process for making a ROM with a trench shaped channel |
| US5541876A (en) * | 1994-06-01 | 1996-07-30 | United Microelectronics Corporation | Memory cell fabricated by floating gate structure |
| US5814853A (en) * | 1996-01-22 | 1998-09-29 | Advanced Micro Devices, Inc. | Sourceless floating gate memory device and method of storing data |
| US6026017A (en) * | 1997-04-11 | 2000-02-15 | Programmable Silicon Solutions | Compact nonvolatile memory |
| KR100251226B1 (ko) * | 1997-12-06 | 2000-05-01 | 윤종용 | 불휘발성 반도체 메모리를 소거하는 회로 및 방법 |
| US7092288B2 (en) * | 2004-02-04 | 2006-08-15 | Atmel Corporation | Non-volatile memory array with simultaneous write and erase feature |
| US7301197B2 (en) * | 2004-09-21 | 2007-11-27 | Atmel Corporation | Non-volatile nanocrystal memory transistors using low voltage impact ionization |
| US7020020B1 (en) * | 2004-09-21 | 2006-03-28 | Atmel Corporation | Low voltage non-volatile memory cells using twin bit line current sensing |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915379A (fr) * | 1972-05-18 | 1974-02-09 | ||
| US4016588A (en) * | 1974-12-27 | 1977-04-05 | Nippon Electric Company, Ltd. | Non-volatile semiconductor memory device |
| US4037242A (en) * | 1975-12-29 | 1977-07-19 | Texas Instruments Incorporated | Dual injector, floating gate MOS electrically alterable, non-volatile semiconductor memory device |
| JPS609673B2 (ja) * | 1977-01-12 | 1985-03-12 | 日本電気株式会社 | 半導体記憶装置 |
| JPS5388583A (en) * | 1977-01-13 | 1978-08-04 | Nec Corp | Non-volatile memory element |
-
1981
- 1981-12-04 US US06/327,474 patent/US4432075A/en not_active Expired - Lifetime
-
1982
- 1982-11-19 GB GB08233041A patent/GB2113004B/en not_active Expired
- 1982-12-01 DE DE19823244488 patent/DE3244488A1/de active Granted
- 1982-12-03 JP JP57212610A patent/JPS58106874A/ja active Pending
- 1982-12-03 IL IL67405A patent/IL67405A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| IL67405A (en) | 1986-02-28 |
| IL67405A0 (en) | 1983-05-15 |
| GB2113004A (en) | 1983-07-27 |
| JPS58106874A (ja) | 1983-06-25 |
| US4432075A (en) | 1984-02-14 |
| DE3244488A1 (de) | 1983-06-16 |
| GB2113004B (en) | 1986-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |