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DE3071906D1 - A method of manufacturing a semiconductor device - Google Patents

A method of manufacturing a semiconductor device

Info

Publication number
DE3071906D1
DE3071906D1 DE8080304117T DE3071906T DE3071906D1 DE 3071906 D1 DE3071906 D1 DE 3071906D1 DE 8080304117 T DE8080304117 T DE 8080304117T DE 3071906 T DE3071906 T DE 3071906T DE 3071906 D1 DE3071906 D1 DE 3071906D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080304117T
Other languages
English (en)
Inventor
Hiromu Enomoto
Yasushi Yasuda
Yoshiharu Mitono
Taketo Imaizumi
Hitoshi Ohmichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3071906D1 publication Critical patent/DE3071906D1/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133Emitter regions of BJTs
    • H10D62/135Non-interconnected multi-emitter structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • H10D84/901Masterslice integrated circuits comprising bipolar technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
DE8080304117T 1979-11-20 1980-11-18 A method of manufacturing a semiconductor device Expired DE3071906D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15030779A JPS5690548A (en) 1979-11-20 1979-11-20 Manufacture of semiconductor device by master slice system

Publications (1)

Publication Number Publication Date
DE3071906D1 true DE3071906D1 (en) 1987-03-12

Family

ID=15494139

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080304117T Expired DE3071906D1 (en) 1979-11-20 1980-11-18 A method of manufacturing a semiconductor device

Country Status (6)

Country Link
US (1) US4388755A (de)
EP (1) EP0029369B1 (de)
JP (1) JPS5690548A (de)
CA (1) CA1141869A (de)
DE (1) DE3071906D1 (de)
IE (1) IE52447B1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
JPS5830235A (ja) * 1981-08-18 1983-02-22 Fujitsu Ltd ゲ−トアレイ
FR2524206B1 (fr) * 1982-03-26 1985-12-13 Thomson Csf Mat Tel Circuit integre prediffuse, et procede d'interconnexion des cellules de ce circuit
JPS58213448A (ja) * 1982-06-07 1983-12-12 Hitachi Ltd 負荷駆動方式
KR870009476A (ko) * 1986-03-31 1987-10-27 이그자 코오포레이숀 프로그램 가능 트랜지스터 및 그의 제조방법
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
GB2196787A (en) * 1986-10-31 1988-05-05 Stc Plc Semiconductor chip manufacture
JPH03218668A (ja) * 1989-11-24 1991-09-26 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
JP2953755B2 (ja) * 1990-07-16 1999-09-27 株式会社東芝 マスタスライス方式の半導体装置
JP3145694B2 (ja) * 1990-08-28 2001-03-12 日本電気株式会社 半導体装置
CA2119523C (en) * 1994-03-21 1998-12-08 Clinton Cedric Norrad Animal trap
US6236072B1 (en) * 1998-11-12 2001-05-22 Telefonaktiebolaget Lm Ericsson (Publ) Method and system for emitter partitioning for SiGe RF power transistors
JP2003045882A (ja) 2001-07-27 2003-02-14 Nec Corp 半導体装置及びその設計方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3747088A (en) * 1970-12-30 1973-07-17 Analog Devices Inc Solid state digital to analog converter
US3884732A (en) * 1971-07-29 1975-05-20 Ibm Monolithic storage array and method of making
US3995304A (en) * 1972-01-10 1976-11-30 Teledyne, Inc. D/A bit switch
JPS5613383B2 (de) * 1973-10-31 1981-03-27
US3895977A (en) * 1973-12-20 1975-07-22 Harris Corp Method of fabricating a bipolar transistor
JPS51149776A (en) * 1975-06-17 1976-12-22 Mitsubishi Electric Corp Semiconductor device for power
JPS5393787A (en) * 1977-01-27 1978-08-17 Nec Home Electronics Ltd Production of semiconductor
JPS53147485A (en) * 1977-05-27 1978-12-22 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS54101281A (en) * 1978-01-26 1979-08-09 Nec Corp Logic circuit
JPS5561059A (en) * 1978-10-31 1980-05-08 Nec Corp Semiconductor ic device

Also Published As

Publication number Publication date
EP0029369B1 (de) 1987-02-04
JPS5690548A (en) 1981-07-22
IE52447B1 (en) 1987-11-11
IE802401L (en) 1981-05-20
CA1141869A (en) 1983-02-22
JPS6349376B2 (de) 1988-10-04
EP0029369A3 (en) 1983-06-22
EP0029369A2 (de) 1981-05-27
US4388755A (en) 1983-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee