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DE2327085C3 - Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen - Google Patents

Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen

Info

Publication number
DE2327085C3
DE2327085C3 DE732327085A DE2327085A DE2327085C3 DE 2327085 C3 DE2327085 C3 DE 2327085C3 DE 732327085 A DE732327085 A DE 732327085A DE 2327085 A DE2327085 A DE 2327085A DE 2327085 C3 DE2327085 C3 DE 2327085C3
Authority
DE
Germany
Prior art keywords
doping
rod
nozzle
zone melting
free zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE732327085A
Other languages
German (de)
English (en)
Other versions
DE2327085A1 (de
DE2327085B2 (de
Inventor
Ludwig 8000 Muenchen Sporrer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE732327085A priority Critical patent/DE2327085C3/de
Priority to US447745A priority patent/US3908586A/en
Priority to DK286274A priority patent/DK286274A/da
Priority to BE144810A priority patent/BE815609A/fr
Priority to IT23240/74A priority patent/IT1012869B/it
Priority to JP6015274A priority patent/JPS5336403B2/ja
Publication of DE2327085A1 publication Critical patent/DE2327085A1/de
Publication of DE2327085B2 publication Critical patent/DE2327085B2/de
Application granted granted Critical
Publication of DE2327085C3 publication Critical patent/DE2327085C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE732327085A 1973-05-28 1973-05-28 Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen Expired DE2327085C3 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE732327085A DE2327085C3 (de) 1973-05-28 1973-05-28 Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen
US447745A US3908586A (en) 1973-05-28 1974-03-04 Apparatus for doping semiconductor rods during floating zone melt processing thereof
DK286274A DK286274A (fr) 1973-05-28 1974-05-27
BE144810A BE815609A (fr) 1973-05-28 1974-05-28 Dispositif de dopage de matiere semi-conductrice lors d'une fusion par zones sans creuset
IT23240/74A IT1012869B (it) 1973-05-28 1974-05-28 Dispositivo per drogare un materia le semiconduttore nella fusione a zona progressiva senza crogiuolo
JP6015274A JPS5336403B2 (fr) 1973-05-28 1974-05-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE732327085A DE2327085C3 (de) 1973-05-28 1973-05-28 Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen

Publications (3)

Publication Number Publication Date
DE2327085A1 DE2327085A1 (de) 1974-12-19
DE2327085B2 DE2327085B2 (de) 1978-07-20
DE2327085C3 true DE2327085C3 (de) 1979-03-08

Family

ID=5882335

Family Applications (1)

Application Number Title Priority Date Filing Date
DE732327085A Expired DE2327085C3 (de) 1973-05-28 1973-05-28 Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen

Country Status (6)

Country Link
US (1) US3908586A (fr)
JP (1) JPS5336403B2 (fr)
BE (1) BE815609A (fr)
DE (1) DE2327085C3 (fr)
DK (1) DK286274A (fr)
IT (1) IT1012869B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4556448A (en) * 1983-10-19 1985-12-03 International Business Machines Corporation Method for controlled doping of silicon crystals by improved float zone technique
DE3518073A1 (de) * 1985-05-20 1986-11-20 Siemens AG, 1000 Berlin und 8000 München Anordnung zum dotieren von halbleiterstaeben mit festen dotierstoffen
JP4934829B2 (ja) * 2007-09-06 2012-05-23 株式会社やまびこ エンジンユニット
JP4957600B2 (ja) * 2008-03-18 2012-06-20 信越半導体株式会社 Ｆｚ法による半導体結晶製造方法および半導体結晶製造装置
JP2017141130A (ja) * 2016-02-09 2017-08-17 信越半導体株式会社 半導体単結晶の製造方法及び半導体単結晶の製造装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2550899A (en) * 1948-03-16 1951-05-01 United States Steel Corp Apparatus for cooling mill rolls
NL266156A (fr) * 1960-06-24
US3606171A (en) * 1970-03-06 1971-09-20 Walter D Voelker Injection nozzle of adjustable length

Also Published As

Publication number Publication date
IT1012869B (it) 1977-03-10
JPS5336403B2 (fr) 1978-10-03
JPS5020907A (fr) 1975-03-05
US3908586A (en) 1975-09-30
DE2327085A1 (de) 1974-12-19
BE815609A (fr) 1974-09-16
DE2327085B2 (de) 1978-07-20
DK286274A (fr) 1975-01-20

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee