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JPS5020907A - - Google Patents

Info

Publication number
JPS5020907A
JPS5020907A JP49060152A JP6015274A JPS5020907A JP S5020907 A JPS5020907 A JP S5020907A JP 49060152 A JP49060152 A JP 49060152A JP 6015274 A JP6015274 A JP 6015274A JP S5020907 A JPS5020907 A JP S5020907A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49060152A
Other languages
Japanese (ja)
Other versions
JPS5336403B2 (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5020907A publication Critical patent/JPS5020907A/ja
Publication of JPS5336403B2 publication Critical patent/JPS5336403B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP6015274A 1973-05-28 1974-05-28 Expired JPS5336403B2 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE732327085A DE2327085C3 (de) 1973-05-28 1973-05-28 Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen

Publications (2)

Publication Number Publication Date
JPS5020907A true JPS5020907A (fr) 1975-03-05
JPS5336403B2 JPS5336403B2 (fr) 1978-10-03

Family

ID=5882335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6015274A Expired JPS5336403B2 (fr) 1973-05-28 1974-05-28

Country Status (6)

Country Link
US (1) US3908586A (fr)
JP (1) JPS5336403B2 (fr)
BE (1) BE815609A (fr)
DE (1) DE2327085C3 (fr)
DK (1) DK286274A (fr)
IT (1) IT1012869B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009062878A (ja) * 2007-09-06 2009-03-26 Kioritz Corp エンジンユニット
JP2009221079A (ja) * 2008-03-18 2009-10-01 Shin Etsu Handotai Co Ltd Ｆｚ法による半導体結晶製造方法および半導体結晶製造装置
JP2017141130A (ja) * 2016-02-09 2017-08-17 信越半導体株式会社 半導体単結晶の製造方法及び半導体単結晶の製造装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4556448A (en) * 1983-10-19 1985-12-03 International Business Machines Corporation Method for controlled doping of silicon crystals by improved float zone technique
DE3518073A1 (de) * 1985-05-20 1986-11-20 Siemens AG, 1000 Berlin und 8000 München Anordnung zum dotieren von halbleiterstaeben mit festen dotierstoffen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2550899A (en) * 1948-03-16 1951-05-01 United States Steel Corp Apparatus for cooling mill rolls
NL266156A (fr) * 1960-06-24
US3606171A (en) * 1970-03-06 1971-09-20 Walter D Voelker Injection nozzle of adjustable length

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009062878A (ja) * 2007-09-06 2009-03-26 Kioritz Corp エンジンユニット
JP2009221079A (ja) * 2008-03-18 2009-10-01 Shin Etsu Handotai Co Ltd Ｆｚ法による半導体結晶製造方法および半導体結晶製造装置
JP2017141130A (ja) * 2016-02-09 2017-08-17 信越半導体株式会社 半導体単結晶の製造方法及び半導体単結晶の製造装置

Also Published As

Publication number Publication date
IT1012869B (it) 1977-03-10
JPS5336403B2 (fr) 1978-10-03
US3908586A (en) 1975-09-30
DE2327085A1 (de) 1974-12-19
BE815609A (fr) 1974-09-16
DE2327085B2 (de) 1978-07-20
DK286274A (fr) 1975-01-20
DE2327085C3 (de) 1979-03-08

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