[go: up one dir, main page]

CN202979452U - Plasma discharge device - Google Patents

Plasma discharge device Download PDF

Info

Publication number
CN202979452U
CN202979452U CN 201220720322 CN201220720322U CN202979452U CN 202979452 U CN202979452 U CN 202979452U CN 201220720322 CN201220720322 CN 201220720322 CN 201220720322 U CN201220720322 U CN 201220720322U CN 202979452 U CN202979452 U CN 202979452U
Authority
CN
China
Prior art keywords
gas
radio frequency
plasma
uniform gas
board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201220720322
Other languages
Chinese (zh)
Inventor
贾少霞
张宸
杨景华
王守国
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Core Microelectronics Technology Chengdu Co ltd
Original Assignee
Institute of Microelectronics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Microelectronics of CAS filed Critical Institute of Microelectronics of CAS
Priority to CN 201220720322 priority Critical patent/CN202979452U/en
Application granted granted Critical
Publication of CN202979452U publication Critical patent/CN202979452U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Plasma Technology (AREA)

Abstract

本实用新型公开一种等离子体放电装置,包括两个射频电极、介质阻挡层、匀气板、气源、射频电源和金属外壳;所述射频电源与所述射频电极连接;放电装置在工作时,所述金属外壳接地;所述射频电极被介质阻挡层包覆;两个射频电极之间为等离子体喷口;所述匀气板位于所述介质阻挡层上方;所述气源提供的工作气体通过由所述匀气板构成的收缩口,到达所述等离子体喷口,并在常压下,电源接通后,在所述喷口处形成大面积的辉光等离子体,等离子体在气流的携带下向外喷出。本实用新型避免了散射性放电,提高了放电效率,提高了气流速率,增大等离子体喷出喷口的长度,降低了装置对被处理材料的形状等要求。

The utility model discloses a plasma discharge device, which comprises two radio frequency electrodes, a dielectric barrier layer, a gas uniform plate, a gas source, a radio frequency power supply and a metal shell; the radio frequency power supply is connected with the radio frequency electrode; the discharge device is in operation , the metal shell is grounded; the radio frequency electrode is covered by a dielectric barrier layer; the plasma nozzle is between the two radio frequency electrodes; the gas uniform plate is located above the dielectric barrier layer; the working gas provided by the gas source Through the constriction port formed by the gas uniform plate, it reaches the plasma nozzle, and under normal pressure, after the power is turned on, a large area of glow plasma is formed at the nozzle, and the plasma is carried by the airflow. Spray down and out. The utility model avoids the scattered discharge, improves the discharge efficiency, increases the air flow rate, increases the length of the plasma ejection nozzle, and reduces the requirements of the device on the shape of the material to be processed.

Description

等离子体放电装置plasma discharge device

技术领域technical field

本实用新型涉及硅片清洗技术领域,特别涉及一种等离子体放电装置。The utility model relates to the technical field of silicon chip cleaning, in particular to a plasma discharge device.

背景技术Background technique

在半导体生产中,清洗硅片表面光刻胶工艺占据了十分重要的环节,清洗的好坏直接影响器件的稳定性和可靠性。在其他行业中,液晶玻璃平板、PCB板等材料表面除了需要清洗表面有机污染物外,还需要改善材料表面的亲水性或疏水性。In semiconductor production, the process of cleaning photoresist on the surface of silicon wafers occupies a very important link. The quality of cleaning directly affects the stability and reliability of devices. In other industries, in addition to cleaning surface organic pollutants, the surface of liquid crystal glass panels, PCB boards and other materials also needs to improve the hydrophilicity or hydrophobicity of the material surface.

传统清洗硅片表面的方式是采用湿法化学方法,湿法化学方法存在许多亟待解决的问题,例如清洗不够彻底、清洗产生的废液易对环境造成污染、采用溶液容易引进杂质、消耗大量的水和酸等。目前已经出现了一种干法清洗装置,这种清洗装置工作在真空状态下,需要不断切断设备工作,取出硅片,放入另一批硅片,抽真空,然后进行放电清洗,导致设备操作复杂、成本高,不能实现连续在线工作;此外,已经出现的一些常压清洗技术采用了金属电极,存在易引入金属杂质的缺点。The traditional way to clean the surface of silicon wafers is to use wet chemical methods. There are many problems that need to be solved urgently in wet chemical methods, such as insufficient cleaning, the waste liquid generated by cleaning is easy to pollute the environment, the use of solutions is easy to introduce impurities, and consumes a lot of water. water and acid etc. At present, a dry cleaning device has appeared. This cleaning device works in a vacuum state. It is necessary to continuously cut off the equipment, take out the silicon wafers, put in another batch of silicon wafers, vacuumize, and then perform discharge cleaning, resulting in equipment operation. It is complicated and costly, and continuous online work cannot be realized; in addition, some atmospheric pressure cleaning technologies that have appeared use metal electrodes, which have the disadvantage of being easy to introduce metal impurities.

实用新型内容Utility model content

本实用新型所要解决的技术问题是提供一种等离子体放电装置。The technical problem to be solved by the utility model is to provide a plasma discharge device.

为解决上述技术问题,本实用新型提供了一种等离子体放电装置,包括两个射频电极、介质阻挡层、匀气板、气源、射频电源和金属外壳;所述射频电源与所述射频电极连接;In order to solve the above technical problems, the utility model provides a plasma discharge device, which includes two radio frequency electrodes, a dielectric barrier, a gas uniform plate, a gas source, a radio frequency power supply and a metal casing; the radio frequency power supply and the radio frequency electrode connect;

放电装置在工作时,所述金属外壳接地;When the discharge device is working, the metal casing is grounded;

所述射频电极被介质阻挡层包覆;The radio frequency electrode is covered by a dielectric barrier layer;

两个射频电极之间为等离子体喷口;Between the two radio frequency electrodes is the plasma nozzle;

所述匀气板位于所述介质阻挡层上方;The gas distribution plate is located above the dielectric barrier layer;

所述气源提供的工作气体通过由所述匀气板构成的收缩口,到达所述等离子体喷口,并在常压下,电源接通后,在所述喷口处形成大面积的辉光等离子体,等离子体在气流的携带下向外喷出。The working gas provided by the gas source passes through the constriction port formed by the gas uniform plate, reaches the plasma nozzle, and under normal pressure, after the power is turned on, a large area of glow plasma is formed at the nozzle. body, the plasma is ejected outwards under the airflow.

进一步地,所述匀气板分为三层,其中,靠近所述射频电极的一层匀气板设置有用于收缩气流的出口,使得工作气体通过所述第三出口后到达射频电极之间的喷口。Further, the gas homogenization plate is divided into three layers, wherein, the gas homogenization plate near the radio frequency electrodes is provided with an outlet for shrinking air flow, so that the working gas reaches the gap between the radio frequency electrodes after passing through the third outlet. spout.

进一步地,第一层匀气板由两个匀气板构成,该两个匀气板之间设置有气体出口,该两个该匀气板与所述金属外壳之间均设置有气体出口;Further, the first layer of gas uniform plate is composed of two gas uniform plates, a gas outlet is provided between the two gas uniform plates, and a gas outlet is provided between the two gas uniform plates and the metal shell;

第二层匀气板由一个匀气板构成,该匀气板与所述金属外壳之间均设置有气体出口;The second layer of gas uniform plate is composed of a gas uniform plate, and gas outlets are arranged between the gas uniform plate and the metal shell;

第三层匀气板由两个所述匀气板构成,该两个匀气板分别与所述金属外壳连接,该两个匀气板之间设置有用于气体收缩气流的出口。The third layer of gas-distributing plates is composed of two said gas-distributing plates, and the two gas-distributing plates are respectively connected with the said metal shell, and an outlet for gas contraction flow is arranged between the two gas-distributing plates.

进一步地,在第三层匀气板设置的所述用于气体收缩气流的出口面积小于两个射频电极之间的面积。Further, the area of the outlet for gas contraction airflow provided on the third layer of gas uniform plate is smaller than the area between the two radio frequency electrodes.

进一步地,两个所述射频电极均是呈半圆形金属条,在装置放电时,等离子体仅沿着半圆形弧面转移。Further, the two radio frequency electrodes are semicircular metal strips, and when the device is discharged, the plasma is only transferred along the semicircular arc surface.

进一步地,所述金属壳体表面设置有带孔的绝缘块,所述射频电源通过所述绝缘块与所述射频电极的连接。Further, an insulating block with holes is provided on the surface of the metal shell, and the radio frequency power supply is connected to the radio frequency electrode through the insulating block.

本实用新型提供的等离子体放电装置,两个射频电极均为半圆形金属条,装置工作时,等离子体仅沿着弧面转移,避免了散射性放电,提高了放电效率,装置的收缩状气流出口提高了气流速率,等离子体在气流的携带下喷向被处理材料,与被处理材料表面的有机物发生反应,生成二氧化碳和水,可以直接排放到大气中。常压介质阻挡等离子体放电装置用于清洗硅片表面光刻胶、清洗或活化液晶玻璃平板、清洗或改善PCB板或其他有机材料表面的亲水性或疏水性。本实用新型的金属射频电极被介质阻挡层包覆,金属外壳与射频电极之间也被介质阻挡层隔离,能克服现有技术中易引入金属杂质这一缺点。由于采用板圆形金属条的射频电极,使得放电产生的等离子体沿着弧面转移,避免了散射性放电,提高了放电效率,采用收缩状匀气板,可有效提高气流速率,增大等离子体喷出喷口的长度,降低了装置对被处理材料的形状等要求。In the plasma discharge device provided by the utility model, the two radio frequency electrodes are semicircular metal strips. When the device is in operation, the plasma is only transferred along the arc surface, which avoids scattered discharge, improves the discharge efficiency, and the shrinkage of the device The airflow outlet increases the airflow rate, and the plasma is sprayed to the material to be processed under the airflow, and reacts with the organic matter on the surface of the material to be processed to generate carbon dioxide and water, which can be directly discharged into the atmosphere. The atmospheric pressure dielectric barrier plasma discharge device is used to clean the photoresist on the surface of the silicon wafer, clean or activate the liquid crystal glass plate, clean or improve the hydrophilicity or hydrophobicity of the surface of the PCB board or other organic materials. The metal radio-frequency electrode of the utility model is covered by a dielectric barrier layer, and the metal shell and the radio-frequency electrode are also separated by the dielectric barrier layer, which can overcome the disadvantage of easy introduction of metal impurities in the prior art. Due to the use of the radio frequency electrode of the plate circular metal strip, the plasma generated by the discharge is transferred along the arc surface, which avoids the scattered discharge and improves the discharge efficiency. The length of the body ejection nozzle reduces the requirements of the device on the shape of the material to be processed.

附图说明Description of drawings

图1为本实用新型实施例提供的等离子体放电装置原理示意图。Fig. 1 is a schematic diagram of the principle of the plasma discharge device provided by the embodiment of the present invention.

图2为本实用新型实施例提供的等离子体放电装置外形图。Fig. 2 is an outline view of the plasma discharge device provided by the embodiment of the present invention.

具体实施方式Detailed ways

参见图1,本实用新型实施例提供的等离子体放电装置,包括两个半圆形射频电极107、包覆在射频电极外面的介质阻挡层106、作为接地电极的金属外壳104、射频电极与金属壳体之间的介质阻挡层112、装置内部的三层匀气板105、一个射频电源111、气源101、流量计102以及供气管路103。两个射频电极107均呈半圆形金属条,装置放电时,等离子体仅沿着弧面转移,提高了放电效率,扩大了等离子体与硅片等被处理材料表面的接触面积。Referring to Fig. 1, the plasma discharge device provided by the embodiment of the present invention includes two semicircular radio frequency electrodes 107, a dielectric barrier layer 106 coated outside the radio frequency electrodes, a metal shell 104 as a ground electrode, a radio frequency electrode and a metal Dielectric barrier layer 112 between shells, three-layer gas uniform plate 105 inside the device, a radio frequency power supply 111 , gas source 101 , flow meter 102 and gas supply pipeline 103 . The two radio frequency electrodes 107 are in the form of semicircular metal strips. When the device discharges, the plasma only transfers along the arc surface, which improves the discharge efficiency and expands the contact area between the plasma and the surface of the material to be processed such as a silicon wafer.

在三层匀气板105中,第一层匀气板由两个匀气板构成,该两个匀气板之间设置有气体出口,该两个该匀气板与所述金属外壳之间均设置有气体出口。第二层匀气板由一个匀气板构成,该匀气板与所述金属外壳之间均设置有气体出口;第三层匀气板由两个所述匀气板构成,该两个匀气板分别与所述金属外壳连接,该两个匀气板之间设置有用于气体收缩气流的出口,该出口类似倒“八”字型。In the three-layer gas distribution board 105, the first gas distribution board is composed of two gas distribution boards, and a gas outlet is arranged between the two gas distribution boards, and a gas outlet is arranged between the two gas distribution boards and the metal shell. All are equipped with gas outlets. The second layer of gas uniform plate is composed of one gas uniform plate, and gas outlets are evenly arranged between the gas uniform plate and the metal shell; the third layer of gas uniform plate is composed of two said gas uniform plates, and the two gas uniform plates are The gas plates are respectively connected to the metal shells, and an outlet for contracting gas flow is arranged between the two gas uniform plates, and the outlet is similar to an inverted "eight" shape.

介质阻挡层106为石英或陶瓷等绝缘材料。气源101提供氦气、氩气、氧气、氮气、四氟化碳等气体或几种气体按一定比例混合的气体。气体经过流量计102后进入供气管路103,气体经过两层匀气板后,分布较为均匀,再经过第三层匀气板收缩加速,进入两个射频电极107之间的喷口。在常压下,当射频电极107与射频电源111接通后,电源接通后,在喷口处形成大面积的辉光等离子体110,等离子体110沿着电极弧面转移,并在气流的带动下,喷射出来。当到达载物台109上的被处理材料108表面时,与被处理材料表面的光刻胶或其它有机物反应,生成二氧化碳、水等产物,除了去除衬底表面光刻胶或其它有机物外,该装置还可以对液晶玻璃平板、PCB板等表面进行清洗或改性。The dielectric barrier layer 106 is an insulating material such as quartz or ceramics. The gas source 101 provides gases such as helium, argon, oxygen, nitrogen, carbon tetrafluoride or a mixture of several gases in a certain proportion. The gas enters the gas supply pipeline 103 after passing through the flow meter 102 , and the gas is evenly distributed after passing through two layers of gas uniform plates, and then passes through the third layer of gas uniform plates to shrink and accelerate, and then enters the nozzle between the two RF electrodes 107 . Under normal pressure, when the RF electrode 107 is connected to the RF power supply 111, after the power supply is connected, a large area of glow plasma 110 is formed at the nozzle, and the plasma 110 transfers along the arc surface of the electrode, and is driven by the airflow. Down, squirt out. When reaching the surface of the processed material 108 on the stage 109, it reacts with the photoresist or other organic matter on the surface of the processed material to generate products such as carbon dioxide and water. In addition to removing the photoresist or other organic matter on the substrate surface, this The device can also clean or modify the surfaces of liquid crystal glass plates and PCB boards.

参见图2,该常压介质阻挡等离子体放电装置,供气管路103与装置的进气口201连接,射频电极107两端与金属壳体104之间通过介质阻挡层112隔离,金属壳体表面有带孔的绝缘块203,射频电源与射频电极的连接,通过绝缘块203与金属外壳104隔离。Referring to Fig. 2, in this atmospheric pressure dielectric barrier plasma discharge device, the gas supply pipeline 103 is connected to the air inlet 201 of the device, and the two ends of the radio frequency electrode 107 are isolated from the metal shell 104 by a dielectric barrier layer 112, and the surface of the metal shell is There is an insulating block 203 with holes, and the connection of the radio frequency power supply and the radio frequency electrode is isolated from the metal shell 104 through the insulating block 203 .

本实用新型实施例提供的一种常压介质阻挡等离子体放电装置,装置的两个射频电极均为半圆形金属条,装置工作时,等离子体仅沿着弧面转移,避免了散射性放电,提高了放电效率,装置的收缩状气流出口提高了气流速率,等离子体在气流的携带下喷向被处理材料,与被处理材料表面的有机物发生反应,生成二氧化碳和水,该装置用于清洗硅片表面光刻胶、玻璃表面有机物、金属或有机材料表面活化。由于射频电极采用了半圆形金属条,装置放电时,等离子体仅沿着弧面转移,提高了放电效率,扩大了等离子体与硅片等被处理材料表面的接触面积。An atmospheric dielectric barrier plasma discharge device provided by the embodiment of the utility model, the two radio frequency electrodes of the device are semicircular metal strips, when the device is working, the plasma is only transferred along the arc surface, avoiding the scattering discharge , improve the discharge efficiency, the contracted airflow outlet of the device increases the airflow rate, the plasma is sprayed to the material to be processed under the airflow, and reacts with the organic matter on the surface of the material to be processed to generate carbon dioxide and water. The device is used for cleaning Silicon wafer surface photoresist, glass surface organic matter, metal or organic material surface activation. Since the radio frequency electrode uses a semi-circular metal strip, when the device discharges, the plasma is only transferred along the arc surface, which improves the discharge efficiency and expands the contact area between the plasma and the surface of the processed material such as silicon wafers.

最后所应说明的是,以上具体实施方式仅用以说明本实用新型的技术方案而非限制,尽管参照实例对本实用新型进行了详细说明,本领域的普通技术人员应当理解,可以对本实用新型的技术方案进行修改或者等同替换,而不脱离本实用新型技术方案的精神和范围,其均应涵盖在本实用新型的权利要求范围当中。Finally, it should be noted that the above specific embodiments are only used to illustrate the technical solutions of the present utility model without limitation. Although the utility model has been described in detail with reference to examples, those of ordinary skill in the art should understand that the utility model can be Modifications or equivalent replacements of the technical solutions without departing from the spirit and scope of the technical solutions of the utility model shall be covered by the claims of the utility model.

Claims (6)

1. a plasma discharge apparatus, is characterized in that: comprise two radio frequency electrodes, dielectric barrier, uniform gas board, source of the gas, radio-frequency power supply and metal shells; Described radio-frequency power supply is connected with described radio frequency electrode;
Electric discharge device is in when work, described metal shell ground connection;
Described radio frequency electrode is coated by dielectric barrier;
Be the plasma spout between two radio frequency electrodes;
Described uniform gas board is positioned at above described dielectric barrier;
The contraction mouth of the working gas that described source of the gas provides by being consisted of by described uniform gas board, arrive described plasma spout, and under normal pressure, after power connection, form large-area glow plasma at described nozzle, plasma is outside ejection under the carrying of air-flow.
2. plasma discharge apparatus according to claim 1 is characterized in that:
Described uniform gas board is divided into three layers, and wherein, one deck uniform gas board of close described radio frequency electrode is provided with for the outlet of shrinking air-flow, makes working gas by described the 3rd rear spout that arrives between radio frequency electrode of outlet.
3. plasma discharge apparatus according to claim 2 is characterized in that:
The ground floor uniform gas board is made of two uniform gas boards, is provided with gas vent between these two uniform gas boards, is provided with gas vent between these two these uniform gas boards and described metal shell;
Second layer uniform gas board is made of a uniform gas board, is provided with gas vent between this uniform gas board and described metal shell;
The 3rd layer of uniform gas board is made of two described uniform gas boards, and these two uniform gas boards are connected with described metal shell respectively, is provided with the outlet for the contraction of gas air-flow between these two uniform gas boards.
4. plasma discharge apparatus according to claim 3 is characterized in that:
The described discharge area for the contraction of gas air-flow that arranges at the 3rd layer of uniform gas board is less than the area between two radio frequency electrodes.
5. plasma discharge apparatus described according to right 1 is characterized in that:
Two described radio frequency electrodes are all semicircular in shape bonding jumpers, and when the device discharge, plasma only shifts along semicircle cambered surface.
6. plasma discharge apparatus according to claim 1 is characterized in that:
Described metal shell surface is provided with collets with holes, and described radio-frequency power supply is connected by described collets and described radio frequency electrode.
CN 201220720322 2012-12-24 2012-12-24 Plasma discharge device Expired - Lifetime CN202979452U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220720322 CN202979452U (en) 2012-12-24 2012-12-24 Plasma discharge device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220720322 CN202979452U (en) 2012-12-24 2012-12-24 Plasma discharge device

Publications (1)

Publication Number Publication Date
CN202979452U true CN202979452U (en) 2013-06-05

Family

ID=48520466

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220720322 Expired - Lifetime CN202979452U (en) 2012-12-24 2012-12-24 Plasma discharge device

Country Status (1)

Country Link
CN (1) CN202979452U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103889138A (en) * 2012-12-24 2014-06-25 中国科学院微电子研究所 Plasma discharge device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103889138A (en) * 2012-12-24 2014-06-25 中国科学院微电子研究所 Plasma discharge device
WO2014100962A1 (en) * 2012-12-24 2014-07-03 中国科学院微电子研究所 Plasma discharge device
CN103889138B (en) * 2012-12-24 2016-06-29 中国科学院微电子研究所 Plasma discharge device

Similar Documents

Publication Publication Date Title
CN103889138B (en) Plasma discharge device
CN102310063A (en) Honeycomb Plasma Radical Cleaning System
SG164361A1 (en) Apparatus and methods for cleaning and drying of wafers
CN102085521A (en) Atmospheric pressure medium barrier active radical cleaning system
CN102085520A (en) Atmospheric pressure double medium barrier flat mouth type active radical cleaning system
CN102896113A (en) Novel double-dielectric-barrier normal-pressure plasma free radical cleaning spray gun
CN102891071A (en) Novel normal pressure plasma free radical cleaning spray gun
CN102921676A (en) Novel normal pressure plasma free radical cleaning spray gun with exhaust function
CN202979452U (en) Plasma discharge device
TW201409526A (en) The plasma processing device
CN202207679U (en) A honeycomb atmospheric pressure plasma free radical cleaning equipment
CN106191990B (en) A kind of inlet duct of boiler tube
KR20150015827A (en) Multi-functional apparatus for cleaning workpiece
KR101341452B1 (en) A supersonic waves lease the regular plasma head dry plasma Ashing
CN203030580U (en) Normal-pressure plasma free radical cleaning equipment
KR101314162B1 (en) Multi-functional apparatus and method for cleaning workpiece
CN102820204A (en) Radio frequency and dielectric barrier normal pressure glow plasma scanning photoresist removing system
CN202591170U (en) Plasma free radical cleaning spray gun with normal-pressure double radio-frequency electrodes
TWI735697B (en) Manufacturing method of glass substrate
CN102333410B (en) An Atmospheric Pressure Cooled Plasma Jet Apparatus for Etching Photoresist Materials
CN102931050B (en) Novel air inlet mode of atmospheric pressure plasma free radical cleaning spray gun
CN101081395A (en) Method for Cleaning Surface Contaminants of Substrates with Composite Type
KR101528888B1 (en) LCD panel surface cleaning apparatus using dryice
WO2013149482A1 (en) New normal-pressure dual radio frequency electrode plasma free radical cleaning spray gun
CN107240561A (en) Etching spraying module and wet etching device using the same

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200415

Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, building 15, room 328

Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd.

Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3

Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200508

Address after: 610299 in Chengdu core Valley Industrial Park, Dongsheng Street, Shuangliu District, Chengdu City, Sichuan Province

Patentee after: China core Microelectronics Technology Chengdu Co.,Ltd.

Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, building 15, room 328

Patentee before: Beijing Zhongke micro Investment Management Co.,Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20130605