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CN203030580U - Normal-pressure plasma free radical cleaning equipment - Google Patents

Normal-pressure plasma free radical cleaning equipment Download PDF

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Publication number
CN203030580U
CN203030580U CN201220139246.3U CN201220139246U CN203030580U CN 203030580 U CN203030580 U CN 203030580U CN 201220139246 U CN201220139246 U CN 201220139246U CN 203030580 U CN203030580 U CN 203030580U
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China
Prior art keywords
plasma generator
plasma
free radical
silicon chip
intermediate frequency
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Expired - Fee Related
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CN201220139246.3U
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Chinese (zh)
Inventor
贾少霞
王守国
杨景华
赵玲利
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

一种常压等离子体自由基清洗设备,包括一台中频等离子体发生器、一台射频等离子体发生器、吸片装置、电源系统、移动机械臂、进气系统以及抽气泵。设备运行时,两台等离子体发生器同时工作,工作气体在流量计的控制下进入到两台等离子体发生器中,吸片装置固定在一维移动机械臂上,电源接通过后,等离子体发生器产生的自由基在气流的携带下喷射出来,吸片装置吸附着硅片,在机械臂的带动下,先从中频高压等离子体发生器喷口上方扫过,进行预清洗,然后再从射频等离子体发生器上方扫过,进行精细清洗,本实用新型可用于硅片光刻胶和有机污染物清洗或其他衬底表面的有机污染物的清洗。

Figure 201220139246

An atmospheric pressure plasma free radical cleaning device includes a medium frequency plasma generator, a radio frequency plasma generator, a suction device, a power supply system, a mobile mechanical arm, an air intake system and an air suction pump. When the equipment is running, the two plasma generators work at the same time, and the working gas enters the two plasma generators under the control of the flowmeter. The suction device is fixed on the one-dimensional mobile mechanical arm. After the power is connected, the plasma The free radicals generated by the generator are ejected under the airflow, and the chip suction device absorbs the silicon chip. Driven by the mechanical arm, it first sweeps over the nozzle of the medium-frequency high-pressure plasma generator for pre-cleaning, and then from the radio frequency Sweep over the plasma generator to perform fine cleaning. The utility model can be used for cleaning silicon wafer photoresists and organic pollutants or cleaning organic pollutants on the surface of other substrates.

Figure 201220139246

Description

A kind of atmospheric plasma free radical cleaning equipment
Technical field
The utility model relates to a kind of atmospheric plasma free radical cleaning equipment, this equipment comprises an intermediate frequency plasma generator and a RF plasma generator, feed working gas, after connecting power supply, these two plasma generators different free radical line of produce power that makes progress is used for the organic pollution on the photoresist on the silicon chip and organic pollutant or other substrates is cleaned.
Background technology
Silicon chip photoresist cleaning treatment is improper may to make whole silicon chips scrap, or the device performance that produces is inferior, stability and poor reliability, the large scale integrated circuit development rapidly, live width constantly reduces, more and more higher to the requirement that the not damaged of silicon chip cleans, people have recognized gradually that wet-cleaning can not accurately control, clean not thorough, easily introduce new impurity, shortcomings such as waste liquor contamination environment, the method that normal pressure dry method cleaning silicon chip photoresist now occurred, wherein a kind of method is to adopt the free radical cleaning photoetching glue, present this method all is to have adopted single power supply and single plasma generator, exists the speed of removing photoresist slower, easily device is produced damage, or clean problems such as not thorough.
The utility model atmospheric plasma free radical cleaning equipment has adopted the free radical line of two kinds of different-energies, can remove efficiently because high energy particle injects the duricrust that produces, earlier by high-octane free radical line photoresist is carried out prerinse, can wash most photoresist, and then by more low-energy free radical line photoresist be carried out the secondary fine processing.Compare with the conventional dry cleaning equipment that removes photoresist, the utility model has adopted high-energy and low-energy free radical line simultaneously, has both improved cleaning efficiency, has also reduced the damage that the radical pair silicon chip surface causes in the cleaning process to greatest extent.
The utility model content
A kind of atmospheric plasma free radical of the utility model cleaning equipment, comprise an intermediate frequency plasma generator, a RF plasma generator, inhale the sheet device, power-supply system, mobile mechanical arm, gas handling system and aspiration pump, it is characterized in that: equipment adopts an intermediate frequency plasma generator and a RF plasma generator as plasma source simultaneously, working gas enters into two plasma generators respectively under the control of flowmeter, inhaling the sheet device is fixed on the one dimension mobile mechanical arm, after the power connection, two plasma generators upwards spray the free radical line, inhale the sheet device and adsorbing silicon chip, under the drive of mechanical arm, inswept from the top of plasma generator spout, carry out the silicon chip cleaning of removing photoresist, the distance of silicon chip and two plasma generator spouts is 0.5~2.5mm.
Described atmospheric plasma free radical cleaning equipment, it is characterized in that: the intermediate frequency plasma generator comprises a high-field electrode and two ground electrodes, high-field electrode is coated by quartz, higher from the free radical energy of intermediate frequency plasma generator spout ejection, be used for carrying out the prerinse of silicon chip photoresist, RF plasma generator comprises a radio-frequency electrode and two ground electrodes, radio-frequency electrode is coated by quartz, relatively low from the free radical energy of RF plasma generator spout ejection, be used for carrying out the meticulous cleaning of silicon chip photoresist.
Described atmospheric plasma free radical cleaning equipment, it is characterized in that: power-supply system comprises intermediate frequency power supply and radio-frequency power supply that frequency is 13.56MHz that a frequency range is 15-40kHz, intermediate frequency power supply is connected with the intermediate frequency plasma generator, and radio-frequency power supply is connected with RF plasma generator.
Described atmospheric plasma free radical cleaning equipment, it is characterized in that: inhale the function that the sheet device has the absorption silicon chip, the function that also has the heating silicon chip simultaneously, can be with silicon temperature control at 150-250 ℃, inhale the sheet device under the drive of one dimension mechanical arm, successively by intermediate frequency plasma generator region of discharge and RF plasma generator region of discharge.
The advantage of the utility model atmospheric plasma free radical cleaning equipment is: 1, this cleaning equipment has adopted electrion and two kinds of discharge types of radio frequency discharge, equipment has effectively shielded two kinds of interference between the forms discharge, and these the two kinds equal steady operations of discharge are under normal pressure; When 2, equipment is worked, silicon chip carries out preliminary treatment by the high-energy free radical line that the intermediate frequency plasma generator produces earlier, significantly reduce the thickness of photoresist, the lower free radical line of energy that is produced by RF plasma generator carries out fine processing again, improve the speed that dry method is removed photoresist and cleaned, also reduced the damage of radical pair silicon chip surface to greatest extent.3, intermediate frequency discharge and radio frequency discharge all under atmospheric pressure realize, do not need to vacuumize, and have reduced the technology cost.
Main application of the present utility model is in integrated circuit fabrication process, the photoresist on the cleaning silicon chip and organic pollution, or the cleaning of the organic pollution of other substrate surfaces.
Description of drawings
Fig. 1 the utility model atmospheric plasma free radical cleaning equipment structural representation.
The specific embodiment
See also Fig. 1, the utility model atmospheric plasma free radical cleaning equipment structural representation comprises intermediate frequency plasma generator 107 and RF plasma generator 104, inhales sheet device 110, intermediate frequency power supply 106, radio-frequency power supply 103, mobile mechanical arm 111, gas handling system 101 and extract system 112.Working gas enters air inlet pipeline 102 by gas handling system 101, pass through by-pass valve control, enter intermediate frequency plasma generator 107 and RF plasma generator 104 respectively, behind the power connection, the free radical line 108 that intermediate frequency plasma generator produce power is higher, the free radical line 105 that the RF plasma generator produce power is lower, extract system 112 with inhale sheet device 110 and be connected by wireway, inhale the surface that deposits on chip when bleeding and form negative pressure, thereby silicon chip or other substrates 109 are adsorbed onto on the sheet device, inhale the sheet device under the drive of mobile mechanical arm 111, pass through the top of intermediate frequency plasma generator and RF plasma generator successively, when above the intermediate frequency plasma generator, because the free radical beam energy that the intermediate frequency plasma generator produces is higher, the speed of removing photoresist is fast, for fear of plasma silicon chip or substrate surface are caused damage, the rate travel of mobile mechanical arm is very fast, only silicon chip or substrate surface are carried out prerinse, get rid of most of photoresist or organic pollution, when arriving the top of RF plasma generator, because the free radical beam energy that RF plasma generator produces is lower, the translational speed of mechanical arm needs suitably to reduce, to clean remaining photoresist or organic pollution.
In the utility model, the product that the free radical that the higher free radical of energy and energy are lower and photoresist and organic pollution reaction generate is water and carbon dioxide, can not pollute environment, can directly be discharged in the atmosphere.Can come the cleaning rate of control appliance by control power, working gas flow and mechanical arm rate travel.
In conjunction with specific embodiments the utility model is described with reference to the accompanying drawings above, yet, need to prove, for a person skilled in the art, under the situation that does not break away from spirit and scope of the present utility model, can make many changes and modification to above-described embodiment, these changes and modification all drop in the claim restricted portion of the present utility model.

Claims (4)

1. atmospheric plasma free radical cleaning equipment, comprise an intermediate frequency plasma generator, a RF plasma generator, inhale the sheet device, power-supply system, mobile mechanical arm, gas handling system and aspiration pump, it is characterized in that: equipment adopts an intermediate frequency plasma generator and a RF plasma generator as plasma source simultaneously, working gas enters into two plasma generators respectively under the control of flowmeter, inhaling the sheet device is fixed on the one dimension mobile mechanical arm, after the power connection, two plasma generators upwards spray the free radical line, inhale the sheet device and adsorbing silicon chip, under the drive of mechanical arm, inswept from the top of plasma generator spout, carry out the silicon chip cleaning of removing photoresist, the distance of silicon chip and two plasma generator spouts is 0.5~2.5mm.
2. atmospheric plasma free radical cleaning equipment as claimed in claim 1, it is characterized in that: the intermediate frequency plasma generator comprises a high-field electrode and two ground electrodes, high-field electrode is coated by quartzy or pottery, higher from the free radical energy of intermediate frequency plasma generator spout ejection, be used for carrying out the prerinse of silicon chip photoresist, RF plasma generator comprises a radio-frequency electrode and two ground electrodes, radio-frequency electrode is coated by quartzy or pottery, relatively low from the free radical energy of RF plasma generator spout ejection, be used for carrying out the meticulous cleaning of silicon chip photoresist.
3. atmospheric plasma free radical cleaning equipment as claimed in claim 1, it is characterized in that: power-supply system comprises intermediate frequency power supply and radio-frequency power supply that frequency is 13.56MHz that a frequency range is 15-40kHz, intermediate frequency power supply is connected with the intermediate frequency plasma generator, and radio-frequency power supply is connected with RF plasma generator.
4. atmospheric plasma free radical cleaning equipment as claimed in claim 1, it is characterized in that: inhale the function that the sheet device has the absorption silicon chip, the function that also has the heating silicon chip simultaneously, can be with silicon temperature control at 150-250 ℃, inhale the sheet device under the drive of one dimension mechanical arm, successively by intermediate frequency plasma generator region of discharge and RF plasma generator region of discharge.
CN201220139246.3U 2012-04-05 2012-04-05 Normal-pressure plasma free radical cleaning equipment Expired - Fee Related CN203030580U (en)

Priority Applications (1)

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CN201220139246.3U CN203030580U (en) 2012-04-05 2012-04-05 Normal-pressure plasma free radical cleaning equipment

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Application Number Priority Date Filing Date Title
CN201220139246.3U CN203030580U (en) 2012-04-05 2012-04-05 Normal-pressure plasma free radical cleaning equipment

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CN203030580U true CN203030580U (en) 2013-07-03

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103586235A (en) * 2013-11-19 2014-02-19 张家港市超声电气有限公司 Suction cup conveying belt type slice cleaning device
CN110783222A (en) * 2018-07-30 2020-02-11 三星电子株式会社 Cleaning solution manufacturing system and method and plasma reaction tank
CN111916390A (en) * 2019-05-08 2020-11-10 三星电子株式会社 Robot hand, wafer transfer robot, and wafer transfer apparatus
CN113458086A (en) * 2021-06-03 2021-10-01 广东工业大学 Cleaning device and cleaning method for rocket engine parts

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103586235A (en) * 2013-11-19 2014-02-19 张家港市超声电气有限公司 Suction cup conveying belt type slice cleaning device
CN110783222A (en) * 2018-07-30 2020-02-11 三星电子株式会社 Cleaning solution manufacturing system and method and plasma reaction tank
CN111916390A (en) * 2019-05-08 2020-11-10 三星电子株式会社 Robot hand, wafer transfer robot, and wafer transfer apparatus
CN113458086A (en) * 2021-06-03 2021-10-01 广东工业大学 Cleaning device and cleaning method for rocket engine parts

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C17 Cessation of patent right
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Granted publication date: 20130703

Termination date: 20140405