CN201825868U - Silver-containing low emissivity glass - Google Patents
Silver-containing low emissivity glass Download PDFInfo
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- CN201825868U CN201825868U CN2010205031022U CN201020503102U CN201825868U CN 201825868 U CN201825868 U CN 201825868U CN 2010205031022 U CN2010205031022 U CN 2010205031022U CN 201020503102 U CN201020503102 U CN 201020503102U CN 201825868 U CN201825868 U CN 201825868U
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Abstract
本实用新型公开了一种含银低辐射玻璃，膜层结构依次为：玻璃基片、基层电介质组合层、第一银层、第一阻挡层、第一隔层电介质组合层、第二银层、第二阻挡层、第二隔层电介质组合层、第三银层、第三阻挡层、第三隔层电介质组合层、第四银层、第四阻挡层、上层电介质组合层。该含银低辐射玻璃辐射低、可见光透过率高、外观不呈现干扰色、选择系数高，具有良好的节能效果；独特的膜层结构，使得产品具有良好的耐候性，同时膜层不易脱落、不易被氧化，能推广到汽车玻璃和民用住宅。
The utility model discloses a silver-containing low-radiation glass. The film layer structure is as follows: a glass substrate, a base dielectric composite layer, a first silver layer, a first barrier layer, a first interlayer dielectric composite layer, and a second silver layer. , the second barrier layer, the second interlayer dielectric combination layer, the third silver layer, the third barrier layer, the third interlayer dielectric combination layer, the fourth silver layer, the fourth barrier layer, and the upper dielectric combination layer. The silver-containing low-emissivity glass has low radiation, high visible light transmittance, no interference color appearance, high selectivity coefficient, and good energy-saving effect; the unique film structure makes the product have good weather resistance, and the film layer is not easy to fall off , It is not easy to be oxidized, and can be extended to automobile glass and residential buildings.
Description
[technical field]
The utility model relates to the special glass field, relates in particular to a kind of argentiferous low emissivity glass.
[background technology]
Low emissivity glass is a kind of at glass surface deposition one deck infrared reflection material, visible light in the sunlight can be seen through, again as the infrared reflection mirror, the special glass that the infrared rays in the sunlight is foreclosed and simultaneously object secondary rays heat reflection gone back.By using low emissivity glass, can reach the effect of controlling sunlight, save energy, heat regulating and controlling and improving environment.
In traditional low emissivity glass course of processing, in order to realize U value and selection coefficient Lsg preferably, just must increase the radiant ratio that silver thickness in the rete reduces the glass rete, select coefficient to obtain ideal, just mean that visible light transmissivity reduces, appearance color presents interference color but increase silver thickness, influence the use of glass.
[utility model content]
Based on this, be necessary to provide a kind of visible light transmissivity height, outward appearance not to present the argentiferous low emissivity glass of interference color.
A kind of argentiferous low emissivity glass, film layer structure is followed successively by: glass substrate, basic unit's dielectric combination layer, first silver layer, first blocking layer, the first interlayer dielectric combination layer, second silver layer, second blocking layer, the second interlayer dielectric combination layer, the 3rd silver layer, the 3rd blocking layer, the 3rd interlayer dielectric combination layer, the 4th silver layer, the 4th blocking layer, upper strata dielectric combination layer.
Preferably, described basic unit dielectric combination layer thickness is 25～27nm.
Preferably, described first blocking layer, second blocking layer, the 3rd blocking layer, the 4th barrier layer thickness are 0.25～0.3nm.
Preferably, the described first interlayer dielectric combination layer thickness is 67～69nm; The described second interlayer dielectric combination layer thickness is 69～71nm; Described the 3rd interlayer dielectric combination layer thickness is 71～73nm.
Preferably, described upper strata dielectric combination layer thickness is 24～27nm.
Preferably, described first silver layer, second silver layer, the 3rd silver layer, the 4th silver layer satisfy on thickness: first silver thickness less than second silver layer, second silver thickness less than the 3rd silver layer, the 3rd silver thickness less than the 4th silver layer.
Preferred, described first silver thickness is 7～8nm; Second silver thickness is 11～12nm; The 3rd silver thickness is 12～13nm; The 4th silver thickness is 13～14nm.
Preferably, described upper strata dielectric combination layer comprises the first upper strata dielectric combination layer that is deposited on described the 4th blocking layer and is deposited on the second upper strata dielectric combination layer on the described first upper strata dielectric combination layer.
Preferably, the thickness of the described first upper strata dielectric combination layer is 15～16nm.
Preferably, the thickness of the described second upper strata dielectric combination layer is 9～11nm.
This argentiferous low emissivity glass traditional be to increase silver layer, blocking layer and dielectric layer combination layer in the low emissivity glass of infrared external reflection rete with silver, make silver thickness disperse and block like this by the carrying of dielectric layer combination layer, visible light transmissivity height when increasing silver thickness, and outward appearance does not present interference color.
[description of drawings]
Fig. 1 is an embodiment argentiferous low emissivity glass structural representation;
Fig. 2 is the manufacturing flow chart of an embodiment argentiferous low emissivity glass.
[embodiment]
A kind of argentiferous low emissivity glass as shown in Figure 1 comprises the following structure that is arranged in order: glass substrate, basic unit's dielectric combination layer, first silver layer, first blocking layer, the first interlayer dielectric combination layer, second silver layer, second blocking layer, the second interlayer dielectric combination layer, the 3rd silver layer, the 3rd blocking layer, the 3rd interlayer dielectric combination layer, the 4th silver layer, the 4th blocking layer, upper strata dielectric combination layer.
Preferably, basic unit's dielectric combination layer, the first interlayer dielectric combination layer, the second interlayer dielectric combination layer, the 3rd interlayer dielectric combination layer, upper strata dielectric combination layer are by TiO
2, ZnSnO
x, SnO
2, ZnO, SiO
2, Ta
2O
5, BiO
2, Al
2O
3, ZnAl
2O
4, Nb
2O
5And Si
3N
4In one or more formations; First blocking layer, second blocking layer, the 3rd blocking layer, the 4th blocking layer are by Ni, Cr, NiCrO
xAnd NiCrN
xIn one or more formations.
Preferably, basic unit's dielectric combination layer thickness is 25～27nm; First blocking layer, second blocking layer, the 3rd blocking layer, the 4th barrier layer thickness are 0.25～0.3nm; The first interlayer dielectric combination layer thickness is 67～69nm; The second interlayer dielectric combination layer thickness is 69～71nm; The 3rd interlayer dielectric combination layer thickness is 71～73nm; Upper strata dielectric combination layer thickness is 24～27nm.
Preferably, require on four silver thickness first silver thickness less than second silver layer, second silver thickness less than the 3rd silver layer, the 3rd silver thickness less than the 4th silver layer.Four layers of silver thickness summation are about between 43nm～47nm, and its each silver thickness relation satisfies the color value scope in product appearance color such as the following table:
| The monolithic appearance color | The glass surface reflected colour | Rete face reflected colour | Transmitted colour |
| Y? | Less than 7 | Less than 8 | Greater than 70 |
| L * | Less than 32 | Less than 34 | Greater than 87 |
| a * | -0.5～-1.8? | 1.2～1.8? | -6.0～-5.0? |
| b * | -3.5～-4.5? | -4.5～-5.5? | -1.0～2.0? |
Preferred, first silver thickness is 7～8nm; Second silver thickness is 11～12nm; The 3rd silver thickness is 12～13nm; The 4th silver thickness is 13～14nm.
Preferably, the upper strata dielectric combination layer comprises first upper strata dielectric combination layer that is deposited on the 4th blocking layer and the second upper strata dielectric combination layer that is deposited on the first upper strata dielectric combination layer; The first upper strata dielectric combination layer is by TiO
2, ZnSnO
x, SnO
2, ZnO, SiO
2, Ta
2O
5, BiO
2, Al
2O
3, ZnAl
2O
4, Nb
2O
5And Si
3N
4In one or more formations; The second upper strata dielectric combination layer is by TiO
2, SnO
2, ZnO, SiO
2, Ta
2O
5, BiO
2, Al
2O
3, ZnAl
2O
4, Nb
2O
5And Si
3N
4In one or more formations; The thickness of the first upper strata dielectric combination layer is 15～16nm; The thickness of the second upper strata dielectric combination layer is 9～11nm.
Preferred, first, second upper strata dielectric combination layer is formed with the stack of differing materials alternating sputtering usually, is convenient to control membrane uniformity, stability and reasonable optical effect.
Particularly preferred, the second upper strata dielectric combination layer outermost material comprises TiO at least
2, SiO
2And Si
3N
4In a kind of, make the wear-resisting and weather resistance of product finally meet the physicochemical property standard.
The first upper strata dielectric combination layer thickness is about 1.5 times of the second upper strata dielectric combination layer thickness, makes product can obtain relative better heat-resisting, durable and optics thermal characteristics.
The manufacture method of above-mentioned argentiferous low emissivity glass as shown in Figure 2 comprises the step that deposits each rete successively, and is specific as follows:
Clean glass substrate, drying is placed on magnetron sputtering area;
The intermediate frequency power supply utmost point sputtering sedimentation basic unit dielectric combination layer of turning out cloudy of putting english;
Direct supply adds pulse sputtering sedimentation first silver layer;
Direct supply adds pulse sputtering sedimentation first blocking layer;
The intermediate frequency power supply utmost point sputtering sedimentation first interlayer dielectric combination layer of turning out cloudy of putting english;
Direct supply adds pulse sputtering sedimentation second silver layer;
Direct supply adds pulse sputtering sedimentation second blocking layer;
The intermediate frequency power supply utmost point sputtering sedimentation second interlayer dielectric combination layer of turning out cloudy of putting english;
Direct supply adds pulse sputtering sedimentation the 3rd silver layer;
Direct supply adds pulse sputtering sedimentation the 3rd blocking layer;
Intermediate frequency power supply utmost point sputtering sedimentation the 3rd interlayer dielectric combination layer of turning out cloudy of putting english;
Direct supply adds pulse sputtering sedimentation the 4th silver layer;
Direct supply adds pulse sputtering sedimentation the 4th blocking layer;
The intermediate frequency power supply utmost point sputtering sedimentation upper strata dielectric combination layer of turning out cloudy of putting english;
Inspection after construction.
Preferably, during deposition plating, the configuration of plated film line keeps system background vacuum vacuum tightness 3 * 10
-6The no oil molecule pump that mbar is above; The contiguous compartment position of silver target disposes the cryopump that is used to absorb moisture; The put english utmost point sputter of turning out cloudy of intermediate frequency power supply is to be to carry out in the argon nitrogen atmosphere of 30～50kw or the argon oxygen atmosphere at plant capacity, and frequency is 40kHz; Wherein, the put english utmost point of turning out cloudy of intermediate frequency power supply sputters at when carrying out in the argon nitrogen atmosphere, and power is 30～40kw; Wherein, the put english utmost point of turning out cloudy of intermediate frequency power supply sputters at when carrying out in the argon oxygen atmosphere, and power is 30～50kw; It is to carry out in argon atmosphere or argon oxygen atmosphere that direct supply adds the pulse sputter, and power is 0.6～3kw;
Wherein, intermediate frequency power supply is put english to turn out cloudy and is carried out in argon oxygen atmosphere when utmost point sputtering sedimentation forms oxide skin, and carries out in argon nitrogen atmosphere during the formation of deposits nitride layer;
Direct supply adds when the pulse sputtering sedimentation forms metal level or alloy layer and carries out in argon atmosphere, and carries out in argon oxygen atmosphere during the formation of deposits oxide skin.
The vacuum magnetic-control sputtering plated film is adopted in the preparation of argentiferous low emissivity glass, and each rete can be by the one matter formation of deposits, also can be by several different materials formation of deposits successively.
Below in conjunction with specific embodiment argentiferous low emissivity glass and manufacture method thereof are further described.
Embodiment 1
The film layer structure of this argentiferous low emissivity glass embodiment 1 is followed successively by: glass, ZnSnO
x, Ag, NiCrO
x, ZnSnO
x, Ag, NiCrO
x, ZnSnO
x, Ag, NiCrO
x, ZnSnO
x, Ag, NiCrO
x, ZnSnO
x, Si
3N
4
In the present embodiment, basic unit's dielectric combination layer is ZnSnO
xLayer, thickness is 27nm.
In the present embodiment, first silver thickness is 8nm.
In the present embodiment, first blocking layer is NiCrO
xLayer, thickness is 0.3nm.
In the present embodiment, the first interlayer dielectric combination layer layer is ZnSnO
xLayer, thickness is 69nm.
In the present embodiment, second silver thickness is 12nm.
In the present embodiment, second blocking layer is NiCrO
xLayer, thickness is 0.3nm.
In the present embodiment, the second interlayer dielectric combination layer layer is ZnSnO
xLayer, thickness is 71nm.
In the present embodiment, the 3rd silver thickness is 13nm.
In the present embodiment, the 3rd blocking layer is NiCrO
xLayer, thickness is 0.3nm.
In the present embodiment, the 3rd interlayer dielectric combination layer layer is ZnSnO
xLayer, thickness is 73nm.
In the present embodiment, the 4th silver thickness is 14nm.
In the present embodiment, the 4th blocking layer is NiCrO
xLayer, thickness is 0.3nm.
In the present embodiment, the upper strata dielectric combination layer is by the first upper strata dielectric combination layer of two kinds of compounds formation of deposits successively and the second upper strata dielectric combination layer; Wherein, the first upper strata dielectric combination layer is ZnSnO
xLayer, thickness is 16nm, the second upper strata dielectric combination layer is Si
3N
4Layer, thickness is 11nm.
The concrete manufacturing process of above-mentioned each rete is:
Si
3N
4Layer adopts intermediate frequency power supply to put english to turn out cloudy the utmost point to sputter at formation of deposits in the argon nitrogen atmosphere, and the vacuum magnetic-control sputtering plant capacity is 30～40kw, and the intermediate frequency power supply frequency is 40kHz.
ZnSnO
xLayer adopts intermediate frequency power supply to put english to turn out cloudy the utmost point to sputter at formation of deposits in the argon oxygen atmosphere, and the vacuum magnetic-control sputtering plant capacity is 30～50kw, and the intermediate frequency power supply frequency is 40kHz.
NiCrO
xLayer employing direct supply adds pulse and sputters at formation of deposits in the argon oxygen atmosphere, and the vacuum magnetic-control sputtering plant capacity is 0.6kw, argon flow amount 1000sccm, oxygen flow control is relevant with actual sputtering power, normally 10 multiple value of performance number are 6sccm here, and purpose is in order to control NiCrO
xThe insufficient oxidation price of layer, the blocking capability that outstanding rete is stronger.
The Ag layer adopts direct supply to add pulse and sputters at formation of deposits in the argon atmosphere, and the vacuum magnetic-control sputtering plant capacity is 3kw.
This argentiferous low emissivity glass optical property and thermal characteristics are as follows:
Radiant ratio ε≤0.02, (structure is hollow product: heat transfer coefficient U-value＜1.1W/m 6mm argentiferous low emissivity glass+12mm gas cloud+6mm common white glass)
2K selects coefficient Lsg 〉=2.4.
Compare with traditional low emissivity glass that contains three silver layers, this product radiant ratio is lower by 0.015 than three-silver low radiation glass, and (structure is heat transfer coefficient: low 0.3W/m 6mm three-silver low radiation glass+12mm gas cloud+6mm common white glass) than three-silver low radiation glass hollow product
2K.
Four silver layers keep strict thickness, and this four silver low radiations glass appearance color satisfies:
| The monolithic appearance color | The glass surface reflected colour | Rete face reflected colour | Transmitted colour |
| Y? | Less than 7 | Less than 8 | Greater than 70 |
| L * | Less than 32 | Less than 34 | Greater than 87 |
| a * | -0.5～-1.8? | 1.2～1.8? | -6.0～-5.0? |
| b * | -3.5～-4.5? | -4.5～-5.5? | -1.0～2.0? |
Embodiment 2
The film layer structure of another specific embodiment of this argentiferous low emissivity glass is followed successively by: glass, Si
3N
4, Ag, NiCr, Si
3N
4, Ag, NiCr, Si
3N
4, Ag, NiCr, Si
3N
4, Ag, NiCr, Si
3N
4, TiO
2
In the present embodiment, basic unit's dielectric combination layer is Si
3N
4Layer, thickness is 25nm.
In the present embodiment, first silver thickness is 7.6nm.
In the present embodiment, first blocking layer is the NiCr layer, and thickness is 0.3nm.
In the present embodiment, the first interlayer dielectric combination layer layer is Si
3N
4Layer, thickness is 67nm.
In the present embodiment, second silver thickness is 10.8nm.
In the present embodiment, second blocking layer is the NiCr layer, and thickness is 0.3nm.
In the present embodiment, the second interlayer dielectric combination layer layer is Si
3N
4Layer, thickness is 69nm.
In the present embodiment, the 3rd silver thickness is 13.3nm.
In the present embodiment, the 3rd blocking layer is the NiCr layer, and thickness is 0.3nm.
In the present embodiment, the 3rd interlayer dielectric combination layer layer is Si
3N
4Layer, thickness is 71nm.
In the present embodiment, the 4th silver thickness is 14nm.
In the present embodiment, the 4th blocking layer is the NiCr layer, and thickness is 0.3nm.
In the present embodiment, the upper strata dielectric combination layer is by the first upper strata dielectric combination layer of two kinds of compounds formation of deposits successively and the second upper strata dielectric combination layer; Wherein, the first upper strata dielectric combination layer is Si
3N
4Layer, thickness is 15nm, the second upper strata dielectric combination layer is TiO
2Layer, thickness is 10nm.
The concrete manufacturing process of above-mentioned each rete is:
Si
3N
4Layer adopts intermediate frequency power supply to put english to turn out cloudy the utmost point to sputter at formation of deposits in the argon nitrogen atmosphere, and the vacuum magnetic-control sputtering plant capacity is 30～40kw, and the intermediate frequency power supply frequency is 40kHz.
TiO
2Layer adopts intermediate frequency power supply to put english to turn out cloudy the utmost point to sputter at formation of deposits in the argon nitrogen atmosphere, and the vacuum magnetic-control sputtering plant capacity is 30～40kw, and the intermediate frequency power supply frequency is 40kHz.
The NiCr layer adopts direct supply to add pulse and sputters at formation of deposits in the argon atmosphere, and the vacuum magnetic-control sputtering plant capacity is 0.6kw, argon flow amount 1000sccm.
The Ag layer adopts direct supply to add pulse and sputters at formation of deposits in the argon atmosphere, and the vacuum magnetic-control sputtering plant capacity is 3kw.
This argentiferous low emissivity glass optical property and thermal characteristics are as follows:
Radiant ratio ε≤0.02, (structure is hollow product: heat transfer coefficient U-value＜1.1W/m 6mm argentiferous low emissivity glass+12mm gas cloud+6mm common white glass)
2K selects coefficient Lsg 〉=2.4.
Compare with traditional low emissivity glass that contains three silver layers, this product radiant ratio is lower by 0.015 than three-silver low radiation glass, and (structure is heat transfer coefficient: low 0.3W/m 6mm three-silver low radiation glass+12mm gas cloud+6mm common white glass) than three-silver low radiation glass hollow product
2K.
Four silver layers keep strict thickness, and this four silver low radiations glass appearance color satisfies:
| The monolithic appearance color | The glass surface reflected colour | Rete face reflected colour | Transmitted colour |
| Y? | Less than 7 | Less than 8 | Greater than 70 |
| L * | Less than 32 | Less than 34 | Greater than 87 |
[0100]?
| a * | -0.5～-1.8? | 1.2～1.8? | -6.0～-5.0? |
| b * | -3.5～-4.5? | -4.5～-5.5? | -1.0～2.0? |
This argentiferous low emissivity glass traditional be to increase silver layer, blocking layer and dielectric layer combination layer in the low emissivity glass of infrared external reflection rete with silver, make silver thickness disperse and block like this by the carrying of dielectric layer combination layer, visible light transmissivity height when increasing silver thickness, and outward appearance does not present interference color.
By the rete design, the blocking layer on silver layer both sides and dielectric combination layer thickness are maintained in certain proportional range, silver layer is had the ability of better blocking; By coating process, make the blocking layer on silver layer and both sides thinner finer and close in addition.Like this, keeping low radiating effectively to improve the selection coefficient simultaneously, obtained good overall target; Four silver layers keep strict thickness, make this four silver low radiations glass appearance color satisfy:
| The monolithic appearance color | The glass surface reflected colour | Rete face reflected colour | Transmitted colour |
| Y? | Less than 7 | Less than 8 | Greater than 70 |
| L * | Less than 32 | Less than 34 | Greater than 87 |
| a * | -0.5～-1.8? | 1.2～1.8? | -6.0～-5.0? |
| b * | -3.5～-4.5? | -4.5～-5.5? | -1.0～2.0? |
Make that like this this argentiferous low emissivity glass outward appearance is better, select coefficient higher.
First, second upper strata dielectric combination layer is formed with the stack of differing materials alternating sputtering usually, is convenient to control membrane uniformity, stability and reasonable optical effect.
The second upper strata dielectric combination layer outermost material comprises TiO at least
2, SiO
2And Si
3N
4In a kind of, make the wear-resisting and weather resistance of product finally meet the physicochemical property standard.
The first upper strata dielectric combination layer thickness is about 1.5 times of the second upper strata dielectric combination layer thickness, makes product can obtain relative better heat-resisting, durable and optics thermal characteristics.
Dispose the no oil molecule pump of high pumping rate during plated film on the plated film line, keep the background vacuum in high vacuum 3 * 10
-6More than the mbar, system has good atmosphere isolation effect between several processing atmosphere sputtering zones, isolating coefficient is greater than 30, have film uniformity and rete composition homogeneity of ingredients preferably simultaneously, under the vacuum acquiring system of big pumping speed, strengthen the pressure of process gas, the cathode power that adopts direct current to add pulse carries out sputter, and, improved the quality of forming film of silver layer at the contiguous compartment position of silver-colored target configuration cryopump absorption moisture, effectively raise the visible light transmissivity of product.
Basic unit's dielectric combination layer and interlayer dielectric combination layer are antireflection film layer, play a part simultaneously to connect glass and functional layer, and adhesiveproperties are good between the glass, and have alleviated the internal stress of whole low-radiation film.The upper strata dielectric combination layer has directly increased described argentiferous low emissivity glass scratch resistance, wear-resisting and erosion-resisting performance.These two kinds of combination layers adopt the intermediate frequency power supply with good arc extinction performance of frequency 40kHz to put english to turn out cloudy utmost point sputter to form, and the specific refractory power matched well makes the reflectivity of product and transmitance reach ideal value.
Sputtering ZnS nO
x, NiCrO
x, NiCrN
xIn the chemical formula etc. incomplete oxidation thing or full oxide, incomplete nitride or complete nitride, x is greater than 0, the actual value the when maximum value that can get is metal or the certain oxygen of nonmetal adding or nitrogen flow (generally add oxygen or nitrogen gas stream value and be equivalent to 15 times of this target sputtering power) rear oxidation.
This argentiferous low emissivity glass radiation is low, visible light transmissivity is high, outward appearance does not present interference color, select the coefficient height, has good energy-saving effect; The unique film layer structure makes product have good weathering resistance, simultaneously the rete difficult drop-off, be difficult for oxidizedly, can be generalized to vehicle glass and residential houses.
The above embodiment has only expressed embodiment of the present utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model claim.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model design, can also make some distortion and improvement, these all belong to protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be as the criterion with claims.
Claims (10)
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|---|---|---|---|
| CN2010205031022U CN201825868U (en) | 2010-08-24 | 2010-08-24 | Silver-containing low emissivity glass |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205031022U CN201825868U (en) | 2010-08-24 | 2010-08-24 | Silver-containing low emissivity glass |
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| Publication Number | Publication Date |
|---|---|
| CN201825868U true CN201825868U (en) | 2011-05-11 |
Family
ID=43964418
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|---|---|---|---|
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102501449A (en) * | 2011-11-25 | 2012-06-20 | 林嘉宏 | Four-silver low emissivity coated glass capable of being processed in foreign places and manufacturing method thereof |
| CN102514279A (en) * | 2011-11-25 | 2012-06-27 | 林嘉宏 | Four-silver coated glass with low radiation and manufacturing technique thereof |
| CN102898040A (en) * | 2011-07-27 | 2013-01-30 | 林嘉宏 | Triple-silver low-emissivity coated glass and preparation method thereof |
-
2010
- 2010-08-24 CN CN2010205031022U patent/CN201825868U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102898040A (en) * | 2011-07-27 | 2013-01-30 | 林嘉宏 | Triple-silver low-emissivity coated glass and preparation method thereof |
| CN102501449A (en) * | 2011-11-25 | 2012-06-20 | 林嘉宏 | Four-silver low emissivity coated glass capable of being processed in foreign places and manufacturing method thereof |
| CN102514279A (en) * | 2011-11-25 | 2012-06-27 | 林嘉宏 | Four-silver coated glass with low radiation and manufacturing technique thereof |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110511 |