CN201825870U - Single-silver-layer low-radiation glass - Google Patents

Abstract

The utility model discloses a single-silver low-radiation glass. The film layer structure is as follows: glass, a base layer, a dielectric composite layer, a first barrier layer, an AgCu layer, a second barrier layer, and an upper dielectric composite layer. The single-silver low-emissivity glass uses a unique film structure to improve the traditional low-emissivity coated glass, so that the product has the advantages of low reflectivity, low transmittance, low emissivity and good selectivity coefficient. The indoor and outdoor colors of this kind of glass are close to neutral low-reflection color, and the optical performance is stable, the colors are diverse, and the weather resistance is good, which is convenient for widespread promotion.

Description

Single silver low-e glass

【Technical field】

The utility model relates to the field of special glass, in particular to a single-silver low-radiation glass. the

【Background technique】

Low-emissivity glass is a layer of infrared reflective material deposited on the surface of the glass, so that the visible light in the sunlight can pass through, and like an infrared reflector, it excludes the infrared rays in the sunlight and reflects the secondary radiant heat of the object back. special glass. Through the use of low-e glass, the effects of controlling sunlight, saving energy, controlling heat and improving the environment can be achieved. the

In the traditional single-silver low-emissivity glass processing, in order to achieve a better U value and selectivity coefficient Lsg, it is necessary to increase the thickness of the silver layer in the film layer to reduce the emissivity of the glass film layer to obtain an ideal selectivity coefficient , but increasing the thickness of the silver layer means that the reflectance of visible light increases, and the appearance color presents interference colors, which affects the use of glass. the

【Content of utility model】

Based on this, it is necessary to provide a single-silver low-emissivity glass with low reflectance of visible light and no disturbing color in appearance. the

A single-silver low-radiation glass, the film layer structure is as follows: glass, base layer, dielectric composite layer, first barrier layer, AgCu layer, second barrier layer, and upper dielectric composite layer. the

Preferably, the thickness of the dielectric composite layer is 40-50 nm. the

Preferably, the thickness of the upper dielectric combination layer is 40-50 nm. the

Preferably, the thickness of the base layer is 2-3 nm. the

Preferably, the thickness of the first barrier layer is 0.5-1.5 nm. the

Preferably, the thickness of the second barrier layer is 0.5-1.5 nm. the

Preferably, the thickness of the AgCu layer is 15-19 nm. the

Preferably, the upper dielectric composite layer includes a first upper dielectric composite layer deposited on the second barrier layer and a second upper dielectric composite layer deposited on the first upper dielectric composite layer. the

Preferably, the thickness of the first upper dielectric combination layer is 10-15 nm. the

Preferably, the thickness of the second upper dielectric combination layer is 30-35 nm. the

This single-silver low-emissivity glass uses AgCu instead of Ag to obtain a neutral transmission color; the dielectric combination layer is an anti-reflection film layer. By adding a dielectric combination layer, the visible light reflectance is reduced, and the appearance does not show interference color, which has good market application. prospect. the

【Description of drawings】

Fig. 1 is the structural representation of the single silver low-emissivity glass of an embodiment;

Fig. 2 is a flow chart of manufacturing single-silver low-emissivity glass in one embodiment. the

【Detailed ways】

A single-silver low-emissivity glass as shown in Figure 1 includes the following structures arranged in sequence: glass, base layer, dielectric composite layer, first barrier layer, AgCu layer, second barrier layer, and upper dielectric composite layer. the

The dielectric combination layer and the upper dielectric combination layer are composed of TiO ₂ , ZnSnO _x , SnO ₂ , ZnO, SiO ₂ , Ta ₂ O ₅ , BiO ₂ , Al ₂ O ₃ , ZnAl ₂ O ₄ , Nb ₂ O ₅ and Si ₃ N ₄ One or more of them; the thickness of the dielectric composite layer is 40-50nm; the thickness of the upper dielectric composite layer is 40-50nm.

Preferably, the dielectric combination layer can be formed by sequentially depositing two different compounds. the

The base layer is composed of one or more of Ni, Cr, Ti and NiCr; the first barrier layer and the second barrier layer are composed of one or two of NiCrO _x and NiCrN _x ; the thickness of the base layer is 2-3nm; the first The thickness of the barrier layer is 0.5-1.5nm; the thickness of the second barrier layer is 0.5-1.5nm; the AgCu layer is composed of silver-copper alloy whose mass composition ratio is 45-55% for Ag and 55-45% for Cu.

Preferably, the thickness relationship of the AgCu layer satisfies the range of color values in the following table for the appearance color of the product:

Monolithic Appearance Color Glass surface reflection color Reflective color of film layer Transmission color Y less than 10 Less than 6 Less than 53 L* Less than 37 Less than 27 Less than 79 a* 0～-1 18～23 -1～-3 b* -1～-3 -10～-16 1.0～3.5

More preferably, the thickness of the AgCu layer is 15-19 nm. the

Preferably, the upper dielectric composite layer includes a first upper dielectric composite layer deposited on the second barrier layer and a second upper dielectric composite layer deposited on the first upper dielectric composite layer; the first upper dielectric composite layer consists of TiO ₂ , One or more of ZnSnO _x , SnO ₂ , ZnO, SiO ₂ , Ta ₂ O ₅ , BiO ₂ , Al ₂ O ₃ , ZnAl ₂ O ₄ , Nb ₂ O ₅ and Si ₃ N ₄ ; the second upper layer The dielectric combination layer is composed of one or more of TiO ₂ , SnO ₂ , ZnO, SiO ₂ , Ta ₂ O ₅ , BiO ₂ , Al ₂ O ₃ , ZnAl ₂ O ₄ , Nb ₂ O ₅ and Si ₃ N ₄ ; The thickness of the first upper dielectric composite layer is 10-15nm; the thickness of the second upper dielectric composite layer is 30-35nm.

More preferably, the first and second upper dielectric combination layers are generally composed of different materials alternately sputtered and stacked. the

Particularly preferably, the material of the outermost layer of the second upper dielectric composite layer includes at least one of TiO ₂ , SiO ₂ and Si ₃ N ₄ .

The manufacturing method of the above-mentioned single silver low-emissivity glass as shown in Figure 2, comprises the step of depositing each film layer successively, specifically as follows:

Clean the glass and place it in the magnetron sputtering area after drying;

DC power supply plus pulse sputtering to deposit the base layer;

Intermediate frequency power supply plus rotating cathode sputtering to deposit the first dielectric combination layer;

Intermediate frequency power supply plus rotating cathode sputtering to deposit the second dielectric combination layer;

DC power supply plus pulse sputtering to deposit the first barrier layer;

DC power supply plus pulse sputtering to deposit AgCu layer;

DC power supply plus pulse sputtering to deposit the second barrier layer;

Intermediate frequency power supply plus rotating cathode sputtering to deposit the upper dielectric combination layer;

Product testing. the

Preferably, when depositing the coating, the coating line is equipped with an oil-free molecular pump to keep the vacuum degree of the system background vacuum above 3 × 10 ^-6 mbar; the adjacent compartment of the silver target is equipped with a cryopump for absorbing moisture; Rotary cathode sputtering is carried out in an argon-nitrogen atmosphere with a power of 80-90kW or an argon-oxygen atmosphere with a power of 50-60kW, and the frequency is 40kHz; DC power plus pulse sputtering is carried out in an argon atmosphere with a power of 2～3kW.

Among them, the intermediate frequency power supply plus rotating cathode sputtering deposits and forms oxide layers in an argon-oxygen atmosphere, while the deposition and formation of nitrides is carried out in an argon-nitrogen atmosphere; DC power plus pulse sputtering deposits and forms metal layers or alloy layers in It is carried out in an argon atmosphere, and the deposition is carried out in an argon-oxygen atmosphere when forming an oxide layer. the

The manufacture of single-silver low-emissivity glass adopts vacuum magnetron sputtering coating, and each film layer can be formed by depositing a single substance, or several different substances can be deposited sequentially. the

The single-silver low-emissivity glass and its manufacturing method will be further described below in conjunction with specific examples. the

Example 1

The film layer structure of the single silver low-emissivity glass is: glass, NiCr, Si ₃ N ₄ , ZnSnO _x , NiCrO _x , AgCu, NiCrO _x , ZnSnO _x , Si ₃ N ₄ .

In this embodiment, the base layer is a NiCr layer with a thickness of 2 nm. the

In this embodiment, the dielectric combination layer is deposited sequentially by two compounds to form the first dielectric combination layer and the second dielectric combination layer; the first dielectric combination layer is Si ₃ N ₄ layers with a thickness of 30nm; the second dielectric combination layer is ZnSnO _x- layer with a thickness of 10 nm.

In this embodiment, the first barrier layer is a NiCrO _x layer with a thickness of 2 nm.

In this embodiment, the thickness of AgCu is 15 nm, and the AgCu layer is composed of a silver-copper alloy with a mass composition ratio of 50% Ag and 50% Cu; in other embodiments, the mass ratio of Ag ranges from 45% to 55%. the

In this embodiment, the second barrier layer is a NiCrO _x layer with a thickness of 2 nm.

In this embodiment, the upper dielectric composite layer is deposited sequentially by two compounds to form the first upper dielectric composite layer and the second upper dielectric composite layer; wherein, the first upper dielectric composite layer is a ZnSnO _X layer with a thickness of 10 nm, and the second upper dielectric composite layer The dielectric composite layer is a Si ₃ N ₄ layer with a thickness of 35nm.

The specific manufacturing process of the above-mentioned film layers is as follows:

The Si ₃ N ₄ layer is deposited by sputtering deposition in an argon-nitrogen atmosphere with an intermediate frequency power supply and a rotating cathode. The power of the vacuum magnetron sputtering equipment is 80-90kW, and the frequency of the intermediate frequency power supply is 40kHz.

ZnSnO _x- layer deposition is carried out in an argon-oxygen atmosphere with an intermediate frequency power supply and a rotating cathode. The power of the vacuum magnetron sputtering equipment is 50-60kW, and the frequency of the intermediate frequency power supply is 40kHz.

The deposition of NiCrO _x layer was carried out in argon atmosphere with DC pulse, and the power of the vacuum magnetron sputtering equipment was 2kW.

The deposition of the AgCu layer was carried out in an argon atmosphere using DC pulses, and the power of the vacuum magnetron sputtering equipment was 2kW. the

NiCr layer deposition is carried out in an argon atmosphere with DC pulses, and the power of the vacuum magnetron sputtering equipment is 3kW. the

The optical and thermal properties of the single silver low-e glass are as follows:

Emissivity ≤ 0.05, heat transfer coefficient of hollow product (structure: 6mm coated glass + 12mm air layer + 6mm ordinary white glass) < 1.5W/m ² ·K, transmittance ≤ 50%, reflectivity ≤ 15%, Selection factor ≥ 1.3.

The relationship between the thickness of each silver-copper layer satisfies the range of color values in the following table for the appearance color of the product:

Monolithic Appearance Color Glass surface reflection color Reflective color of film layer Transmission color Y less than 10 Less than 6 Less than 53 L* Less than 37 Less than 27 Less than 79 a* 0～-1 18～23 -1～-3 b* -1～-3 -10～-16 1.0～3.5

Example 2

The film layer structure of the single silver low-emissivity glass is: glass, NiCr, Si ₃ N ₄ , ZnSnO _x , NiCrO _x , AgCu, NiCrO _x , ZnSnO _x , Si ₃ N ₄ .

In this embodiment, the base layer is a NiCr layer with a thickness of 2 nm. the

In this embodiment, the dielectric combination layer is deposited sequentially by two compounds to form the first dielectric combination layer and the second dielectric combination layer; the first dielectric combination layer is Si ₃ N ₄ layers with a thickness of 30nm; the second dielectric combination layer is ZnSnO _x- layer with a thickness of 15 nm.

In this embodiment, the first barrier layer is a NiCr layer with a thickness of 2 nm. the

In this embodiment, the thickness of AgCu is 19nm, and the AgCu layer is composed of a silver-copper alloy with a mass composition ratio of 50% Ag and 50% Cu; in other embodiments, the mass ratio of Ag ranges from 45% to 55%. the

In this embodiment, the second barrier layer is a NiCr layer with a thickness of 2 nm. the

In this embodiment, the upper dielectric composite layer is deposited sequentially by two compounds to form the first upper dielectric composite layer and the second upper dielectric composite layer; wherein, the first upper dielectric composite layer is a ZnSnO _X layer with a thickness of 15 nm, and the second upper dielectric composite layer The dielectric composite layer is a Si ₃ N ₄ layer with a thickness of 35nm.

The specific manufacturing process of the above-mentioned film layers is as follows:

The Si ₃ N ₄ layer is deposited by sputtering deposition in an argon-nitrogen atmosphere with an intermediate frequency power supply and a rotating cathode. The power of the vacuum magnetron sputtering equipment is 80-90kW, and the frequency of the intermediate frequency power supply is 40kHz.

ZnSnO _x- layer deposition is carried out in an argon-oxygen atmosphere with an intermediate frequency power supply and a rotating cathode. The power of the vacuum magnetron sputtering equipment is 50-60kW, and the frequency of the intermediate frequency power supply is 40kHz.

The deposition of NiCrO _x layer was carried out in argon atmosphere with DC pulse, and the power of the vacuum magnetron sputtering equipment was 2kW.

The deposition of the AgCu layer was carried out in an argon atmosphere using DC pulses, and the power of the vacuum magnetron sputtering equipment was 2kW. the

NiCr layer deposition is carried out in an argon atmosphere with DC pulses, and the power of the vacuum magnetron sputtering equipment is 3kW. the

The optical and thermal properties of the single silver low-e glass are as follows:

Emissivity ≤ 0.05, heat transfer coefficient of hollow product (structure: 6mm coated glass + 12mm air layer + 6mm ordinary white glass) < 1.5W/m ² ·K, transmittance ≤ 50%, reflectivity ≤ 15%, Selection factor ≥ 1.3.

The relationship between the thickness of each silver-copper layer satisfies the range of color values in the following table for the appearance color of the product:

Monolithic Appearance Color Glass surface reflection color Reflective color of film layer Transmission color Y less than 10 Less than 6 Less than 53 L ^* Less than 37 Less than 27 Less than 79 a ^* 0～-1 18～23 -1～-3 b ^* -1～-3 -10～-16 1.0～3.5

This single-silver low-emissivity glass uses AgCu instead of Ag to obtain a neutral transmission color; the dielectric combination layer is an anti-reflection film layer, and the visible light reflectance is reduced by adding a dielectric combination layer. the

The base layer is a metal or metal alloy thin film layer. By adding the base layer, the absorption rate of the film layer is increased, and the high reflectivity caused by the thickening of the AgCu layer is slowed down; through the design of the film layer, the refractive index of the dielectric layer on both sides of the AgCu layer is adopted. Matching high and low to obtain a wider color range of neutral transmission colors. the

The thickness of the AgCu layer is 15-19nm, which meets the color value range in the following table for the appearance color of the product:

Monolithic Appearance Color Glass surface reflection color Reflective color of film layer Transmission color Y less than 10 Less than 6 Less than 53

L ^* Less than 37 Less than 27 Less than 79 a ^* 0～-1 18～23 -1～-3 b ^* -1～-3 -10～-16 1.0～3.5

In this way, the appearance of the silver-containing low-emissivity glass is better, and the selectivity coefficient is higher. the

The first and second upper dielectric composite layers are usually composed of different materials alternately sputtered and stacked, which is convenient for controlling the uniformity, firmness and reasonable optical effect of the film layer. the

The material of the outermost layer of the second upper dielectric combination layer contains at least one of TiO ₂ , SiO ₂ and Si ₃ N ₄ , so that the wear resistance and durability of the product finally meet the physical and chemical performance standards.

When coating, the coating line is equipped with a high-speed oil-free molecular pump to keep the background vacuum above 3×10 ^-6 mbar. The system has a good atmosphere isolation effect between sputtering areas of several process atmospheres. The coefficient is greater than 30, and it has good film thickness uniformity and film composition uniformity. Under the vacuum acquisition system with high pumping speed, the pressure of the process gas is increased, and the cathode power supply of DC plus pulse is used for sputtering, and A cryopump is installed adjacent to the AgCu target to absorb water, which improves the film quality of the AgCu layer, effectively improves the visible light transmittance of the product, and the color saturation and weather resistance of the entire radiation film layer.

The dielectric combination layer is an anti-reflection film layer, which also plays the role of connecting the glass and the functional layer, has good bonding performance with the glass, and relieves the internal stress of the entire low-emissivity film. The upper dielectric composite layer directly increases the scratch resistance, wear resistance and corrosion resistance of the single silver low-emissivity glass. The dielectric combination layer is formed by an intermediate frequency power supply with good arc extinguishing performance at a frequency of 40kHz and rotating cathode sputtering. The refractive index is well matched, so that the reflectivity and transmittance of the product can reach ideal values. the

The single-silver low-emissivity glass adopts a unique film structure, new process and new method to improve the traditional low-emissivity coated glass, so that the product has the advantages of low reflectivity, low transmittance, low emissivity and good selectivity coefficient. The indoor and outdoor colors of this kind of glass are close to neutral low-reflection color, and the optical performance is stable, the colors are diverse, and the weather resistance is good, which is convenient for widespread promotion. the

The above-mentioned embodiments only express the implementation manner of the present utility model, and its description is relatively specific and detailed, but it should not be interpreted as limiting the patent scope of the present utility model. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the scope of protection of the utility model patent should be based on the appended claims. the

Claims (10)

1. single silver low radiation glass is characterized in that, this glass film layer structure is followed successively by: glass, basic unit, dielectric combination layer, first blocking layer, AgCu layer, second blocking layer, upper strata dielectric combination layer.

2. single silver low radiation glass as claimed in claim 1 is characterized in that described dielectric combination layer thickness is 40～50nm.

3. single silver low radiation glass as claimed in claim 1 is characterized in that, described upper strata dielectric combination layer thickness is 40～50nm.

4. single silver low radiation glass as claimed in claim 1 is characterized in that described groundwork thickness is 2～3nm.

5. single silver low radiation glass as claimed in claim 1 is characterized in that described first barrier layer thickness is 0.5～1.5nm.

6. single silver low radiation glass as claimed in claim 1 is characterized in that described second barrier layer thickness is 0.5～1.5nm.

7. as each described single silver low radiation glass in the claim 1～6, it is characterized in that described AgCu layer thickness is 15～19nm.

8. single silver low radiation glass as claimed in claim 1, it is characterized in that described upper strata dielectric combination layer comprises first upper strata dielectric combination layer that is deposited on described second blocking layer and the second upper strata dielectric combination layer that is deposited on the described first upper strata dielectric combination layer.

9. single silver low radiation glass as claimed in claim 8 is characterized in that the thickness of the described first upper strata dielectric combination layer is 10～15nm.

10. single as claimed in claim 8 or 9 silver low radiation glass is characterized in that the thickness of the described second upper strata dielectric combination layer is 30～35nm.

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