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CN209242941U - double silver glass - Google Patents

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CN209242941U
CN209242941U CN201821822440.5U CN201821822440U CN209242941U CN 209242941 U CN209242941 U CN 209242941U CN 201821822440 U CN201821822440 U CN 201821822440U CN 209242941 U CN209242941 U CN 209242941U
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dielectric layer
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dielectric
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刘莹
吕宜超
黄剑
谭小安
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Shenzhen Csg Application Technology Co Ltd
CSG Holding Co Ltd
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Shenzhen Csg Application Technology Co Ltd
CSG Holding Co Ltd
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Abstract

本实用新型实施例公开了一种双银玻璃,包括玻璃基底和依次位于玻璃基底上的第一复合介质层、第一种子层、第一功能层、第一保护层、第二介质层、第二种子层、第二功能层、第二保护层、第三复合介质层,其中,第一复合介质层包括的第一下子介质层、第一中间层、第一上子介质层,第一下子介质层与玻璃基底相邻,第一上子介质层与第一种子层相邻,第一中间层位于第一下子介质层与第一上子介质层之间,第三复合介质层包括的第三下子介质层、第三中间层、第三上子介质层,第三下子介质层与第二保护层相邻,第三中间层位于第三下子介质层与第三上子介质层之间,并且第一中间层和第三中间层包含金属层。该双银玻璃可提升其钢化后光学性能。

The embodiment of the utility model discloses a double-silver glass, which comprises a glass substrate and a first composite dielectric layer, a first seed layer, a first functional layer, a first protective layer, a second dielectric layer, and a second dielectric layer sequentially located on the glass substrate. Two sublayers, a second functional layer, a second protective layer, and a third composite dielectric layer, wherein the first composite dielectric layer includes a first lower dielectric layer, a first middle layer, a first upper dielectric layer, a first The lower sub-dielectric layer is adjacent to the glass substrate, the first upper sub-dielectric layer is adjacent to the first seed layer, the first middle layer is located between the first lower sub-dielectric layer and the first upper sub-dielectric layer, and the third composite dielectric layer Including the third lower sub-dielectric layer, the third middle layer, the third upper sub-dielectric layer, the third lower sub-dielectric layer is adjacent to the second protective layer, the third middle layer is located between the third lower sub-dielectric layer and the third upper sub-dielectric layer between, and the first intermediate layer and the third intermediate layer include a metal layer. The double-silver glass can improve its optical performance after tempering.

Description

双银玻璃double silver glass

技术领域technical field

本实用新型涉及一种节能玻璃,尤其是一种双银玻璃。The utility model relates to an energy-saving glass, in particular to a double-silver glass.

背景技术Background technique

随着国家节能减排政策的执行力度加大以及人们对低碳环保意识的加强,以低辐射玻璃为代表的节能玻璃在门窗、玻璃幕墙中的应用越来越广泛。低辐射玻璃家族中,节能性能优异的双银低辐射玻璃得到大量应用。然而,现有的双银低辐射玻璃的光学性能还存在一定的不足,因此还需进一步提升其光学性能以适应更高的要求。With the implementation of national energy conservation and emission reduction policies and people's awareness of low-carbon environmental protection, energy-saving glass represented by low-emissivity glass is more and more widely used in doors, windows and glass curtain walls. In the low-e glass family, double-silver low-e glass with excellent energy-saving performance has been widely used. However, the optical performance of the existing double-silver low-emissivity glass still has certain deficiencies, so its optical performance needs to be further improved to meet higher requirements.

实用新型内容Utility model content

针对上述现在,本实用新型实施例提供一种双银玻璃,可提升其光学性能。In view of the above problems, embodiments of the present utility model provide a double-silver glass, which can improve its optical performance.

本实用新型实施例提供一种双银玻璃,包括玻璃基底,所述双银玻璃还包括依次位于所述玻璃基底上的第一复合介质层、第一种子层、第一功能层、第一保护层、第二介质层、第二种子层、第二功能层、第二保护层、第三复合介质层,其中,所述第一复合介质层包括的第一下子介质层、第一中间层、第一上子介质层,所述第一下子介质层与所述玻璃基底相邻,所述第一上子介质层与所述第一种子层相邻,所述第一中间层位于所述第一下子介质层与所述第一上子介质层之间,所述第三复合介质层包括的第三下子介质层、第三中间层、第三上子介质层,所述第三下子介质层与所述第二保护层相邻,所述第三中间层位于所述第三下子介质层与所述第三上子介质层之间,并且所述第一中间层、所述第二中间层和所述第三中间层包含金属层。The embodiment of the utility model provides a double-silver glass, which includes a glass substrate. The double-silver glass also includes a first composite dielectric layer, a first seed layer, a first functional layer, and a first protection layer sequentially located on the glass substrate. layer, the second dielectric layer, the second seed layer, the second functional layer, the second protective layer, and the third composite dielectric layer, wherein the first composite dielectric layer includes the first lower dielectric layer, the first intermediate layer , a first upper sub-dielectric layer, the first lower sub-dielectric layer is adjacent to the glass substrate, the first upper sub-dielectric layer is adjacent to the first seed layer, and the first intermediate layer is located at the Between the first lower sub-dielectric layer and the first upper sub-dielectric layer, the third composite dielectric layer includes a third lower sub-dielectric layer, a third middle layer, a third upper sub-dielectric layer, and the third The lower sub-dielectric layer is adjacent to the second protective layer, the third intermediate layer is located between the third lower sub-dielectric layer and the third upper sub-dielectric layer, and the first intermediate layer, the first The second intermediate layer and the third intermediate layer comprise metal layers.

在本实用新型的一个实施例中,所述金属层包含铌、铁、钽、镍、铬或锆的单质或合金。In one embodiment of the present utility model, the metal layer contains a single substance or an alloy of niobium, iron, tantalum, nickel, chromium or zirconium.

在本实用新型的一个实施例中,所述第一下子介质层、所述第一上子介质层、所述第三下子介质层以及所述第三上子介质层分别包含金属或非金属的氧化物或氮化物。In one embodiment of the present invention, the first lower dielectric layer, the first upper dielectric layer, the third lower dielectric layer and the third upper dielectric layer respectively contain metal or non-metal oxides or nitrides.

在本实用新型的一个实施例中,所述第一下子介质层、所述第一上子介质层、所述第三下子介质层以及所述第三上子介质层分别包含氮化硅、锌锡氧化物、锌铝氧化物、氧化硅、氧化钛或氧化铌。In one embodiment of the present invention, the first lower sub-dielectric layer, the first upper sub-dielectric layer, the third lower sub-dielectric layer and the third upper sub-dielectric layer respectively comprise silicon nitride, Zinc tin oxide, zinc aluminum oxide, silicon oxide, titanium oxide or niobium oxide.

在本实用新型的一个实施例中,所述第一保护层和所述第二保护层分别包含镍铬合金或镍铬氧化物,所述第一种子层和所述第二种子层分别包含氧化锌、锌铝氧化物或锌锡氧化物。In one embodiment of the present invention, the first protective layer and the second protective layer respectively contain nickel-chromium alloy or nickel-chromium oxide, and the first seed layer and the second seed layer respectively contain oxide Zinc, zinc aluminum oxide or zinc tin oxide.

在本实用新型的一个实施例中,所述双银玻璃还包括位于所述第一保护层与所述第二介质层之间的第一热稳介质层和/或位于所述第二保护层与所述第三复合介质层之间的第二热稳介质层。In one embodiment of the present invention, the double-silver glass further includes a first heat-stable dielectric layer between the first protective layer and the second dielectric layer and/or a thermally stable dielectric layer located between the second protective layer and the second heat-stable medium layer between the third composite medium layer.

在本实用新型的一个实施例中,所述第一下子介质层和所述第一上子介质层的厚度分别为0~80nm,所述第三下子介质层和所述第三上子介质层的厚度分别为0~100nm。In one embodiment of the present invention, the thicknesses of the first lower sub-dielectric layer and the first upper sub-dielectric layer are 0-80 nm respectively, and the thicknesses of the third lower sub-dielectric layer and the third upper sub-dielectric layer are The thicknesses of the layers are 0 to 100 nm, respectively.

在本实用新型的一个实施例中,所述第一种子层、所述第一保护层、所述第二种子层或所述第二保护层的厚度为0~20nm。In one embodiment of the present invention, the thickness of the first seed layer, the first protective layer, the second seed layer or the second protective layer is 0-20 nm.

在本实用新型的一个实施例中,所述第一功能层和所述第二功能层分别包含银或铜银合金,所述第一功能层和所述第二功能层的厚度分别为0~40nm。In one embodiment of the present utility model, the first functional layer and the second functional layer respectively contain silver or copper-silver alloy, and the thicknesses of the first functional layer and the second functional layer are respectively 0 to 40nm.

上述技术方案可以具有如下优点:本实用新型实施例提供的双银玻璃采用独特的双复合介质层的膜层结构,可调节各层对应不同的光谱波段的吸收强度,提升双银玻璃钢化后的光学性能。The above-mentioned technical solution can have the following advantages: the double-silver glass provided by the embodiment of the utility model adopts a unique double-composite dielectric layer film structure, which can adjust the absorption intensity of each layer corresponding to different spectral bands, and improve the tempered double-silver glass. optical properties.

附图说明Description of drawings

为了更清楚地说明本实用新型实施例的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本实用新型的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention , for those skilled in the art, other drawings can also be obtained according to these drawings on the premise of not paying creative work.

图1为本实用新型实施例提供的一种双银玻璃的结构示意图;Fig. 1 is the structural representation of a kind of double silver glass that the utility model embodiment provides;

图2是图1中的双银玻璃的进一步结构示意图。Fig. 2 is a further structural schematic diagram of the double silver glass in Fig. 1 .

具体实施方式Detailed ways

下面将结合本实用新型实施例中的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本实用新型一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本实用新型护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. example. Based on the embodiments of the present utility model, all other embodiments obtained by persons of ordinary skill in the art without creative efforts belong to the protection scope of the present utility model.

如图1所示,本实用新型一实施例提供一种双银玻璃200,包括玻璃基底10与依次形成于玻璃基底10上的第一复合介质层11、第一种子层12、第一功能层13、第一保护层14、第二介质层15、第二种子层16、第二功能层17、第二保护层18以及第三复合介质层19。第一复合介质层11、第一种子层12、第一功能层13、第一保护层14、第二介质层15、第二种子层16、第二功能层17、第二保护层18以及第三复合介质层19均可由固体材料构成。As shown in FIG. 1 , an embodiment of the present invention provides a double-silver glass 200, which includes a glass substrate 10 and a first composite dielectric layer 11, a first seed layer 12, and a first functional layer sequentially formed on the glass substrate 10. 13. The first protective layer 14 , the second dielectric layer 15 , the second seed layer 16 , the second functional layer 17 , the second protective layer 18 and the third composite dielectric layer 19 . The first composite dielectric layer 11, the first seed layer 12, the first functional layer 13, the first protective layer 14, the second dielectric layer 15, the second seed layer 16, the second functional layer 17, the second protective layer 18 and the first All three composite dielectric layers 19 can be made of solid materials.

其中,玻璃基底10可为普通玻璃、有色玻璃、超白玻璃或其它玻璃,其厚度可为3~10毫米(mm),优选为6mm。Wherein, the glass substrate 10 can be ordinary glass, colored glass, ultra-clear glass or other glass, and its thickness can be 3-10 millimeters (mm), preferably 6 mm.

第一复合介质层11例如包括第一下子介质层111、第一中间层112以及第一上子介质层113。第一下子介质层111与玻璃基底10相邻,第一上子介质层113与第一种子层12相邻,第一中间层112位于第一下子介质层111与第一上子介质层113之间。第三复合介质层19例如包括第三下子介质层191、第三中间层192以及第三上子介质层193。第三下子介质层191与第二保护层18相邻,第三上子介质层193为顶层,第三中间层192位于第三下子介质层191与第三上子介质层193之间。The first composite dielectric layer 11 includes, for example, a first lower sub-dielectric layer 111 , a first middle layer 112 and a first upper sub-dielectric layer 113 . The first lower sub-dielectric layer 111 is adjacent to the glass substrate 10, the first upper sub-dielectric layer 113 is adjacent to the first seed layer 12, and the first intermediate layer 112 is located between the first lower sub-dielectric layer 111 and the first upper sub-dielectric layer. Between 113. The third composite dielectric layer 19 includes, for example, a third lower sub-dielectric layer 191 , a third middle layer 192 and a third upper sub-dielectric layer 193 . The third lower sub-dielectric layer 191 is adjacent to the second protection layer 18 , the third upper sub-dielectric layer 193 is the top layer, and the third middle layer 192 is located between the third lower sub-dielectric layer 191 and the third upper sub-dielectric layer 193 .

第一下子介质层111、第一上子介质层113、第三下子介质层191以及第三上子介质层193例如分别包含金属或非金属的氧化物和氮化物,例如氮化硅(Si3N4)、锌锡氧化物(ZnSnOx)、锌铝氧化物(AZO)、氧化硅(SiO2)、氧化钛(TiO2)或氧化铌(Nb2O5)等。第一下子介质层111和第一上子介质层113的厚度分别为0~80nm。第三下子介质层191和第三上子介质层193的厚度分别为0~100nm。第一中间层112和第三中间层192分别为金属层。具体地,第一中间层112和第三中间层192例如分别包含铌、铁、钽、镍、铬或锆的单质或合金例如镍铬合金(NiCr)等。第一中间层112和第三中间层192的厚度分别为0~30nm。如此一来,双复合介质层膜层结构的可钢化双银Low-E产品能够自由调节各层的吸收强度,以提升双银玻璃的光学性能。The first lower sub-dielectric layer 111, the first upper sub-dielectric layer 113, the third lower sub-dielectric layer 191, and the third upper sub-dielectric layer 193, for example, respectively include metal or non-metallic oxides and nitrides, such as silicon nitride (Si 3 N 4 ), zinc tin oxide (ZnSnO x ), zinc aluminum oxide (AZO), silicon oxide (SiO 2 ), titanium oxide (TiO 2 ) or niobium oxide (Nb 2 O 5 ), etc. The thicknesses of the first lower sub-dielectric layer 111 and the first upper sub-dielectric layer 113 are 0-80 nm respectively. The thicknesses of the third lower sub-dielectric layer 191 and the third upper sub-dielectric layer 193 are 0-100 nm respectively. The first intermediate layer 112 and the third intermediate layer 192 are respectively metal layers. Specifically, the first intermediate layer 112 and the third intermediate layer 192 respectively contain, for example, a single substance of niobium, iron, tantalum, nickel, chromium or zirconium or an alloy such as nickel-chromium alloy (NiCr). The thicknesses of the first intermediate layer 112 and the third intermediate layer 192 are 0-30 nm, respectively. In this way, the toughened double-silver Low-E product with double-composite dielectric layer film structure can freely adjust the absorption intensity of each layer to improve the optical performance of double-silver glass.

第二介质层15例如包含金属或非金属的氧化物或氮化物,例如氮化硅(Si3N4)、锌锡氧化物(ZnSnOx)、锌铝氧化物(AZO)、氧化硅(SiO2)、氧化钛(TiO2)或氧化铌(Nb2O5)等。第二介质层15的厚度为0~100nm。The second dielectric layer 15 includes, for example, metal or non-metal oxides or nitrides, such as silicon nitride (Si 3 N 4 ), zinc tin oxide (ZnSnO x ), zinc aluminum oxide (AZO), silicon oxide (SiO 2 ), titanium oxide (TiO 2 ) or niobium oxide (Nb 2 O 5 ), etc. The thickness of the second dielectric layer 15 is 0-100 nm.

此外,第一种子层12、第一保护层14、第二种子层16和第二保护层18例如分别包含金属、金属合金或金属合金氧化物,例如镍铬合金(NiCr)或镍铬氧化物(NiCrOx)等。进一步地,第一种子层12和第二种子层16例如分别包含氧化锌(ZnO或ZnAlOx)、锌铝氧化物(AZO)或锌锡氧化物(ZnSnOx)等。第一种子层12、第一保护层14、第二种子层16以及第二保护层18的厚度分别为0~20nm。Furthermore, the first seed layer 12, the first protective layer 14, the second seed layer 16 and the second protective layer 18 contain, for example, a metal, a metal alloy or a metal alloy oxide, such as nickel-chromium alloy (NiCr) or nickel-chromium oxide, respectively. (NiCrO x ) and so on. Further, the first seed layer 12 and the second seed layer 16 respectively include zinc oxide (ZnO or ZnAlO x ), zinc aluminum oxide (AZO) or zinc tin oxide (ZnSnO x ), for example. The thicknesses of the first seed layer 12 , the first protection layer 14 , the second seed layer 16 and the second protection layer 18 are 0-20 nm, respectively.

第一功能层13和第二功能层17例如包含银(Ag)或铜银(AgCu)合金。第一功能层13和第二功能层17的厚度分别为0~40nm。The first functional layer 13 and the second functional layer 17 contain, for example, silver (Ag) or a copper-silver (AgCu) alloy. The thicknesses of the first functional layer 13 and the second functional layer 17 are respectively 0-40 nm.

另外,如图2所示,双银玻璃200还例如包括位于第一保护层14与第二介质层15之间的第一热稳介质层21和/或位于第二保护层18与第三复合介质层19的第三子介质层191之间的第二热稳介质层22。第一热稳介质层21和第二热稳介质层22可提高双银玻璃200的热稳定性。具体地,第一热稳介质层21和/或第二热稳介质层22由金属氧化物陶瓷靶溅射获得,例如包含锌铝氧化物(AZO、ZnAlOx)、锌锡氧化物(ZnSnOx)、氧化钛(TiOx)。在钢化加工过程中,热稳介质层有利于提升Low-E膜层及产品的热稳定性,使得产品膜层能更好的耐受钢化的考验而不被破坏。另外,热稳介质层的使用,除了可以提高产品热稳定性以外,还可以提升产品的光学性能。再者,由于氧气是影响产品热稳定性的重要因素,因此在膜层制备过程中,热稳介质层采用金属氧化物陶瓷靶溅射时不加氧或少加氧,可以减少氧气向相邻靶位的扩散以提升产品的热稳定性。通常,第一热稳介质层21和第二热稳介质层22的厚度分别为0-50nm。In addition, as shown in FIG. 2 , the double silver glass 200 also includes, for example, a first heat-stable dielectric layer 21 between the first protective layer 14 and the second dielectric layer 15 and/or a composite layer between the second protective layer 18 and the third composite layer. The second thermally stable dielectric layer 22 between the third sub-dielectric layer 191 of the dielectric layer 19 . The first thermally stable dielectric layer 21 and the second thermally stable dielectric layer 22 can improve the thermal stability of the double silver glass 200 . Specifically, the first thermally stable dielectric layer 21 and/or the second thermally stable dielectric layer 22 are obtained by sputtering a metal oxide ceramic target, such as zinc aluminum oxide (AZO, ZnAlOx), zinc tin oxide (ZnSnOx), Titanium oxide (TiOx). During the tempering process, the thermally stable medium layer is beneficial to improve the thermal stability of the Low-E film layer and the product, so that the product film layer can better withstand the test of tempering without being damaged. In addition, the use of thermally stable dielectric layer can not only improve the thermal stability of the product, but also improve the optical performance of the product. Furthermore, since oxygen is an important factor affecting the thermal stability of the product, during the film preparation process, the thermally stable dielectric layer is sputtered with a metal oxide ceramic target without adding oxygen or adding less oxygen, which can reduce the flow of oxygen to the adjacent Diffusion of the target site to improve the thermal stability of the product. Usually, the thicknesses of the first thermally stable dielectric layer 21 and the second thermally stable dielectric layer 22 are respectively 0-50 nm.

综上所述,本实用新型实施例提供的双银玻璃200的所有膜层均可由固体材料构成,并且采用独特的双复合介质层的膜层结构,提升了双银玻璃的光学性能。与传统单一介质层膜层结构的可钢化双银Low-E(Low-Emissivity,低辐射玻璃)相比,采用双复合介质层膜层结构的可钢化双银Low-E产品能够自由调节各层的吸收强度,而这些不同区域的吸收对应不同的光谱波段。根据Low-E所要求的外观颜色的不同,可灵活调整得到所期望的光谱形态,在保证玻璃的外观颜色为市场主流外观颜色的情况下,可获得更好的可见光透过颜色。具体地,传统单一介质层的可钢双银结构、且膜厚依次为:玻璃基底(6mm)/Si3N4(33.4nm)/ZnO(10.8nm)/Ag(3.3nm)/NiCr(1nm)/Si3N4(74.2nm)/NiCr(2.2nm)/Ag(21.5nm)/NiCr(0.8nm)/Si3N4(49.7nm)的双银玻璃,钢化处理后光学测试结果为:可见光透过率48.2%,透过色a*:-5.2,b*:0.6,玻面反射率23.1%,反射色a*:-1.9,b*:-14.9,室外观察呈现深蓝色,室内为黄绿色。而本实用新型实施例提供的一种双复合介质层的可钢双银的结构、且膜厚依次为:玻璃基底(6mm)/Si3N4(10nm)/NiCr(2nm)/Si3N4(37.3nm)/NiCr(0.8nm)/Ag(10nm)/NiCr(0.8nm)/Si3N4(88nm)/NiCr(2nm)/Ag(16.7nm)/NiCr(2nm)/Si3N4(15nm)/NiCr(2nm)/Si3N4(15nm)的双银玻璃,钢化处理后光学测试结果为:可见光透过率49%,透过色a*:-2.82,b*:-0.9,玻面反射率15.55%,反射色a*:-1.22,b*:-4.5,室外观察呈现灰色,室内观察呈现浅绿色。可见,无论室外观察还是室内观察,本实用新型实施例提供的双复合介质层膜层结构的可钢化双银Low-E的颜色都更加中性、自然、舒适。另外,第一功能层13及第二功能层17均为银层,能额外反射红外线热,阻止热量通过。再者,因为双银玻璃200生产时可只采用磁控反应溅射沉积法就能形成各层,因此可避免生产过程中多次进出镀膜设备,简化了生产工艺,从而还可降低生产成本,提高生产效率。In summary, all the film layers of the double silver glass 200 provided by the embodiment of the present invention can be made of solid materials, and a unique film structure of double composite dielectric layers is adopted to improve the optical performance of the double silver glass. Compared with the traditional toughened double-silver Low-E (Low-Emissivity, low-emissivity glass) with a single dielectric layer film structure, the toughened double-silver Low-E product with a double-composite dielectric layer film structure can freely adjust each layer The absorption intensity of these different regions corresponds to different spectral bands. According to the different appearance colors required by Low-E, it can be flexibly adjusted to obtain the desired spectral shape. When the appearance color of the glass is guaranteed to be the mainstream appearance color in the market, better visible light transmission color can be obtained. Specifically, the traditional single dielectric layer can be steel double-silver structure, and the film thickness is as follows: glass substrate (6mm)/Si 3 N 4 (33.4nm)/ZnO (10.8nm)/Ag (3.3nm)/NiCr (1nm )/Si 3 N 4 (74.2nm)/NiCr(2.2nm)/Ag(21.5nm)/NiCr(0.8nm)/Si 3 N 4 (49.7nm) double silver glass, the optical test results after tempering are: Visible light transmittance is 48.2%, transmittance color a*: -5.2, b*: 0.6, glass surface reflectance 23.1%, reflection color a*: -1.9, b*: -14.9, outdoor observation is dark blue, indoor is yellow-green. However, the embodiment of the utility model provides a double-composite dielectric layer with a steel-double-silver structure, and the film thickness is as follows: glass substrate (6mm)/Si 3 N 4 (10nm)/NiCr (2nm)/Si 3 N 4 (37.3nm)/NiCr(0.8nm)/Ag(10nm)/NiCr(0.8nm)/Si 3 N 4 (88nm)/NiCr(2nm)/Ag(16.7nm)/NiCr(2nm)/Si 3 N 4 (15nm)/NiCr(2nm)/Si 3 N 4 (15nm) double silver glass, the optical test results after tempering treatment are: visible light transmittance 49%, transmission color a*:-2.82, b*:- 0.9, the reflectance of the glass surface is 15.55%, the reflection color a*:-1.22, b*:-4.5, the outdoor observation is gray, and the indoor observation is light green. It can be seen that, regardless of outdoor observation or indoor observation, the color of the temperable double-silver Low-E with double-composite dielectric layer film structure provided by the embodiment of the present invention is more neutral, natural and comfortable. In addition, both the first functional layer 13 and the second functional layer 17 are silver layers, which can additionally reflect infrared heat and prevent heat from passing through. Furthermore, because the double-silver glass 200 can be produced by only using the magnetron reactive sputtering deposition method to form each layer, it can avoid multiple entry and exit of the coating equipment during the production process, simplify the production process, and thereby reduce production costs. Increase productivity.

此外,本实用新型另一实施例还提供一种双银玻璃的制备方法以制备上述双银玻璃200。首先提供玻璃基底10。通常玻璃基底10需要清洗干净、干燥,然后传送至真空腔室镀膜区域。接着,通过磁控溅射镀膜的方式依次在玻璃基底10上沉积第一复合介质层11、第一种子层12、第一功能层13、第一保护层14、第二介质层15、第二种子层16、第二功能层17、第二保护层18以及第三复合介质层19。各层均是在室温下进行磁控溅射镀膜沉积形成的,但在沉积完各层后需对形成有各层的玻璃基底10进行后处理。后处理的方式例如包括对形成有各层的玻璃基底10进行钢化处理,其中钢化处理的温度为650~700℃,时间约1~10分钟;或者包括对形成有各层的玻璃基底10进行退火处理,其中,退火的温度为400~650℃,退火时间为20分钟至2小时。下面通过两个具体实施例详细说明双银玻璃200的制备过程。In addition, another embodiment of the present invention also provides a method for preparing double-silver glass to prepare the above-mentioned double-silver glass 200 . First, a glass substrate 10 is provided. Generally, the glass substrate 10 needs to be cleaned, dried, and then transferred to the coating area of the vacuum chamber. Next, the first composite dielectric layer 11, the first seed layer 12, the first functional layer 13, the first protective layer 14, the second dielectric layer 15, the second The seed layer 16 , the second functional layer 17 , the second protection layer 18 and the third composite dielectric layer 19 . Each layer is formed by magnetron sputtering coating deposition at room temperature, but after the deposition of each layer, the glass substrate 10 formed with each layer needs to be post-treated. The post-processing method includes, for example, tempering the glass substrate 10 formed with various layers, wherein the temperature of the tempering treatment is 650-700° C. for about 1-10 minutes; or it includes annealing the glass substrate 10 formed with various layers. treatment, wherein the annealing temperature is 400-650° C., and the annealing time is 20 minutes to 2 hours. The preparation process of the double-silver glass 200 will be described in detail below through two specific examples.

具体实施例1Specific embodiment 1

一种双银玻璃,其膜层结构由玻璃基底向外依次是:Si3N4(10nm)/NiCr(2nm)/Si3N4(37.3nm)/NiCr(0.8nm)/Ag(10nm)/NiCr(0.8nm)/Si3N4(88nm)/NiCr(2nm)/Ag(16.7nm)/NiCr(2nm)/Si3N4(15nm)/NiCr(2nm)/Si3N4(15nm)。A kind of double silver glass, its film layer structure from the glass substrate to the outside is: Si 3 N 4 (10nm)/NiCr(2nm)/Si 3 N 4 (37.3nm)/NiCr(0.8nm)/Ag(10nm) /NiCr(0.8nm)/Si 3 N 4 (88nm)/NiCr(2nm)/Ag(16.7nm)/NiCr(2nm)/Si 3 N 4 (15nm)/NiCr(2nm)/Si 3 N 4 (15nm ).

制备这种双银玻璃的方法依次是:The method for preparing this double-silver glass is as follows:

(1)玻璃基底清洗干净并吹干,置于真空溅射区;(1) The glass substrate is cleaned and dried, and placed in a vacuum sputtering area;

(2)在玻璃基底上采用磁控溅射的方式沉积Si3N4层,所用靶材为SiAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氮气的混合气体,在室温下沉积;(2) Deposit the Si 3 N 4 layer on the glass substrate by means of magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(3)在Si3N4层上面采用磁控溅射的方式沉积NiCr层,所用靶材为金属NiCr平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(3) The NiCr layer is deposited on the Si 3 N 4 layer by magnetron sputtering. The target material used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition at room temperature;

(4)在NiCr层上采用磁控溅射的方式沉积Si3N4层,所用靶材为SiAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氮气的混合气体,在室温下沉积;(4) The Si 3 N 4 layer is deposited on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(5)在Si3N4层上面采用磁控溅射的方式沉积NiCr层,所用靶材为金属NiCr平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(5) The NiCr layer is deposited on the Si 3 N 4 layer by magnetron sputtering, the target used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition at room temperature;

(6)在NiCr层上面采用磁控溅射的方式沉积Ag层,所用靶材为Ag平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(6) Deposit the Ag layer on the NiCr layer by means of magnetron sputtering, the target used is an Ag planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, the process gas is pure argon, and it is deposited at room temperature ;

(7)在Ag层上面采用磁控溅射的方式沉积NiCr层,所用靶材为金属NiCr平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(7) The NiCr layer is deposited on the Ag layer by magnetron sputtering. The target used is a metal NiCr planar target. deposition;

(8)在NiCr层上采用磁控溅射的方式沉积Si3N4层,所用靶材为SiAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氮气的混合气体,在室温下沉积;(8) The Si 3 N 4 layer is deposited on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(9)在Si3N4层上面采用磁控溅射的方式沉积NiCr层,所用靶材为金属NiCr平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(9) The NiCr layer is deposited on the Si 3 N 4 layer by magnetron sputtering, the target used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition at room temperature;

(10)在NiCr层上面采用磁控溅射的方式沉积Ag层,所用靶材为Ag平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(10) The Ag layer is deposited on the NiCr layer by magnetron sputtering, the target used is an Ag planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, the process gas is pure argon, and it is deposited at room temperature ;

(11)在Ag层上面采用磁控溅射的方式沉积NiCr层,所用靶材为金属NiCr平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(11) The NiCr layer is deposited on the Ag layer by magnetron sputtering, the target used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition;

(12)在NiCr层上采用磁控溅射的方式沉积Si3N4层,所用靶材为SiAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氮气的混合气体,在室温下沉积。(12) Deposit the Si 3 N 4 layer on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature.

(13)在Ag层上面采用磁控溅射的方式沉积NiCr层,所用靶材为金属NiCr平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(13) The NiCr layer is deposited on the Ag layer by magnetron sputtering, the target used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition;

(14)在NiCr层上采用磁控溅射的方式沉积Si3N4层,所用靶材为SiAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氮气的混合气体,在室温下沉积。(14) Deposit the Si 3 N 4 layer on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature.

具体实施例2Specific embodiment 2

一种双银玻璃,其膜层结构由玻璃基底向外依次是:Si3N4(27.4nm)/NiCr(1nm)/Si3N4(10nm)/ZnAlOx(8.1nm)/Ag(10nm)/NiCr(1nm)/Si3N4(71.1nm)/ZnAlOx(8nm)/Ag(15nm)/NiCr(1nm)/AZO(10nm)/Si3N4(10nm)/NiCr(1nm)/Si3N4(23nm)。A kind of double silver glass, its film layer structure from the glass substrate to the outside is: Si 3 N 4 (27.4nm)/NiCr(1nm)/Si 3 N 4 (10nm)/ZnAlO x (8.1nm)/Ag(10nm )/NiCr(1nm)/Si 3 N 4 (71.1nm)/ZnAlO x (8nm)/Ag(15nm)/NiCr(1nm)/AZO(10nm)/Si 3 N 4 (10nm)/NiCr(1nm)/ Si3N4 ( 23nm ).

制备这种双银玻璃的方法依次是:The method for preparing this double-silver glass is as follows:

(1)玻璃基底清洗干净并吹干,置于真空溅射区;(1) The glass substrate is cleaned and dried, and placed in a vacuum sputtering area;

(2)在玻璃基底上采用磁控溅射的方式沉积Si3N4层,所用靶材为SiAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氮气的混合气体,在室温下沉积;(2) Deposit the Si 3 N 4 layer on the glass substrate by means of magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(3)在Si3N4层上面采用磁控溅射的方式沉积NiCr层,所用靶材为金属NiCr平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(3) The NiCr layer is deposited on the Si 3 N 4 layer by magnetron sputtering. The target material used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition at room temperature;

(4)在NiCr层上采用磁控溅射的方式沉积Si3N4层,所用靶材为SiAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氮气的混合气体,在室温下沉积;(4) The Si 3 N 4 layer is deposited on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(5)在Si3N4层上面采用磁控溅射的方式沉积ZnAlOx层,所用靶材为ZnAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氧气的混合气体,在室温下沉积;(5) Deposit the ZnAlO x layer on the Si 3 N 4 layer by magnetron sputtering, the target used is a ZnAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixture of argon and oxygen gas, deposited at room temperature;

(6)在ZnAlOx层上面采用磁控溅射的方式沉积Ag层,所用靶材为Ag平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积。(6) The Ag layer is deposited by magnetron sputtering on the ZnAlO x layer. The target used is an Ag planar target. deposition.

(7)在Ag层上面采用磁控溅射的方式沉积NiCr层,所用靶材为金属NiCr平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(7) The NiCr layer is deposited on the Ag layer by magnetron sputtering. The target used is a metal NiCr planar target. deposition;

(8)在NiCr层上采用磁控溅射的方式沉积Si3N4层,所用靶材为SiAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氮气的混合气体,在室温下沉积;(8) The Si 3 N 4 layer is deposited on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(9)在Si3N4层上面采用磁控溅射的方式沉积ZnAlOx层,所用靶材为ZnAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氧气的混合气体,在室温下沉积;(9) Deposit the ZnAlO x layer on the Si 3 N 4 layer by magnetron sputtering, the target used is a ZnAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixture of argon and oxygen gas, deposited at room temperature;

(10)在ZnAlOx层上面采用磁控溅射的方式沉积Ag层,所用靶材为Ag平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积。(10) The Ag layer is deposited on the ZnAlO x layer by magnetron sputtering. The target used is an Ag planar target, the power supply is a DC plus pulse power supply, and the power is 1-10KW. deposition.

(11)在Ag层上面采用磁控溅射的方式沉积NiCr层,所用靶材为金属NiCr平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(11) The NiCr layer is deposited on the Ag layer by magnetron sputtering, the target used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition;

(12)在NiCr层上面采用磁控溅射的方式沉积AZO层,所用靶材为陶瓷AZO旋转靶,电源为中频电源,功率为10~100KW,工艺气体为纯氩气或者氩气和氧气的混合气体,在室温下沉积。(12) The AZO layer is deposited on the NiCr layer by magnetron sputtering, the target used is a ceramic AZO rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is pure argon or argon and oxygen. Mixed gas, deposited at room temperature.

(13)在AZO层上采用磁控溅射的方式沉积Si3N4层,所用靶材为SiAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氮气的混合气体,在室温下沉积。(13) Deposit the Si 3 N 4 layer on the AZO layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature.

(14)在Si3N4层上面采用磁控溅射的方式沉积NiCr层,所用靶材为金属NiCr平面靶,电源为直流加脉冲电源,功率为1~10KW,工艺气体为纯氩气,在室温下沉积;(14) The NiCr layer is deposited on the Si 3 N 4 layer by magnetron sputtering, the target used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition at room temperature;

(15)在NiCr层上采用磁控溅射的方式沉积Si3N4层,所用靶材为SiAl旋转靶,电源为中频电源,功率为10~100KW,工艺气体为氩气和氮气的混合气体,在室温下沉积。(15) Deposit the Si 3 N 4 layer on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature.

(16)将制成的玻璃进行钢化处理。(16) Tempering the finished glass.

最后应说明的是:以上实施例仅用以说明本实用新型的技术方案,而非对其限制;尽管参照前述实施例对本实用新型进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本实用新型各实施例技术方案的精神和范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present utility model, and are not intended to limit it; although the utility model has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit of the technical solutions of the various embodiments of the present invention. and range.

Claims (9)

1.一种双银玻璃,包括玻璃基底,其特征在于,所述双银玻璃还包括依次位于所述玻璃基底上的第一复合介质层、第一种子层、第一功能层、第一保护层、第二介质层、第二种子层、第二功能层、第二保护层、第三复合介质层,其中,所述第一复合介质层包括的第一下子介质层、第一中间层、第一上子介质层,所述第一下子介质层与所述玻璃基底相邻,所述第一上子介质层与所述第一种子层相邻,所述第一中间层位于所述第一下子介质层与所述第一上子介质层之间,所述第三复合介质层包括的第三下子介质层、第三中间层、第三上子介质层,所述第三下子介质层与所述第二保护层相邻,所述第三中间层位于所述第三下子介质层与所述第三上子介质层之间,且所述第一中间层和所述第三中间层包含金属层。1. A double-silver glass, comprising a glass substrate, characterized in that, said double-silver glass also comprises a first composite medium layer, a first seed layer, a first functional layer, and a first protection layer positioned on the glass substrate in turn. layer, the second dielectric layer, the second seed layer, the second functional layer, the second protective layer, and the third composite dielectric layer, wherein the first composite dielectric layer includes the first lower dielectric layer, the first intermediate layer , a first upper sub-dielectric layer, the first lower sub-dielectric layer is adjacent to the glass substrate, the first upper sub-dielectric layer is adjacent to the first seed layer, and the first intermediate layer is located at the Between the first lower sub-dielectric layer and the first upper sub-dielectric layer, the third composite dielectric layer includes a third lower sub-dielectric layer, a third middle layer, a third upper sub-dielectric layer, and the third The lower sub-dielectric layer is adjacent to the second protection layer, the third intermediate layer is located between the third lower sub-dielectric layer and the third upper sub-dielectric layer, and the first intermediate layer and the third The three intermediate layers contain metal layers. 2.如权利要求1所述的双银玻璃,其特征在于,所述金属层包含铌、铁、钽、镍、铬或锆的单质或合金。2. The double-silver glass according to claim 1, wherein the metal layer comprises a single substance or an alloy of niobium, iron, tantalum, nickel, chromium or zirconium. 3.如权利要求1所述的双银玻璃,其特征在于,所述第一下子介质层、所述第一上子介质层、所述第三下子介质层以及所述第三上子介质层分别包含金属或非金属的氧化物或氮化物。3. The double-silver glass according to claim 1, wherein the first lower dielectric layer, the first upper dielectric layer, the third lower dielectric layer, and the third upper dielectric layer The layers comprise oxides or nitrides of metals or metalloids, respectively. 4.如权利要求3所述的双银玻璃,其特征在于,所述第一下子介质层、所述第一上子介质层、所述第三下子介质层以及所述第三上子介质层分别包含氮化硅、锌锡氧化物、锌铝氧化物、氧化硅、氧化钛或氧化铌。4. The double-silver glass according to claim 3, characterized in that, the first lower sub-dielectric layer, the first upper sub-dielectric layer, the third lower sub-dielectric layer and the third upper sub-dielectric layer The layers each contain silicon nitride, zinc tin oxide, zinc aluminum oxide, silicon oxide, titanium oxide or niobium oxide. 5.如权利要求1所述的双银玻璃,其特征在于,所述第一保护层和所述第二保护层分别包含镍铬合金或镍铬氧化物,所述第一种子层和所述第二种子层分别包含氧化锌、锌铝氧化物或锌锡氧化物。5. double silver glass as claimed in claim 1, is characterized in that, described first protection layer and described second protection layer comprise nickel-chromium alloy or nickel-chromium oxide respectively, and described first seed layer and described The second seed layer contains zinc oxide, zinc aluminum oxide or zinc tin oxide, respectively. 6.如权利要求1所述的双银玻璃,其特征在于,所述双银玻璃还包括位于所述第一保护层与所述第二介质层之间的第一热稳介质层和/或位于所述第二保护层与所述第三复合介质层之间的第二热稳介质层。6. The double-silver glass according to claim 1, characterized in that, the double-silver glass further comprises a first thermally stable medium layer and/or a layer between the first protective layer and the second medium layer A second thermally stable dielectric layer located between the second protective layer and the third composite dielectric layer. 7.如权利要求1所述的双银玻璃,其特征在于,所述第一下子介质层和所述第一上子介质层的厚度分别为0~80nm,所述第三下子介质层和所述第三上子介质层的厚度分别为0~100nm。7. The double-silver glass according to claim 1, wherein the thicknesses of the first lower sub-dielectric layer and the first upper sub-dielectric layer are respectively 0 to 80 nm, and the third lower sub-dielectric layer and The thicknesses of the third upper sub-dielectric layers are respectively 0-100 nm. 8.如权利要求1所述的双银玻璃,其特征在于,所述第一种子层、所述第一保护层、所述第二种子层或所述第二保护层的厚度为0~20nm。8. The double-silver glass according to claim 1, wherein the thickness of the first seed layer, the first protective layer, the second seed layer or the second protective layer is 0-20nm . 9.如权利要求1所述的双银玻璃,其特征在于,所述第一功能层和所述第二功能层分别包含银或铜银合金,所述第一功能层和所述第二功能层的厚度分别为0~40nm。9. double silver glass as claimed in claim 1, is characterized in that, described first functional layer and described second functional layer comprise silver or copper-silver alloy respectively, and described first functional layer and described second functional layer The thicknesses of the layers are 0 to 40 nm, respectively.
CN201821822440.5U 2018-11-06 2018-11-06 double silver glass Active CN209242941U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111138087A (en) * 2018-11-06 2020-05-12 中国南玻集团股份有限公司 Double silver glass
CN112777945A (en) * 2019-11-07 2021-05-11 中国南玻集团股份有限公司 Three-silver glass
CN112777946A (en) * 2019-11-07 2021-05-11 中国南玻集团股份有限公司 Three-silver glass

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111138087A (en) * 2018-11-06 2020-05-12 中国南玻集团股份有限公司 Double silver glass
CN112777945A (en) * 2019-11-07 2021-05-11 中国南玻集团股份有限公司 Three-silver glass
CN112777946A (en) * 2019-11-07 2021-05-11 中国南玻集团股份有限公司 Three-silver glass

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