CN209242940U - double silver glass - Google Patents

Abstract

The embodiment of the utility model discloses a double-silver glass, which comprises a glass substrate and a first composite dielectric layer, a first seed layer, a first functional layer, a first protective layer, a second composite dielectric layer, The second seed layer, the second functional layer, the second protective layer, and the third dielectric layer, wherein the first composite dielectric layer includes the first lower dielectric layer, the first middle layer, the first upper dielectric layer, the first The lower sub-dielectric layer is adjacent to the glass substrate, the first upper sub-dielectric layer is adjacent to the first seed layer, the first middle layer is located between the first lower sub-dielectric layer and the first upper sub-dielectric layer, and the second composite dielectric layer It includes a second lower sub-dielectric layer, a second middle layer, and a second upper sub-dielectric layer, the second lower sub-dielectric layer is adjacent to the first protective layer, the second upper sub-dielectric layer is adjacent to the second seed layer, and the second middle The layer is located between the second lower sub-dielectric layer and the second upper sub-dielectric layer, and the first middle layer and the second middle layer include a metal layer. The double silver glass can improve its optical performance after tempering.

Description

double silver glass

technical field

The utility model relates to an energy-saving glass, in particular to a double-silver glass.

Background technique

With the implementation of national energy conservation and emission reduction policies and people's awareness of low-carbon environmental protection, energy-saving glass represented by low-emissivity glass is more and more widely used in doors, windows and glass curtain walls. In the low-e glass family, double-silver low-e glass with excellent energy-saving performance has been widely used. However, the optical performance of the existing double-silver low-emissivity glass still has certain deficiencies, so its optical performance needs to be further improved to meet higher requirements.

Utility model content

In view of the above problems, the embodiment of the present invention provides a double-silver glass, which can improve the optical performance of the tempered glass.

The embodiment of the utility model provides a double-silver glass, which includes a glass substrate. The double-silver glass also includes a first composite dielectric layer, a first seed layer, a first functional layer, and a first protection layer sequentially located on the glass substrate. layer, the second composite dielectric layer, the second seed layer, the second functional layer, the second protective layer, and the third dielectric layer, wherein, the first composite dielectric layer includes the first lower dielectric layer, the first intermediate layer , a first upper sub-dielectric layer, the first lower sub-dielectric layer is adjacent to the glass substrate, the first upper sub-dielectric layer is adjacent to the first seed layer, and the first intermediate layer is located at the Between the first lower sub-dielectric layer and the first upper sub-dielectric layer, the second composite dielectric layer includes a second lower sub-dielectric layer, a second middle layer, a second upper sub-dielectric layer, and the second The lower sub-dielectric layer is adjacent to the first protective layer, the second upper sub-dielectric layer is adjacent to the second seed layer, and the second intermediate layer is located between the second lower sub-dielectric layer and the second between the upper sub-dielectric layers, and the first intermediate layer and the second intermediate layer include a metal layer.

In one embodiment of the present utility model, the metal layer contains a single substance or an alloy of niobium, iron, tantalum, nickel, chromium or zirconium.

In one embodiment of the present invention, the first lower dielectric layer, the first upper dielectric layer, the second lower dielectric layer and the second upper dielectric layer respectively contain metal or non-metal oxides or nitrides.

In one embodiment of the present invention, the first lower sub-dielectric layer, the first upper sub-dielectric layer, the second lower sub-dielectric layer and the second upper sub-dielectric layer respectively comprise silicon nitride, Zinc tin oxide, zinc aluminum oxide, silicon oxide, titanium oxide or niobium oxide.

In one embodiment of the present invention, the first protective layer and the second protective layer respectively contain nickel-chromium alloy or nickel-chromium oxide, and the first seed layer and the second seed layer respectively contain oxide Zinc, zinc aluminum oxide or zinc tin oxide.

In one embodiment of the present invention, the double-silver glass further includes a first heat-stable dielectric layer located between the first protective layer and the second composite dielectric layer and/or located between the second protective layer layer and the second thermally stable dielectric layer between the third dielectric layer.

In one embodiment of the present invention, the thickness of the first lower sub-dielectric layer and/or the first upper sub-dielectric layer is 0-80 nm, and the second lower sub-dielectric layer and/or the second The thickness of the upper sub-dielectric layer is 0-100nm.

In one embodiment of the present invention, the thickness of the first seed layer, the first protective layer, the second seed layer or the second protective layer is 0-20 nm.

In one embodiment of the present utility model, the first functional layer and the second functional layer respectively contain silver or copper-silver alloy, and the thicknesses of the first functional layer and the second functional layer are respectively 0 to 40nm.

The above-mentioned technical solution can have the following advantages: the double-silver glass provided by the embodiment of the utility model adopts a unique double-composite dielectric layer film structure, which can adjust the absorption intensity of each layer corresponding to different spectral bands, and improve the tempered double-silver glass. optical properties.

Description of drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention , for those skilled in the art, other drawings can also be obtained according to these drawings on the premise of not paying creative work.

Fig. 1 is the structural representation of a kind of double silver glass that the utility model embodiment provides;

Fig. 2 is a further structural schematic diagram of the double silver glass in Fig. 1 .

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. example. Based on the embodiments of the present utility model, all other embodiments obtained by persons of ordinary skill in the art without creative efforts belong to the protection scope of the present utility model.

As shown in FIG. 1 , an embodiment of the present invention provides a double-silver glass 200, which includes a glass substrate 10 and a first composite dielectric layer 11, a first seed layer 12, and a first functional layer sequentially formed on the glass substrate 10. 13. The first protective layer 14 , the second composite dielectric layer 15 , the second seed layer 16 , the second functional layer 17 , the second protective layer 18 and the third dielectric layer 19 . The first composite dielectric layer 11, the first seed layer 12, the first functional layer 13, the first protective layer 14, the second composite dielectric layer 15, the second seed layer 16, the second functional layer 17, the second protective layer 18 and The third medium layer 19 can be made of solid material.

Wherein, the glass substrate 10 can be ordinary glass, colored glass or ultra clear glass, and its thickness can be 3-10 millimeters (mm), preferably 6 mm.

The first composite dielectric layer 11 includes, for example, a first lower sub-dielectric layer 111 , a first middle layer 112 and a first upper sub-dielectric layer 113 . The first lower sub-dielectric layer 111 is adjacent to the glass substrate 10, the first upper sub-dielectric layer 113 is adjacent to the first seed layer 12, and the first intermediate layer 112 is located between the first lower sub-dielectric layer 111 and the first upper sub-dielectric layer. Between 113. The second composite dielectric layer 15 includes, for example, a second lower sub-dielectric layer 151 , a second middle layer 152 and a second upper sub-dielectric layer 153 . The second lower sub-dielectric layer 151 is adjacent to the first protective layer 14, the second upper sub-dielectric layer 153 is adjacent to the second seed layer 16, and the second intermediate layer 152 is located between the second lower sub-dielectric layer 151 and the second upper sub-dielectric layer. Between 153.

The first lower sub-dielectric layer 111, the first upper sub-dielectric layer 113, the second lower sub-dielectric layer 151 and the second upper sub-dielectric layer 153, for example, respectively contain metal or non-metallic oxides and nitrides, such as silicon nitride (Si ₃ N ₄ ), zinc tin oxide (ZnSnO _x ), zinc aluminum oxide (AZO), silicon oxide (SiO ₂ ), titanium oxide (TiO ₂ ) or niobium oxide (Nb ₂ O ₅ ), etc. The thicknesses of the first lower sub-dielectric layer 111 and the first upper sub-dielectric layer 113 are 0-80 nm respectively, and the thicknesses of the second lower sub-dielectric layer 151 and the second upper sub-dielectric layer 153 are 0-100 nm respectively. The first intermediate layer 112 and the second intermediate layer 152 are respectively metal layers. Specifically, the first intermediate layer 112 and the second intermediate layer 152 respectively contain, for example, a single substance or an alloy of niobium, iron, tantalum, nickel, chromium or zirconium such as nickel-chromium alloy (NiCr). The thicknesses of the first intermediate layer 112 and the second intermediate layer 152 are respectively 0-30 nm. In this way, the toughened double-silver Low-E product with double-composite dielectric layer film structure can freely adjust the absorption intensity of each layer to improve the optical performance of double-silver glass.

In addition, the first seed layer 12, the first protective layer 14, the second seed layer 16 and the second protective layer 18 contain, for example, metals, metal alloys or metal alloy oxides, such as nickel-chromium alloys (NiCr) or nickel-chromium oxides, respectively. (NiCrO _x ) and so on. Further, the first seed layer 12 and the second seed layer 16 respectively include zinc oxide (ZnO or ZnAlO _x ), zinc aluminum oxide (AZO) or zinc tin oxide (ZnSnO _x ), for example. The thicknesses of the first seed layer 12 , the first protection layer 14 , the second seed layer 16 and the second protection layer 18 are 0-20 nm, respectively.

The first functional layer 13 and the second functional layer 17 contain, for example, silver (Ag) or a copper-silver (AgCu) alloy. The thicknesses of the first functional layer 13 and the second functional layer 17 are respectively 0-40 nm.

The third dielectric layer 19 includes, for example, metal or non-metal oxides or nitrides, such as silicon nitride (Si ₃ N ₄ ), zinc tin oxide (ZnSnO _x ), zinc aluminum oxide (AZO), silicon oxide (SiO ₂ ), titanium oxide (TiO ₂ ) or niobium oxide (Nb ₂ O ₅ ), etc. The thickness of the third dielectric layer 19 is 0-100 nm.

In addition, as shown in FIG. 2 , the double-silver glass 200 also includes, for example, a first thermally stable dielectric layer 21 located between the first protective layer 14 and the second lower sub-dielectric layer 151 of the second composite dielectric layer 15 and/or located at the second The second thermally stable dielectric layer 22 between the second protection layer 18 and the third dielectric layer 19 . The first thermally stable dielectric layer 21 and the second thermally stable dielectric layer 22 can improve the thermal stability of the double silver glass 200 . Specifically, the first thermally stable dielectric layer 21 and/or the second thermally stable dielectric layer 22 are obtained by sputtering a metal oxide ceramic target, such as zinc aluminum oxide (AZO, ZnAlOx), zinc tin oxide (ZnSnOx), oxide Titanium (TiOx). During the tempering process, the thermally stable medium layer is beneficial to improve the thermal stability of the Low-E film layer and the product, so that the product film layer can better withstand the test of tempering without being damaged. In addition, the use of thermally stable dielectric layer can not only improve the thermal stability of the product, but also improve the optical performance of the product. Furthermore, since oxygen is an important factor affecting the thermal stability of the product, during the film preparation process, the thermally stable dielectric layer is sputtered with a metal oxide ceramic target without adding oxygen or adding less oxygen, which can reduce the flow of oxygen to the adjacent Diffusion of the target site to improve the thermal stability of the product. Usually, the thicknesses of the first thermally stable dielectric layer 21 and the second thermally stable dielectric layer 22 are respectively 0-50 nm.

In summary, all the film layers of the double silver glass 200 provided by the embodiment of the present invention can be made of solid materials, and a unique film structure of double composite dielectric layers is adopted to improve the optical performance of the double silver glass. Compared with the traditional toughened double-silver Low-E (Low-Emissivity, low-emissivity glass) with a single dielectric layer film structure, the toughened double-silver Low-E product with a double-composite dielectric layer film structure can freely adjust each layer The absorption intensity of these different regions corresponds to different spectral bands. According to the different appearance colors required by Low-E, it can be flexibly adjusted to obtain the desired spectral shape. When the appearance color of the glass is guaranteed to be the mainstream appearance color in the market, better visible light transmission color can be obtained. Specifically, the traditional single dielectric layer can be steel double silver structure, and the film thickness is as follows: glass substrate (6mm)/Si ₃ N ₄ (33.4nm)/ZnO(10.8nm)/Ag(3.3nm)/NiCr(1nm )/Si ₃ N ₄ (74.2nm)/NiCr(2.2nm)/Ag(21.5nm)/NiCr(0.8nm)/Si ₃ N ₄ (49.7nm) double silver glass, the optical test results after tempering are: Visible light transmittance is 48.2%, transmittance color a*: -5.2, b*: 0.6, glass surface reflectance 23.1%, reflection color a*: -1.9, b*: -14.9, outdoor observation is dark blue, indoor is yellow-green. However, the embodiment of the utility model provides a double-composite dielectric layer with a steel-double-silver structure, and the film thickness is as follows: glass substrate (6mm)/Si ₃ N ₄ (13.2nm)/NiCr (1.8nm)/Si ₃ N ₄ (27.2nm)/NiCr(0.7nm)/Ag(15.9nm)/NiCr(0.7nm)/Si ₃ N ₄ (31.3nm)/NiCr(1.5nm)/Si ₃ N ₄ (49.8nm)/ NiCr(0.8nm)/Ag(14.4nm)/NiCr(0.7nm)/Si ₃ N ₄ (35.1nm) double-silver glass, the optical test results after tempering treatment are: the visible light transmittance is 48.7%, and the transmission color is a *: -2.02, b*: -1.17, reflectance of glass surface is 12%, reflection color a*: -1.7, b*: -4.8, light blue-gray in outdoor observation, and light blue-green in indoor observation. It can be seen that no matter the color is observed outdoors or indoors, the temperable double-silver Low-E with double-composite dielectric layer film structure provided by the embodiment of the utility model is more neutral, natural, comfortable and has better performance. In addition, both the first functional layer 13 and the second functional layer 17 are silver layers, which can additionally reflect infrared heat and prevent heat from passing through. Furthermore, because the double-silver glass 200 can be produced by only using the magnetron reactive sputtering deposition method to form each layer, it can avoid multiple entry and exit of the coating equipment during the production process, simplify the production process, and thereby reduce production costs. Increase productivity.

In addition, another embodiment of the present invention also provides a method for preparing double-silver glass to prepare the above-mentioned double-silver glass 200 . First, a glass substrate 10 is provided. Generally, the glass substrate 10 needs to be cleaned, dried, and then transferred to the coating area of the vacuum chamber. Next, the first composite dielectric layer 11, the first seed layer 12, the first functional layer 13, the first protective layer 14, the second composite dielectric layer 15, the Two sublayers 16 , a second functional layer 17 , a second protective layer 18 and a third dielectric layer 19 . Each layer is formed by magnetron sputtering coating deposition at room temperature, but after the deposition of each layer, the glass substrate 10 on which each layer is formed needs to be post-treated. The post-treatment method may include tempering the glass substrate 10 formed with various layers, wherein the temperature of the tempering treatment is 650-700° C. for about 1-10 minutes; or it may include annealing the glass substrate 10 formed with various layers. treatment, wherein the annealing temperature is 400-650° C., and the annealing time is 20 minutes to 2 hours. The preparation process of the double-silver glass 200 will be described in detail below through two specific examples.

Specific embodiment 1

A kind of double silver glass, its film layer structure from the glass substrate to the outside is: Si ₃ N ₄ (16nm)/NiCr(1.5nm)/Si ₃ N ₄ (16nm)/AZO(15nm)/AgCu(12nm)/ NiCr(10nm)/Si3N4 _{( 16nm} )/NiCr( _1.5nm )/Si3N4 ₍ 16nm)/AZO(15nm)/AgCu(15nm)/NiCr(10nm)/ _{Si3N4 (} 20nm).

The method for preparing this double-silver glass is as follows:

(1) The glass substrate is cleaned and dried, and placed in a vacuum sputtering area;

(2) Deposit the Si ₃ N ₄ layer on the glass substrate by means of magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(3) The NiCr layer is deposited on the Si ₃ N ₄ layer by magnetron sputtering. The target material used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition at room temperature;

(4) The Si ₃ N ₄ layer is deposited on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(5) Deposit the AZO layer on the Si ₃ N ₄ layer by means of magnetron sputtering, the target used is a ceramic AZO rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is pure argon or argon Mixed gas with oxygen, deposited at room temperature;

(6) Deposit the AgCu layer on the AZO layer by means of magnetron sputtering, the target used is an AgCu planar target, the power supply is a DC plus pulse power supply, the power is 1-10KW, the process gas is pure argon, and it is deposited at room temperature ;

(7) The NiCr layer is deposited on the AgCu layer by magnetron sputtering. The target used is a metal NiCr planar target. deposition;

(8) The Si ₃ N ₄ layer is deposited on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(9) The NiCr layer is deposited on the Si ₃ N ₄ layer by magnetron sputtering, the target used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition at room temperature;

(10) Deposit the Si ₃ N ₄ layer on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(11) Deposit the AZO layer on the Si ₃ N ₄ layer by means of magnetron sputtering, the target used is a ceramic AZO rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is pure argon or argon Mixed gas with oxygen, deposited at room temperature;

(12) Deposit the AgCu layer on the AZO layer by means of magnetron sputtering, the target used is an AgCu planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, the process gas is pure argon, and it is deposited at room temperature ;

(13) The NiCr layer is deposited on the AgCu layer by magnetron sputtering. The target used is a metal NiCr planar target. deposition;

(14) Deposit the Si ₃ N ₄ layer on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature.

Specific embodiment 2

A kind of double silver glass, its film layer structure from the glass substrate to the outside is: Si ₃ N ₄ (30nm)/NiCr(1.5nm)/Si ₃ N ₄ (30nm)/AZO(14nm)/Ag(10nm)/ NiCr(1nm)/Si3N4 _{( 46nm} )/NiCr(1.5nm)/Si3N4 ₍ 46nm)/NiCr(1nm)/ _Ag (14nm)/NiCr(1nm)/Si3N4 _{( 46nm} ).

The method for preparing this double-silver glass is as follows:

(1) The glass substrate is cleaned and dried, and placed in a vacuum sputtering area;

(2) Deposit the Si ₃ N ₄ layer on the glass substrate by means of magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(3) The NiCr layer is deposited on the Si ₃ N ₄ layer by magnetron sputtering. The target material used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition at room temperature;

(4) The Si ₃ N ₄ layer is deposited on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(5) Deposit the AZO layer on the Si ₃ N ₄ layer by means of magnetron sputtering, the target used is a ceramic AZO rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is pure argon or argon Mixed gas with oxygen, deposited at room temperature.

(6) Deposit the Ag layer on the AZO layer by means of magnetron sputtering, the target used is an Ag planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, the process gas is pure argon, and it is deposited at room temperature .

(7) The NiCr layer is deposited on the Ag layer by magnetron sputtering. The target used is a metal NiCr planar target. deposition;

(8) The Si ₃ N ₄ layer is deposited on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(9) The NiCr layer is deposited on the Si ₃ N ₄ layer by magnetron sputtering, the target used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition at room temperature;

(10) Deposit the Si ₃ N ₄ layer on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature;

(11) The NiCr layer is deposited on the Si ₃ N ₄ layer by magnetron sputtering, the target used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition at room temperature;

(12) The Ag layer is deposited on the NiCr layer by magnetron sputtering, the target used is an Ag planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, the process gas is pure argon, and it is deposited at room temperature .

(13) The NiCr layer is deposited on the Ag layer by magnetron sputtering, the target used is a metal NiCr planar target, the power supply is DC plus pulse power supply, the power is 1-10KW, and the process gas is pure argon. deposition;

(14) Deposit the Si ₃ N ₄ layer on the NiCr layer by magnetron sputtering, the target used is a SiAl rotating target, the power supply is an intermediate frequency power supply, the power is 10-100KW, and the process gas is a mixed gas of argon and nitrogen , deposited at room temperature.

(15) Tempering the finished glass.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present utility model, and are not intended to limit it; although the utility model has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit of the technical solutions of the various embodiments of the present invention. and range.

Claims (9)

1. a kind of double silver-colored glass, including substrate of glass, which is characterized in that double silver-colored glass further include being sequentially located at the glass The first compound medium layer, the first seed layer, the first functional layer, the first protective layer, the second compound medium layer, second in substrate Sublayer, the second functional layer, the second protective layer, third dielectric layer, wherein what first compound medium layer included is situated between quickly Matter layer, the first middle layer, sub- dielectric layer on first, described quickly dielectric layer it is adjacent with the substrate of glass, described first Upper sub- dielectric layer is adjacent with first seed layer, and first middle layer is located at the described the dielectric layer and described first quickly Between upper sub- dielectric layer, second compound medium layer include second under sub- dielectric layer, the second middle layer, sub- medium on second Layer, sub- dielectric layer is adjacent with first protective layer under described second, sub- dielectric layer and second of sublayer on described second Adjacent, second middle layer is located under described second on sub- dielectric layer and described second between sub- dielectric layer, and described the One middle layer and second middle layer include metal layer.

2. double silver-colored glass as described in claim 1, which is characterized in that the metal layer includes niobium, iron, tantalum, nickel, chromium or zirconium Simple substance or alloy.

3. glass as described in claim 1 double silver-colored, which is characterized in that described the quickly dielectric layer, son is situated between on described first Sub- dielectric layer separately includes metal or nonmetallic oxide or nitrogen on sub- dielectric layer and described second under matter layer, described second Compound.

4. glass as claimed in claim 3 double silver-colored, which is characterized in that described the quickly dielectric layer, son is situated between on described first Sub- dielectric layer separately includes silicon nitride, zinc tin oxide, zinc-aluminium oxygen on sub- dielectric layer and described second under matter layer, described second Compound, silica, titanium oxide or niobium oxide.

5. double silver-colored glass as described in claim 1, which is characterized in that first protective layer and second protective layer difference Comprising nichrome or nickel chromium triangle oxide, first seed layer and second of sublayer separately include zinc oxide, zinc-aluminium oxygen Compound or zinc tin oxide.

6. double silver-colored glass as described in claim 1, which is characterized in that double silver-colored glass further include being located at first protection The steady dielectric layer of the first heat between layer and second compound medium layer and/or it is located at second protective layer and the third is situated between The second steady dielectric layer of heat between matter layer.

7. glass as described in claim 1 double silver-colored, which is characterized in that described the quickly on dielectric layer and/or described first Sub- dielectric layer with a thickness of 0~80nm, under described second on sub- dielectric layer and/or described second sub- dielectric layer with a thickness of 0~ 100nm。

8. glass as described in claim 1 double silver-colored, which is characterized in that first seed layer, first protective layer, described Second of sublayer or second protective layer with a thickness of 0~20nm.

9. double silver-colored glass as described in claim 1, which is characterized in that first functional layer and second functional layer difference Comprising silver or Kufil, the thickness of first functional layer and second functional layer is respectively 0~40nm.