CN1576990A - Manufacturing method and structure of color filter film substrate - Google Patents

Abstract

A manufacturing approach and structure of the base plate of colored filter coating, the manufacturing approach of the base plate of colored filter coating, form the black matrix on the base plate first, later form the color photoresist layer on the base plate and cover the black matrix; arranging a photomask above the substrate to perform exposure process on the color photoresist layer, wherein the photomask is provided with a light-transmitting area, a partial light-transmitting area and a light-proof area, and the partial light-transmitting area is positioned between the light-transmitting area and the light-proof area and corresponds to the edge of the black matrix; then, a developing process is performed to pattern the color photoresist layer. By using the mask having a partially exposed area to perform the exposure process, the problem of color discontinuity at the edge of the black matrix caused by using black resin as the black matrix material in the prior art can be solved. The structure of the color filter film substrate comprises a substrate, a black matrix and a color light resistance layer; the black matrix is arranged on the substrate, the color photoresist layer covers the substrate, part of the color photoresist layer covers the edge of the black matrix, and the surface of the color photoresist layer is a flat surface. Because the color photoresist layer is a flat surface, the LCD will not have the problem of bad display effect.

Description

Manufacturing method and structure of color filter film substrate

technical field

The invention relates to a manufacturing method and structure of a color filter film substrate in the field of display devices, in particular to a manufacturing method and structure of a color filter film substrate using black resin as a black matrix material.

Background technique

With the development of high technology, video products, especially digital video or image devices have become common products in daily life. In these digital video or image devices, the display is an important component to display relevant information. Users can read information from the display, or further control the operation of the device.

In order to match the mode of modern life, the volume of video or image devices is becoming thinner and lighter. Although the existing traditional cathode-ray display still has its advantages, it needs to occupy a large volume and consumes power. Therefore, in combination with optoelectronic technology and semiconductor manufacturing technology, panel-type displays have been developed into common display products, such as LCD Monitor. Liquid crystal displays have the advantages that existing traditional cathode ray tubes (cathoderay tube, CRT for short) cannot achieve due to their low-voltage operation, no radiation scattering, light weight, and small size. Compared with other flat-panel displays such as plasma Displays and electroluminance (electroluminance) displays have become the main subject of display research in recent years, and are regarded as the mainstream of displays in the 21st century.

Taking a thin film transistor (TFT) liquid crystal display as an example, its liquid crystal panel is composed of a thin film transistor array substrate, a color filter array substrate and a liquid crystal layer, and the liquid crystal layer is located between the thin film transistor array substrate and the color filter array substrate. between array substrates. Wherein, the above-mentioned color filter array substrate is formed by, for example, first forming a black matrix (Black Matrix), then forming a color photoresist layer, and then forming film layers such as a protective layer or an electrode layer.

Since the material used to form the black matrix is usually chromium metal, and its thickness is about 0.2 microns, when the color photoresist layer is formed, there will be a slight The color gap difference (height difference) (as shown in Figure 1). Please refer to FIG. 1, which is a schematic cross-sectional view of a known color filter film substrate. After the black matrix 102 is formed, a layer of color photoresist layer will be formed on the substrate 100 (in the figure). not shown), and then the color photoresist layer 104 is defined by lithographic etching. Since the initial color photoresist layer (not shown in the figure) is fully covered on the substrate 100 by spin coating, there will be a slight color discontinuity near the black matrix 102 and the color photoresist layer 104 The difference h1 is about 0.2 microns in height, but the tiny color gap h1 will not affect the display of the display.

However, although the small color gap does not affect the color rendering of the display, the use of chrome metal as the black matrix will cause environmental pollution and other environmental problems. Therefore, based on environmental considerations, the material of the black matrix can be replaced by black resin. Original chrome metal. Yet, utilize black resin to solve environmental protection problem, because the method for forming black resin is to carry out by the mode of spin coating, so the thickness of formed black resin can be thicker than original chromium layer (about 1.0-1.2 micron) ), so the height h2 of the color gap above the edge of the black matrix made of black resin will change from the original 0.2 microns to 0.5-0.8 microns (as shown in Figure 2), please refer to Figure 2, which is the existing A cross-sectional schematic diagram of another known color filter film substrate, and the above-mentioned color gap difference will affect the effect of liquid crystal deflection, so that light tends to produce unexpected deflection, and different colors (R, G , B) The color gap difference h2 produced by the color photoresist layer may also be different, which will cause problems such as poor display effect of the display

The above-mentioned problem of discontinuity of color can be solved by grinding, but this requires an additional grinding process, resulting in a decrease in product yield, so in the long run, this is not a fundamental solution.

It can be seen that there are still many defects in the above-mentioned existing manufacturing method and structure of the color filter film substrate, and further improvement is urgently needed.

In order to solve the defects of the manufacturing method and structure of the existing color filter film substrates, relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time. The problem to be solved.

In view of the above-mentioned existing defects in the manufacturing method and structure of the color filter film substrate, the inventor actively researches and innovates based on years of rich practical experience and professional knowledge engaged in the design and manufacture of such products, in order to create a new The manufacturing method and structure of the color filter film substrate can improve the existing manufacturing method and structure, making it more practical. Through continuous research, design and after repeated trial making of samples and improvements, the present invention with real practical value is finally created.

Contents of the invention

The main purpose of the present invention is to overcome the above-mentioned existing defects in the manufacturing method of the color filter film substrate and its structure, and provide a new method of manufacturing the color filter film substrate and its structure, the main technology to be solved The problem is to make it possible to solve the problem of color discontinuity at the edge of the black matrix when black resin is used as the material of the black matrix, so that it is more practical and has industrial utilization value.

The purpose of the present invention and the solution to its main technical problems are achieved by adopting the following technical solutions. According to a method for manufacturing a color filter film substrate proposed by the present invention, the method includes the following steps: forming a black matrix on a substrate; forming a color photoresist layer on the substrate to cover the black matrix; A photomask is arranged above to perform an exposure process on the color photoresist layer, wherein the photomask has a light-transmitting area, a part of the light-transmitting area and an opaque area, and the part of the light-transmitting area is located on the light-transmitting area. between the region and the opaque region, and corresponding to the edge of the black matrix below; and performing a development process to pattern the color photoresist layer.

The purpose of the present invention and the solution to its technical problems can also be further realized by adopting the following technical measures.

In the aforementioned manufacturing method of the color filter film substrate, wherein the light-transmitting area of the part of the light-transmitting region of the mask decreases gradually from the light-transmitting region to the light-impermeable region.

In the aforementioned manufacturing method of the color filter film substrate, the material of the black matrix includes black resin.

The purpose of the present invention and its main technical problems are solved by adopting the following technical solutions. According to a method for manufacturing a color filter film substrate proposed by the present invention, the method includes the following steps: forming a black matrix on a substrate, and the black matrix is to divide the substrate into a first region, a second region and A third area; forming a first color photoresist layer on the substrate to cover the black matrix; setting a first photomask above the substrate to perform a first exposure to the first color photoresist layer process, wherein the first photomask has a first light-transmitting region, a first partial light-transmitting region and a first opaque region, and the first partial light-transmitting region is located between the first light-transmitting region and the first light-transmitting region Between the opaque regions and corresponding to the edge of the black matrix below; performing a first development process to retain the first color photoresist layer located in the first region; forming a second color on the substrate a photoresist layer to cover the patterned first color photoresist layer and the black matrix; a second photomask is arranged above the substrate to perform a second exposure process on the second color photoresist layer, wherein the The second photomask has a second light-transmitting area, a second partial light-transmitting area and a second opaque area, and the second partial light-transmitting area is located between the second light-transmitting area and the second opaque area Between the light areas, and corresponding to the edge of the black matrix below; performing a second developing process to retain the second color photoresist layer located in the second area; forming a third color photoresist on the substrate layer to cover the patterned first color photoresist layer, the patterned second color photoresist layer and the black matrix; a third photomask is set above the substrate to cover the third color photoresist layer performing a third exposure process, wherein the third mask has a third light transmission area, a third partial light transmission area and a third opaque area, and the third partial light transmission area is located on the third Between the light-transmitting area and the third opaque area, and corresponding to the edge of the black matrix below; and performing a third developing process to retain the third color photoresist layer located in the third area.

The purpose of the present invention and the solution to its technical problems can also be further realized by adopting the following technical measures.

In the aforementioned manufacturing method of the color filter film substrate, wherein the light-transmitting area of the first partial light-transmitting region of the first mask gradually decreases from the first light-transmitting region to the first light-impermeable region.

In the aforementioned manufacturing method of the color filter substrate, wherein the light-transmitting area of the second part of the light-transmitting region of the second mask gradually decreases from the second light-transmitting region to the second opaque region.

In the aforementioned manufacturing method of the color filter substrate, wherein the light transmission area of the third part of the light transmission area of the third mask gradually decreases from the third light transmission area to the third light transmission area.

In the aforementioned manufacturing method of the color filter film substrate, the material of the black matrix includes black resin.

The purpose of the present invention and its main technical problems are solved by adopting the following technical solutions. According to the structure of a color filter film substrate proposed by the present invention, it includes: a substrate; a black matrix disposed on the substrate; and a color photoresist layer covering the substrate, and part of the color photoresist The layer covers the edge of the black matrix, and the surface of the color photoresist layer is a flat surface.

The purpose of the present invention and the solution to its technical problems can also be further realized by adopting the following technical measures. In the aforementioned structure of the color filter film substrate, the black matrix material includes black resin.

Compared with the prior art, the present invention has obvious advantages and beneficial effects. As can be seen from the above technical solutions, in order to achieve the aforementioned object of the invention, the main technical contents of the present invention are as follows:

The present invention proposes a method for manufacturing a color filter film substrate. In the method, a black matrix is first formed on the substrate, wherein the material of the black matrix is, for example, black resin. Afterwards, a color photoresist layer is formed on the substrate to cover the black matrix. Then, a photomask is placed above the substrate to perform an exposure process on the color photoresist layer, wherein the photomask has a light-transmitting area, a partial light-transmitting area and an opaque area, and the partial light-transmitting area is located between the light-transmitting area and the light-transmitting area. Between the opaque areas and corresponding to the edge of the black matrix below. Next, a development process is performed to pattern the color photoresist layer. It is worth mentioning that, for example, the light transmittance ratio of the part of the light transmittance area decreases gradually from the light transmittance area to the light opaque area.

The present invention also proposes another manufacturing method of the color filter film substrate. In the method, a black matrix is firstly formed on the substrate, and the black matrix divides the substrate into a first area, a second area and a third area. Then, a first color photoresist layer is formed on the substrate to cover the black matrix. Afterwards, a first photomask is set above the substrate to perform a first exposure process on the first color photoresist layer, wherein the first photomask has a first light-transmitting region, a first partial light-transmitting region and a first light-impermeable region, And the first part of the light-transmitting area is located between the first light-transmitting area and the first opaque area, and corresponds to the edge of the lower black matrix. Next, a first developing process is performed to retain the first color photoresist layer located in the first region. Then, a second color photoresist layer is formed on the substrate to cover the patterned first color photoresist layer and the black matrix. Afterwards, a second photomask is placed above the substrate to perform a second exposure process on the second color photoresist layer, wherein the second photomask has a second light-transmitting region, a second partial light-transmitting region, and a second light-opaque region , and the second part of the light-transmitting area is located between the second light-transmitting area and the second opaque area, and corresponds to the edge of the lower black matrix. Then, a second developing process is performed to keep the second color photoresist layer located in the second area. Next, a third color photoresist layer is formed on the substrate to cover the patterned first color photoresist layer, the patterned second color photoresist layer and the black matrix. Next, a third photomask is placed above the substrate to perform a third exposure process on the third color photoresist layer, wherein the third photomask has a third light-transmitting region, a third part of the light-transmitting region and a third light-impermeable region area, and the third part of the light-transmitting area is located between the third light-transmitting area and the third opaque area, and corresponds to the edge of the lower black matrix. Afterwards, a third developing process is performed to keep the third color photoresist layer located in the third area. In particular, the light transmission area of the first part of the light transmission area of the first photomask gradually decreases from the first light transmission area to the first light transmission area, and the transmission area of the second part of the light transmission area of the second photomask The light area is gradually reduced from the second light transmission area to the second light transmission area, and the light transmission area of the third part of the light transmission area of the third mask is gradually reduced from the third light transmission area to the third light transmission area. reduce.

Since the present invention uses a photomask with a partial light-transmitting region to perform the exposure process, the removal rate of the photoresist region exposed through the part of the light-transmitting region after the development process is between that of the light-transmitting region Between the photoresist area corresponding to the opaque area, it can solve the problem that the conventional black resin is used as the material of the black matrix, and the problem of discontinuity of color is generated at the edge of the black matrix, and the formed colored light The resistive layer has a flat surface.

The present invention proposes a structure of a color filter film substrate, which includes a substrate, a black matrix, and a color photoresist layer. Wherein, the black matrix is configured on the substrate, and the material of the black matrix is, for example, black resin. In addition, the color photoresist layer covers the substrate, and part of the color photoresist layer covers the edge of the black matrix, and the surface of the color photoresist layer is a flat surface.

Since the surface of the color photoresist layer on the color filter substrate is flat, the liquid crystal display with the color filter substrate does not have the problem of poor display effect of conventional products.

To sum up, the manufacturing method and structure of the special color filter film substrate of the present invention can solve the problem of color gaps at the edge of the black matrix when black resin is used as the material of the black matrix, so that it is more practical. And has industrial utilization value. It has the above-mentioned many advantages and practical values, and it is indeed innovative in manufacturing methods and products, and has great improvements in manufacturing methods, product structures or functions, compared with the existing manufacturing methods and methods of color filter film substrates. Its structure has many enhanced functions, has made great progress in technology, and has produced easy-to-use and practical effects. It has wide application value in the industry, so it is more suitable for practical use. It is a novel, progressive and practical product. new design.

The above description is only an overview of the technical solutions of the present invention. In order to understand the technical means of the present invention more clearly and implement them according to the contents of the description, the preferred embodiments of the present invention and accompanying drawings are described in detail below.

Description of drawings

FIG. 1 is a schematic cross-sectional view of a conventional color filter film substrate.

FIG. 2 is a schematic cross-sectional view of another conventional color filter film substrate.

3A to 3D are schematic cross-sectional views of a manufacturing process of a color filter film substrate according to a preferred embodiment of the present invention.

FIG. 4 is a schematic top view of a partially light-transmitting region of the mask in FIG. 3C .

5A to 5J are schematic cross-sectional views of the manufacturing process of a full-color color filter film substrate according to another preferred embodiment of the present invention.

100, 200, 300: substrate 102, 202, 302: black matrix

104, 204, 204a: Color photoresist layer 206, 306, 314, 320: Photomask

208a, 308a, 316a, 322a: light transmission area

208b, 308b, 316b, 322b: Partially transparent areas

208c, 308b, 316c, 322c: opaque areas

210, 310, 315, 321: exposure process 301, 303, 305: sub-pixel area

304, 304a: red photoresist layer 312, 312a: green photoresist layer

318, 318a: blue photoresist layer h1, h2: height difference

Detailed ways

Hereinafter, with reference to the accompanying drawings and preferred embodiments, the manufacturing method and structure of the color filter film substrate according to the present invention and its specific manufacturing method, steps, structure, features and effects will be described in detail as follows.

Please refer to FIG. 3A to FIG. 3D , which are schematic cross-sectional views of the manufacturing process of a color filter film substrate according to a preferred embodiment of the present invention.

Please refer to FIG. 3A , the manufacturing method of the color filter film substrate of the present invention is to first form an opaque material (not shown in the figure) on the substrate 200, the opaque material is black resin, for example, And its thickness is, for example, between 1.0 and 1.2 microns. Afterwards, a general lithography process is performed on the opaque material to define a black matrix 202 .

Afterwards, as shown in FIG. 3B , a color photoresist layer 204 is formed on the substrate 200 to cover the black matrix 202 . Wherein, the color of the color photoresist layer 204 is, for example, red (R), green (G) or blue (B), and the formation method thereof is, for example, performing steps such as spin coating process (spin coating) and baking process. In addition, the material properties of the color photoresist layer 204 are, for example, a negative photoresist that strengthens the photoresist structure through a subsequent exposure process, or a positive photoresist that destroys the photoresist structure through a subsequent exposure process. In the embodiment, the color photoresist layer 204 with negative photoresist property is taken as an example for illustration.

Moreover, it is worth mentioning that since the thick black matrix 202 has been formed on the substrate 200 , the color photoresist layer 204 above the black matrix 202 will be raised to form a color photoresist layer 204 with an uneven surface.

Then, as shown in FIG. 3C , a photomask 206 is placed on the substrate 200 to perform an exposure process 210 on the color photoresist layer 204 . Wherein, the photomask 206 is composed of glass and an opaque film layer, and a photomask with a light-transmitting or opaque area is designed according to different requirements, wherein the opaque part is an opaque film layer Where it is configured, the material of the commonly used opaque film layer is, for example, chrome. In addition, the exposure process 210 is performed, for example, by using a UV light source.

In addition, it is worth mentioning that, in addition to the light-transmitting region 208a and the light-impermeable region 208c, the mask 206 further includes a partially light-transmitting region 208b located between the light-transmitting region 208a and the light-impermeable region 208c, and its corresponding At the edge of the lower black matrix 202, in this way, the exposure degree of the color photoresist layer 204 corresponding to the part of the light-transmitting region 208b is lower than that of the color photoresist layer 204 corresponding to the light-transmitting region 208a and the opaque region 208c. between.

In addition, since the color photoresist layer 204 of the negative photoresist is used for illustration in this embodiment, the color photoresist pattern to be retained needs to be exposed to enhance the strength of its own structure, so as to avoid its own structure during the subsequent development process. structure is damaged. Of course, in another preferred embodiment, if a positive photoresist is used as the color photoresist layer, the arrangement of the transparent region 208a, partially transparent region 208b and opaque region 208c of the mask 206 will be the same as in this embodiment. on the contrary.

In addition, in another preferred embodiment, the light transmission ratio of the partial light transmission area 208b of the used mask 206, for example, the light transmission area of the partial light transmission area 208b is from the light transmission area 208a to the non-transparent area. The transparent area 208c decreases gradually (as shown in FIG. 4 ), so that the exposure degree of the corresponding color photoresist layer 204 under the mask 206 gradually decreases from the transparent area 208a to the opaque area 208c.

Next, as shown in FIG. 3D , a developing process is performed to pattern the color photoresist layer 204 and form a patterned color photoresist layer 204 a. In the previous step, the color photoresist layer 204 was subjected to the exposure process 210 using the mask 206 with the part of the light-transmitting area 208b, so when the subsequent developing step is performed, the colored light corresponding to the part of the light-transmitting area 208b The photoresist removal rate of the resist layer 204 will be between the removal rate of the color photoresist layer 204 corresponding to the light-transmitting region 208a and the opaque region 208c, so at the interface between the black matrix 202 and the color filter film 204a (black The problem of discontinuous color difference at the edge of the matrix) can be solved, and the surface of the formed color filter film 204a is a flat surface.

Please continue to refer to FIG. 3D , and the structure of the color filter film substrate of the present invention will be described below. The structure of the color filter film substrate of the present invention includes a substrate 200 , a black matrix 202 and a color photoresist layer 204 a. Wherein, the black matrix 202 is disposed on the substrate 200, and the material of the black matrix 202 is, for example, black resin.

In addition, the color photoresist layer 204a covers the substrate 200, and part of the color photoresist layer 204a covers the edge of the black matrix 202, and the surface of the color photoresist layer 204a is a flat surface.

Of course, the present invention is not limited to the application of the above-mentioned single-color color filter film substrate, and the present invention can also be applied to the production of a full-color color filter film substrate. illustrate.

Please refer to FIG. 5A to FIG. 5J , which are schematic cross-sectional views of the manufacturing process of a full-color color filter film substrate according to another preferred embodiment of the present invention.

Please refer to Fig. 5A, the manufacturing method of the color filter film substrate of the present invention is to form an opaque material (not shown in the figure) comprehensively on the substrate 300 first, the opaque material is black resin for example , and its thickness is, for example, between 1.0 and 1.2 microns. Afterwards, a lithography process is performed on the opaque material to define a black matrix 302. At this time, the black matrix 302 divides the substrate 300 into several sub-pixel areas, and these sub-pixel areas are formed according to the color light to be formed. The color of the resist layer can be divided into red (R) sub-pixel area 301 , green (G) sub-pixel area 303 and blue (B) sub-pixel area 305 .

Then, as shown in FIG. 5B, a red (R) photoresist layer 304 is formed on the substrate 300 to cover the black matrix 302. The method for forming the red photoresist layer 304 is, for example, performing steps such as spin coating process and baking process, And in this embodiment, the red photoresist layer 304 with negative photoresist properties is taken as an example for illustration.

Next, as shown in FIG. 5C , a photomask 306 is placed above the substrate 300 to perform an exposure process 310 on the red photoresist layer 304 , wherein the photomask 306 has a transparent region 308 a , a partially transparent region 308 b and an opaque region. 308c, and the partially transparent region 308b is located between the transparent region 308a and the opaque region 308b, and corresponds to the edge of the black matrix 302 below. In addition, since the red photoresist layer 304 has a negative photoresist property in this embodiment, the red photoresist layer 304 to be kept corresponds to the light-transmitting region 308 a of the mask 306 . Afterwards, a developing process is performed to leave the red photoresist layer 304 a located in the red sub-pixel region 301 (as shown in FIG. 5D ).

Next, as shown in FIG. 5E , a green photoresist layer 312 is formed on the substrate 300 to cover the red photoresist layer 304 a and the black matrix 302 .

Then, as shown in FIG. 5F , a photomask 314 is placed above the substrate 300 to perform an exposure process 315 on the green photoresist layer 312, wherein the photomask 314 has the same characteristics as the photomask 306, and both have a light-transmitting region 316a , a partially transparent area 316b and an opaque area 316c, and the pattern of the mask 314 is designed according to different pattern requirements. Next, another developing process is performed to keep the green photoresist layer 312a located in the green sub-pixel region 303 (as shown in FIG. 5G ).

Afterwards, as shown in FIG. 5H , a blue photoresist layer 318 is formed on the substrate 300 to cover the red photoresist layer 304 a , the green photoresist layer 312 a and the black matrix 302 .

Next, as shown in FIG. 5I , a photomask 320 is placed above the substrate 300, and another exposure process 321 is performed on the blue photoresist layer 318, wherein the photomask 320 has the same characteristics as the photomask 306 or 314, and its All have a transparent area 322a, a partially transparent area 322b and an opaque area 322c, and the pattern of the mask 320 is designed according to different pattern requirements.

Next, as shown in FIG. 5J , another developing process is performed to keep the blue photoresist layer 318 a located in the blue sub-pixel region 305 . The red photoresist layer 304 a , the green photoresist layer 312 a and the blue photoresist layer 318 a formed according to the above can be subdivided into mosaic type, triangle type, stripe type, etc. according to the arrangement.

Of course, a plurality of film layers (not shown in the figure), such as a protective film, an electrode film, and an alignment film, are arranged in sequence above the formed color filter film substrate (including monochrome or full-color). The protective film is used to protect and planarize the color photoresist layers 204a, 304a, 312a, and 318a. In addition, the material of the electrode film is, for example, indium tin oxide and other materials with equivalent performance. In addition, the alignment film is used to make subsequent configurations on The liquid crystal molecules on it are arranged in a certain direction (alignment), so that the liquid crystal molecules can achieve the purpose of pre-tilt. The other surface of the substrate 200, 300 further includes a polarizer (not shown in the figure) to achieve the effect of display.

In addition, in addition to the color filter film substrate, a thin film transistor array substrate is additionally provided, and a liquid crystal layer is arranged between the two substrates, so as to complete the manufacture of a liquid crystal display. Wherein, the method of forming the thin film transistor array substrate and the liquid crystal layer is, for example, adopting the existing known process technology.

Therefore, it can be seen from the above that the present invention utilizes a photomask with a partial light-transmitting region to perform the exposure process, and the removal rate of the photoresist region exposed through the part of the light-transmitting region after the development process is between Between the photoresist area corresponding to the light-transmitting area and the opaque area, it can solve the conventional problem that black resin is used as the material of the black matrix, and the color gap is generated at the edge of the black matrix.

In addition, by using the manufacturing method of the color filter film substrate of the present invention, not only the problem of environmental pollution will not be generated, but also because the formed color photoresist layer has a flat surface, the liquid crystal display with the color filter substrate , will not cause the problem of poor color rendering in the prior art.

The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, can use the method and technical content disclosed above to make some changes or modifications to equivalent embodiments with equivalent changes, but any content that does not depart from the technical solution of the present invention, Any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention still fall within the scope of the technical solution of the present invention.

Claims (10)

1. A method for manufacturing a color filter substrate, characterized in that the method comprises the following steps: forming a black matrix on a substrate; forming a color photoresist layer on the substrate to cover the black matrix; A photomask is set above the substrate to perform an exposure process on the color photoresist layer, wherein the photomask has a light-transmitting area, a part of light-transmitting area and an opaque area, and the part of the light-transmitting area is located at Between the light-transmitting area and the opaque area, and corresponding to the edge of the black matrix below; and A development process is performed to pattern the color photoresist layer. 2. The method for manufacturing a color filter film substrate according to claim 1, wherein the light-transmitting area of the part of the light-transmitting region of the mask gradually increases from the light-transmitting region to the opaque region. reduce. 3. The manufacturing method of the color filter film substrate according to claim 1, wherein the material of the black matrix comprises black resin. 4. A method for manufacturing a color filter film substrate, characterized in that the method comprises the following steps: forming a black matrix on a substrate, the black matrix is to divide the substrate into a first area, a second area and a third area; forming a first color photoresist layer on the substrate to cover the black matrix; A first photomask is set above the substrate to perform a first exposure process on the first color photoresist layer, wherein the first photomask has a first light transmission area, a first partial light transmission area and a first first light transmission area An opaque area, and the first partial light-transmitting area is located between the first light-transmitting area and the first opaque area, and corresponds to the edge of the black matrix below; performing a first developing process to retain the first color photoresist layer located in the first region; forming a second color photoresist layer on the substrate to cover the patterned first color photoresist layer and the black matrix; A second photomask is set above the substrate to perform a second exposure process on the second color photoresist layer, wherein the second photomask has a second light transmission area, a second partial light transmission area and a The second opaque area, and the second part of the light-transmitting area is located between the second light-transmitting area and the second opaque area, and corresponds to the edge of the black matrix below; performing a second development process to retain the second color photoresist layer in the second region; forming a third color photoresist layer on the substrate to cover the patterned first color photoresist layer, the patterned second color photoresist layer and the black matrix; A third photomask is set above the substrate to perform a third exposure process on the third color photoresist layer, wherein the third photomask has a third light transmission area, a third partial light transmission area and a third light transmission area a third opaque area, and the third partial light-transmitting area is located between the third light-transmitting area and the third opaque area, and corresponds to the edge of the black matrix below; and A third developing process is performed to keep the third color photoresist layer in the third area. 5. The method for manufacturing a color filter film substrate according to claim 4, wherein the light transmission area of the first partial light transmission area of the first mask is from the first light transmission area to the The first opaque area gradually decreases. 6. The method for manufacturing a color filter film substrate according to claim 4, wherein the light transmission area of the second part of the light transmission area of the second mask is from the second light transmission area to The second opaque area decreases gradually. 7. The method for manufacturing a color filter film substrate according to claim 4, wherein the light transmission area of the third part of the light transmission area of the third mask is from the third light transmission area to The third opaque area decreases gradually. 8. The manufacturing method of the color filter film substrate according to claim 4, wherein the material of the black matrix comprises black resin. 9. A structure of a color filter film substrate, characterized in that it comprises: a substrate; a black matrix configured on the substrate; and A color photoresist layer covers the substrate, and part of the color photoresist layer covers the edge of the black matrix, and the surface of the color photoresist layer is a flat surface. 10. The structure of the color filter film substrate according to claim 9, wherein the black matrix material comprises black resin.

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