CN1782827A - Manufacturing method of color filter film and liquid crystal panel in thin film transistor array - Google Patents

Abstract

A method for manufacturing a color filter film on a thin film transistor array comprises the following steps: first, providing a substrate on which a thin film transistor array has been formed. Next, forming a black matrix on the thin film transistor array to define a plurality of sub-pixel regions, and forming a plurality of contact window openings in the black matrix. Subsequently, performing an inkjet process to form a color filter pattern in each sub-pixel region. Then, forming a covering layer on the sub-pixel regions, and forming a plurality of openings in the covering layer to expose the contact window openings in the black matrix. Thereafter, forming a plurality of pixel electrodes on the covering layer, wherein the pixel electrodes are electrically connected to the thin film transistor array through the openings and the contact window openings.

Description

Manufacturing method of color filter film and liquid crystal panel in thin film transistor array

technical field

The present invention relates to a method for manufacturing a color filter film, and in particular to a method for manufacturing a color filter film on a thin film transistor array.

Background technique

The rapid progress of the multimedia society is mostly due to the rapid progress of semiconductor components or display devices. As far as displays are concerned, Thin Film Transistor Liquid Crystal Display (TFT-LCD) has gradually become the mainstream of the market with its superior characteristics such as high picture quality, good space utilization efficiency, low power consumption, and no radiation.

TFT liquid crystal displays are mainly composed of a thin film transistor array substrate, a color filter substrate and a liquid crystal layer. The known method is to manufacture the thin film transistor array substrate and the color filter substrate separately, and then fill the liquid crystal between the two substrates, and then Sealing forms a thin film transistor liquid crystal display panel. In addition, there is a known method of manufacturing color filter films directly on the TFT array. This method can not only avoid the problem of poor assembly alignment between the color filter substrate and the TFT array substrate, but also avoid the problem of poor alignment between the two substrates. Part of the opening ratio is sacrificed due to alignment accuracy problems during assembly.

1A to 1F are flow charts of a known method for manufacturing a color filter film on a thin film transistor array. Please refer to FIG. 1A to FIG. 1H , first, as shown in FIG. 1A , a substrate 100 is provided on which a thin film transistor array 110 has been formed. Wherein, the thin film transistor array 110 is composed of a plurality of gates 112 , a gate insulating layer 114 , a plurality of semiconductor layers 116 and a plurality of source/drain electrodes 118a/118b.

Next, as shown in FIG. 1B , a protective layer 190 is formed on the thin film transistor array 110 , and a plurality of openings 170 a are formed in the protective layer 190 to expose the drain 118 b.

Then, as shown in FIG. 1C , a red color filter pattern 150 a is first formed on the protection layer 140 . The forming method is to coat the red color photoresist on the protective layer 190 by spin coating, and then perform the steps of exposing, developing and hard-baking the color photoresist, in order to form a red color filter pattern The region forms a red color filter pattern 150a, and forms an opening 170b, exposing the drain electrode 118b in the opening 170a.

Afterwards, as shown in FIG. 1D , the above steps are repeated to sequentially form the green color filter pattern 150b and the blue color filter pattern 150c, and form the black matrix 120 between the color filter patterns 150a, 150b, and 150c.

Next, as shown in FIG. 1E , a cover layer 160 is formed on each of the color filter patterns 150a, 150b, 150c and the black matrix 120, and a plurality of contact window openings 140 are formed in the cover layer 160, exposing previously exposed Drain 118b.

Then, as shown in FIG. 1F , a plurality of pixel electrodes 180 are formed on the cover layer 160 , and these pixel electrodes 180 are electrically connected to the drain 118 b of the thin film transistor array 110 through the contact openings 140 .

In the above method, when manufacturing the color filter pattern, it is necessary to form the color filter pattern of red, green and blue respectively, and the color filter pattern of each color needs to go through photoresist coating, exposure, development and hardening. Baking and other steps. Due to complicated process steps, the pass rate is likely to be reduced, and a photomask is required to define the pattern of the color filter pattern, which increases the cost of the photomask. In addition, after the thin film transistor substrate becomes larger, there will be a problem of difficulty in coating color photoresist.

Contents of the invention

Therefore, the object of the present invention is to provide a method for manufacturing a color filter film on a thin film transistor array, mainly using an inkjet process to form a color filter pattern, so as to simplify the manufacturing process of the color filter film.

Another object of the present invention is to provide a method for manufacturing a liquid crystal panel, mainly using an inkjet process to form a color filter pattern, so as to simplify the manufacturing process of the liquid crystal panel.

Based on the above and other objectives, the present invention proposes a method for manufacturing a color filter film on a thin film transistor array, which includes the following steps: first, a substrate is provided, and a thin film transistor array has been formed on the substrate. Next, a black matrix is formed on the thin film transistor array to define a plurality of sub-pixel regions, and a plurality of contact window openings are formed in the black matrix. Then, an inkjet process is performed to form a color filter pattern in each sub-pixel area. Then, a cover layer is formed on the sub-pixel regions, and a plurality of openings are formed in the cover layer to expose the contact window openings in the black matrix. After that, a plurality of pixel electrodes are formed on the covering layer, wherein the pixel electrodes are electrically connected with the thin film transistor array through the openings and the contact window openings.

The present invention further proposes a method for manufacturing a liquid crystal panel, which includes the following steps: firstly, a first substrate is provided, and a thin film transistor array has been formed on the first substrate. Next, a black matrix is formed on the thin film transistor array to define a plurality of sub-pixel regions, and a plurality of contact window openings are formed in the black matrix. Then, an inkjet process is performed to form a color filter pattern in each sub-pixel area. Then, a cover layer is formed on each sub-pixel area, and a plurality of openings are formed in the cover layer to expose the contact window openings in the black matrix. After that, a plurality of pixel electrodes are formed on the covering layer, wherein the pixel electrodes are electrically connected with the thin film transistor array through the openings and the contact window openings. Next, a second substrate is provided, and a liquid crystal layer is formed between the first substrate and the second substrate.

In the above method of manufacturing a liquid crystal panel, the second substrate includes, for example, a glass substrate and a shared electrode film.

In the above method of manufacturing a liquid crystal panel, the second substrate is, for example, a glass substrate. In this case, after forming the pixel electrodes on the covering layer, for example, forming a plurality of shared electrodes on the covering layer is also included.

In the above-mentioned method for manufacturing color filter films on the thin film transistor array and the method for manufacturing a liquid crystal panel, before forming the black matrix, for example, it also includes forming a protective layer on the thin film transistor array.

In the above method of manufacturing color filter films on a thin film transistor array and the method of manufacturing liquid crystal panels, the method of forming a black matrix includes, for example, forming a material layer on a substrate and patterning the material layer. Wherein, the forming method of the material layer is, for example, a spin (spin) coating method, a nozzle/spin (slit/spin) coating method or a non-spin (spin-less) coating method. In addition, the material layer is, for example, black resin.

In the above-mentioned method of manufacturing color filter films on a thin film transistor array and the method of manufacturing liquid crystal panels, the inkjet process includes, for example, spraying color filter patterns in these sub-pixel regions, and baking these color filter patterns .

In the above-mentioned method for manufacturing a color filter film on a thin film transistor array and the method for manufacturing a liquid crystal panel, the material of the covering layer is, for example, an organic photosensitive resin. Wherein, the organic photosensitive resin is selected from, for example, one of benzocyclobutene (BCB), acrylic (Acrylic), polyimide (Polyimide), styrene (Styrene) and combinations thereof.

In the method for manufacturing a color filter substrate on a thin film transistor array and the method for manufacturing a liquid crystal panel of the present invention, the color filter patterns of red, green and blue can be formed simultaneously due to the inkjet process and only include spraying color ink and baking steps. Compared with the known method, color filter patterns of red, green, and blue colors need to be formed separately, and the color filter patterns of each color must go through the steps of color photoresist coating, exposure, development, and hard baking. , the invention can simplify the process of the color filter film and improve the qualification rate. Moreover, the use of inkjet technology can not only avoid the problem of difficult coating of color photoresist when the TFT substrate is enlarged, but also reduce the cost of photomask because the inkjet process does not require a photomask to pattern the color photoresist .

In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are specifically cited below and described in detail with accompanying drawings.

Description of drawings

1A to 1F are flowcharts of a known method for manufacturing a color filter substrate on a thin film transistor array.

2A to 2E are flow charts of a method for manufacturing a color filter film on a thin film transistor array according to the present invention.

3A and 3B are top views of thin film transistor arrays.

FIG. 4 is a structural schematic diagram of another method for manufacturing a color filter film on a thin film transistor array according to the present invention.

5A to 5B are flowcharts of a method for manufacturing a liquid crystal panel according to the present invention.

FIG. 6 is a schematic structural diagram of another manufacturing method of a liquid crystal panel of the present invention.

Description of main component marking

50: Nozzle

100, 300a, 300b: substrate

110: thin film transistor array

112: grid

114: Gate insulating layer

116: semiconductor layer

118a: Source

118b: drain

120, 220: black matrix

140, 240: contact window opening

150a: Red color filter pattern

150b: Green color filter pattern

150c: blue color filter pattern

160, 260: Overlay

170a, 170b, 270: openings

180, 280: pixel electrode

190, 290: protective layer

230: sub-pixel area

250: color ink

252: Color filter pattern

295, 320: shared electrodes

310: glass substrate

400: liquid crystal layer

Detailed ways

Method for manufacturing color filter film on thin film transistor array

2A to 2E are flowcharts of a method for manufacturing a color filter film on a thin film transistor array according to the present invention, and FIGS. 3A and 3B are top views of the thin film transistor array. Please refer to FIG. 2A to FIG. 2E and FIG. 3A and FIG. 3B at the same time. A method of manufacturing a color filter film on a thin film transistor array in this embodiment includes the following steps: first, as shown in FIG. 2A, a substrate 100 is provided, and A TFT array 110 has been formed on the substrate 100 . Among them, the method of forming the thin film transistor array 110 is, for example, first forming a plurality of gates 112 on the substrate 100; then depositing a gate insulating layer 114 on the substrate 100 to cover the gates 112; 116 (such as including a channel layer and an ohmic contact layer formed on the channel layer); and forming source/drain electrodes 118 a / 118 b on the semiconductor layer 116 .

Next, as shown in FIG. 2B and FIG. 3A, a black matrix 220 is formed on the thin film transistor array 110 to define a plurality of sub-pixel regions 230, and a plurality of contact openings 240 are formed in the black matrix 220 to expose the thin film transistors. Drain 118b in array 110 . In one embodiment, the black matrix 220 is formed by, for example, first forming a material layer on the substrate 100 and then patterning the material layer. The material layer is formed by, for example, coating the material layer on the thin film transistor array 110 by spin coating, nozzle/spin (slit/spin) coating or non-spin coating. The step of patterning the material layer includes exposing, developing and hard-baking the material layer. In addition, the material layer is, for example, black resin.

Next, as shown in FIGS. 2C , 2D and 3B , an inkjet process is performed to form a color filter pattern 252 in each sub-pixel region 230 . In more detail, the above-mentioned inkjet process includes, for example, using nozzles 50 filled with red (R), green (G) or blue (B) ink to form red, green or blue sub-pixel regions 230 The color ink 250 is sprayed inside, and then baked, so that the color ink 250 is cured to form a color filter pattern 252, as shown in FIG. 2D. It is worth noting that in this embodiment, the red, green and blue color filter patterns 252 are formed in these sub-pixel regions 230 at the same time, and the formation of the color filter patterns 252 only requires steps such as inkjet and baking. , so the steps of forming the known color filter pattern can be simplified.

Then, as shown in FIG. 2D , a covering layer 260 is formed on the sub-pixel regions 230 , and a plurality of openings 270 are formed in the covering layer 260 to expose the contact openings 240 in the black matrix 220 . Wherein, the method of forming the covering layer 260 is, for example, coating a covering material layer (not shown in the figure) on the color filter pattern 252 and the black matrix 220 by using a spin coating method, and then curing it by baking. The step of patterning the cover layer 260 to form the opening 270 includes, for example, exposing and developing the cover layer 260 . In addition, the covering layer 260 is, for example, an organic photosensitive resin. The organic photosensitive resin is, for example, selected from one of benzocyclobutene, acrylic acid, polyimide, styrene and combinations thereof.

Afterwards, as shown in FIG. 2E , a plurality of pixel electrodes 280 are formed on the cover layer 260 , wherein the pixel electrodes 280 pass through the openings 270 (as shown in FIG. 2D ) and the contact window openings 240 (as shown in FIG. 2D ). It is electrically connected to the drain 118b in the thin film transistor array 110 . Wherein the pixel electrode 280 is, for example, an indium tin oxide (Indium Tin Oxide, ITO) transparent conductive film, and its forming method is, for example, first forming an indium tin oxide film on the cover layer 260 by sputtering, and then using a photomicrograph and an etching process to pattern the ITO film to form the pixel electrode 280 . In this embodiment, because the cover layer 260 (organic photosensitive resin) has low dielectric constant, high heat-resistant temperature and flattening characteristics, the pixel electrodes can be formed above the scanning lines or data lines to increase the number of pixels. The area of the electrode further increases the aperture ratio.

FIG. 4 is a structural schematic diagram of another method for manufacturing a color filter film on a thin film transistor array according to the present invention. Please refer to FIG. 4 , in the first embodiment of the present invention, before forming the black matrix 220 (as shown in FIG. 2B ), a protective layer 290 may also be formed on the thin film transistor array 110 and formed in the protective layer 290. A plurality of contact openings 240 expose the drain 118b of the TFT array 110 . Wherein, the material of the protective layer 290 is, for example, silicon nitride, and its formation method is, for example, depositing a silicon nitride layer on the thin film transistor array 110 first, and then forming a patterned photoresist layer on the silicon nitride layer (not shown in the figure). out). Then, the silicon nitride layer is etched using the patterned photoresist layer as an etching mask to form the contact window opening 240, and then the above-mentioned patterned photoresist layer is removed.

Manufacturing method of liquid crystal panel

5A to 5B are flow charts of the manufacturing method of the liquid crystal panel according to the present invention. Please refer to FIG. 5A to FIG. 5B at the same time. The manufacturing method of the liquid crystal panel in this embodiment includes the following steps: First, as shown in FIG. A black matrix 220 is formed on the upper thin film transistor array 110 to define a plurality of sub-pixel regions 230 , and a plurality of contact openings 240 are formed in the black matrix 220 . Afterwards, an inkjet process is performed to form a color filter pattern 252 in each sub-pixel region 230 . Then, a cover layer 260 is formed on the sub-pixel regions 230 , and a plurality of openings 270 are formed in the cover layer 260 to expose the contact openings 240 in the black matrix 220 . Next, a plurality of pixel electrodes 280 are formed on the cover layer 260 , wherein the pixel electrodes 280 are electrically connected to the drain 118 b of the TFT array 110 through the openings 270 and the contact openings 240 .

It should be noted that, in another embodiment, before forming the black matrix 220 , the protective layer 290 may also be formed on the thin film transistor array 110 (as shown in FIG. 4 ).

After that, as shown in FIG. 5B , a substrate 300 a is provided, and a liquid crystal layer 400 is formed between the substrate 100 and the substrate 300 a. In one embodiment, the substrate 300 a includes, for example, a glass substrate 310 and a shared electrode film 320 formed on the glass substrate 310 , and the shared electrode film 320 is, for example, a transparent conductive film, such as indium tin oxide. In addition, the formation method of the liquid crystal layer 400 is, for example, to drop the liquid crystal into the substrate 100 by a drop method (One Drop Fill), including coating a plastic frame (not shown in the figure) on the substrate 100 first, and its material is, for example, ultraviolet ray Harden the glue, and then drop the liquid crystal into the glue frame. Next, the substrate 100 and the second substrate 300 a are aligned and pressed into shape in a vacuum environment. Afterwards, the plastic frame is irradiated with ultraviolet light under normal pressure to harden the plastic frame.

FIG. 6 is a schematic structural diagram of another manufacturing method of a liquid crystal panel of the present invention. Please refer to FIG. 6 , in another embodiment, if the liquid crystal panel is of an In-Plane Switching mode (IPS mode) structure, the substrate 300b is, for example, a glass substrate. Moreover, after forming the pixel electrodes 280 on the covering layer 260 , for example, forming a plurality of shared electrodes 295 on the covering layer 260 is also included. In addition, the formation method of the liquid crystal layer 400 is similar to the above, and will not be repeated here.

In summary, in the method for manufacturing a color filter substrate on a thin film transistor array and the method for manufacturing a liquid crystal panel of the present invention, the color filter patterns of red, green and blue can be formed simultaneously due to the inkjet process, and only It includes the steps of spraying the color filter pattern and baking the color filter pattern. Compared with the known method, color filter patterns of red, green, and blue colors need to be formed separately, and the color filter patterns of each color must go through the steps of color photoresist coating, exposure, development, and hard baking. , the invention can simplify the process of the color filter film and improve the qualification rate. Moreover, the use of inkjet technology can not only avoid the problem of difficult coating of color photoresist when the TFT substrate is enlarged, but also reduce the cost of photomask because the inkjet process does not require a photomask to pattern the color photoresist .

In addition, since the color filter film is directly manufactured on the TFT array, the present invention can reduce the purchase cost of the color filter substrate, and can avoid the problem of poor alignment accuracy between the TFT array substrate and the color filter substrate. In addition, in the present invention, the protective layer can be replaced by the color filter pattern, the black matrix and the cover layer, so one photomask process can be reduced and the material cost of the protective layer can be saved.

Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any ordinary person in the technical field to which the invention belongs can make some changes and changes without departing from the spirit and scope of the present invention. Improvement, so the scope of protection of the present invention should be defined by the claims.

Claims (18)

1. method of making colored filter film on thin film transistor (TFT) array is characterized in that comprising:

Substrate is provided, and has been formed with thin film transistor (TFT) array on this substrate;

On this thin film transistor (TFT) array, form black matrix, defining a plurality of sub-pixs district, and in this black matrix, form a plurality of contact windows;

Carry out ink-jetting process, in each above-mentioned these sub-pix district, to form color filter patterns;

In above-mentioned these sub-pix districts, form overlayer, and in this overlayer, form a plurality of openings, to expose above-mentioned these contact windows in this black matrix; And

Form a plurality of pixel electrodes on this overlayer, wherein above-mentioned these pixel electrodes are electrically connected with this thin film transistor (TFT) array by above-mentioned these openings and above-mentioned these contact windows.

2. the method for on thin film transistor (TFT) array making colored filter film according to claim 1 is characterized in that also comprising prior to forming protective seam on this thin film transistor (TFT) array before formation should be deceived matrix.

3. the method for on thin film transistor (TFT) array making colored filter film according to claim 1 is characterized in that the formation method of this black matrix comprises:

On this substrate, form material layer; And

This material layer of patterning.

4. the method for on thin film transistor (TFT) array making colored filter film according to claim 3 is characterized in that the formation method of this material layer comprises method of spin coating, nozzle/rotation (slit/spin) rubbing method or non-rotating rubbing method.

5. the method for on thin film transistor (TFT) array making colored filter film according to claim 3 is characterized in that this material layer is a black resin.

6. the method for on thin film transistor (TFT) array making colored filter film according to claim 1 is characterized in that this ink-jetting process comprises:

In above-mentioned these sub-pix districts, spray color filter patterns; And

Above-mentioned these color filter patterns are toasted.

7. the method for on thin film transistor (TFT) array making colored filter film according to claim 1, the material that it is characterized in that this overlayer is an organic photo type resin.

8. the method for on thin film transistor (TFT) array making colored filter film according to claim 7, it is characterized in that this organic photo type resin be selected from benzocyclobutene (Benzocyclobutene, BCB), acrylic acid (Acrylic), polyimide (Polyimide) and styrene (Styrene) with and the group that formed of combination.

9. the manufacture method of a liquid crystal panel is characterized in that comprising:

First substrate is provided, and has been formed with thin film transistor (TFT) array on this first substrate;

On this thin film transistor (TFT) array, form black matrix, defining a plurality of sub-pixs district, and in this black matrix, form a plurality of contact windows;

Carry out ink-jetting process, in each above-mentioned these sub-pix district, to form color filter patterns;

In above-mentioned these sub-pix districts, form overlayer, and in this overlayer, form a plurality of openings, to expose above-mentioned these contact windows in this black matrix;

Form a plurality of pixel electrodes on this overlayer, wherein above-mentioned these pixel electrodes are electrically connected with this thin film transistor (TFT) array by above-mentioned these openings and above-mentioned these contact windows; And

Second substrate is provided, and between this first substrate and this second substrate, forms liquid crystal layer.

10. according to the manufacture method of the described liquid crystal panel of claim 9, it is characterized in that before formation should be deceived matrix, also comprising prior to forming protective seam on this thin film transistor (TFT) array.

11., it is characterized in that the formation method of this black matrix comprises according to the manufacture method of the described liquid crystal panel of claim 9:

On this substrate, form material layer; And

This material layer of patterning.

12., it is characterized in that the formation method of this material layer comprises method of spin coating, nozzle/rotation (slit/spin) rubbing method or non-rotating rubbing method according to the manufacture method of the described liquid crystal panel of claim 11.

13., it is characterized in that this material layer is a black resin according to the manufacture method of the described liquid crystal panel of claim 11.

14., it is characterized in that this ink-jetting process comprises according to the manufacture method of the described liquid crystal panel of claim 9:

In above-mentioned these sub-pix districts, spray color filter patterns; And

Above-mentioned these color filter patterns are toasted.

15. according to the manufacture method of the described liquid crystal panel of claim 9, the material that it is characterized in that this overlayer is an organic photo type resin.

16. the method for on thin film transistor (TFT) array making colored filter film according to claim 15, it is characterized in that this organic photo type resin be selected from benzocyclobutene (Benzocyclobutene, BCB), acrylic acid (Acrylic), polyimide (Polyimide) and styrene (Styrene) with and the group that formed of combination.

17., it is characterized in that this second substrate comprises glass substrate and is formed on shared electrode film on this glass substrate according to the manufacture method of the described liquid crystal panel of claim 9.

18. according to the manufacture method of the described liquid crystal panel of claim 9, it is characterized in that after forming above-mentioned these pixel electrodes on this overlayer, also be included in and form a plurality of shared electrode on this overlayer, and this second substrate be a glass substrate.

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