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CN1509499A - Substrate for component soldering and manufacturing method thereof - Google Patents

Substrate for component soldering and manufacturing method thereof Download PDF

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CN1509499A
CN1509499A CNA028083644A CN02808364A CN1509499A CN 1509499 A CN1509499 A CN 1509499A CN A028083644 A CNA028083644 A CN A028083644A CN 02808364 A CN02808364 A CN 02808364A CN 1509499 A CN1509499 A CN 1509499A
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substrate
layer
solder
metal
soldering
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CN1316605C (en
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横山浩树
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Tokuyama Corp
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Abstract

一种用于焊接元件的基板，包括氮化铝等的基板，在其表面上形成金电极层，在金电极层上形成的金属层包括从Ag、Cu、Ni和Pb构成的组中选择的至少一种金属，和在该金属层上形成包含具有低融点的软焊料的层，例如具有金含量不大于20wt％的Au－Sn型焊料层。通过以电极接触上述基板的焊料层，然后在低温下进行回流焊接的方式，来焊接具有电极的元件。上述基板使元件与基板高焊接强度地连接。

A substrate for soldering components, including a substrate of aluminum nitride or the like, on whose surface a gold electrode layer is formed, and the metal layer formed on the gold electrode layer includes a metal selected from the group consisting of Ag, Cu, Ni, and Pb. At least one metal, and a layer containing soft solder with a low melting point, such as an Au—Sn type solder layer with a gold content of not more than 20 wt%, is formed on the metal layer. The components with the electrodes are soldered by contacting the electrodes with the solder layer of the above-mentioned substrate, and then performing reflow soldering at a low temperature. The above-mentioned substrate connects the element and the substrate with high soldering strength.

Description

元件焊接用基板及其制造方法Substrate for component soldering and manufacturing method thereof

技术领域technical field

本发明涉及用于焊接、固定元件的基板及其制造方法。The invention relates to a substrate for welding and fixing components and a manufacturing method thereof.

背景技术Background technique

近年来，随着携带电话和光通信的普及，作为在高频带中工作的高输出、高消耗电力的GaAs系FET、Si-Ge系HBT、Si系MOSFET或GaN系激光二极管等半导体元件的封装用基板，使用陶瓷基板，以便减少高频介质损失。在这种陶瓷基板中，氮化铝烧结基板因其导热率高、热膨胀系数接近半导体元件而特别引人注目。In recent years, with the popularization of mobile phones and optical communications, as a package of semiconductor elements such as GaAs-based FETs, Si-Ge-based HBTs, Si-based MOSFETs, and GaN-based laser diodes that operate in high-frequency bands with high output and high power consumption Use a substrate, use a ceramic substrate, in order to reduce high-frequency dielectric loss. Among such ceramic substrates, aluminum nitride sintered substrates are particularly attractive because of their high thermal conductivity and thermal expansion coefficient close to that of semiconductor elements.

通常，一般是在将元件焊接于氮化铝烧结体等陶瓷基板上的情况下，通过金属镀敷在陶瓷基板上形成牢固焊接的第一和第二二衬底金属层后，在该衬底金属层上形成金电极，在该金电极上焊料附加元件(参照(日本)特开平7-94786号公报、特开平10-242327号公报和特开2000-288770号公报)。而且，作为此时使用的焊料，一般使用金含量为约80重量％的组成下的融点为280℃的Au-Sn系焊料(以下，也称为‘高浓度金的Au-Sn系焊料’。杨氏模量为59.2GPa(25℃时))。而作为使用上述高浓度金的Au-Sn系焊料的焊料附加方法，由于可高精度地控制元件的搭载位置，自动化也容易，所以最好采用熔化预先供给到基板上的焊料来进行焊接的回流法。Usually, in the case of soldering the element to a ceramic substrate such as an aluminum nitride sintered body, the first and second substrate metal layers that are firmly welded are formed on the ceramic substrate by metal plating, and the substrate A gold electrode is formed on the metal layer, and components are soldered on the gold electrode (see (Japanese) JP-A-7-94786, JP-A-10-242327, and JP-A-2000-288770). In addition, as the solder used at this time, Au—Sn based solder having a melting point of 280° C. in a composition having a gold content of about 80% by weight (hereinafter also referred to as “high-concentration gold Au—Sn based solder”) is generally used. The Young's modulus is 59.2 GPa (at 25° C.)). On the other hand, as the soldering method using the above-mentioned high-concentration gold Au-Sn-based solder, since the mounting position of the component can be controlled with high precision and automation is easy, it is preferable to use the reflow method of melting the solder supplied in advance on the substrate and performing soldering. Law.

因此，作为焊接元件的基板，大多使用在基板电极层上的规定位置上预先形成焊料膜的基板。例如，在上述特开2000-288770号公报中公开了在陶瓷衬底上形成衬底层/镀Ni层/镀Au层等构成的多层电极，在该电极上叠层‘最下层为Au薄膜，在Au薄膜上叠层防止扩散金属层，在该防止扩散金属层上形成具有Au层和Sn层的交替层的多层焊料’的基板，在该基板上可按充分的焊接强度焊接具有Au电极的半导体元件。在该公报中，作为上述多层焊料，为了Au和Sn的整体重量比与熔融时高浓度金的Au-Sn系焊料的组成相同，说明了最好是以Au/Sn为70/30～76/24的重量比来叠层Au层和Sn层。而且，上述防止扩散金属层防止在镀Au层等的电镀时混入的电镀液造成的空隙或杂质的扩散，同时防止该层上的AuSn多层焊料腐蚀衬底的镀Au层，作为构成该层的金属，说明了最好使用铂族元素，特别是Pt。Therefore, as a substrate for soldering components, a substrate on which a solder film is previously formed at a predetermined position on the substrate electrode layer is often used. For example, in the above-mentioned Japanese Patent Application Laid-Open No. 2000-288770, it is disclosed that a multilayer electrode composed of substrate layer/Ni-plated layer/Au-plated layer is formed on a ceramic substrate, and the lowest layer is an Au thin film on the electrode. A metal layer for preventing diffusion is laminated on the Au thin film, and a multi-layer solder' substrate having alternate layers of Au layers and Sn layers is formed on the metal layer for preventing diffusion, and Au electrodes can be soldered on the substrate with sufficient welding strength. semiconductor components. In this gazette, as the above-mentioned multilayer solder, it is explained that Au/Sn is preferably 70/30 to 76 so that the overall weight ratio of Au and Sn is the same as the composition of Au-Sn based solder with a high concentration of gold during melting. Au layer and Sn layer are stacked at a weight ratio of /24. Moreover, the above-mentioned diffusion preventing metal layer prevents the diffusion of voids or impurities caused by the plating solution mixed in the plating of the Au plating layer and the like, and at the same time prevents the AuSn multilayer solder on the layer from corroding the Au plating layer of the substrate. metals, it is best to use platinum group elements, especially Pt.

但是，近年来，在半导体元件中，为了提高记录密度和数据的电送距离而设计高输出化，使用时元件产生的热量也增大。这样的发热量增大，意味着使用时的温度变化增大，带来因基板和元件的热膨胀系数差造成的应力而引起焊接部的破坏问题。作为解决这种问题的方法，提出了以下方法：(1)使用融点更低的焊料来进行低温焊接，在焊接后冷却至室温时尽量减小残留在元件和基板的焊接位置中的应力；以及(2)使用具有缓和因使用时的温度变化引起的产生于焊接部位的应力的能力的软焊料。However, in recent years, semiconductor elements have been designed for high output in order to increase the recording density and the electrical transmission distance of data, and the heat generated by the element during use has also increased. Such an increase in calorific value means that the temperature change during use increases, which brings about the problem of damage to the soldered part due to the stress caused by the difference in thermal expansion coefficient between the substrate and the element. As a method for solving such a problem, the following methods have been proposed: (1) low-temperature soldering is performed using a solder having a lower melting point, and the stress remaining in the soldering position of the component and the substrate is minimized when cooling to room temperature after soldering; and (2) Use soft solder that has the ability to relax the stress generated at the soldered part due to temperature changes during use.

上述(1)和(2)的方法可通过使用低融点并且软焊料，例如在Au-Sn系合金中锡含量超过80重量％并且其融点低于280℃的合金构成的焊料(以下也称为‘高浓度锡的Au-Sn系焊料’)来实现。但是，实际上，在基板上形成了金电极上，形成高浓度锡的Au-Sn系焊料构成的层并附加元件的焊料时，可知焊料的融点上升，同时焊料的熔融特性恶化。引起这种现象的原因可从图1所示的Au-Sn合金状态图(出处：‘金属临时增刊号实用二维合金状态图集’，株式会社ァゲネ，平成4年10月10日发行，第92页)来理解，可认为在高浓度锡的Au-Sn系焊料层的制膜中或制膜后的保存中，金电极层中的金原子扩散到该焊料层中，变化为融点高的组成，同时在金电极和焊料的界面附近，形成呈现所谓AuSn或AuSn脆弱性质的金属间化合物。The methods of the above (1) and (2) can be achieved by using a low melting point and soft solder, such as a solder composed of an alloy with a tin content exceeding 80% by weight in an Au-Sn alloy and a melting point lower than 280°C (hereinafter also referred to as 'High-concentration tin Au-Sn based solder') to achieve. However, in practice, when a gold electrode is formed on a substrate, a layer composed of high-tin-concentration Au-Sn-based solder is formed, and the component solder is added, the melting point of the solder increases and the melting properties of the solder deteriorate. The reason for this phenomenon can be seen from the Au-Sn alloy state diagram shown in Figure 1 (Source: "Metal Temporary Supplementary Issue Practical Two-dimensional Alloy State Atlas", ァ㲲ネ Co., Ltd., issued on October 10, 2014, No. 92), it can be considered that during the film formation of the Au-Sn based solder layer with high tin concentration or during the storage after film formation, the gold atoms in the gold electrode layer diffuse into the solder layer and change to a solder layer with a high melting point. Composition, while near the interface of the gold electrode and solder, an intermetallic compound exhibiting so-called AuSn or AuSn brittle properties is formed.

本发明人考虑通过设置上述特开2000-288770号公报中公开的防止扩散金属层(以下也称为金属阻挡层)会不会防止上述那样的金扩散(换句话说，高浓度锡的Au-Sn系焊料造成的金腐蚀)，在金电极层上设置厚度为2μm的Pt构成的金属阻挡层，尝试在其上形成高浓度锡的Au-Sn系焊料膜层，附加带有金电极的元件的焊料。其结果，虽然确认了融点上升得以改善，焊料的熔融特性也可提高，但判明存在焊接强度低的问题。即，在通过管芯共用测试器(die sharetester)测定焊接强度时，在金属阻挡层和焊料层之间会引起剥离，并判明管芯共用强度也低至1.4kgf/mm2。The inventors of the present invention considered whether the above-mentioned diffusion of gold (in other words, high-concentration tin Au- Corrosion of gold caused by Sn-based solder), set a metal barrier layer made of Pt with a thickness of 2 μm on the gold electrode layer, try to form an Au-Sn-based solder film layer with a high concentration of tin on it, and attach a component with a gold electrode of solder. As a result, it was confirmed that the increase in the melting point was improved and the melting properties of the solder were also improved, but it was found that there was a problem of low soldering strength. That is, when the solder strength was measured by a die share tester, peeling occurred between the metal barrier layer and the solder layer, and it was found that the die share strength was also as low as 1.4 kgf/mm 2 .

发明内容Contents of the invention

本发明的目的在于提供一种元件焊接用基板，可将焊料用高焊接强度进行焊接，在表面上具有金电极层。An object of the present invention is to provide a substrate for component soldering, which can solder with high soldering strength, and which has a gold electrode layer on the surface.

本发明的另一目的在于，提供一种结合元件用基板，该基板表面具有金电极层，使用低融点柔软的焊料如富锡的Au-Sn系焊料，能在低温下使元件附加焊料。Another object of the present invention is to provide a substrate for bonding components, which has a gold electrode layer on the surface and uses low melting point soft solder such as tin-rich Au-Sn solder, which can attach solder to components at low temperature.

本发明的另一目的在于，提供一种元件焊接用基板的制造方法，可将焊料用高焊接强度进行焊接，在表面上具有金电极层。Another object of the present invention is to provide a method of manufacturing a substrate for component bonding, which can solder with high soldering strength and has a gold electrode layer on the surface.

本发明的其他目的可从以下说明中变得清楚。Other objects of the present invention will become clear from the following description.

本发明人为了解决上述课题而进行了深入的研究。其结果，作为在表面上形成了金电极层的基板的该金电极层上设置特定金属构成的金属阻挡层的基板，在使用该基板通过高浓度锡Au-Sn系焊料来附加元件的焊料时，发现可以在低温下焊接，而且此时的焊接强度高。然后，根据该发现进一步研究的结果，发现这样的效果不限于使用高浓度Au-Sn系焊料，也可使用金含量低于20重量％的In系焊料，从而完成了本发明。The inventors of the present invention conducted intensive studies to solve the above-mentioned problems. As a result, as a substrate on which a gold electrode layer is formed on the surface, a metal barrier layer made of a specific metal is provided on the gold electrode layer. , found that it can be welded at low temperature, and the welding strength at this time is high. Then, as a result of further research based on this discovery, it was found that such an effect is not limited to the use of high-concentration Au-Sn-based solder, but also In-based solder with a gold content of less than 20% by weight, and completed the present invention.

即，本申请第一发明是元件焊接用基板，其特征在于，具有在表面上形成金电极层的基板的该金电极层上叠层从Ag、Cu、Ni和Pb构成的组中选择的至少一种金属构成的金属层的叠层结构。That is, the first invention of the present application is a substrate for element soldering, characterized in that at least one selected from the group consisting of Ag, Cu, Ni, and Pb is stacked on the gold electrode layer of the substrate having a gold electrode layer formed on the surface. A laminated structure of metal layers made of metal.

本发明的元件焊接用基板的特征在于，使用含有以高浓度锡的Au-Sn系焊料等的Sn或In为主要成分并且金含量不大于20重量％的金属构成的焊料层，可将元件高焊接强度焊接。在上述本发明的元件焊接用基板中，作为表面上形成金电极层的基板，使用在以氮化铝为主要成分的陶瓷基板上，依次叠层以Ti为主要成分的第一衬底层、以Pt为主要成分的第二衬底层、以及金构成的电极层的金属化基板，具有焊接元件使用时的高频介电损失小，将此时产生的热进行散热的功能强的特征。The substrate for component soldering of the present invention is characterized in that it uses a solder layer that contains Sn or In such as Au-Sn based solder with a high concentration of tin as a main component and a gold content of not more than 20% by weight. Weld Strength Weld. In the substrate for element bonding of the above-mentioned present invention, as the substrate on which the gold electrode layer is formed on the surface, a ceramic substrate mainly composed of aluminum nitride is used, and the first underlayer mainly composed of Ti is laminated sequentially. The metallized substrate of the second substrate layer with Pt as the main component and the electrode layer made of gold has the characteristics of low high-frequency dielectric loss when the soldered component is used, and has a strong function of dissipating the heat generated at this time.

在从所述Ag、Cu、Ni和Pb构成的组中选择的至少一种金属构成的金属层上具有还叠层了以Au-Sn为主要成分并且金的含有量低于20重量％的金属构成的焊料层的叠层结构的元件焊接用基板可适用于回流焊接。而且，形成焊料层的金属含有Sn或In作为主要成分，金的含有量低于20重量％，25℃时的杨氏模量低于50GPa，而且融点低于280℃的元件焊接用基板具有以下特征：即使焊接元件并长期使用，焊接面也难以受到破坏。On the metal layer composed of at least one metal selected from the group consisting of Ag, Cu, Ni, and Pb, a metal containing Au-Sn as a main component and containing less than 20% by weight of gold is laminated. The substrate for element soldering with the laminated structure of the formed solder layer is suitable for reflow soldering. Furthermore, the metal forming the solder layer contains Sn or In as the main component, the content of gold is less than 20% by weight, the Young's modulus at 25°C is less than 50GPa, and the substrate for element soldering with a melting point of less than 280°C has the following properties: Features: Even if the components are welded and used for a long time, the welded surface is difficult to be damaged.

本申请第二发明是元件焊接用基板的制造方法，其特征在于，在表面上焊接了金电极层的基板的其金电极层上，形成从Ag、Cu、Ni和Pb构成的组中选择的至少一种金属构成的金属层。在这种制造方法中，通过在形成了从Ag、Cu、Ni和Pb构成的组中选择的至少一种金属构成的金属层上，形成以Sn或In为主要成分并且金含量低于20重量％的金属构成的焊料层，也可以制造可适用于上述回流焊接的元件焊接用基板。The second invention of the present application is a method of manufacturing a substrate for component soldering, characterized in that, on the gold electrode layer of the substrate on which the gold electrode layer is soldered, a metal electrode selected from the group consisting of Ag, Cu, Ni, and Pb is formed. A metallic layer of at least one metal. In this manufacturing method, by forming a metal layer composed of at least one metal selected from the group consisting of Ag, Cu, Ni and Pb, forming a metal layer mainly composed of Sn or In and having a gold content of less than 20 wt. A solder layer composed of a metal of 10% can also be used to manufacture a substrate for component soldering that can be applied to the above-mentioned reflow soldering.

本申请第三发明是一种元件焊接用基板的制造方法，其特征在于，在可适用于上述回流焊接的元件焊接用基板的焊料层上，搭载带有电极的元件后，以使该电极接触所述焊料层，从而回流焊接。根据上述制造方法，例如可在低于280℃的低温下，对元件高精度高效率地焊接。The third invention of the present application is a method of manufacturing a substrate for component soldering, characterized in that, after mounting components with electrodes on the solder layer of the substrate for component soldering applicable to the above-mentioned reflow soldering, the electrodes are brought into contact with each other. The solder layer is thus reflow soldered. According to the above manufacturing method, for example, components can be soldered with high precision and high efficiency at a low temperature lower than 280°C.

本申请第四发明是按上述方法制造的元件焊接用基板。本申请第四发明的元件焊接用基板可长期稳定地使用。A fourth invention of the present application is a substrate for component soldering produced by the above method. The substrate for element soldering according to the fourth invention of the present application can be used stably for a long period of time.

附图说明Description of drawings

图1是Au-Sn合金状态图。Figure 1 is a state diagram of Au-Sn alloy.

图2是本发明的元件焊接用基板的代表性的剖面图。Fig. 2 is a representative cross-sectional view of the substrate for element bonding of the present invention.

附图中各标号具有下述含义。The symbols in the drawings have the following meanings.

100：元件焊接用基板100: Substrate for component soldering

200：表面形成有金电极层的基板200: A substrate with a gold electrode layer formed on the surface

201：氮化铝烧结体基板201: Aluminum nitride sintered substrate

202：以Ti为主要成分的第一衬底层202: the first substrate layer with Ti as the main component

203：以Pt为主要成分的第二衬底层203: the second substrate layer with Pt as the main component

204：金电极层204: gold electrode layer

300：阻挡层300: barrier layer

400：由以Sn或In为主要成分的并且金含量低于20重量％的金属构成的焊料层400: A solder layer composed of a metal mainly composed of Sn or In and having a gold content of less than 20% by weight

具体实施方式Detailed ways

本发明的元件焊接用基板具有在表面上形成金电极层的基板的该金电极层上叠层从Ag、Cu、Ni和Pb构成的组中选择的至少一种金属构成的金属层的叠层结构。这里，元件指具有可直接连接其他电气布线端子的电阻或电容器等电子部件和半导体元件。The element bonding substrate of the present invention has a substrate having a gold electrode layer formed on its surface, and a metal layer composed of at least one metal selected from the group consisting of Ag, Cu, Ni, and Pb is laminated on the gold electrode layer. structure. Here, an element refers to an electronic component such as a resistor or a capacitor that can be directly connected to another electrical wiring terminal, and a semiconductor element.

本发明的元件焊接用基板中使用的‘在表面上形成了金电极层的基板’只要是在其一部分表面或整个表面上形成了具有作为电极功能的金构成的层的基板就可以，没有特别限定。从焊接半导体元件使用时的高频介电损失少的观点来看，最好采用在氮化铝、铝、SiC、Si等陶瓷基板上通过金属镀敷形成了金电极的金属化基板。再有，在这些金属化基板中，如上述那样，金电极层一般直接或间接地形成牢固地焊接在陶瓷基板上的衬底金属层上，例如在陶瓷基板中，在铝清洁薄板上印刷钨或钼等高融点金属膏构成的电极图形，在将该图形与清洁薄板同时烧结后，根据需要将镍层形成为高融点金属层状，而且最好在其上形成金电极。此外，在以氮化铝为主要成分的陶瓷基板中，最好使用在氮化铝粉末中添加助烧结剂并成形后，在烧结过的基板表面上通过溅射法等形成基本上与电极图形相同形状的以钛为主要成分的金属层(第一衬底层)后，在该第一衬底层上同样通过溅射法等形成以铂为主要成分的第二衬底层，然后在其上通过溅射法等形成金电极层而获得的金属化基板。在本发明的元件焊接用基板中，从散热焊接元件使用时产生的热的散热特性良好的观点来看，最好采用上述那样获得的氮化铝系金属化基板。The "substrate on which a gold electrode layer is formed on the surface" used in the element bonding substrate of the present invention is not particularly limited as long as it is a substrate on which a layer made of gold having a function as an electrode is formed on a part of the surface or the entire surface. limited. From the viewpoint of less high-frequency dielectric loss when soldering semiconductor elements, it is preferable to use a metallized substrate in which a gold electrode is formed by metal plating on a ceramic substrate such as aluminum nitride, aluminum, SiC, or Si. Also, in these metallized substrates, as mentioned above, the gold electrode layer is generally formed directly or indirectly on the substrate metal layer firmly soldered on the ceramic substrate, for example, in the ceramic substrate, printed tungsten on the aluminum clean sheet or molybdenum or other high-melting-point metal paste, after sintering the pattern and the clean sheet at the same time, the nickel layer is formed into a high-melting-point metal layer as required, and gold electrodes are preferably formed thereon. In addition, in the ceramic substrate with aluminum nitride as the main component, it is best to add a sintering aid to the aluminum nitride powder and shape it, and then form a substantially similar electrode pattern on the surface of the sintered substrate by sputtering or the like. After the metal layer (first substrate layer) with titanium as the main component of the same shape, a second substrate layer with platinum as the main component is formed on the first substrate layer by sputtering, and then sputtered on it. A metallized substrate obtained by forming a gold electrode layer by laser method or the like. In the component soldering substrate of the present invention, it is preferable to use an aluminum nitride-based metallized substrate obtained as described above from the viewpoint of good heat dissipation characteristics of heat generated during the use of thermally soldered components.

本发明的元件焊接用基板需要在上述金电极层上形成从Ag、Cu、Ni和Pb构成的组中选择至少一种金属构成的金属层。通过形成这样的金属层，在该层上以高浓度锡的Au-Sn系焊料等低融点形成软焊料层并焊接的情况下，可在低温下附加焊接强度高的焊料。可认为该金属层具有与上述金属阻挡层同样的作用(因此，以下将该金属层简称为阻挡层)，而作为用于金属阻挡层的金属，在使用最一般的铂的情况下，在与使用的焊料金属种类的关系上，不能进行高强度的焊接。该阻挡层的厚度没有特别限定，但从价格性能比的观点来看，为0.2～5μm较好，特别是最好为1～3μm。如果该层的厚度低于0.2μm，则效果下降，而即使在5μm以上，其效果与1～3μm时大致相同。The substrate for element bonding of the present invention needs to form a metal layer composed of at least one metal selected from the group consisting of Ag, Cu, Ni, and Pb on the above-mentioned gold electrode layer. By forming such a metal layer, when forming a soft solder layer on the layer with a low melting point such as Au-Sn based solder with high concentration of tin and soldering, solder with high soldering strength can be added at low temperature. It can be considered that this metal layer has the same function as the above-mentioned metal barrier layer (henceforth, the metal layer will be simply referred to as a barrier layer hereinafter), and as the metal used for the metal barrier layer, in the case of using the most common platinum, it can be compared with Depending on the type of solder metal used, high-strength soldering cannot be performed. The thickness of the barrier layer is not particularly limited, but is preferably 0.2 to 5 μm, particularly preferably 1 to 3 μm, from the viewpoint of cost performance. If the thickness of this layer is less than 0.2 μm, the effect is reduced, but even if it is more than 5 μm, the effect is almost the same as that of 1 to 3 μm.

上述金属层(阻挡层)不限定于从Ag、Cu、Ni和Pb构成的组中选择至少一种金属构成的金属层，也可以是单一金属构成的金属层，或是由多种金属形成的合金或金属间化合物或固溶体，但从效果来看，最好是Ag构成的金属层。再有，阻挡层不需要覆盖金电极层的整个面，但金电极层的元件焊接部分或与焊料接触的部分最好至少用阻挡层覆盖。在上述金电极层上形成阻挡层的方法没有特别限定，例如可采用溅射法、离子镀敷、蒸镀法、CVD法、电镀法。The above-mentioned metal layer (barrier layer) is not limited to a metal layer composed of at least one metal selected from the group consisting of Ag, Cu, Ni, and Pb, and may also be a metal layer composed of a single metal, or formed of a plurality of metals Alloy or intermetallic compound or solid solution, but from the effect point of view, the metal layer composed of Ag is the best. In addition, the barrier layer does not need to cover the entire surface of the gold electrode layer, but it is preferable to cover at least the component soldering portion of the gold electrode layer or the portion in contact with the solder with the barrier layer. The method for forming the barrier layer on the gold electrode layer is not particularly limited, and for example, sputtering, ion plating, vapor deposition, CVD, and electroplating can be used.

本发明的元件焊接用基板在金电极层上形成了上述阻挡层的状态下，可在焊接时供给焊料并与元件焊接，但为了将元件高精度地焊接在规定的位置，最好仅在元件的焊接预定部位形成焊料层。通过形成这样方式的基板(以下也简称为焊接基板)，可以精密地控制元件的搭载位置，可容易地进行自动化容易的回流焊接。此时，焊料层上形成的焊料层用的焊料没有特别限定，由于所述焊料层的效果特别好，其本身比较软并且可进行低温下的焊接，所以最好使用含有以Sn或In为主要成分并且金含量低于20重量％、特别是低于10重量％的金属构成的焊料。如果具体地示例这样的焊料，可示例上述的高浓度锡的Au-Sn系焊料、100％的Sn焊料、Sn-Ag焊料、Sn-Pb焊料、Sn-Bi焊料、Sn-Sb焊料、Sn-In焊料、100％的In焊料、In-Au焊料(其中金含量低于20重量％)、In-Ag焊料、In-Bi焊料、In-Sb焊料、In-Zn焊料及将它们任意组合的焊料等。In the substrate for component soldering of the present invention, in the state where the above-mentioned barrier layer is formed on the gold electrode layer, solder can be supplied during soldering and soldered to the component, but in order to solder the component at a predetermined position with high precision, it is preferable to The solder layer is formed at the intended soldering position. By forming such a substrate (hereinafter also simply referred to as a solder substrate), the mounting position of components can be precisely controlled, and automatic and easy reflow soldering can be easily performed. At this time, the solder for the solder layer formed on the solder layer is not particularly limited. Since the effect of the solder layer is particularly good, it is relatively soft and can be soldered at low temperature, so it is best to use a solder containing mainly Sn or In. Composition and gold content of less than 20% by weight, especially less than 10% by weight of the metal solder. If such solder is specifically exemplified, the above-mentioned high-concentration tin Au-Sn solder, 100% Sn solder, Sn-Ag solder, Sn-Pb solder, Sn-Bi solder, Sn-Sb solder, Sn- In solder, 100% In solder, In-Au solder (in which the gold content is less than 20% by weight), In-Ag solder, In-Bi solder, In-Sb solder, In-Zn solder, and any combination thereof wait.

其中，从与元件焊接后的管芯共用试验的焊接强度最高的理由来说，最好采用Au-Sn系焊料。在本发明中，在上述那样的含有以Sn或In为主要成分并且金含量低于20重量％的金属构成的焊料中，从不易引起焊接使用上述那样的元件时温度变化造成的焊接部位的损坏的观点来看，最好采用融点低于280℃、特别是在235℃以下并且杨氏模量低于50GPa(25℃时)的金属构成的焊料。Among them, it is preferable to use Au-Sn-based solder because of the highest soldering strength in the die sharing test after soldering with components. In the present invention, in the above-mentioned solder containing Sn or In as the main component and consisting of a metal with a gold content of less than 20% by weight, it is never easy to cause damage to the soldered part caused by temperature changes when soldering the above-mentioned elements. From the point of view, it is better to use a solder made of a metal whose melting point is lower than 280°C, especially below 235°C, and whose Young's modulus is lower than 50GPa (at 25°C).

本发明的焊接基板的上述焊料层由单一组成的金属构成一层，而为了各层熔融混合时满足上述条件的组成，也可以由不同组成的金属构成的多层的叠层构成。该焊料层整体的厚度为1～10μm较好，更好为2～6μm。该层的厚度低于1μm时，由于焊料的绝对量少，所以存在不能获得充分的焊接强度的倾向，相反在形成超过10μm的厚度时，由于焊料量过多，所以有焊接后产生焊料遮挡元件的侧面或上表面(在半导体元件中为发光面)的不良情况。没有特别限定在上述阻挡层上形成上述焊料构成的层的方法，例如可采用溅射法、离子镀敷、蒸镀法、CVD法、电镀法。The above-mentioned solder layer of the solder substrate of the present invention is composed of a metal of a single composition, but may be composed of a multi-layer laminate of metals of different compositions so that the composition satisfies the above-mentioned conditions when the layers are melt-mixed. The overall thickness of the solder layer is preferably from 1 to 10 μm, more preferably from 2 to 6 μm. When the thickness of this layer is less than 1 μm, since the absolute amount of solder is small, there is a tendency that sufficient soldering strength cannot be obtained. On the contrary, when the thickness exceeds 10 μm, since the amount of solder is too large, there is a risk of solder masking after soldering. Defects on the side or upper surface (light-emitting surface in semiconductor elements). The method of forming the layer composed of the above-mentioned solder on the above-mentioned barrier layer is not particularly limited, and for example, sputtering, ion plating, vapor deposition, CVD, and electroplating can be used.

没有特别限定在本发明的元件焊接用基板上焊接半导体元件等元件的方法，可采用没有限定的公知的焊料附加法，但根据高效率地进行精度高的焊接的理由，最好在作为焊接基板的本发明的元件焊接用基板的焊料层上搭载具有电极的元件，以使该电极接触所述焊料层后进行回流焊接。再有，回流焊接(软融焊接)有以下方法：在基板的规定焊盘上或在部件电极或其两者上预先供给焊料，在将部件固定在基板上的规定位置后，将焊料熔化(流动)，进行部件和基板的焊接。在上述方法中，没有特别限定使焊料回流的方法，可采用使用回流传送带的方法、使用热板的方法、蒸汽回流法等。此外，加热温度或加热时间可根据使用的焊料种类来适当确定，在使用本发明的元件焊接用基板的情况下，由于没有损害使用的焊料的特性，所以例如在使用高浓度锡的Au-Sn系焊料时，可在低于280℃的低温下进行良好的焊接。The method of soldering elements such as semiconductor elements on the substrate for element soldering of the present invention is not particularly limited, and any known soldering method without limitation can be used, but for the sake of efficient and high-precision soldering, it is preferable to use a soldering substrate as a soldering substrate. In the component soldering substrate of the present invention, a component having an electrode is mounted on the solder layer, and reflow soldering is performed after the electrode is brought into contact with the solder layer. Furthermore, reflow soldering (reflow soldering) has a method in which solder is supplied in advance on a predetermined pad on a substrate or on a component electrode or both, and after the component is fixed at a predetermined position on the substrate, the solder is melted ( flow), for welding of parts and substrates. Among the methods described above, the method of reflowing the solder is not particularly limited, and a method using a reflow conveyor, a method using a hot plate, a steam reflow method, and the like can be employed. In addition, the heating temperature and heating time can be appropriately determined according to the type of solder used. In the case of using the substrate for element soldering of the present invention, since the characteristics of the solder used are not impaired, for example, Au-Sn using high-concentration tin When it is a solder, good soldering can be performed at a low temperature below 280°C.

再有，焊接的元件只要具有可通过焊料进行焊接的金属构成的电极就可以，没有特别限定。在一般的半导体元件中，上述电极大多用金构成。在对具有这样的金电极的元件焊接时，考虑了金电极的金原子扩散到焊料中，但如后述的实施例所示，由于在对具有金电极的元件焊接时也可获得良好的焊接强度，所以认为此时引起的扩散对焊接强度几乎不产生重大影响。但是，为了更好地防止这样的金原子的扩散，最好用从Ag、Cu、Ni和Pb构成的组选择至少一种金属、特别是Ag来覆盖与焊料接触的元件的电极表面。In addition, the element to be soldered is not particularly limited as long as it has an electrode made of a metal that can be soldered. In general semiconductor elements, the above-mentioned electrodes are often made of gold. When soldering components with such gold electrodes, it is considered that the gold atoms of the gold electrodes diffuse into the solder, but as shown in the examples described later, good soldering can also be obtained when soldering components with gold electrodes. Therefore, it is considered that the diffusion caused at this time hardly has a significant impact on the welding strength. However, in order to better prevent the diffusion of such gold atoms, it is preferable to cover the electrode surfaces of the components in contact with the solder with at least one metal selected from the group consisting of Ag, Cu, Ni and Pb, especially Ag.

实施例Example

以下，列举实施例和比较例，更详细地说明本发明，但本发明不限于这些实施例。Hereinafter, although an Example and a comparative example are given and this invention is demonstrated in more detail, this invention is not limited to these Examples.

实施例1Example 1

如下那样制作图2所示结构的元件焊接用基板。再有，图2是本发明的有代表性的元件焊接用基板100的剖面图，具有以下结构：在氮化铝烧结体基板201上，在依次叠层以Ti为主要成分的第一衬底层202、以铂为主要成分的第二衬底层203、以及金电极层204的基板200的金电极层上，叠层银等金属构成的阻挡层300和Sn系或In系的并且金含量低于20重量％的金属构成的焊料层400。A substrate for element soldering having the structure shown in FIG. 2 was fabricated as follows. 2 is a cross-sectional view of a typical element bonding substrate 100 of the present invention, which has the following structure: on an aluminum nitride sintered body substrate 201, a first underlayer whose main component is Ti is sequentially laminated. 202. On the gold electrode layer of the substrate 200, the second substrate layer 203 with platinum as the main component, and the gold electrode layer 204, a barrier layer 300 made of metal such as silver and a Sn-based or In-based barrier layer 300 with a gold content lower than The solder layer 400 is composed of 20% by weight metal.

首先，在氮化铝烧结体基板(50.8mm×50.8mm×0.3mmt(株)トクャマ制)的表面上，使用溅射装置，通过溅射法依次形成厚度为0.06μm的以Ti为主要成分的第一衬底层、厚度为0.2μm的以铂为主要成分的第二衬底层、以及厚度为0.6μm的金电极层。接着，使用真空镀敷装置，在上述金电极层上，形成厚度2μm的Ag膜构成的阻挡层，接着，作为靶，通过使用Au和Sn的同时镀敷法，形成金含量为10重量％的Au-Sn合金(融点217℃，杨氏模量为45.0GPa(25℃时))构成的厚度5μm的阻挡层，制作本发明的元件焊接用基板。接着，在这样制作的元件焊接用基板的焊料层上搭载具有Au电极的半导体元件，使用管芯连接装置在250℃下进行30秒焊接，制作元件焊接基板。First, on the surface of an aluminum nitride sintered body substrate (50.8mm×50.8mm×0.3mmt, manufactured by TOKAMA CO., LTD.), using a sputtering device, a 0.06μm-thick layer mainly composed of Ti was sequentially formed by the sputtering method. The first substrate layer, the second substrate layer with a thickness of 0.2 μm mainly composed of platinum, and the gold electrode layer with a thickness of 0.6 μm. Next, a barrier layer composed of an Ag film with a thickness of 2 μm was formed on the above-mentioned gold electrode layer using a vacuum plating device, and then, as a target, a gold layer with a gold content of 10% by weight was formed by using a simultaneous plating method of Au and Sn. A barrier layer with a thickness of 5 μm made of an Au-Sn alloy (melting point 217° C., Young’s modulus 45.0 GPa (at 25° C.)) was used to produce the element soldering substrate of the present invention. Next, a semiconductor element having an Au electrode was mounted on the solder layer of the substrate for element bonding prepared in this way, and soldering was performed at 250° C. for 30 seconds using a die-attach device to prepare an element bonding substrate.

同样地制作10个元件焊接基板，通过管芯共用测定器(1MADA社制)测定焊接强度时，平均焊接强度为2.8kgf/mm2，玻璃模式全部在焊料内(焊料层被破坏剥离，而没有各层间的剥离)。In the same way, 10 component soldering boards were produced, and when the soldering strength was measured with a die-common measuring device (manufactured by 1MADA Co., Ltd.), the average soldering strength was 2.8kgf/mm 2 , and all the glass patterns were inside the solder (the solder layer was destroyed and peeled off, and there was no peeling between layers).

实施例2Example 2

作为靶，除了通过使用In(融点156℃，杨氏模量为12.7GPa(25℃时))的镀敷法来形成厚度5μm的阻挡层以外，与实施例1同样，制作元件焊接用基板，除了焊接温度为210℃以外，与实施例1同样，制作元件焊接基板。同样制作10个元件焊接基板，与实施例1同样，在测定焊接强度时，平均焊接强度为2.5kgf/mm2，剥离模式全部在焊料内。As a target, except that a barrier layer with a thickness of 5 μm was formed by a plating method using In (melting point 156° C., Young’s modulus 12.7 GPa (at 25° C.)), a substrate for element soldering was produced in the same manner as in Example 1. An element soldering substrate was produced in the same manner as in Example 1 except that the soldering temperature was 210°C. Similarly, 10 component soldering boards were produced, and when the soldering strength was measured as in Example 1, the average soldering strength was 2.5 kgf/mm 2 , and all the peeling modes were within the solder.

实施例3Example 3

除了在实施例1中将阻挡层的材质从Ag改变为表1所示的金属以外，与实施例1同样，制作元件焊接用基板和元件焊接基板，与实施例1同样，测定焊接强度。其结果同时示于表1。In Example 1, except that the material of the barrier layer was changed from Ag to the metal shown in Table 1, a substrate for element bonding and an element bonding substrate were produced in the same manner as in Example 1, and the bonding strength was measured in the same manner as in Example 1. The results are also shown in Table 1.

实施例4Example 4

除了在实施例1中将阻挡层的膜厚改变为表1所示的膜厚以外，与实施例1同样，制作元件焊接用基板和元件焊接基板，与实施例1同样，测定焊接强度。其结果同时示于表1。In Example 1, except that the film thickness of the barrier layer was changed to the film thickness shown in Table 1, in the same manner as in Example 1, a substrate for element bonding and an element bonding substrate were produced, and in the same manner as in Example 1, the bonding strength was measured. The results are also shown in Table 1.

实施例5Example 5

除了在实施例1中将阻挡层的膜厚改变为表1所示的膜厚以外，与实施例1同样，制作元件焊接用基板和元件焊接基板，与实施例1同样，测定焊接强度。其结果同时示于表1。In Example 1, except that the film thickness of the barrier layer was changed to the film thickness shown in Table 1, in the same manner as in Example 1, a substrate for element bonding and an element bonding substrate were produced, and in the same manner as in Example 1, the bonding strength was measured. The results are also shown in Table 1.

比较例1Comparative example 1

在实施例1中，不设置阻挡层，其他与实施例同样，制作元件焊接用基板和元件焊接基板，测定焊接强度。其结果同时示于表1。如表1所示，在不设置阻挡层时，平均焊接强度为0.8kgf/mm2。In Example 1, the barrier layer was not provided, and other than the same as in the examples, a substrate for element bonding and an element bonding substrate were produced, and the bonding strength was measured. The results are also shown in Table 1. As shown in Table 1, when no barrier layer was provided, the average welding strength was 0.8 kgf/mm 2 .

比较例2Comparative example 2

在实施例1中，将阻挡层的材质从Ag改变为Pt，其他与实施例1同样，制作元件焊接用基板和元件焊接基板，测定焊接强度。其结果同时示于表1。如表1所示，即使设置阻挡层，而其材质不是本发明特定的金属时，平均焊接强度仅为1.4kgf/mm2。In Example 1, the material of the barrier layer was changed from Ag to Pt. In the same manner as in Example 1, an element soldering substrate and an element soldering substrate were produced, and the soldering strength was measured. The results are also shown in Table 1. As shown in Table 1, even if the barrier layer is provided, the average welding strength is only 1.4kgf/mm 2 when the material is not the metal specified in the present invention.

表1   焊料种类 焊料层的膜厚(μm) 阻挡金属 阻挡层的膜厚(μm) 平均焊接强度(kgf/mm2 )   剥离模式 实施例1   Au10-Sn     5     Ag     2     2.8   焊料内 实施例2   In100％     5     Ag     2     2.5   焊料内 实施例3   Au10-Sn     5     Cu     2     2.4   焊料内   Au10-Sn     5     Ni     2     2.3   焊料内   Au10-Sn     5     Pb     2     2.5   焊料内 实施例4   Au10-Sn     2     Ag     2     2.1   焊料内   Au10-Sn     3     Ag     2     2.4   焊料内   Au10-Sn     6     Ag     2     2.7   焊料内   Au10-Sn     10     Ag     2     3.1   焊料内 实施例5   Au10-Sn     5     Ag     1     2.6   焊料内   Au10-Sn     5     Ag     3     2.5   焊料内   Au10-Sn     5     Ag     5     2.7   焊料内 比较例1   Au10-Sn     5     无     2     0.8   半导体元件-焊料层 比较例2   Au10-Sn     5     铂     2     1.4   半导体元件-焊料层 Table 1 Solder type Film thickness of solder layer (μm) barrier metal Film thickness of barrier layer (μm) Average welding strength (kgf/mm 2 ) peel mode Example 1 Au10-Sn 5 Ag 2 2.8 inside the solder Example 2 In100% 5 Ag 2 2.5 inside the solder Example 3 Au10-Sn 5 Cu 2 2.4 inside the solder Au10-Sn 5 Ni 2 2.3 inside the solder Au10-Sn 5 Pb 2 2.5 inside the solder Example 4 Au10-Sn 2 Ag 2 2.1 inside the solder Au10-Sn 3 Ag 2 2.4 inside the solder Au10-Sn 6 Ag 2 2.7 inside the solder Au10-Sn 10 Ag 2 3.1 inside the solder Example 5 Au10-Sn 5 Ag 1 2.6 inside the solder Au10-Sn 5 Ag 3 2.5 inside the solder Au10-Sn 5 Ag 5 2.7 inside the solder Comparative example 1 Au10-Sn 5 none 2 0.8 Semiconductor components - solder layer Comparative example 2 Au10-Sn 5 platinum 2 1.4 Semiconductor components - solder layer

Au10-Sn：金含有量为10重量％的Au-Sn合金Au10-Sn: Au-Sn alloy with a gold content of 10% by weight

如以上那样，通过使用本发明的元件焊接用基板，在表面上形成了金电极的基板的金电极上，使用高浓度锡的Au-Sn系焊料那样的融点低、柔软的焊料，可在低温下高焊接强度地焊接半导体元件。而且，这样焊接的本发明的元件焊接基板即使使用时的温度差增大，也可以使焊接部位不被破坏，长期稳定使用。特别是作为基板，使用在表面上形成了金电极的以氮化铝为主要成分的陶瓷基板，除了这样的特长以外，高频介电损失也很小，同时还具有散热使用时产生的热的散热特性良好的特长，是非常良好的元件焊接基板。As above, by using the substrate for element soldering of the present invention, on the gold electrode of the substrate on which the gold electrode is formed on the surface, using a low melting point and soft solder such as Au-Sn based solder with a high concentration of tin, it can be used at low temperature. Solder semiconductor components with high solder strength. Furthermore, even if the temperature difference during use increases, the element soldering board of the present invention soldered in this way can be stably used for a long period of time without damaging the soldered portion. In particular, as the substrate, a ceramic substrate mainly composed of aluminum nitride with gold electrodes formed on the surface is used. In addition to this feature, the high-frequency dielectric loss is also small, and it also has the ability to dissipate heat generated during use. It is a very good substrate for component soldering due to its good heat dissipation characteristics.

Claims (9)

1. substrate use in element welding, it is characterized in that, has the laminated construction of the metal level of at least a metal formation that this gold electrode layer superimposed layer of the substrate that forms the gold electrode layer from the teeth outwards selects from the group that Ag, Cu, Ni and Pb constitute.
2. element welding substrate as claimed in claim 1, wherein, the substrate that forms the gold electrode layer on the surface is to be on the ceramic substrate of main component with the aluminium nitride, and lamination is first substrate layer of main component with Ti, is second substrate layer of main component and the metallized substrate of the electrode layer that gold constitutes with Pt successively.
3. substrate is used in element welding as claimed in claim 1, and wherein, the metal layer thickness that at least a metal of selecting from the group that Ag, Cu, Ni and Pb constitute constitutes is 0.2～5 μ m.
4. element welding substrate as claimed in claim 1 or 2, wherein, on the metal level that at least a metal of selecting from the group that Ag, Cu, Ni and Pb constitute constitutes, also having lamination is the laminated construction that main component and gold content are lower than the solder layer that the metal of 20 weight % constitutes to contain Sn or In.
5. substrate use in element as claimed in claim 4 welding, wherein, the formation solder layer to contain with Sn or In be that metal that main component and gold content the are lower than 20 weight % Young's modulus when being 25 ℃ is lower than 50GPa, and melting point is lower than 280 ℃ metal.
6. method of making claim 1 or the welding of 2 described elements with substrates, it is characterized in that, combine from the teeth outwards on this gold electrode layer of substrate of gold electrode layer, form the metal level that at least a metal selected constitutes from the group that Ag, Cu, Ni and Pb constitute.
7. method as claimed in claim 6, wherein, on the metal level that has formed at least a metal formation of selecting from the group that Ag, Cu, Ni and Pb constitute, then forming with Sn or In is the solder layer that main component and gold content are lower than the metal formation of 20 weight %.
8. an element welds the manufacture method of using substrate, it is characterized in that, uses on the solder layer of substrate in claim 4 or 5 described elements welding, carries the element that has electrode, so that this electrode contacts described solder layer, follows and adds reflux solder.
9. substrate is used in an element welding, is manufactured by the described method of claim 8.
CNB028083644A 2001-06-14 2002-05-29 Substrate for use in joining element Expired - Fee Related CN1316605C (en)

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TW548805B (en) 2003-08-21

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