CN104668811A - Substrate with a brazing material and method for producing substrate with a brazing material - Google Patents
Substrate with a brazing material and method for producing substrate with a brazing material Download PDFInfo
- Publication number
- CN104668811A CN104668811A CN201410578350.6A CN201410578350A CN104668811A CN 104668811 A CN104668811 A CN 104668811A CN 201410578350 A CN201410578350 A CN 201410578350A CN 104668811 A CN104668811 A CN 104668811A
- Authority
- CN
- China
- Prior art keywords
- solder
- base material
- quality ratio
- surface region
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 175
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 238000005219 brazing Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 title abstract 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 52
- 229910052709 silver Inorganic materials 0.000 claims abstract description 48
- 229910000679 solder Inorganic materials 0.000 claims description 378
- 238000007789 sealing Methods 0.000 claims description 91
- 238000001039 wet etching Methods 0.000 claims description 58
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 22
- 238000000227 grinding Methods 0.000 claims description 20
- 239000002253 acid Substances 0.000 claims description 19
- 238000005538 encapsulation Methods 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 13
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 description 150
- 230000007797 corrosion Effects 0.000 description 87
- 238000005260 corrosion Methods 0.000 description 87
- 239000000047 product Substances 0.000 description 32
- 230000000052 comparative effect Effects 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 25
- 239000000243 solution Substances 0.000 description 23
- 238000012360 testing method Methods 0.000 description 13
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 12
- 238000005554 pickling Methods 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- 229910000881 Cu alloy Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 10
- 238000003466 welding Methods 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 238000003475 lamination Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000033228 biological regulation Effects 0.000 description 6
- 229960004643 cupric oxide Drugs 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 229910017755 Cu-Sn Inorganic materials 0.000 description 5
- 229910017927 Cu—Sn Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910001923 silver oxide Inorganic materials 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 150000001450 anions Chemical class 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000009958 sewing Methods 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910017709 Ni Co Inorganic materials 0.000 description 3
- 229910003267 Ni-Co Inorganic materials 0.000 description 3
- 229910003262 Ni‐Co Inorganic materials 0.000 description 3
- 238000003490 calendering Methods 0.000 description 3
- 239000011573 trace mineral Substances 0.000 description 3
- 235000013619 trace mineral Nutrition 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 150000001767 cationic compounds Chemical class 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000010200 validation analysis Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
- C22C5/08—Alloys based on silver with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Abstract
A substrate with a brazing material comprises a substrate body and the brazing material at least containing Ag and Cu and formed on the substrate body. In the brazing material, a surface vicinity area where the containing mass ratio of Ag relative to the total of Ag and Cu is above 0.95 is 1.3 microns or more than 1.3 microns deep in the depth direction from the surface of the brazing material.
Description
Technical field
The present invention relates to the manufacture method of a kind of base material with solder and the base material with solder, particularly relate to a kind of possess solder at least containing Ag and Cu with solder base material and the manufacture method of base material with this solder.
Background technology
At present, the base material with solder of the solder at least containing Ag (silver) or Cu (copper) has been known to possess.The base material with solder is like this such as open by Japanese Unexamined Patent Publication 2006-49595 publication.
In Japanese Unexamined Patent Publication 2006-49595 publication, disclose a kind of clad material, comprise the base material be made up of metal and the solder layer that can engage with the surface of base material be made up of Ag-Cu-Sn (tin) alloy, Ag-Cu-In (indium) alloy or Ag-Cu-Zn (zinc) alloy.
But, solder clad material described in Japanese Unexamined Patent Publication 2006-49595 publication, when long-term preservation or situation about being configured under hot and humid environment inferior, ionization tendency contained in solder layer can react with the corrosion factor of the anion of the oxygen comprised in air and moisture, chloride ion etc. etc. higher than the element of Ag and corrode.Particularly, at least containing in the solder of Ag and Cu, compared with Ag, Cu, the shared ratio (quality %) such as other Sn is little, therefore generates the corrosion product that ionization tendency causes higher than the Cu of Ag in a large number on the surface of solder layer.Therefore, by the clad material melting at the corrosion product by having Cu system on surface by base material and other components bonding, when sealing other parts, the state that corrosion product mixing exists is formed at junction surface, increasing because engaging the bad fraction defective of sewing caused, namely having sealing to reduce such problem.
Summary of the invention
The present invention makes to solve above-mentioned problem, an object of this invention be to provide a kind of can suppress the Surface Creation corrosion product of the solder at least containing Ag and Cu the base material with solder and should with the manufacture method of the base material of solder.
The present inventor conducts in-depth research, and found that, by be conceived to the Ag of solder surface and near zone thereof containing quality ratio, above-mentioned problem can be solved.
Namely, the base material with solder of the first aspect of this invention, possess base material and be formed on base material, at least containing Ag and Cu solder, in solder surface, Ag is relative to the degree of depth being formed to more than 1.3 μm containing the quality ratio near-surface region that is more than 0.95 from the surface of solder to depth direction of the total of Ag and Cu.In addition, near-surface region comprise solder surface and from the surface of solder to depth direction until two of the region of specific length aspects.
The base material with solder in the first aspect of this invention, as mentioned above, possessing Ag relative to the ratio of the total of Ag and Cu is the near-surface region of more than 0.95.Thus easily with the near-surface region of the solder reacted with external corrosion factor, ionization tendency lower than Cu and the high Ag of corrosion resistance become enough large containing quality ratio, therefore, on the contrary, ionization tendency higher than Ag and the low Cu of corrosion resistance become enough little containing quality ratio, its result, fully can suppress the reaction that external corrosion factor and Cu occur at solder surface near zone.Further, the base material with solder of the first aspect of this invention is from the surface of solder to depth direction until the degree of depth of more than 1.3 μm possesses near-surface region.Thereby, it is possible to be formed as the state of the impact not being vulnerable to external corrosion factor from the surface of solder to the sufficient degree of depth, therefore, it is possible to suppress external corrosion factor and the reaction of Cu in the near-surface region of solder.Thereby, it is possible to suppress to generate corrosion product in the near-surface region of solder.In addition, these effects are proven by experiment.Its result, the deteriorated appearance of the base material with solder that the variable color etc. caused due to corrosion product can be suppressed to cause, and, when this base material with solder is used as the seal member that electronic unit storage encapsulates, situation about existing in the mixing of junction surface corrosion product can be suppressed, therefore, it is possible to suppress because engaging the bad increase of sewing fraction defective caused, its result, can suppress the reduction of the sealing of the base material (seal member) with solder.In addition, as long as have the base material with solder of above-mentioned formation, in interior zone beyond the near-surface region of solder, Ag there is no need to be more than 0.95 containing quality ratio, therefore, it is possible to suppress the Ag content of solder self, its result, the fusing point of solder can be suppressed to improve, and the use amount of the Ag as noble metal can be reduced.
Above-mentioned first aspect with in the base material of solder, preferably in solder Ag relative to Ag and Cu total containing quality ratio (i.e. Ag/ (Ag+Cu)) be greater than Cu relative to Ag and Cu total contain quality ratio (i.e. Cu/ (Ag+Cu)).Such formation, such as, preferentially removing the Cu in the near-surface region of solder, make the Ag of near-surface region containing quality ratio be more than 0.95 time, by the Ag of the solder before making preferentially to remove Cu contain quality ratio be greater than Cu containing quality ratio, what easily can be formed as the Ag of the near-surface region making solder is more than 0.95 containing quality ratio.Here, in order to improve Ag in the near-surface region of solder containing quality ratio, Ag relative to Ag and Cu total containing quality ratio be Cu relative to Ag and Cu more than 1.5 times containing quality ratio of total time, easy raising Ag's contains quality ratio, so preferably, be more preferably more than 2 times, if reach more than 4 times, then that extremely easily can improve Ag contains quality ratio.
In solder in above-mentioned first aspect, it is more than 0.64 that the Ag in the entirety of preferred solder contains quality ratio.Such formation, such as, preferentially removing the Cu in the near-surface region of solder, make the Ag of near-surface region containing quality ratio be more than 0.95 time, by making the Ag's of the near-surface region of solder to be more than 0.95 containing quality ratio, can easily be formed.
In solder in above-mentioned first aspect, it is less than 0.85 that the Ag in the entirety of preferred solder contains quality ratio.Such formation, can suppress that Ag's in the entirety of solder is too high containing quality ratio, therefore, it is possible to suppress the fusing point of the entirety of solder too high.Thereby, it is possible to suppress brazing temperature to uprise.
Above-mentioned first aspect with in the base material of solder, be preferably made up of the clad material being bonded with each other by solder and base material and being formed.Such formation, by solder and base material being engaged, can suppress corrosion factor to invade the interface of solder and base material.Thus, can not only suppress to generate corrosion product at solder surface, and the Interface debond corrosion product at solder and base material can be suppressed, therefore, it is possible to suppress solder to be separated with base material.Its result, can improve the reliability of the base material with solder further.
Above-mentioned first aspect with in the base material of solder, preferably as housing electronic parts encapsulation sealing ring use.Like this as sealing ring use with in the base material of solder, by the degree of depth being formed to more than 1.3 μm containing the quality ratio top layer near zone that is more than 0.95 from surface to depth direction by Ag, sealing ring can be suppressed at the near-surface region of solder generation corrosion product.
Above-mentioned first aspect with in the base material of solder, preferably as housing electronic parts encapsulation lid component.Like this as lid component use with in the base material of solder, by the degree of depth being formed to more than 1.3 μm containing the quality ratio top layer near zone that is more than 0.95 from surface to depth direction by Ag, lid component can be suppressed at the near-surface region of solder generation corrosion product.
Above-mentioned first aspect with in the base material of solder, preferred solder contains Ag, Cu and Sn, and the containing ratio of the Sn in solder is below 6 quality %.Such formation, by the Sn contained in solder, can easily suppress brazing temperature to improve.In addition, by making the containing ratio of Sn in solder be below 6 quality %, processability when making the base material with solder can be suppressed to reduce.Particularly when solder and base material are engaged making clad material, calendering can be suppressed to become difficulty.
Above-mentioned first aspect with in the base material of solder, preferred surface near zone is formed throughout the surface of whole solder.Such formation, can suppress to generate corrosion product throughout the whole surface of solder.
Above-mentioned first aspect with in the base material of solder, preferred surface near zone is formed to the degree of depth of more than 1.5 μm from the surface of solder to depth direction.Such formation, can be formed as the state of the impact not being subject to external corrosion factor from the surface of solder to the sufficient degree of depth, therefore, it is possible to suppress external corrosion factor and Cu in the reaction of solder surface near zone further.Thereby, it is possible to suppress further to generate corrosion product in the near-surface region of solder.
Now, preferred surface near zone is formed to the degree of depth of more than 2.0 μm from the surface of solder to depth direction.Such formation, can be formed as the state of the impact not being subject to external corrosion factor from the surface of solder to the sufficient degree of depth, therefore, it is possible to effectively suppress external corrosion factor and Cu in the reaction of solder surface near zone.Thereby, it is possible to effectively suppress to generate corrosion product in the near-surface region of solder.
Above-mentioned first aspect with in the base material of solder, preferred surface near zone is formed to the degree of depth of less than 4.0 μm from the surface of solder to depth direction.Such formation, can suppress Ag to increase the degree of depth of the near-surface region causing fusing point high containing quality ratio excessive, therefore, it is possible to suppress the fusing point of solder entirety excessively to uprise.Thereby, it is possible to suppress brazing temperature to uprise.
Above-mentioned first aspect with in the base material of solder, be preferably formed with the stress-buffer layer containing Cu in the solder side of base material.Such formation, by having the stress-buffer layer containing Cu of flexibility, the thermal stress that the thermal expansion difference that can absorb solder and base material causes or deformation, therefore, it is possible to suppress to peel off near welding position (brazed portions).In addition, by making stress-buffer layer contain Cu, the heat conductivity of stress-buffer layer can be made to improve, therefore, it is possible to transmit the heat near welding position efficiently.Thereby, it is possible to the thermal stress near suppression welding position becomes large.
The manufacture method of the base material with solder of the second aspect of this invention possesses the solder at least containing Ag and Cu to being formed on base material, use the operation of carrying out wet etching containing the preferential etching solution removing the preferential remover of Cu of Cu, in wet etching, the preferential remover of the Cu in etching solution is utilized preferentially to remove Cu in the near-surface region of solder, thus, the degree of depth more than from solder surface to depth direction to 1.3 μm formed Ag relative to Ag and Cu total be the near-surface region of more than 0.95 containing quality ratio.
In the manufacture method of the base material with solder of the second aspect of this invention, as mentioned above, formed Ag relative to Ag and Cu total containing quality ratio be the near-surface region of more than 0.95.Thus, easily and in the near-surface region of solder that reacts of external corrosion factor, ionization tendency is lower than Cu and the high Ag of corrosion resistance enough large containing quality ratio, therefore, on the contrary, ionization tendency is higher than Ag and the low Cu of corrosion resistance enough little containing quality ratio, and its result, fully can suppress external corrosion factor and the reaction of Cu in the near-surface region of solder.Further, in the manufacture method of the base material with solder of the second aspect of this invention, from the surface of solder to depth direction until the degree of depth of more than 1.3 μm possesses near-surface region.Thereby, it is possible to be formed as the state of the impact not being vulnerable to external corrosion factor from the surface of solder to the sufficient degree of depth, therefore, it is possible to suppress external corrosion factor and the reaction of Cu in the near-surface region of solder.Thereby, it is possible to suppress to generate corrosion product in the near-surface region of solder.Its result, the deteriorated appearance of the base material with solder that the variable color etc. caused due to corrosion product can be suppressed to cause, and, when this base material with solder is used as the seal member that electronic unit storage encapsulates, situation about existing in the mixing of junction surface corrosion product can be suppressed, therefore, it is possible to suppress because engaging the bad increase of sewing fraction defective caused, its result, can suppress the reduction of the sealing of the base material (seal member) with solder.In addition, as long as the manufacture method of the above-mentioned base material with solder, in interior zone beyond the near-surface region of solder, Ag there is no need to be more than 0.95 containing quality ratio, therefore, it is possible to suppress the Ag content of solder self, its result, the fusing point of solder can be suppressed to improve, and the use amount of the Ag as noble metal can be reduced.In addition, in wet etching, utilize the preferential remover of the Cu in etching solution preferentially to remove the Cu of the near-surface region of solder, thereby, it is possible to corresponding to the part of removed Cu, easily increase the Ag of the near-surface region of solder containing quality ratio.
In the manufacture method of the base material with solder of above-mentioned second aspect, the preferential remover of preferred Cu contains strong acid.Such formation, ionization tendency can be made easily to dissolve in strong acid higher than the Cu compound of the oxide of the Cu of Ag etc., and on the other hand, ionization tendency is difficult to dissolve in strong acid lower than the Ag of Cu, therefore, it is possible to reliably preferentially remove Cu from the near-surface region of solder.
Now, the preferential remover of preferred Cu contains the sulfuric acid as strong acid.Such formation, generate the sulfate anion as the anion of sulfuric acid and the cationic compound of Cu (copper sulphate), the compound generated is water miscible, namely solvable in etching solution, therefore, it is possible to utilize the Cu compound etc. of the oxide of the Cu in the surface of strong acid dissolution solder or near-surface region etc., and the base material that can suppress the precipitation of Cu compound in etching solution and be attached to solder.Thus, there is no need to arrange the operation removing the precipitate of attachment from the base material with solder, therefore, it is possible to simplify the manufacturing process with the base material of solder.
In the manufacture method of the base material with solder of above-mentioned second aspect, preferably before the operation of carrying out wet etching, also possess and use grinding-material to carry out the engineering of grinding, such as, the operation of cylinder grinding etc.Such formation, such as, by utilize machining such as compacting stamping-out etc. to be formed with in the base material of solder, can remove in advance and be difficult to the burr removed or foreign matter etc. by wet etching, therefore, as long as be adjusted to the treatment conditions that the near-surface region at solder can be formed as obtaining the state of the regulation of effect of the present invention in wet etching, its result, can simplify the manufacturing process of the base material with solder.
In the manufacture method of the base material with solder of above-mentioned second aspect, in preferred solder Ag relative to Ag and Cu total containing quality ratio be greater than Cu relative to Ag and Cu total containing quality ratio.Such formation, can easily make the quality ratio that contains of the Ag of the near-surface region of solder be formed as more than 0.95.
In the manufacture method of the base material with solder of above-mentioned second aspect, it is more than 0.64 that the Ag in preferred solder entirety contains quality ratio.Such formation, can easily make the quality ratio that contains of the Ag of the near-surface region of solder be formed as more than 0.95.
In the manufacture method of the base material with solder of above-mentioned second aspect, preferably before the operation of carrying out wet etching, also possess by base material and solder are bonded with each other and form the operation of clad material.Such formation, by by base material and solder bonds, can suppress to invade in the interfacial corrosion factor of solder and base material.Thus, can not only suppress to generate corrosion product at solder surface, and the Interface debond corrosion product at solder and base material can be suppressed, therefore, it is possible to suppress solder to be separated with base material.Its result, can improve the reliability of the base material with solder.
Accompanying drawing explanation
Fig. 1 is the top view of the sealing ring representing an embodiment of the invention.
Fig. 2 is the profile of the structure of the sealing ring of the 300-300 represented along Fig. 1.
Fig. 3 is the expansion profile amplifying the near-surface region representing the sealing ring of an embodiment of the invention or the solder of lid component.
Fig. 4 is the profile of the electronic unit storage encapsulation representing the sealing ring using an embodiment of the invention.
Fig. 5 is the profile representing the sealing ring of the sealing ring of an embodiment of the invention after punch press process and before cylinder grinding.
Fig. 6 is the profile representing the sealing ring of the sealing ring of an embodiment of the invention after cylinder grinding and before wet etching.
Fig. 7 is the top view of the lid component representing an embodiment of the invention.
Fig. 8 is the profile of the electronic unit storage encapsulation representing the lid component using an embodiment of the invention.
Fig. 9 is the table of the measurement result of the base material with solder (sealing ring) in order to confirm the solder (silver solder) possessing 85Ag-Cu alloy that effect of the present invention is carried out etc.
Figure 10 is the table of the measurement result of the base material with solder (lid component) in order to confirm the solder (silver solder) possessing 85Ag-Cu alloy that effect of the present invention is carried out etc.
Figure 11 is the table of the measurement result of the base material with solder (lid component) in order to confirm the solder (silver solder) possessing 72Ag-Cu alloy that effect of the present invention is carried out etc.
Figure 12 is the table of the measurement result of the base material with solder (lid component) in order to confirm the solder (silver solder) possessing 67Ag-Cu-Sn alloy that effect of the present invention is carried out etc.
Detailed description of the invention
Below, based on accompanying drawing, embodiment the present invention specialized is described.
First, with reference to Fig. 1 ~ Fig. 3, the structure of the sealing ring 1 be made up of the base material 10 being provided with solder 20 in an embodiment of the invention is described.In addition, sealing ring 1 is an example of " base material with solder " of the present invention.
The sealing ring 1 of an embodiment of the invention as shown in Figure 1, is formed as rectangular frame-shaped (ring-type) when overlooking.In addition, sealing ring 1 as shown in Figure 2, comprise the base material 10 being configured at upside (Z1 side) and the solder 20 being configured at downside (Z2 side), four angles (forming four angles of the section of the roughly quadrangle shown in Fig. 2) of sealing ring 1 are formed as R planar.In addition, the thickness t1 of the Z-direction of base material 10 is more than about 100 μm, less than about 130 μm, and the thickness t2 of the Z-direction of solder 20 is more than about 5 μm, less than about 30 μm.
From the upper surface 1a of sealing ring 1 to the interface (to Z2 direction) of base material 10 and solder 20, base material 10 is formed with this order lamination by the Cu layer 13 mainly comprising the Ni layer 11 of Ni, intermediate layer 12 and mainly comprise Cu.In addition, intermediate layer 12 mainly comprises the Ni of about 30 quality %, Co and Fe of about 17 quality %, is made up of the Fe-Ni-Co alloy with low thermal coefficient of expansion.In addition, Cu layer 13 is examples of " stress-buffer layer " of the present invention.
Ni layer 11 has the function of the corrosion resistance of the upper surface 1a improving sealing ring 1.Intermediate layer 12, owing to having low thermal coefficient of expansion, has the function reduced with the thermal expansion difference of the pottery of the base 101 of the encapsulation 100 of formation housing electronic parts described later.Cu layer 13 has flexibility, has the function absorbing thermal stress that the thermal expansion difference because of intermediate layer 12 and base 101 causes or deformation.In addition, Cu layer 13 is good due to heat conductivity, by transmitting the heat of welding (soldering) near sites efficiently, having and suppressing the thermal stress near welding position to become large function.
Solder 20 is made up of the solder mainly containing Ag and Cu.In addition, as the element forming solder 20, except Ag and Cu, can also containing more than any one in Sn, Al, Zn, Cd, P and Mn.In addition, the solder (silver solder) also containing Sn except Ag and Cu is owing to can reduce the solidus of solder 20, therefore, it is possible to reduction brazing temperature.Here, when being used in solder (silver solder) containing Sn in solder 20, in order to calendering in joint when suppressing the clad material stated after fabrication becomes difficulty, preferably contain Sn with below about 6 quality %.
In addition, in the entirety (region of the both sides of near-surface region 21 described later and interior zone 22 of solder 20, with reference to Fig. 3) in, be formed as Ag relative to Ag and Cu total containing quality ratio (i.e. Ag/ (Ag+Cu)) be greater than Cu relative to Ag and Cu total contain quality ratio (i.e. Cu/ (Ag+Cu)).That is, what be formed as Ag is greater than 0.5 containing quality ratio.In addition, the Ag's in the entirety of solder 20 is preferably approximately more than 0.64 containing quality ratio.In addition, form in the silver solder of solder 20, the Ag in the entirety of solder 20 is preferably less than 0.85 containing quality ratio.Here, Ag contain quality ratio in entirety be more than 0.95 metal be in general silver 950 or pure Ag (silver 1000), their fusing point is more than about 930 DEG C.That is, because fusing point is too high, silver 950 or pure Ag are not suitable as the solder (silver solder) being used as welding and use.
Solder 20 as shown in Figure 3, containing comprise solder 20 surperficial 20a and from the surperficial 20a of solder 20 to the near-surface region 21 of the close near zone both sides of depth direction, and the interior zone 22 beyond near-surface region 21.In addition, the surperficial 20a of solder 20 is arranged in the bottom (part of Z2 side) at solder 20 place of lower surface (face of the Z2 side) 1b of sealing ring 1 and the side 1c of sealing ring 1, is formed with near-surface region 21 throughout the whole face of this surperficial 20a.
Here, in present embodiment, by preferentially removing the Cu of near-surface region 21, in near-surface region 21, be formed as Ag relative to Ag and Cu of solder 20 total containing quality ratio be more than 0.95.That is, the Ag's of the solder 20 in the near-surface region 21 of solder 20 contains quality ratio (Cu by the Ag of the solder before preferentially removing containing quality ratio) containing the quality ratio Ag be greater than in interior zone 22.In addition, near-surface region 21 is formed to the degree of depth L of more than 1.3 μm from the surperficial 20a of solder 20 to depth direction.Namely, near-surface region 21 is formed to the degree of depth L of more than 1.3 μm in lower surface (face of the Z2 side) 1b of sealing ring 1 at Z1 direction (depth direction), simultaneously, be formed to the degree of depth L of more than 1.3 μm in the X-direction vertical with Z-direction or Y-direction (depth direction, with reference to Fig. 1) in the side 1c of sealing ring 1.
In addition, the degree of depth of the degree of depth L1 of near-surface region 21 is larger, suppresses the effect of corrosion higher, therefore, is preferably the degree of depth of more than about 1.5 μm from the surperficial 20a of solder 20 to depth direction, is more preferably the degree of depth of more than about 2.0 μm.In addition, if make near-surface region 21 expand at depth direction, then have Ag from the surperficial 20a stripping of solder 20 thus the possibility of solder 20 thinning, if the degree of depth L1 of the near-surface region 21 that dystectic Ag enriches is large to the necessary degree of depth, then there is solder 20 be difficult to melting thus when soldered joint, bad possibility occur, therefore, the degree of depth L1 of near-surface region 21 is preferably the degree of depth of less than about 4.0 μm from the surperficial 20a of solder 20 to depth direction.
In addition, sealing ring 1 as shown in Figure 2, is bonded with each other from upper surface 1a to lower surface 1b in the state of thickness direction (Z-direction) successively lamination with solder 20 to form the Ni layer 11 of base material 10, intermediate layer 12 and Cu layer 13.That is, sealing ring 1 is made up of the clad material of 4 layers.Its result, each layer of formation sealing ring 1 is mutual to be engaged strongly, all can inhibition layer peel off each other in any one interface of 4 layers, and, can suppress to invade in interfacial corrosion factor.
In addition, as shown in Figure 4, sealing ring 1 is configured to for electronic unit storage encapsulation 100.Specifically, electronic unit storage encapsulation 100 possesses the sealing ring 1 in present embodiment, the base 101 engaged with sealing ring 1 in the below (Z2 side) of sealing ring 1 and (Z1 side) engages with sealing ring 1 above sealing ring 1 cover 102.Like this, to be engaged and sealing ring 1 engages with cover 102 by sealing ring 1 with base 101, the incorporating section 101a that the electronic unit 103 of quartz resonator etc. is installed via projection 104 is formed as airtight conditions.
Base 101 is formed by the pottery of aluminium oxide etc., and is formed as the box like not having lid.In addition, the base 101 of box like has the incorporating section 101a of the central portion being formed at base 101 and is formed at upper surface, the solder side 101b of the frame-shaped of quadrangle that engages with sealing ring 1 of frame-shaped wall portion of base 101.In addition, sealing ring 1 and the solder side 101b of the frame-shaped of base 101 utilize the solder 20 of the melting of sealing ring 1 to engage.Here, in order to improve the adaptation between the solder side 101b of base 101 and solder 20, the metal layer that W layer, Ni layer and Au layer obtain with this order lamination can be set at the solder side 101b of base 101.
Cover 102 comprises the flat parts formed by Fe-Ni-Co alloy.In addition, the upper surface 1a of cover 102 and the base material 10 of sealing ring 1 engages by stitching the method such as to weld.Here, in order to improve the adaptation of the upper surface 1a of cover 102 and base material 10, Ni layer and Au layer can be set in the region at least engaged with the upper surface 1a of base material 10 of cover 102 with the coating of this order lamination.
Next, with reference to Fig. 2, Fig. 3, Fig. 5 and Fig. 6, the manufacturing process of the sealing ring 1 of an embodiment of the invention is described.
First, prepare mainly to comprise the Ni plate of Ni, the intermediate plate be made up of Fe-Ni-Co alloy, the Cu plate (not shown) mainly comprising Cu and the main solder (silver solder) 120 containing Ag and Cu.In addition, the solder 120 of (before preferential removal Cu), does not form near-surface region 21 at this moment, and overall as solder 120, Ag's is roughly certain containing quality ratio.In addition, in solder 120 Ag relative to Ag and Cu total containing quality ratio (i.e. Ag/ (Ag+Cu)) be greater than Cu relative to Ag and Cu total contain quality ratio (i.e. Cu/ (Ag+Cu)).
Then, by Ni plate, intermediate plate, Cu plate and solder 120 with thickness direction with this order lamination state engage.Thus, form Ni layer 11, intermediate layer 12, Cu layer 13 and solder 120 and engage the clad material (with reference to Fig. 5) obtained.In addition, the thickness of the base material 10 of this clad material and the thickness of solder 120 are formed as the thickness t1 (more than about 100 μm, less than about 130 μm than the base material 10 in the sealing ring 1 of finished goods respectively, with reference to Fig. 2) and thickness t2 (more than about 5 μm, less than about 30 μm, reference Fig. 2) the slightly large component removed by aftermentioned cylinder grinding and wet etching of solder 20.
Then, use not shown stamping machine by the frame-shaped (ring-type) of clad material stamping-out (punch press process) quadrangularly.Now, by clad material from solder 120 side (Z2 side) through-thickness (Z-direction) stamping-out.Thus, as shown in Figure 5, the sealing ring 201a that stamping-out is annular is formed.In addition, at sealing ring 201a, the microspike 1d given prominence to as acute angle-shaped is formed when stamping-out.In addition, Fig. 5 and Fig. 6 only represents the section expanding the part representing sealing ring.
After this, in order to remove the microspike 1d being formed at sealing ring 201a, cylinder grinding is carried out.Specifically, multiple sealing ring 201a, the medium (grinding-material) be made up of pottery etc., the mixture be made up of chemical powder etc. and water etc. are dropped into cylinder (not shown).Then, cylinder is rotated the stipulated time with fixing speed.Thus, by making medium and microspike 1d collide, as shown in Figure 6, the sealing ring 201b eliminating microspike 1d is formed.Now, four dihedrals of sealing ring 201b become R planar.On the other hand, because the hardness of the silver solder forming the solder 120 of sealing ring 201b is little, the foreign matter 2 be made up of the residue etc. of medium adheres in the mode of the exposing surface 120a imbedding solder 120.In addition, the grinding of this cylinder was carried out before wet etching process described later.In addition, cylinder grinding is an example of " using the grinding that grinding-material carries out " in the present invention.
Here, in the manufacture method of present embodiment, wet etching (pickling) is carried out to sealing ring 201b.Specifically, the etching solution of more than multiple sealing ring 201b and about 10 DEG C, less than about 30 DEG C is dropped in not shown cylinder.
The etching solution used in this wet etching comprises oxidant containing hydrogen peroxide, in the stoste be mixed to get with regulation ratio with water or add water and stoste is diluted in the dilution of regulation ratio the solution adding the strong acid containing dilute sulfuric acid and obtain.Above-mentioned oxidant has makes Ag and Cu contained in solder 120 be oxidized and form the function of silver oxide and cupric oxide respectively.In addition, above-mentioned etching solution is made for and easily removes solder 120 and not easily remove base material 10.
In addition, the above-mentioned strong acid containing dilute sulfuric acid is the aqueous sulfuric acid that the concentration of sulfuric acid is less than 90 quality %.Here, in etching solution, preferably add sulfuric acid makes the concentration of sulfuric acid be more than the about 0.5 quality % of etching solution entirety, the concentration of below about 1.0 quality %.In etching solution, preferably add sulfuric acid makes the concentration of sulfuric acid be more than the about 0.7 quality % of etching solution entirety, the concentration of below about 1.0 quality %.Here, the above-mentioned strong acid containing dilute sulfuric acid has the function that the cupric oxide among by the oxide (silver oxide and cupric oxide) of the solder 120 generated by hydrogen peroxide contained in above-mentioned oxidant is preferentially removed.Thus, in the surperficial 120a of solder 120, compared with silver oxide, preferentially cupric oxide can be removed.Its result, from the surface of solder 120 and the near-surface region 21 (with reference to Fig. 3) of near surface, Cu is preferentially removed.In addition, dilute sulfuric acid is an example of " the preferential remover of Cu " of the present invention.In addition, for above-mentioned etching solution, also acetic acid or the oxide remover containing ammonia can be mixed further, such oxide remover has and dissolves and remove the silver oxide of solder, the function of cupric oxide, the silver oxide generated by above-mentioned oxidant can be removed, and the function removing cupric oxide can be improved.
Then, cylinder is made to rotate the stipulated time with the speed of regulation.By this wet etching, solder 120 is uniformly removed, and base material 10 is not removed substantially on the other hand.Its result, as shown in Figure 2, the foreign matter 2 (with reference to Fig. 6) be made up of the residue etc. of medium imbedding the surperficial 20a exposed of solder 20 is removed.And, as shown in Figure 3, Ag relative to Ag and Cu total be that the near-surface region 21 of more than 0.95 is at the surperficial 20a of solder 20 be formed to the degree of depth L of more than 1.3 μm from surperficial 20a to depth direction containing quality ratio.In addition, the Ag of the entirety of solder 20 contains quality ratio and reaches more than 0.64.Afterwards, by washing etc., removing the residue remaining in the surperficial 20a of solder 20, manufacturing sealing ring 1 as depicted in figs. 1 and 2 thus.
Then, with reference to Fig. 3, Fig. 7 and Fig. 8, the structure of the lid component 3 of the use solder 20 of an embodiment of the invention is described.In addition, lid component 3 is examples of " base material with solder " in the present invention.
The lid component 3 of an embodiment of the invention as shown in Figure 7, is formed as the tabular of quadrangle when overlooking.In addition, lid component 3 as shown in Figure 8, same with above-mentioned sealing ring 1, comprise the base material 10 being configured at upside (Z1 side) and the solder 20 being configured at downside (Z2 side), further, the Ni layer 11 of base material 10, intermediate layer 12, Cu layer 13 and solder 20 is formed to be bonded with each other with the state of this order lamination from upper surface 3a to lower surface 3b through-thickness (Z-direction).That is, the above-mentioned sealing ring 1 of lid component 3 is same, is made up of the clad material of 4 layers.
In addition, the solder 20 of lid component 3 is same with the solder 20 of sealing ring 1, and as shown in Figure 3, by preferentially removing the Cu of near-surface region 21, in near-surface region 21, it is more than 0.95 that the Ag being formed as solder 20 contains quality ratio.In addition, by preferentially removing the Cu of near-surface region 21, be configured to the Ag of the solder 20 of near-surface region 21 containing quality ratio higher than interior zone 22 Ag containing quality ratio.In addition, near-surface region 21 is formed to the degree of depth L of more than 1.3 μm from the surperficial 20a of solder 20 to depth direction.In addition, in Fig. 8, the near-surface region 21 and interior zone 22 that are formed at lid component 3 is eliminated.In addition, the base material 10 of lid component 3 and other formation of solder 20 same with sealing ring 1, omit the description.
In addition, as shown in Figure 8, lid component 3 is configured to for electronic unit storage encapsulation 200.Specifically, the encapsulation 200 of the housing electronic parts base 101 that possesses the lid component 3 in present embodiment and engage with lid component 3 in the below (Z2 side) of lid component 3.Further, by making lid component 3 engage with base 101, the incorporating section 101a being provided with electronic unit 103 is formed as airtight conditions.In addition, the solder side 101b of the frame-shaped of lid component 3 and base 101 is engaged (welding) by the solder 20 of the melting of lid component 3.In addition, the structure of base 101 is identical with using the electronic unit storage encapsulation 100 of sealing ring 1, therefore omits the description.
In addition, in the manufacture craft of the lid component 3 of present embodiment, except when punch press process by except the tabular of clad material stamping-out quadrangularly, identical with the manufacturing process of above-mentioned sealing ring 1, therefore omit the description.
In present embodiment, following effect can be obtained.
In present embodiment, as mentioned above, by make in near-surface region 21 Ag of solder 20 relative to the total of Ag and Cu containing quality ratio be more than 0.95, comprise easily and solder 20 that external corrosion factor is reacted surperficial 20a near-surface region 21 in, ionization tendency lower than Cu and the high Ag of corrosion resistance become large containing quality ratio, therefore, on the contrary, ionization tendency higher than Ag and the low Cu of corrosion resistance become enough little containing quality ratio, its result, fully can suppress external corrosion factor (oxygen in air and the anion of moisture or chloride ion etc.) and the reaction of near-surface region 21 of surperficial 20a of solder 20 comprising Cu.And, by near-surface region 21 to be formed to the degree of depth L of more than 1.3 μm from the surperficial 20a of solder 20 to depth direction, the state of the impact not being vulnerable to external corrosion factor from the surperficial 20a of solder 20 to sufficient degree of depth L can be formed as, therefore, it is possible to suppress external corrosion factor and the reaction of near-surface region 21 of surperficial 20a of solder 20 comprising Cu.Thereby, it is possible to suppress to generate corrosion product in the near-surface region 21 of solder 20.Its result, the deteriorated appearance of the sealing ring 1 (lid component 3) that the variable color caused due to corrosion product can be suppressed to cause, and, situation about existing in the mixing of junction surface corrosion product can be suppressed, therefore, can not only suppress because engaging the bad increase of sewing fraction defective caused, can also suppress produce because of corrosion product cause concavo-convex, therefore, it is possible to suppress the sealing of sealing ring 1 (lid component 3) to reduce.
In addition, in present embodiment, in interior zone 22 beyond the near-surface region 21 of solder 20, there is no need to make Ag's to be more than 0.95 containing quality ratio, therefore, it is possible to suppress the Ag of solder 20 self containing quality ratio, its result, the fusing point of solder 20 can be suppressed to rise, and the use amount as precious metals ag can be reduced.
In addition, in present embodiment, in the entirety (regions of near-surface region 21 and interior zone 22 both sides) of solder 20, by make Ag containing quality ratio be greater than Cu containing quality ratio, Cu in preferential near-surface region 21 of removing solder 20, when to make the Ag of near-surface region 21 contain quality ratio be more than 0.95, by the Ag of the solder 120 before making preferentially to remove Cu containing quality ratio be greater than Cu containing quality ratio, it is more than 0.95 that the Ag that easily can be formed as the near-surface region 21 of solder 20 contains quality ratio.
In addition, in present embodiment, by making the Ag's of solder 20 entirety to be more than 0.64 containing quality ratio, Cu in preferential near-surface region 21 of removing solder 20, when to make the Ag of near-surface region 21 contain quality ratio be more than 0.95, containing quality ratio by the Ag of the near-surface region 21 making solder 20 is more than 0.95, can easily be formed.
In addition, in present embodiment, by making Ag's in solder 20 entirety to be less than 0.85 containing quality ratio, can suppress that Ag's in solder 20 entirety is too high containing quality ratio, therefore, it is possible to suppress the fusing point of the entirety of solder 20 too high.Thereby, it is possible to suppress brazing temperature to uprise.
In addition, in present embodiment, formed sealing ring 1 (lid component 3) by engaging with the state of this order lamination the 4 layers of clad material obtained from upper surface 1a (3a) to lower surface 1b (3b) through-thickness (Z-direction) with the Ni layer 11 forming base material 10, intermediate layer 12, Cu layer 13 and solder 20.Thereby, it is possible to suppress to invade in the interfacial corrosion factor of base material 10 and solder 20, therefore, can not only suppress to generate corrosion product at the surperficial 20a of solder 20, the Interface debond corrosion product at base material 10 and solder 20 can also be suppressed.Its result, can suppress being separated of base material 10 and solder 20.Its result, can improve the reliability of the base material (sealing ring 1 and lid component 3) with solder further.
In addition, in present embodiment, as electronic unit storage with the lid component 3 of the sealing ring 1 of encapsulation 100 or housing electronic parts encapsulation 200 use with in the base material of solder, by Ag is contained quality ratio be more than 0.95 near-surface region 21 to be formed to the degree of depth of more than 1.3 μm from the surperficial 20a through-thickness of solder 20, the near-surface region 21 of the solder 20 at sealing ring 1 or lid component 3 can be suppressed to generate corrosion product.
In addition, in present embodiment, when solder 20 is containing Ag, Cu and Sn, the containing ratio of the Sn in solder 20 is made to be below 6 quality %.Thus, utilize the Sn contained by solder 20, can easily suppress brazing temperature to uprise.In addition, by making the containing ratio of the Sn in solder 20 be below 6 quality %, processing characteristics when making sealing ring 1 or lid component 3 can be suppressed to reduce.Particularly when base material 10 and solder 20 being engaged making clad material, calendering can be suppressed to become difficulty.
In addition, in present embodiment, by the formation near-surface region, whole region 21 of the surperficial 20a throughout solder 20, the generation of corrosion product can be suppressed throughout the whole region of the surperficial 20a of solder 20.
In addition, in present embodiment, near-surface region 21 is formed to the degree of depth L of more than 1.5 μm from the surperficial 20a of solder 20 to depth direction.In addition, preferably near-surface region 21 is formed to the degree of depth L more than more than 2.0 μm from the surperficial 20a of solder 20 to depth direction.Thereby, it is possible to be formed as the state of the impact not being vulnerable to external corrosion factor from the surperficial 20a of solder 20 to sufficient degree of depth L, therefore, it is possible to effectively suppress external corrosion factor and Cu to react in the near-surface region 21 of solder 20.Thereby, it is possible to effectively suppress to generate corrosion product in the near-surface region 21 of solder 20.
In addition, in present embodiment, near-surface region 21 is formed to the degree of depth L of less than 4.0 μm from the surperficial 20a of solder 20 to depth direction.Thereby, it is possible to suppress Ag to contain quality ratio, to increase the degree of depth L of the near-surface region 21 causing fusing point high excessive, therefore, it is possible to the fusing point of solder 20 entirety excessively uprises.Thereby, it is possible to suppress brazing temperature to uprise.
In addition, in present embodiment, the Cu layer 13 mainly comprising Cu is formed by solder 20 side at base material 10, utilize the Cu layer 13 mainly comprising Cu with flexibility, thermal stress or deformation that solder 20 and base material 10 cause because of thermal expansion difference can be absorbed, therefore, it is possible to suppress to peel off near welding position (brazed portions).In addition, by Cu layer 13 containing Cu, the heat conductivity of Cu layer 13 can be improved, therefore, it is possible to touch the heat that back welding connects near sites efficiently.Thereby, it is possible to the thermal stress near suppression welding position becomes large.
In addition, in the manufacture method of present embodiment, in wet etching, utilize the hydrogen peroxide of etching solution and sulfuric acid preferentially to remove Cu in the near-surface region 21 of solder 20, thus, Cu is removed, and easily can make the component improving removed Cu containing quality ratio of the Ag in the near-surface region 21 of solder 20.
In addition, in the manufacture method of present embodiment, as the preferential remover of Cu, add as the dilute sulfuric acid of strong acid, thereby, it is possible in strong acid easily dissolved ions be inclined to the oxide of high Cu, on the other hand, the oxide of the Ag that ionization tendency is low is not easily dissolved in strong acid, therefore, it is possible to reliably preferentially remove Cu.In addition, generate the sulfate anion as the anion of sulfuric acid and the cationic compound of Cu (copper sulphate), and the compound generated is water miscible, namely, dissolve in etching solution, therefore, utilize the sulfuric acid as strong acid, the oxide of the Cu in the 120a on the surface of strong acid dissolution solder 120, near-surface region 21 can be utilized, and the oxide of Cu in etching solution can be suppressed to separate out and be attached to sealing ring 1 (lid component 3).Thus, there is no need to arrange from sealing ring 1 (lid component 3) remove attachment the operation of precipitate, therefore, it is possible to simplify the manufacturing process of sealing ring 1 (lid component 3).
In addition, in the manufacture method of present embodiment, preferably before the operation of carrying out wet etching, such as, the grinding-material of cylinder grinding etc. is utilized to grind.Thus, such as, when the base material with solder by utilizing the machinings such as compacting stamping-out shaping, the burr or the foreign matter that are difficult to removal by wet etching can be removed in advance, therefore, as long as be adjusted to the treatment conditions that the near-surface region 21 at solder 20 can be formed as the state of the regulation that can obtain effect of the present invention in wet etching, its result, the manufacturing process of sealing ring 1 (lid component 3) can be simplified.
[embodiment]
Then, with reference to Fig. 3, Fig. 9 ~ Figure 12, the validation test (degree of depth of surface composition analysis, near-surface region measures and corrosion resistance measurement) in order to confirm the sealing ring that effect of the present invention is carried out and lid component is described.
First, the test material of validation test is made.Specifically, prepared same with above-mentioned embodiment, by Ni layer 11, intermediate layer 12, Cu layer 13 and solder 120, (Cu, by the solder before preferentially removing, engages the clad material obtained as shown in Figure 5).Now, as Cu by the solder before preferentially removing, employ containing Ag85 quality % and the 85Ag-Cu solder (silver solder) containing Cu and trace element.Then, use not shown stamping machine by clad material stamping-out circlewise, thus form sealing ring 201a (as shown in Figure 5).After this, same with above-mentioned embodiment, cylinder grinding has been carried out to sealing ring 201a.
Here, as embodiment 1, wet etching (pickling) has been carried out to sealing ring 201b (with reference to Fig. 6).Now, as etching solution, prepare the acetic acid aqueous solution containing acetic acid 25 quality %, aqueous hydrogen peroxide solution containing hydrogen peroxide 35 quality % and water to mix with the volume ratio of 1 ︰ 5 ︰ 4 stoste obtained.After this, be that the solution that the dilute sulfuric acid that with the addition of strong acid in 1 ︰ 1 dilution of 1 ︰ 1 obtains uses as etching solution using the volume ratio in stoste and water.Now, the concentration of sulfuric acid is adjusted to 0.7 quality % of etching solution entirety.Then, under the condition of 25 DEG C, multiple sealing ring and etching solution are dropped into cylinder, after making cylinder rotate 20 minutes with fixing speed, washes etc.That is, in embodiment 1,20 minutes wet etchings have been carried out.Thus, the sealing ring of embodiment 1 is obtained.
On the other hand, as comparative example 1, the sealing ring not carrying out wet etching is directly used.In addition, as comparative example 2,3 and 4, use and carry out operating and obtained sealing ring except 1 minute, 5 minutes and 10 minutes, similarly to Example 1 except respectively wet etching being changed to.
In addition, outside sealing ring, used stamping machine stamping-out to become tabular as Cu by the clad material that the solder before preferentially removing uses the solder (silver solder) of 85Ag-Cu alloy to obtain, thus form lid component.After this, cylinder grinding has been carried out to lid component.Then, as embodiment 2, under condition similarly to Example 1, wet etching (pickling) has been carried out.That is, in example 2,20 minutes wet etchings have been carried out.Thus, the lid component of embodiment 2 is obtained.
On the other hand, as comparative example 5, the lid component not carrying out wet etching is directly used.In addition, as comparative example 6,7 and 8, use and carry out operating and obtained lid component except 1 minute, 5 minutes and 10 minutes, similarly to Example 2 except respectively wet etching being changed to.
In addition, clad material except being used containing Ag 72 quality % and the 72Ag-Cu alloy containing Cu and trace element solder (silver solder) as Cu by the solder before preferentially removing, has similarly to Example 2 been prepared.Then, use not shown stamping machine that clad material stamping-out is become tabular, define lid component.After this, cylinder grinding has been carried out to lid component.
Then, as embodiment 3, employ and carried out wet etching except 10 minutes, with the condition same with the wet etching of embodiment 2 and obtained lid component except being carried out by wet etching (pickling).In addition, as embodiment 4, use and carried out wet etching and obtained lid component with condition similarly to Example 2.That is, in example 4,20 minutes wet etchings have been carried out.
On the other hand, as comparative example 9, the lid component not carrying out wet etching is directly used.In addition, as comparative example 10 and 11, use to carry out except 1 minute and 5 minutes except respectively wet etching being changed to, with same operation of embodiment 3 and 4 and obtained lid component.
In addition, clad material except being used containing Ag 67 quality % and the 67Ag-Cu-Sn alloy containing Cu, some Sn and trace element solder (silver solder) as Cu by the solder before preferentially removing, has similarly to Example 2 been prepared.Then, use not shown stamping machine that clad material stamping-out is become tabular, define lid component.After this, cylinder grinding has been carried out to lid component.
Then, as embodiment 5, use and carried out wet etching except 5 minutes, with the condition same with the wet etching of embodiment 2 and obtained lid component except being carried out by wet etching (pickling).
On the other hand, as comparative example 12, the lid component not carrying out wet etching is directly used.In addition, as comparative example 13, use and operate obtained lid component except being carried out by wet etching except 1 minute, similarly to Example 5.
After this, probe-microanalyser (Electron Probe MicroAnalyser:EPMA) is used to observe the surface composition of the solder of obtained sealing ring and lid component.In addition, after sealing ring and lid component being cut off with the section of regulation, scanning electron microscope-energy dispersion type x-ray analysis equipment (SEM-EDX) is used to observe the amount of Ag and Cu of depth direction.Then, what measure Ag from the surface of wlding at depth direction is the degree of depth of the near-surface region of more than 0.95 containing quality ratio.
Then, corrosion resistance test has been carried out.In this corrosion resistance test, above-described embodiment 1 and the sealing ring of comparative example 1 ~ 4 and the lid component of embodiment 2 ~ 5 and comparative example 5 ~ 13 are placed 470 hours under the constant temperature and humidity condition of 85 DEG C and 85%Rh (relative humidity), has carried out constant temperature and moisture test.Then, probe-microanalyser is used to observe the surface composition of the solder of the sealing ring after constant temperature and moisture test and lid component.In addition, by the extent of corrosion of the embodiment 1 after visualization corrosion resistance test and the sealing ring of comparative example 1 ~ 4 and the lid component of embodiment 2 ~ 5 and comparative example 5 ~ 13, the corrosion resistance of sealing ring and lid component is judged.In addition, in Fig. 9 ~ Figure 12, in order to making clear in figure, for Ag relative to Ag and Cu total containing quality ratio to be the result of more than 0.95 and the degree of depth of near-surface region the be result of more than 1.3 μm, use the thick circle of solid line to rise, and the thick circle of the quality % dotted line of the O (oxygen) of result good for corrosion resistance is risen.
As experimental result as shown in figs. 9 to 12, the result before corrosion resistance test, confirms by carrying out wet etching (pickling), and on the surface of solder, Ag improves relative to the quality ratio that contains of the total of Ag and Cu.In addition, by at least carrying out the wet etching (embodiment 1 ~ 5 of 1 minute, comparative example 2 ~ 4,6 ~ 8,10,11 and 13), in the surface of solder, Ag's rises to more than 0.9 containing quality ratio, and carry out the wet etching (embodiment 1 ~ 5 of 5 minutes, comparative example 3,4,7,8 and 11), in the surface of solder, Ag's rises to more than 0.95 containing quality ratio.It can thus be appreciated that by carrying out the wet etching of more than 5 minutes, what at least can make the Ag of solder surface is more than 0.95 containing quality ratio, can form near-surface region of the present invention.
In addition, even if the Ag in solder entirety contains the solder (72Ag-Cu alloy and 67Ag-Cu-Sn alloy) of the solder that quality ratio is formed lower than 85Ag-Cu alloy, also same with 85Ag-Cu alloy, by carrying out the wet etching (embodiment 3 ~ 5 and comparative example 11) of more than 5 minutes, the Ag of solder surface contains quality ratio and reaches more than 0.95.Can distinguish thus: though when the Ag of solder entirety contain quality ratio low, by carrying out wet etching, the Ag on the surface of solder fully can be increased to more than 0.95 containing quality ratio.In addition, can think, though the Ag in solder entirety contain quality ratio lower than 0.67, by suitably carrying out wet etching, the Ag on the surface of solder can be contained quality ratio and being fully increased to more than 0.95.Here, be increased to more than 0.95 to easily the Ag on the surface of solder be contained quality ratio, in order to reduce the removal amount of Cu, at Cu by the solder composition before preferentially removing, preferred Ag containing quality ratio be greater than Cu containing quality ratio.In addition, can think, by making the Ag's in the entirety of solder to be more than 0.64 containing quality ratio, also easily the Ag of solder surface can be contained quality ratio and being increased to more than 0.95.
In addition, according to the result of corrosion resistance test, the near-surface region of solder is made to be formed to the situation (embodiment 1 ~ 5) of the degree of depth being greater than 1.5 μm by carrying out wet etching (pickling), as compared to the situation (comparative example 1,5,9 and 12) of not carrying out wet etching (pickling), the oxygen content in the surface of the solder after corrosion resistance test becomes 70% (=5.5 (embodiment 2)/7.9 (comparative example 5) × 100%) below.That is, the oxygen content (quality %) that fully can be reduced the surface of solder by wet etching (pickling) is confirmed.In addition, in corrosion-resistant evaluation, roughly can not see the corrosion (formation of corrosion product) on the surface having solder, confirm corrosion resistance good.
On the other hand, the near-surface region of solder is made to be formed to the situation (comparative example 2 ~ 4,6 ~ 8,10,11 and 13) of the degree of depth of less than 1.2 μm by carrying out wet etching, as compared to the situation (comparative example 1,5,9 and 12) of not carrying out wet etching, the oxygen content on the surface of the solder after corrosion resistance test becomes more than 81% (=7.2 (comparative example 3)/8.8 (comparative example 1) × 100%).That is, confirm fully to reduce the oxygen content on the surface of solder according to the processing time of wet etching (pickling).In addition, in corrosion resistance is evaluated, except the situation (comparative example 11) that the near-surface region of solder is formed to the degree of depth of 1.2 μm (comparative example 2 ~ 4,6 ~ 8,10 and 13), confirm corrosion (having the formation of corrosion product) on the surface of solder, confirm corrosion resistance not good.This can think that, because in comparative example 2 ~ 4,6 ~ 8,10 and 13, wet etching (pickling) is insufficient, the near-surface region of solder is not formed into enough degree of depth and causes.
In addition, when the near-surface region of solder is formed to the degree of depth of 1.2 μm (comparative example 11), although the extent of corrosion on the surface of the solder after corrosion resistance test is little, but formed, with the situation (comparative example 9) of not carrying out wet etching, there is same oxygen content (3.7wt%), can think that corrosion resistance is insufficient.
According to these results, by the degree of depth being formed to 1.3 μm that are greater than 1.2 μm containing the quality ratio near-surface region that is more than 0.95 from the surface of solder to depth direction by Ag, the corrosion (formation of corrosion product) on the surface of solder can be suppressed, corrosion resistance can be made good.In addition, distinguished: by Ag is contained quality ratio be more than 0.95 near-surface region of the present invention to be formed to the degree of depth of more than 1.5 μm from solder surface to depth direction, reliably can suppress the corrosion (formation of corrosion product) on the surface of solder, corrosion resistance can be made good.
In addition, as the quality % (78.7,79.0,67.4 and 60.9) of the Ag do not carried out in the comparative example 1,5,9 and 12 of wet etching (pickling) respectively lower than the reason of the quality % (85,85,72 and 67) of the Ag in used solder, can think that the thermal conductance owing to producing when (during joint) when clad material is formed or cylinder grinding etc. causes easily diffusion in Ag-Cu (-Sn) alloy, Cu is diffused into face side, on the contrary, the quality % of Ag diminishes.
In addition, embodiment of disclosure and embodiment are all interpreted as example in all, and do not constitute any limitation.Scope of the present invention is not limited by the explanation of the above-described embodiment and examples, but is represented by the scope of claim, and comprises and have equal meaning and changes all in scope with the scope of claim.
Such as, in the above-described embodiment, exemplified with the example carrying out wet etching after cylinder grinding, but the present invention is not limited.In the present invention, also cylinder grinding can not be carried out.Thus, do not need the abradant equipment of cylinder, and can production process be simplified.In addition, as the grinding using grinding-material, the Ginding process beyond cylinder grinding also can be used.
In addition, in the above-described embodiment, base material 10 is exemplified with by Ni layer 11, intermediate layer 12 and Cu layer 13 3 layers of example formed, but the present invention is not limited.In the present invention, base material also can be made up of 1 layer (homogenous material), also can be made up of multiple layers of more than 2 layers or 4 layers.In addition, base material is not limited to metal, such as, also can be made up of pottery or heat stable resin etc.
In addition, in the above-described embodiment, the example that the clad material be bonded with each other by base material 10 and solder 20 exemplified with sealing ring 1 (lid component 3) is formed, but the present invention is not limited.In the present invention, base material can not be engaged as clad material with solder.Such as, solder can be coated on a surface of base material.
In addition, in the above-described embodiment, as the example of the base material with solder of the present invention, exemplified with the sealing ring 1 used respectively in electronic unit storage encapsulation 100 and 200 and lid component 3, but the present invention is not limited.The present invention, also can electronic unit storage encapsulation beyond purposes in use with the base material of solder in apply structure of the present invention.Such as, what also can use in a heat exchanger applies structure of the present invention with in the base material of solder.
In addition, in the above-described embodiment, as Cu by the solder before preferentially removing, exemplified with the example of the silver solder of 85Ag-Cu alloy, 72Ag-Cu alloy and 67Ag-Cu-Sn alloy, but the present invention is not limited.In the present invention, also can use other solder formed.
In addition, in the above-described embodiment, as the preferential remover of Cu, exemplified with containing the example of strong acid comprising dilute sulfuric acid, but the present invention is not limited.In the present invention, such as, also can using strong acid different from dilute sulfuric acid for hydrochloric acid etc. as the preferential remover of Cu.In addition, as long as preferentially Cu can be removed, also can containing the solution (such as alkaline solution) beyond strong acid as the preferential remover of Cu.
Claims (20)
1., with a base material for solder, it is characterized in that:
Possess the solder being formed at described base material, at least containing Ag and Cu,
In described solder, Ag is relative to the degree of depth being formed to more than 1.3 μm containing the quality ratio near-surface region that is more than 0.95 from the surface of described solder to depth direction of the total of Ag and Cu.
2., as claimed in claim 1 with the base material of solder, it is characterized in that:
In described solder, Ag relative to Ag and Cu total containing quality ratio be greater than Cu relative to Ag and Cu total containing quality ratio.
3., as claimed in claim 1 with the base material of solder, it is characterized in that:
Ag's in the entirety of described solder is more than 0.64 containing quality ratio.
4., as claimed in claim 1 with the base material of solder, it is characterized in that:
Ag's in the entirety of described solder is less than 0.85 containing quality ratio.
5., as claimed in claim 1 with the base material of solder, it is characterized in that:
Be made up of the clad material being bonded with each other by described base material and described solder and being formed.
6., as claimed in claim 1 with the base material of solder, it is characterized in that:
Its sealing ring as electronic unit storage encapsulation uses.
7., as claimed in claim 1 with the base material of solder, it is characterized in that:
It is as the lid component of electronic unit storage encapsulation.
8., as claimed in claim 1 with the base material of solder, it is characterized in that:
Described solder contains Ag, Cu and Sn,
In described solder, the content of Sn is below 6 quality %.
9., as claimed in claim 1 with the base material of solder, it is characterized in that:
Described near-surface region is formed throughout the whole region of described solder surface.
10., as claimed in claim 1 with the base material of solder, it is characterized in that:
Described near-surface region is formed to the degree of depth of more than 1.5 μm from the surface of described solder to depth direction.
11., as claimed in claim 10 with the base material of solder, is characterized in that:
Described near-surface region is formed to the degree of depth of more than 2.0 μm from the surface of described solder to depth direction.
12., as claimed in claim 1 with the base material of solder, is characterized in that:
Described near-surface region is formed to the degree of depth of less than 4.0 μm from the surface of described solder to depth direction.
13., as claimed in claim 1 with the base material of solder, is characterized in that:
In the described solder side of described base material, be formed with the stress-buffer layer containing Cu.
14. 1 kinds, with the manufacture method of the base material of solder, is characterized in that:
Possessing the solder at least containing Ag and Cu to being formed on base material, using the etching solution containing the preferential remover of Cu for preferentially removing Cu to carry out the operation of wet etching,
In described wet etching, the preferential remover of described Cu in described etching solution is utilized preferentially to remove Cu in the near-surface region of described solder, thus, the degree of depth more than from solder surface to depth direction to 1.3 μm formed Ag relative to Ag and Cu total containing quality ratio be more than 0.95 described near-surface region.
15., as claimed in claim 14 with the manufacture method of the base material of solder, is characterized in that: the preferential remover of described Cu contains strong acid.
16., as claimed in claim 15 with the manufacture method of the base material of solder, is characterized in that: the preferential remover of described Cu contains the sulfuric acid as described strong acid.
17., as claimed in claim 14 with the manufacture method of the base material of solder, is characterized in that: before the operation of carrying out described wet etching, also possess and use grinding-material to carry out the operation of grinding.
18., as claimed in claim 14 with the manufacture methods of the base material of solder, is characterized in that: in described solder, the total of relative Ag and Cu of Ag containing quality ratio be greater than Cu relative to Ag and Cu total containing quality ratio.
19., as claimed in claim 14 with the manufacture method of the base material of solder, is characterized in that: the Ag's in the entirety of described solder is more than 0.64 containing quality ratio.
20., as claimed in claim 14 with the manufacture method of the base material of solder, is characterized in that: before the operation of carrying out described wet etching also possessing by described base material and described solder being bonded with each other and forming the operation of clad material.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013247723A JP6221690B2 (en) | 2013-11-29 | 2013-11-29 | Base material with brazing material and method for producing base material with brazing material |
| JP2013-247723 | 2013-11-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104668811A true CN104668811A (en) | 2015-06-03 |
| CN104668811B CN104668811B (en) | 2016-11-09 |
Family
ID=53304675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410578350.6A Active CN104668811B (en) | 2013-11-29 | 2014-10-24 | Base material with solder and the manufacture method of the base material with solder |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6221690B2 (en) |
| KR (1) | KR101623643B1 (en) |
| CN (1) | CN104668811B (en) |
| TW (1) | TWI606882B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312661A (en) * | 2020-03-31 | 2020-06-19 | 中国电子科技集团公司第四十三研究所 | Use stress-reducing sandwich structure that ceramic substrate is last to enclose frame |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6849556B2 (en) * | 2017-08-22 | 2021-03-24 | 京セラ株式会社 | Electronic device packages and electronic devices |
| JP7127673B2 (en) * | 2019-10-23 | 2022-08-30 | 日立金属株式会社 | Method for producing base material with brazing material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1167742A (en) * | 1995-05-17 | 1997-12-17 | 东芝株式会社 | Ceramic-metal binding material, ceramic-metal bound article making method and vacuum seal container |
| JP2003133449A (en) * | 2001-10-25 | 2003-05-09 | Kyocera Corp | Seal ring with brazing material and method of manufacturing electronic component storage package using the same |
| JP2003309206A (en) * | 2002-04-16 | 2003-10-31 | Kyocera Corp | Electronic component storage container |
| CN1509499A (en) * | 2001-06-14 | 2004-06-30 | 株式会社德山 | Substrate for component soldering and manufacturing method thereof |
| CN1792537A (en) * | 2004-12-24 | 2006-06-28 | 日立电线株式会社 | Brazing clad material, and brazing method and brazing product using the same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3232051B2 (en) * | 1998-09-28 | 2001-11-26 | 京セラ株式会社 | Electronic device manufacturing method |
| JP3757881B2 (en) * | 2002-03-08 | 2006-03-22 | 株式会社日立製作所 | Solder |
| JP3714557B2 (en) | 2003-04-21 | 2005-11-09 | 日立金属株式会社 | Brazing material for ceramic substrate, ceramic circuit board using the same, and power semiconductor module |
| JP2005296960A (en) | 2004-04-06 | 2005-10-27 | Seiko Epson Corp | Metal surface treatment agent, metal surface treatment method, solder bonding agent, solder paste, and semiconductor electronic component mounting method |
| JP2006049595A (en) * | 2004-08-05 | 2006-02-16 | Tanaka Kikinzoku Kogyo Kk | Silver solder cladding material, and lid and ring for package sealing |
| JP3887645B2 (en) | 2005-07-19 | 2007-02-28 | 株式会社東芝 | Manufacturing method of ceramic circuit board |
| JP2007042719A (en) * | 2005-08-01 | 2007-02-15 | Nec Electronics Corp | Semiconductor device |
| JP4828980B2 (en) * | 2006-03-27 | 2011-11-30 | 京セラ株式会社 | Joining member, method for manufacturing the same, joining structure, and method for connecting base |
| WO2008041350A1 (en) * | 2006-09-29 | 2008-04-10 | Kabushiki Kaisha Toshiba | Joint with first and second members with a joining layer located therebetween containing sn metal and another metallic material; methods for forming the same joint |
| JP2010104999A (en) * | 2008-10-28 | 2010-05-13 | Hitachi Cable Ltd | Composite material for brazing and brazed product |
-
2013
- 2013-11-29 JP JP2013247723A patent/JP6221690B2/en active Active
-
2014
- 2014-08-08 KR KR1020140102194A patent/KR101623643B1/en active Active
- 2014-08-22 TW TW103128949A patent/TWI606882B/en active
- 2014-10-24 CN CN201410578350.6A patent/CN104668811B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1167742A (en) * | 1995-05-17 | 1997-12-17 | 东芝株式会社 | Ceramic-metal binding material, ceramic-metal bound article making method and vacuum seal container |
| CN1509499A (en) * | 2001-06-14 | 2004-06-30 | 株式会社德山 | Substrate for component soldering and manufacturing method thereof |
| JP2003133449A (en) * | 2001-10-25 | 2003-05-09 | Kyocera Corp | Seal ring with brazing material and method of manufacturing electronic component storage package using the same |
| JP2003309206A (en) * | 2002-04-16 | 2003-10-31 | Kyocera Corp | Electronic component storage container |
| CN1792537A (en) * | 2004-12-24 | 2006-06-28 | 日立电线株式会社 | Brazing clad material, and brazing method and brazing product using the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312661A (en) * | 2020-03-31 | 2020-06-19 | 中国电子科技集团公司第四十三研究所 | Use stress-reducing sandwich structure that ceramic substrate is last to enclose frame |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6221690B2 (en) | 2017-11-01 |
| KR101623643B1 (en) | 2016-05-23 |
| TWI606882B (en) | 2017-12-01 |
| CN104668811B (en) | 2016-11-09 |
| TW201524660A (en) | 2015-07-01 |
| JP2015106630A (en) | 2015-06-08 |
| KR20150062922A (en) | 2015-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104364895B (en) | The manufacture method of sealing ring and sealing ring | |
| PH12016501076B1 (en) | Bonding wire for semiconductor device | |
| CN106794557B (en) | Solder alloy | |
| KR102497489B1 (en) | Bonding wire for semiconductor devices | |
| PH12016502022B1 (en) | Bonding wire for semiconductor device | |
| CN104668811A (en) | Substrate with a brazing material and method for producing substrate with a brazing material | |
| WO2016135993A1 (en) | Bonding wire for semiconductor devices | |
| KR102497492B1 (en) | Bonding wire for semiconductor devices | |
| JP5552934B2 (en) | Covering body and electronic component | |
| US20080138528A1 (en) | Method for Depositing Palladium Layers and Palladium Bath Therefor | |
| CN105074051A (en) | Electroless plating method and ceramic substrate | |
| TW201800607A (en) | Lead-frame structure, lead-frame, surface mount electronic device and methods of producing same | |
| JP2018040030A (en) | Surface treatment method of copper component and production method of semiconductor packaging substrate | |
| TW201309843A (en) | Thin nickel-palladium-gold coating, package structure formed using the coating wire containing wire and method of producing the same | |
| US20060255437A1 (en) | Lead-free semiconductor device | |
| US20130292168A1 (en) | Starting material for a sintered bond and process for producing the sintered bond | |
| EP4184562A1 (en) | Insulation substrate and method for manufacturing same | |
| Yoo et al. | Effects of Pd alloying and coating on the galvanic corrosion between Cu wire and bond pads for a semiconductor packaging | |
| JP6025259B2 (en) | Plating | |
| CN117377217B (en) | Design and test method for influence of galvanic effect of PCB | |
| US20230065609A1 (en) | Plating stack | |
| JP2014129612A (en) | Coated body and electronic part | |
| JP6162986B2 (en) | Metal-ceramic circuit board manufacturing method | |
| Lai et al. | High performance cyanide-free immersion gold | |
| JPH05283579A (en) | Semiconductor device and manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |