CN1380691A - Substrate bonding for ball grid array chip packaging structure - Google Patents
Substrate bonding for ball grid array chip packaging structure Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 177
- 238000004806 packaging method and process Methods 0.000 title claims description 14
- 239000003292 glue Substances 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims 3
- 238000000034 method Methods 0.000 abstract description 12
- 230000008646 thermal stress Effects 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000465 moulding Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000012536 packaging technology Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
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Abstract
Description
本发明是关于一种半导体封装技术,特别是有关于一种适用于球栅数组式(Ball Grid Array,BGA)芯片封装结构的基板连片(substratestrip),其上包括多个以框架相连的基板(substrate),其特点在于具有一特殊的基板连结架构,可防止其上的各个基板于高温制造过程中产生热变形,藉此而使得后续植置于基板背面上的焊球(solder balls)具有高平整度(coplanarity)。The present invention relates to a semiconductor packaging technology, in particular to a substrate strip (substratestrip) suitable for a Ball Grid Array (BGA) chip packaging structure, which includes a plurality of substrates connected by frames (substrate), which is characterized by a special substrate connection structure, which can prevent the thermal deformation of each substrate on it during the high-temperature manufacturing process, so that the solder balls (solder balls) that are subsequently implanted on the back of the substrate have High coplanarity.
球栅数组(Ball Grid Array,BGA)为一种先进的半导体芯片封装技术,其特点在于采用一基板(substrate)来安置半导体芯片,并于该基板背面植置上多个成栅状数组排列的焊球(solder balls),以通过这些焊球将整个的封装单元焊结及电性连接至外部的印刷电路板。Ball Grid Array (BGA) is an advanced semiconductor chip packaging technology, which is characterized in that a substrate is used to place semiconductor chips, and a plurality of arrays arranged in a grid array are placed on the back of the substrate. Solder balls are used to solder and electrically connect the entire package unit to an external printed circuit board through these solder balls.
于工厂制造过程中,BGA封装单元一般是以成批方式建构于一基板连片(substrate strip)上;该基板连片包含多个以框架相连的基板,其中每一个基板即用以制作一个BGA封装单元。然而,已有的基板连片的一项缺点在于其受到高温处理时,例如为黏晶后的固化过程(die-bond cure)、焊线制造过程(wire bonding)、封装胶体的模铸过程(molding)、和模铸后的固化过程(molding cure),由于这些制造过程步骤中的温度至少为200?C以上,因此会使得基板易于产生热变形现象,致使后续植置于其上的球栅数组具有不佳的平整度,而影响到封装单元与外部印刷电路板之间的焊结效果。以下即配合所附图式的第1A至1D图,以图解方式简述此热变形问题。In the factory manufacturing process, BGA packaging units are generally constructed in batches on a substrate strip; the substrate strip includes multiple substrates connected by frames, each of which is used to make a BGA packaging unit. However, one disadvantage of the existing substrate bonding is that it is subjected to high temperature treatment, such as the curing process (die-bond cure), wire bonding process (wire bonding), molding process of encapsulant ( molding), and the curing process after molding (molding cure), because the temperature in these manufacturing process steps is at least 200? If the temperature is higher than C, thermal deformation of the substrate will easily occur, resulting in poor flatness of the ball grid array subsequently implanted thereon, thereby affecting the soldering effect between the packaging unit and the external printed circuit board. The following is a brief description of the thermal deformation problem in a diagrammatic manner in conjunction with Figures 1A to 1D of the accompanying drawings.
第1A图即显示一典型的BGA封装结构。如图所示,此BGA封装结构包含:(a)一基板11,其具有一正面11a和一背面11b;(b)一半导体芯片20,其安置于基板11的正面11a上;以及(c)一球栅数组30,其植置于基板11的背面11b上。半导体芯片20可采用已有的焊线技术(wirebonding)或覆晶技术(flip chip)而电性藕接至基板10;而整体的封装单元则采用表面藕接技术(Surface Mount Technology,SMT)通过球栅数组30而焊结及电性藕接至一外部的印刷电路板40。Figure 1A shows a typical BGA package structure. As shown in the figure, this BGA package structure includes: (a) a
请接着参阅第1B图,于工厂制造过程中,BGA封装单元一般是以成批方式建构于一基板连片10上;该基板连片10包含:(a)多个四方形的基板11,其中每一个基板11即用以制作一个BGA封装单元;以及(b)一框架12,其具有一对平行延伸的支撑杆12a、12b,用以连结及支撑该些基板11。Please refer to FIG. 1B. In the factory manufacturing process, BGA packaging units are generally constructed in batches on a
已有技术是将各个基板11通过四个连结片13a、13b、13c、13d所构成的四点连结架构而连结至支撑杆12a、12b,且此四个连结片13a、13b、13c、13d一般设置于基板11的四个角落上。此外,位于左上角的连结片13a一般设计成具有较大的宽度,以于其上另外设置一注胶通路(未显示),用以注入封装胶体制造过程中所需的胶质封装材料。In the prior art, each
接着如第1C图所示,上述的基板连片10的一项缺点在于其受到高温处理时,例如为黏晶后的固化过程、焊线制造过程、封装胶体的模铸过程、和模铸后的固化过程,其中的基板11会易于产生变形现象。这是由于基板11于受热时,其体积会向各个方向膨胀。然而,如第1C图所示,由于基板11的四个角落均已分别设置了连结片13a、13b、13c、13d,因此朝向这些方向的膨胀将受到阻碍,使得热应力将被迫转而朝向基板11的中央方向推挤(热应力的方向如第1C图中的箭头所示),致使基板11的中央部分向上隆起而产生不必要的变形现象。Next, as shown in FIG. 1C, a shortcoming of the above-mentioned
接着如第1D图所示,变形的基板11将使得后续植置于其背面11b上的球栅数组30具有不佳的平整度;因此于整体的封装单元于藕接至外部的印刷电路板40时,将致使其中一些焊球具有不佳的焊结效果。Then, as shown in FIG. 1D, the
目前所采用的大尺寸基板,包括35’35、37.5’37.5、40’40、及42.5’42.5(单位为mm)的基板,特别易于产生上述的热变形现象。The large-size substrates currently used, including substrates of 35'35, 37.5'37.5, 40'40, and 42.5'42.5 (unit: mm), are particularly prone to the above-mentioned thermal deformation phenomenon.
相关的专利技术例如包括有美国专利第5,652,185号″MAXIMIZEDSUBSTRATE DESIGN FOR GRID ARRAY BASED ASSEMBLIES″;美国专利第5,635,671号″MOLD RUNNER REMOVAL FROM A SUBSTRATE-BASED PACKAGEDELECTRONIC DEVICE″;美国专利第5,691,242号″METHOD FOR MAKING ANELECTRONIC COMPONENT HAVING AN ORGANIC SUBSTRATE″;等等。Related patented technologies include, for example, U.S. Patent No. 5,652,185 "MAXIMIZED SUBSTRATE DESIGN FOR GRID ARRAY BASED ASSEMBLIES"; U.S. Patent No. 5,635,671 "MOLD RUNNER REMOVAL FROM A SUBSTRATE-BASED PACKAGE DELECTRONIC DEVICE"; COMPONENT HAVING AN ORGANIC SUBSTRATE"; etc.
美国专利第5,652,185号揭露了一种基板架构,其可减小基板的面积,因此可减少基板的耗用。美国专利第5,635,671号所揭露的基板架构可易于除去溢出的胶质封装材料。美国专利第5,691,242号则揭露了一种芯片封装方法,其中采用一特殊的基板来安置芯片。US Patent No. 5,652,185 discloses a substrate structure that can reduce the area of the substrate, thereby reducing the consumption of the substrate. The substrate structure disclosed in US Pat. No. 5,635,671 can easily remove the spilled gel packaging material. US Patent No. 5,691,242 discloses a chip packaging method in which a special substrate is used to mount the chip.
然而,由于上述的三个美国专利所采用的基板仍是利用四点连结架构来连结至框架的支撑杆,因此其应用上仍然存在有上述的热变形现象,使得后续植置上的球栅数组具有不佳的平整度。However, since the substrates used in the above three U.S. patents are still connected to the support rods of the frame using a four-point connection structure, the above-mentioned thermal deformation phenomenon still exists in its application, which makes the ball grid array on the subsequent implantation Has poor flatness.
鉴于以上所述已有技术的缺点,本发明的主要目的便是在于提供一种改进型的基板连片,其可防止其上的各个基板于高温制造过程中产生热变形现象,藉此而使得后续植置于基板背面的球栅数组具有高平整度。In view of the above-mentioned shortcomings of the prior art, the main purpose of the present invention is to provide an improved substrate connection, which can prevent the thermal deformation of each substrate on it during the high-temperature manufacturing process, thereby enabling The ball grid array subsequently implanted on the back of the substrate has high flatness.
根据以上所述的目的,本发明即提供了一种改进型的基板连片。According to the above-mentioned purpose, the present invention provides an improved substrate connection.
一种基板连片,其包含:A substrate connection, comprising:
a)一框架,其具有一对平行延伸的支撑杆,包括一第一支撑杆和一a) a frame having a pair of parallel extending struts comprising a first strut and a
第二支撑杆;以及a second support rod; and
b)至少一基板,其安置于该框架上,并通过至多二个连结片而连结b) at least one base plate, which is placed on the frame and connected by at most two connecting pieces
至该框架的支撑杆。to the support rods of the frame.
一种基板连片,其包含:A substrate connection, comprising:
a)一框架,其具有一对平行延伸的支撑杆,包括一第一支撑杆和一a) a frame having a pair of parallel extending struts comprising a first strut and a
第二支撑杆;以及a second support rod; and
b)至少一基板,其安置于该框架上,并通过二个连结片所构成的二b) At least one base plate, which is placed on the frame, and passes through two connecting pieces formed by two
点连结架构而连结至该框架上。Click Link Frame to link to that frame.
一种基板连片,其包含:A substrate connection, comprising:
a)一框架,其具有一对平行延伸的支撑杆,包括一第一支撑杆和一a) a frame having a pair of parallel extending struts comprising a first strut and a
第二支撑杆;以及a second support rod; and
b)至少一基板,其安置于该对支撑杆上,并通过一个连结片所构成b) at least one base plate, which is placed on the pair of support rods and constituted by a connecting piece
的一点连结架构而连结至该框架上。Linked to the frame by a point link frame.
本发明的基板连片的特点在于采用二点连结架构或一点连结架构,而非已有技术所采用的四点连结架构,来将各个基板连结至框架的支撑杆;亦即为仅通过至多二个连结片来将各个基板连结至框架的支撑杆。于高温处理过程中,受热的基板便可朝向未配置连结片的角落膨胀,亦即可将热应力朝这些方向舒解掉,使得基板不会产生热变形现象。由于基板不会产生热变形现象,因此后续植置于基板背面上的球栅数组便可具有高平整度。The substrate connection of the present invention is characterized in that it adopts a two-point connection structure or a one-point connection structure instead of the four-point connection structure used in the prior art to connect each substrate to the support rod of the frame; that is, only through at most two A connecting piece is used to connect each substrate to the support rods of the frame. During the high-temperature treatment process, the heated substrate can expand toward the corners where the connecting pieces are not arranged, that is, the thermal stress can be relieved in these directions, so that the substrate will not be thermally deformed. Since the substrate does not generate thermal deformation, the ball grid array subsequently implanted on the back of the substrate can have high flatness.
本发明半导体封装技术,适用于球栅数组式(Ball Grid Array,BGA)芯片封装结构的基板连片(substrate strip),其上包括多个以框架相连的基板(substrate),其特点在于具有一特殊的基板连结架构,可防止其上的各个基板于高温制造过程中产生热变形,藉此而使得后续植置于基板背面上的焊球(solder balls)具有高平整度(coplanarity)。The semiconductor packaging technology of the present invention is suitable for substrate strips of Ball Grid Array (BGA) chip packaging structure, which includes a plurality of substrates connected by frames, and is characterized in that it has a The special substrate connection structure can prevent thermal deformation of each substrate on it during the high-temperature manufacturing process, so that the solder balls (solder balls) that are subsequently implanted on the back of the substrate have high coplanarity.
本发明的实质技术内容及其实施例已用图解方式详细揭露绘制于本说明书所附的图式的中。这些图式的内容简述如下:The essential technical content of the present invention and its embodiments have been disclosed in detail in the drawings attached to this specification by means of diagrams. The contents of these diagrams are briefly described as follows:
第1A图(已有技术)为一剖面结构示意图,其中显示一典型的BGA封装结构;Fig. 1A (prior art) is a schematic cross-sectional structure, which shows a typical BGA packaging structure;
第1B图(已有技术)为一俯视结构示意图,其中显示一已有的基板连片;Fig. 1B (the prior art) is a top view structural schematic diagram, which shows an existing substrate connection;
第1C图(已有技术)显示第1B图所示的基板连片中的各个基板于受热时的膨胀状态;FIG. 1C (prior art) shows the expansion state of each substrate in the substrate wafer shown in FIG. 1B when heated;
第1D图(已有技术)显示一构建于变形的基板上的BGA封装结构;FIG. 1D (prior art) shows a BGA package structure built on a deformed substrate;
第2A图为一俯视结构示意图,其中显示本发明的基板连片的第一Fig. 2A is a schematic plan view of the structure, which shows the first substrate connection of the present invention.
实施例;Example;
第2B图显示第2A图所示的基板连片中的各个基板于受热时的膨胀状态;Figure 2B shows the expansion state of each substrate in the substrate bond shown in Figure 2A when heated;
第3A图为一俯视结构示意图,其中显示本发明的基板连片的第二Fig. 3A is a top view structural schematic diagram, which shows the second substrate connection of the present invention.
实施例;Example;
第3B图显示第3A图所示的基板连片中的各个基板于受热时的膨胀状态;FIG. 3B shows the expansion state of each substrate in the substrate bond shown in FIG. 3A when heated;
第4A图为一俯视结构示意图,其中显示本发明的基板连片的第三Fig. 4A is a top view structural schematic diagram, which shows the third substrate connection of the present invention
实施例;Example;
第4B图显示第4A图所示的基板连片中的各个基板于受热时的膨胀状态;Figure 4B shows the expansion state of each substrate in the substrate bond shown in Figure 4A when heated;
第5A图为一俯视结构示意图,其中显示本发明的基板连片的第四Fig. 5A is a schematic top view of the structure, which shows the fourth substrate connection of the present invention.
实施例;Example;
第5B图显示第5A图所示的基板连片中的各个基板于受热时的膨胀状态;FIG. 5B shows the expansion state of each substrate in the substrate bond shown in FIG. 5A when heated;
第6A图(已有技术)为三维特性图,其中显示已有技术所提供的基板上所植置的球栅数组的平整度;Figure 6A (the prior art) is a three-dimensional characteristic diagram, which shows the flatness of the ball grid array implanted on the substrate provided by the prior art;
第6B图为三维特性图,其中显示本发明所提供的基板上所植置的球栅数组的平整度。FIG. 6B is a three-dimensional characteristic diagram, which shows the flatness of the ball grid array implanted on the substrate provided by the present invention.
图式标号说明Explanation of schematic symbols
10 已有的基板连片 11 基板10 Existing
12 框架 12a 第一支撑杆12
12b 第二支撑杆 13a 第一连结片12b The
13b 第二连结片 13c 第三连结片13b The second connecting
13d 第四连结片 20 半导体芯片13d Fourth link piece 20 Semiconductor chip
30 球栅数组 40 印刷电路板30 Ball Grid Array 40 Printed Circuit Board
100 第一实施例的基板连片100 The substrate connection of the first embodiment
110 基板 120 框架110 Substrate 120 Frame
121 第一支撑杆 122 第二支撑杆121 The first support rod 122 The second support rod
131 第一连结片 132 第二连结片131 The first connecting
200 第二实施例的基板连片200 Substrate bonding in the second embodiment
210 基板 220 框架210 Substrate 220 Frame
221 第一支撑杆 222 第二支撑杆221 The first support rod 222 The second support rod
231 第一连结片 232 第二连结片231 The first connecting piece 232 The second connecting piece
300 第三实施例的基板连片300 Substrate bonding in the third embodiment
310 基板 320 框架310
321 第一支撑杆 322 第二支撑杆321
331 第一连结片 332 第二连结片331 The first connecting
400 第四实施例的基板连片400 Substrate bonding in the fourth embodiment
410 基板 420 框架410
421 第一支撑杆 422 第二支撑杆421 The
431 连结片431 connecting piece
以下即配合所附图式中的第2A至2B图、第3A至3B图、第4A至4B图、及第5A至5B图,分别详细揭露说明本发明的基板连片的四个不同的实施例。The following is to cooperate with Figures 2A to 2B, Figures 3A to 3B, Figures 4A to 4B, and Figures 5A to 5B in the accompanying drawings to disclose in detail four different implementations of the substrate connection of the present invention. example.
第一实施例(第2A至2B图)First Embodiment (Figures 2A to 2B)
以下即配合所附图式的第2A至2B图,详细揭露说明本发明的基板连片的第一实施例。The first embodiment of the substrate connection of the present invention is disclosed in detail below in conjunction with FIGS. 2A to 2B of the accompanying drawings.
请参阅第2A图,本发明第一实施例的基板连片100包含:(a)多个四方形的基板110;以及(b)一框架120,其具有一对平行延伸的支撑杆121、122,用以连结及支撑该些基板110。于此实施例中,基板连片100上的各个基板110仅通过二个连结片131、132所构成的二点连结架构而连结至框架120的支撑杆121、122上;其中第一连结片131是用以将各个基板110的左上方角落连结至第一支撑杆121,而第二连结片132则是用以将各个基板110的左下方角落连结至第二支撑杆122。Please refer to FIG. 2A, the substrate connection 100 of the first embodiment of the present invention includes: (a) a plurality of
第2B图即显示第2A图所示的基板连片100中的各个基板110于受热时的膨胀状态。基本上,当基板110受到高温处理时,其体积会向各个方向膨胀。然而,如第2B图所示,由于基板110的左上方角落和左下方角落已分别连结了连结片131、132,因此朝向左上方和左下方的膨胀将受到阻碍。但由于基板110的右上方角落和右下方角落并未配置连结片,因此受热的基板110可自由地朝这些方向膨胀(其热应力方向如第2B图中的箭头所示),亦即可将热应力朝这些方向舒解掉,使得基板110不会产生热变形现象。FIG. 2B shows the expansion state of each
由于基板110不会产生热变形现象,因此后续于其背面上所植置的球栅数组(未显示)即可具有高平整度。Since the
第二实施例(第3A至3B图)Second Embodiment (Figures 3A to 3B)
以下即配合所附图式的第3A至3B图,详细揭露说明本发明的基板连片的第二实施例。The second embodiment of the substrate bonding of the present invention is disclosed in detail below in conjunction with FIGS. 3A to 3B of the accompanying drawings.
请参阅第3A图,本发明第二实施例的基板连片200包含:(a)多个四方形的基板210;以及(b)一框架220,其具有一对平行延伸的支撑杆221、222,用以连结及支撑该些基板210。于此实施例中,基板连片200上的各个基板210亦仅通过二个连结片231、232所构成的二点连结架构而连结至框架220的支撑杆221、222上;其与前一实施例不同的处仅在于其中的第一连结片231设置于基板210的左上方角落,而第二连结片232则设置于对角的右下方角落。Please refer to FIG. 3A, the substrate connecting piece 200 of the second embodiment of the present invention includes: (a) a plurality of square substrates 210; , for connecting and supporting the substrates 210 . In this embodiment, each substrate 210 on the substrate connecting piece 200 is also connected to the support rods 221, 222 of the frame 220 only through the two-point connection structure formed by the two connecting pieces 231, 232; The only difference is that the first connecting piece 231 is disposed at the upper left corner of the substrate 210 , and the second connecting piece 232 is disposed at the lower right corner of the diagonal.
第3B图即显示第3A图所示的基板连片200中的各个基板210于受热时的膨胀状态。如图所示,由于基板210的左上方角落和右下方角落已分别连结了连结片231、232,因此朝向左上方和右下方的膨胀将受到阻碍。但由于基板210的右上方角落和左下方角落并未配置连结片,因此受热的基板210可朝这些方向膨胀(其热应力方向如第3B图中的箭头所示),亦即可将热应力朝这些方向舒解掉,使得基板210不会产生热变形现象。FIG. 3B shows the expansion state of each substrate 210 in the substrate connecting piece 200 shown in FIG. 3A when heated. As shown in the figure, since the upper left corner and the lower right corner of the base plate 210 are connected with the connecting pieces 231 and 232 respectively, the expansion toward the upper left and lower right will be hindered. However, since the upper right corner and the lower left corner of the substrate 210 are not provided with connecting pieces, the heated substrate 210 can expand in these directions (the direction of thermal stress is shown by the arrow in Figure 3B), that is, the thermal stress can be reduced. It is relaxed toward these directions, so that the substrate 210 will not be thermally deformed.
第三实施例(第4A至4B图)Third Embodiment (Figures 4A to 4B)
以下即配合所附图式的第4A至4B图,详细揭露说明本发明的基板连片的第三实施例。The third embodiment of the substrate connection of the present invention is disclosed in detail below in conjunction with FIGS. 4A to 4B of the accompanying drawings.
请参阅第4A图,本发明第三实施例的基板连片300包含:(a)多个四方形的基板310;以及(b)一框架320,其具有一对平行延伸的支撑杆321、322,用以连结及支撑该些基板310。于此实施例中,基板连片300上的各个基板310亦仅通过二个连结片331、332所构成的二点连结架构而连结至框架320的支撑杆321、322上;其与前二个实施例不同的处仅在于其中的第一连结片331设置于基板310的左上方角落,而第二连结片332则设置于基板310的底边。Please refer to FIG. 4A, the
第4B图即显示第4A图所示的基板连片300中的各个基板310于受热时的膨胀状态。如图所示,由于基板310的左上方角落和底边已分别连结了连结片331、332,因此朝向左上方和底边的膨胀将受到阻碍。但由于基板310的右上方角落、右下方角落、和左下方角落并未配置连结片,因此受热的基板310可朝这些方向膨胀(其热应力方向如第4B图中的箭头所示),亦即可将热应力朝这些方向舒解掉,使得基板310不会产生热变形现象。FIG. 4B shows the expansion state of each
第四实施例(第5A至5B图)Fourth Embodiment (FIGS. 5A to 5B)
以下即配合所附图式的第5A至5B图,详细揭露说明本发明的基板连片的第四实施例。The fourth embodiment of the substrate connection of the present invention is disclosed in detail below in conjunction with FIGS. 5A to 5B of the accompanying drawings.
请参阅第5A图,本发明第四实施例的基板连片400亦包含:(a)多个四方形的基板410;以及(b)一框架420,其具有一对平行延伸的支撑杆421、422,用以连结及支撑该些基板410。Please refer to FIG. 5A, the
此第四实施例与前述的三个实施例不同的处在于基板连片400上的各个基板410亦仅通过一个连结片431所构成的一点连结架构而连结至框架420上,且此连结片431即设置于基板410左上方的注胶角落。由于基板410的注胶信道(未显示)需要较大的宽度,因此连结片431的宽度须设计成大于注胶信道的宽度;而此大宽度的连结片431即可单独地对基板410提供足够的支撑力。This fourth embodiment differs from the previous three embodiments in that each
第5B图即显示第5A图所示的基板连片400中的基板410于受热时的膨胀状态。如图所示,由于基板410的左上方角落已连结了连结片431,因此朝向左上方的膨胀将受到阻碍。但由于基板410的右上方角落、右下方角落、和左下方角落并未配置连结片,因此受热的基板410可朝这些方向膨胀(其热应力方向如第5B图中的箭头所示),亦即可将热应力朝这些方向舒解掉,使得基板410不会产生热变形现象。FIG. 5B shows the expanded state of the
实际测试结果(第6A至6B图)Actual test results (Figures 6A to 6B)
实际测试结果显示本发明可大为减小基板在受到高温处理后所产生的变形程度,使得后续于基板背面上所植置的球栅数组具有高平整度。下表即显示其中的实际测试数据的一例(表中的数值代表焊球与基准面的距离)。比较此表中的数据即可得知,采用本发明所得到的球栅数组的平整度优于已有技术。
此外,第6A图的特性图即显示已有技术所提供的基板上所植置的球栅数组的平整度;而第6B图则显示本发明所提供的基板上所植置的球栅数组的平整度。比较第6B图与第6A图即可得知,采用本发明所得到的球栅数组平整度优于已有技术。本发明因此较已有技术具有更佳的进步性。In addition, the characteristic diagram in Fig. 6A shows the flatness of the ball grid array placed on the substrate provided by the prior art; and Fig. 6B shows the flatness of the ball grid array placed on the substrate provided by the present invention. flatness. Comparing Fig. 6B with Fig. 6A, it can be seen that the flatness of the ball grid array obtained by adopting the present invention is better than that of the prior art. The present invention is thus more progressive than the prior art.
以上所述仅为本发明的较佳实施例而已,并非用以限定本发明的实质技术内容的范围。本发明的实质技术内容是广义地定义于权利要求中。任何他人所完成的技术实体或方法,若是与所述的权利要求所定义者为完全相同、或是为一种等效的变更,均将被视为涵盖于此权利要求之中。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the scope of the substantive technical content of the present invention. The essential technical content of the present invention is broadly defined in the claims. Any technical entity or method accomplished by others, if it is exactly the same as that defined in the claims, or if it is an equivalent change, will be deemed to be covered by the claims.
Claims (16)
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