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CN1326141C - 具有永磁层结构的磁头 - Google Patents

具有永磁层结构的磁头 Download PDF

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CN1326141C
CN1326141C CNB028011279A CN02801127A CN1326141C CN 1326141 C CN1326141 C CN 1326141C CN B028011279 A CNB028011279 A CN B028011279A CN 02801127 A CN02801127 A CN 02801127A CN 1326141 C CN1326141 C CN 1326141C
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magnetic head
layer structure
coil
head
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CN1461476A (zh
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H·W·范科斯特伦
P·W·M·布洛姆
J·J·L·霍里克西
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Koninklijke Philips NV
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Abstract

为了进行高分辨率和低误码率的MAMMOS读出，提出了一种磁头，该磁头包括扁平的磁线圈(1)，后者具有由导电层绕组(5a，5b)构成的线圈层结构(3a，3b)，该磁头还包括永磁层结构(7)，此永磁层结构与线圈层结构平行延伸并具有平面内磁轴(m)。

Description

具有永磁层结构的磁头
技术领域
本发明涉及一种磁头，它具有大体上是扁平的磁线圈，此线圈具有由电导绕组构成的至少一层线圈结构。该磁头特别应用于磁光装置中。
背景技术
这种磁头的一种实施例在WO-A98/48418中已有说明。从该PCT文件中了解到的磁头包括具有两个平行线圈部分的扁平磁线圈，每个线圈部分包含用薄膜技术形成的多个绕组。磁线圈在磁轭中延伸，该磁轭与线圈一起确定了光束的中心通路。这种已知的磁头用于磁-光(MO)系统中，在具有记录层的磁光(MO)介质中存储数据，在记录或读出数据时磁头位于距MO介质的主要表面不远处。这种磁光系统，除了包括所述磁头外，还包括激光源和光学元件，例如聚焦透镜，以使激光束通过中心通道到达记录层。在数据存储时，激光束可用来使选中处大约加热到记录层的居里温度，减少MO介质的记录层的矫顽磁性。同时，磁线圈被激活，产生横过记录层的随时间而变化的磁场，以便确定磁畴模式。读出存储的信息时，用激光扫描MO介质，就是利用众所周知的磁光Kerr效应。
在磁光存储信息时，存储数据位的最小宽度取决于衍射极限，即所用聚焦透镜的数值孔径(NA)以及激光源发射的激光束的波长。
减少所述宽度通常是基于较短波长的激光和较高NA的光学聚焦系统。在磁光记录时，利用激光脉冲磁场调制(LP-MFM)可将最小位长减小到光学衍射极限以下。在这种过程中，位长取决于激光的脉冲速率以及交变的磁场。要读出以这种方法记录的小标记，要利用磁超分辨率(MSR)技术，包括磁畴扩展方法，象基于具有静磁耦合层的介质的MAMMOS。磁畴扩展方法的优点在于可以以类似于大小可与衍射限制点相比拟的标记的信噪比检测长度小于衍射极限的标记。
磁放大磁光(MO)系统，称为MAMMOS，在IEEE Journal of SelectedTopics in Quantum Electronics，Vol.4，No.5，September/October1998，pages 815-820中有说明。
MAMMOS的概念是在读出时利用磁畴扩展来实现信号增强。方法是利用具有相互静磁耦合的存储层和读出层的存储介质。读出时激光束加热读出位置处的介质。当存储层中的一个标记，即磁化方向与读出层的初始磁化方向相反的一个位，处于称为复制窗口的区域内，而此处的温度很高足以使磁化反向时，磁畴在读出层成核。施加外磁场使该磁畴扩展，磁场被反向，以便在检测到磁畴后破坏该磁畴。
从WO-A98/48418中了解到的磁头中所用的线圈在与MAMMOS结合使用时，其读出分辨率有限。
发明内容
本发明的目的就是提供利用基于静磁耦合层的磁畴扩展技术来提高读出分辨率的一种磁头。
此目的用本发明的磁头即可达到，该磁头包括至少大体上扁平的磁线圈，此线圈具有包括电导绕组的至少一层线圈结构，所述磁头还包括大体上与线圈层结构平行延伸的且具有平面内磁轴的永磁层结构。由于采用的措施，本发明的磁头在使用时可提供由线圈层结构产生的在使用时随时间变化的垂直磁场和永磁层结构产生的静态平面内偏置磁场。永磁层的适用材料有，例如，CoPt或FePt合金；Co/Pt或Co/Pd多层；Nd2Fe14B或Co5Sm稀土过渡金属化合物。
MAMMO介质的读出层中小反向区域的成核在读出过程的初始阶段主要发生在杂散场最强且杂散场的方向偏离垂直方向的区域内，因为这种平面内杂散场分量可对读出层的垂直磁化施加一扭距，从而引发成核。因此。在用已知装置读出时，成核不是在标记中心的附近开始，而是在标记/非标记以及非标记/标记过渡区的附近开始。这就导致了检测区域的加宽，因而在高分辨率的读出时导致错误的复制磁畴。
利用本发明的磁头，可以产生外部磁场，它具有磁道方向的磁场分量并有足够的强度以抑制错误复制磁畴的不利效应。上述磁场分量增加标记/非标记过渡区的成核并减少非标记/标记过渡区的成核，或与之相反，这根据平面内磁场分量的方向而定。读出时将所得的倾斜磁场与复制窗口的运动相结合就降低了小标记和非标记的误码率。本发明的结构还有一个效果就是平面内磁场分量可增强初始的磁畴扩展速度，这对高数据速率是有利的。除了上述效果外，本发明的磁头还有一个优点，即不需要电流来产生平面内偏置磁场，这样就将热损耗保持在有限范围内。
在LP-MFM记录以及MAMMOS读出等过程中为了获得高的数据速率，磁线圈应该很小且靠近介质。本发明的措施特别有利之处在于其所谓的第一表面或覆盖层事件记录配置，其中线圈和光学聚焦系统都在磁光介质的同一侧，且激光点通过线圈聚焦。就这点而言，本发明的磁头的实施例具有以下特点：磁线圈具有中心区，导电绕组在中心区四周延伸，而永磁层结构包括两个扁平的永久磁铁，它们位于磁线圈中心区的相对两侧。磁铁具有相同的磁化方向，以便在磁线圈的中心区产生所需的平面内磁场。该实施例提供了在使用时获得线圈中心区的较大部分上的倾斜磁场而此中心区并不被覆盖的可能性。中心区可以是透明的内部区域或内部孔径。如果是衬底入射记录，此时磁光介质在线圈和光学聚集系统之间延伸且激光束不通过线圈，则以下实施例就较为有利，即磁线圈具有中心区，导电绕组围绕该中心区延伸，永磁层结构包括位于中心区的永久磁铁。
本发明的磁头的一个实施例能在介质中产生非常强的平面内磁场，其特点在于永磁层结构位于线圈层结构的一侧，这一侧朝向与存储介质主表面相对的磁头面。所述磁头面可以由至少部分地与线圈层结构平行延伸的磁头面组成或包括至少部分地与线圈层结构平行延伸的磁头面。此实施例在使用时靠近永磁层结构的边沿处产生的磁场会增加，但这种偶发的效应几乎不会影响读出过程，因为介质的相关区域并未被加热。
另一实施例不会有上述的偶发效应，其特点在于永磁层结构位于线圈层结构远离磁头面的一侧。在这种配置中磁线圈在永磁层结构和磁头面之间延伸，虽然平面内磁场可能有点弱，但也可作为优选配置。
另一实施例的特点是永磁层结构和线圈层结构处于同一平面，线圈层结构在永磁层结构的一对永久磁铁之间延伸。如果要求所需的平面内磁场分量跨过距线圈层结构较远处的较大面积，这种同平面结构的实施例就特别有利。
根据磁线圈中心区的大小，和/或使用时线圈与介质的距离，大体上与线圈层结构平行延伸的一种软磁层结构在增强存储介质中由线圈产生的磁场方面可能较为有利。基于这个原因，这里提供了一个配备有这种软磁层结构的本发明的实施例。在这样的实施例中，线圈层结构可在永磁层结构和软磁层结构之间延伸，或者软磁层结构位于线圈层结构与磁头面相对的一侧，这一侧远离磁头面。软磁层结构改进了导电绕组的效率。而且，特别是如果永磁层结构和线圈层结构处于同一平面，永久磁铁的效率可以因软磁层结构而得到改进。如果记录的配置结构是磁线圈位于介质的一侧且激光束通过存储介质的衬底聚焦到一点时，软磁层结构可以是一种连续的软磁薄膜。否则，软磁层结构可以做成有间断的软磁薄膜。适用于软磁层结构的软磁材料有，例如，NiFe或CoZrNb或FeTaN合金。
作为永磁层结构的固态金属永磁薄膜会导致杂散(涡流)电流的产生，当线圈工作在高频时会引发此现象。本发明的一种磁头实施例可将涡流的产生减到最小，其特点是其永磁层结构是一种至少有一层非导电中间层的层叠结构。磁性材料可以是例如CoPt合金，而绝缘材料可以是例如SiO2。涡流以及磁线圈与永磁层结构的容性耦合也可用以下方法来抵消，即：将永磁层结构配置成小磁条与非磁性小条交替的形式，而不是一个磁性薄膜，这样就形成了有条纹图案的结构。
本发明还涉及用于磁光装置中的一种滑动触头。本发明的滑动触头包括有本发明的磁头。滑动触头最好具有如权利要求2所定义的特征。
此外，本发明还涉及一种其物镜配备有本发明的磁头的记录或重放的光学头。用来聚焦或跟踪的物镜可以用已知的驱动装置移动。
本发明还涉及具有本发明的磁头、或本发明的滑动触头、或本发明的光学头的磁光装置。
总之，本发明涉及一种信息读出方法，该信息存在于具有包括存储层和读出层的静磁耦合层或交换耦合层的磁光介质的磁道中。使用此方法时，激光束聚焦到读出层的一点上，并且加上外部磁场。本发明的方法的特点在于利用永久磁铁在介质中、特别是在读出层中产生磁道方向的磁场分量。本发明的方法是基于前述的同样概念。最好，使用本发明的磁头、或本发明的滑动触头、或本发明的光学头来实现此方法。
关于权利要求，应当指出：权利要求中定义的各种特征可以以组合的形式出现。本发明的上述和其他方面通过并非限定性的实例、参考以下说明的实施例，就可一目了然。
附图说明
附图中：
图1示出根据本发明的用于磁光装置中的磁头原理的平面图；
图2示出在根据本发明的磁头实施例中在图1所示的以X-X表示的截面中的磁力线图；
图3-7示出根据本发明的磁头或滑动触头的数个实施例的与图1的X-X截面相似的截面图；
图7A示出图7中在VIIA-VIIA线上截取的截面图；
图7B示出图7中以箭头VIIB代表的平面图；
图8示出根据本发明的磁头的一种应用；以及
图9示出根据本发明的光学头的截面图。
具体实施方式
图1所示的元件用于磁光装置中，特别适用于可进行MAMMOS读出的装置。该元件由本发明的磁头构成。该元件包括至少大体上是扁平的磁线圈1，它具有至少一层线圈层结构，此结构含有导电绕组。在此实例中，线圈1有两个线圈层结构3a和3b，每个分别含有导电绕组5a和5b。每个绕组5a和5b具有连接表面6a和6b，绕组由一个互连件进行电互连。绕组材料可以是金属，像Cu或Au。该元件还包括永磁层结构7，它大体上与线圈层结构3a和3b平行延伸并具有平面内磁轴m。磁线圈1具有中心区10，导电绕组5a和5b围绕中心区10延伸。中心区10可以是透明的。永磁层结构7具有两个扁平的永久磁铁9a和9b，它们位于磁线圈1的中心区10的从平行于线圈层结构3a和3b延伸的平面上看的相对两侧。两个永久磁铁9a和9b具有相同的磁化方向M，在磁线圈1的中心区10产生平面内磁场。永久磁铁可以用例如CoPt合金构成。MAMMOS读出时所需的磁力线倾角可以用优化磁铁9a和9b的位置，和/或尺寸，和/或成分等方法(例如改变磁铁间的距离，改变它们的厚度，改变永磁材料)来获得。
图2示出使用时典型配置的截面上的磁力线并且示出在磁线圈的中心区可以得到大约45度的磁场倾斜。在此配置中使用的线圈101是所谓的双层磁线圈，即有两个线圈层结构103a和103b，它们分别各含有导电绕组105a和105b。线圈101具有线圈轴101a。除了线圈101外，此配置还包括永磁层107，它包括两个扁平的永久磁铁109a和109b，它们位于中心区(此处以110表示)的相对两侧，永久磁铁具有相同的磁化发方向M。在此实例中，永磁层107的厚度为3μm，由CoPt合金构成。两个永久磁铁109a和109b之间的距离约为90μm。在中心区可以得到至少15kA/m大小的磁场，这样的磁场已证明足以进行MAMMOS读出。
图3A所示的实施例是本发明的滑动触头，但也可以是本发明的磁头，它包括含有导电绕组205的线圈层结构203，还包括永磁层结构207，后者包括两个扁平的永久磁铁209a和209b，它们位于中心区210的相对两侧。该实施例具有滑动触头体218，其正面220(在本文中也称为磁头面)在使用时与磁光存储介质的主表面相对。在此实例中，永磁层结构207位于面向磁头面220的线圈层结构203一例。换句话说，永磁层结构在线圈层结构和磁头面之间延伸。很明显，在此实施例中，滑动触头或磁头构成一个整体单元或部件。图3B所示的实施例包括永磁层结构207，它在线圈层结构203远离磁头面220的一侧与线圈层结构203平行延伸。图3C所示的实施例中永磁层结构207位于线圈层结构203的中心区210。
图4所示的实施例包括线圈层结构303，永磁层结构307，以及软磁层结构330，后者包括两个软磁层部分331a和331b，以便有可能建立透明的中心区310。在记录和/或读出过程中如果激光束要穿过磁线圈就需要这样做。所有这些层结构都相互平行，线圈层结构303在层结构307和330之间延伸，软磁层结构330位于线圈层结构303远离磁头面320的一侧。软磁层结构可以由例如NiFe合金构成。
图5所示的实施例具有磁头面420并包括线圈层结构403和永磁层结构407，二者均处于与磁头面420平行延伸的同一平面内。永磁层结构407至少有一对磁铁409a和409b，结构407在磁铁409a和409b之间延伸。
图6所示的实施例类似于图5所示的实施例，但又另加了一层与磁头面520平行延伸的软磁层结构530，它以这样的方式设置、即、线圈层结构503和永磁层结构507在软磁层结构530(一侧)和磁头面520(另一侧)之间延伸。
图7，7A和7B所示的实施例包括线圈层结构603和永磁层结构607，二者相互平行延伸。为了避免永磁层结构607中的涡流，永磁层做成这样形式的层叠结构，即永磁材料(例如CoPt合金)的子层640与非导电材料(例如石英)的中间层642交替叠放。
图8所示的本发明的磁光装置的实施例具有框架751，它为磁光(MO)盘755旋转地支持着轴753，并具有固定于框架上的滑动驱动器的两个磁轭757。滑动驱动器还包括与磁轭配合动作的两个驱动线圈759a。驱动线圈759a构成能相对轴753作径向平移运动的滑动装置759的一部分。滑动装置759具有弹簧悬挂件761，它承载着根据本发明的滑动触头实施例763，例如图3所示的滑动触头。图8所示的装置可以用来实施本发明的读出方法。按此方法，在具有静磁耦合层的磁光存储介质的磁道中的信息可以用激光点和外加磁场读出，永久磁铁、特别是由所述永磁层结构形成的永久磁铁用于在存储介质中产生磁道方向的磁场分量。这样，利用平面磁场调制线圈结合上述结构的永磁层，就可进行高分辨率和低误码率的MAMMOS读出。
图9所示的光记录和/或重放磁头可以是磁光装置的一部分，其物镜部分有物镜802a和前透镜802b。物镜802a和802b固定在框架804中，框架804具有支架806，支撑聚焦和/或跟踪驱动器的驱动器元件。物镜、特别是其前透镜802b配备有根据本发明的磁头实施例808，例如图7所示的磁头。利用所述驱动器，带有磁头808的前透镜802b就能够相对MO盘810作聚焦运动F和/或跟踪运动T。
应当指出：本发明不限于在此示出的实例。因此，磁线圈可以有多于一个或两个的线圈层，或线圈层结构。而且，也可使用固定在或安装在滑动触头上的本发明的磁头，而不是集成在滑动触头内的磁头。此外，MO装置可以配备摇臂，而不是或另加滑动装置。
还应当指出：本专利文件所说明的措施可以和欧洲专利申请00201412.4(PHNL000221EPP；已作为参考包括在本文内)所说明的措施有利结合。这就意味着扁平磁线圈可以有平行的线圈层，每一线圈层都有一匝围绕线圈的中心区。至少有一层线圈层有一些匝，其较靠近中心区的匝宽小于远离中心区的匝宽，而至少有一层线圈层的最外匝比其它一个线圈层的最外匝更靠近中心区。这种线圈结构具有有限的电容，而功率消耗也有限。

Claims (15)

1.一种磁头、特别是用于磁光装置的磁头，该磁头包括扁平的磁线圈，所述磁线圈具有包括电导绕组的至少一个线圈层结构，所述磁头还包括与所述线圈层结构平行延伸并且具有平面内磁轴的永磁层结构。
2.如权利要求1所述的磁头，其特征在于：所述磁线圈具有中心区，所述导电绕组围绕所述中心区延伸，其中，所述永磁层结构包括两个扁平的永久磁铁，它们位于所述磁线圈的所述中心区的相对两侧。
3.如权利要求1所述的磁头，其特征在于：所述磁线圈具有中心区，所述导电绕组围绕所述中心区延伸，其中，所述永磁层结构包括位于所述中心区的永久磁铁。
4.如权利要求1所述的磁头，其特征在于：所述磁头具有至少部分地与所述线圈层结构平行延伸的磁头面，其中，所述永磁层结构位于所述线圈层结构的远离所述磁头面的一侧。
5.如权利要求1所述的磁头，其特征在于：所述磁头具有至少部分地与所述线圈层结构平行延伸的磁头面，其中，所述永磁层结构位于所述线圈层结构的靠近所述磁头面的一侧。
6.如权利要求1所述的磁头，其特征在于：所述磁头具有至少部分地与所述线圈层结构平行延伸的磁头面，其中，所述永磁层结构和所述线圈层结构处于同一平面，所述线圈层结构在所述永磁层结构的两个永久磁铁之间延伸。
7.如权利要求1所述的磁头，其特征在于包括与所述线圈层结构平行延伸的软磁层结构。
8.如权利要求7所述的磁头，其特征在于：所述线圈层结构在所述永磁层结构和所述软磁层结构之间延伸。
9.如权利要求8所述的磁头，其特征在于：所述磁头具有至少部分地与所述线圈层结构平行延伸的磁头面，其中，所述软磁层结构位于所述线圈层结构的远离所述磁头面的一侧。
10.如权利要求1所述的磁头，其特征在于：所述永磁层结构是具有至少一层非导电中间层的叠层结构。
11.一种用于磁光装置并具有如上述权利要求中任何一个所述的磁头的滑动触头。
12.如权利要求11所述的滑动触头，其特征在于：所述滑动触头体与所述磁头集成为一体。
13.一种记录和/或重放光学头，其物镜配备有如权利要求1-10中任一项所述的磁头。
14.一种磁光装置，它包括如权利要求1-10中任一项所述的磁头、或者包括如权利要求11或12所述的滑动磁头、或者包括如权利要求13所述的光学头。
15.一种利用激光点和外加磁场读出存在于具有静磁耦合或交换耦合层的磁光存储介质的磁道中的信息的方法，该方法包括：
利用永久磁铁在所述介质中产生磁道方向的磁场分量；
利用激光点和外加磁场读出所述信息；
所述方法的特征在于，所述磁场分量是用权利要求1所述磁头的永磁层产生的。
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